IRF HFA25TB60

PD -2.339
HFA25TB60
HEXFRED
Ultrafast, Soft Recovery Diode
TM
Features
•
•
•
•
•
•
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
Very Low Qrr
Guaranteed Avalanche
Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
VR = 600V
VF (typ.)* = 1.3V
IF(AV) = 25A
Qrr (typ.)= 112nC
IRRM = 10A
trr(typ.) = 23ns
di(rec)M/dt (typ.) = 250A/µs
Description
International Rectifier's HFA25TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 25 amps continuous current, the HFA25TB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (IRRM) and does not exhibit any
tendency to "snap-off" during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA25TB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed.
TO-220AC
Absolute Maximum Ratings
Parameter
VR
IF @ T C = 25°C
IF @ T C = 100°C
IFSM
IFRM
IAR
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Repetitive Avalanche Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
Units
600
V
25
225
100
2.0
125
50
-55 to +150
A
W
C
* 125°C
4/2/97
HFA25TB60
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
VBR
Cathode Anode Breakdown Voltage
VFM
Max Forward Voltage
I RM
Max Reverse Leakage Current
CT
LS
Min. Typ. Max. Units
Junction Capacitance
600
–––
–––
–––
–––
–––
–––
––– –––
1.3
1.7
1.5
2.0
1.3
1.7
1.5
20
600 2000
55 100
Series Inductance
–––
8.0
–––
V
V
µA
pF
nH
Test Conditions
IR = 100µA
IF = 25A
See Fig. 1
IF = 50A
IF = 25A, T J = 125°C
See Fig. 2
VR = VR Rated
TJ = 125°C, VR = 0.8 x VR RatedD Rated
See Fig. 3
VR = 200V
Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M/dt1
di(rec)M/dt2
Reverse Recovery Time
See Fig. 5, 6 & 16
Peak Recovery Current
See Fig. 7& 8
Reverse Recovery Charge
See Fig. 9 & 10
Peak Rate of Fall of Recovery Current
During tb
See Fig. 11 & 12
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
23 –––
50
75
ns
105 160
4.5
10
A
8.0
15
112 375
nC
420 1200
250 –––
A/µs
160 –––
Test Conditions
IF = 1.0A, dif /dt = 200A/µs, VR = 30V
TJ = 25°C
TJ = 125°C
I F = 25A
TJ = 25°C
TJ = 125°C
V R = 200V
TJ = 25°C
TJ = 125°C
dif/dt = 200A/µs
TJ = 25°C
TJ = 125°C
Thermal - Mechanical Characteristics
Parameter
Tlead‚
RθJC
RθJAƒ
RθCS„
Lead Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
Wt
Weight
Mounting Torque
 L=100µH, duty cycle limited by max TJ
‚ 0.063 in. from Case (1.6mm) for 10 sec
ƒ Typical Socket Mount
„ Mounting Surface, Flat, Smooth and Greased
Min.
Typ.
Max.
Units
––––
––––
––––
––––
––––
––––
6.0
5.0
––––
––––
––––
0.5
2.0
0.07
––––
––––
300
1.0
80
––––
––––
––––
12
10
°C
K/W
g
(oz)
Kg-cm
lbf•in
HFA25TB60
Reverse Current - IR (µA)
10000
TJ = 150°C
T = 125°C
J
T = 25°C
TJ = 150°C
1000
TJ= 125°C
100
10
1
TJ = 25°C
0.1
A
0.01
J
0
10
100
200
300
400
500
600
Reverse Voltage - V R (V)
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
A
1
0.6
1.0
1.4
1.8
2.2
2.6
Forward Voltage Drop - V FM (V)
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
Junction Capacitance -CT (pF)
1000
A
TJ = 25°C
100
A
10
1
10
100
1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
Thermal Response (Z thJC)
Instantaneous Forward Current - I F (A)
100
1
D = 0.50
0.20
0.1
0.01
0.00001
PDM
0.10
t1
0.05
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
1
HFA25TB60
140
30
VR = 200V
TJ = 125°C
TJ = 25°C
120
25
100
20
80
Irr- ( A)
trr- (nC)
VR = 200V
TJ = 125°C
TJ = 25°C
I F = 50A
I F = 50A
I F = 25A
I F = 10A
15
I F = 25A
I F = 10A
60
10
40
5
A
20
100
di f /dt - (A/µs)
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I F = 50A
di (rec) M/dt- (A /µs)
Qrr- (nC)
800
1000
10000
1400
1000
di f /dt - (A/µs)
Fig. 6 - Typical Recovery Current vs. dif/dt
Fig. 5 - Typical Reverse Recovery vs. dif/dt
1200
A
0
100
1000
I F = 25A
IF = 10A
600
1000
I F = 50A
I F = 25A
I F = 10A
400
200
A
0
100
di f /dt - (A/µs)
1000
Fig. 7 - Typical Stored Charge vs. di f/dt
100
100
A
di f /dt - (A/µs)
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
1000
HFA25TB60
3
t rr
IF
tb
ta
0
REVERSE RECOVERY CIRCUIT
VR = 200V
Q rr
2
I RRM
4
0.5 I RRM
di(rec)M/dt
5
0.01 Ω
0.75 I RRM
L = 70µH
1
D.U.T.
dif/dt
ADJUST G
D
IRFP250
4. Qrr - Area under curve defined by trr
and I RRM
t rr X IRRM
Qrr =
2
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
5. di(rec)M/dt - Peak rate of change of
from zero crossing point of negative
current during tb portion of trr
going IF to point where a line passing
through 0.75 IRRM and 0.50 I RRM
extrapolated to zero current
S
Fig. 9 - Reverse Recovery Parameter Test
Circuit
L = 100µH
Fig. 10 - Reverse Recovery Waveform and
Definitions
I L(PK)
HIGH-SPEED
SWITCH
DUT
Rg = 25 ohm
CURRENT
MONITOR
di f /dt
1. dif/dt - Rate of change of current
through zero crossing
FREE-WHEEL
DIODE
+
DECAY
TIME
Vd = 50V
V (AVAL)
V R(RATED)
Fig. 11 - Avalanche Test Circuit and Waveforms
HFA25TB60
Conforms to JEDEC Outline TO-220AC
Dimensions in millimeters and inches
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
4/97