Transistor Small switching (30V, 0.1A) 2SK3019 Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. External dimensions (Units: mm) Applications Interfacing, switching (30V, 100mA) Structure Silicon N-channel MOSFET Absolute maximum ratings (Ta = 25C) 174 Equivalent circuit Transistor 2SK3019 Electrical characteristics (Ta = 25C) Packaging specifications Electrical characteristic curves Fig.1 Typical output characteristics Fig.2 Typical transfer characteristics Fig.3 Gate threshold voltage vs. channel temperature 175 Transistor 2SK3019 Fig.6 Static drain-source on-state resistance vs. gate-source voltage Fig.7 Static drain-source on-state resistance vs. channel temperature Fig.8 Forward transfer admittance vs. drain current Fig.11 176 Typical capacitance vs. drain-source voltage Fig.12 Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms) Transistor 2SK3019 Switching characteristics measurement circuit 177