2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET EMT3 0.7 1.6 0.55 0.3 (1) 0.2 0.2 0.5 0.5 0.15 0.1Min. 0.8 (2) 1.6 (3) zApplications Interfacing, switching (30V, 100mA) 1.0 (1)Source zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. (2)Gate (3)Drain Abbreviated symbol : KN zPackaging specifications Package Type zEquivalent circuit Taping Drain TL Code Basic ordering unit (pieces) 3000 2SK3019 Gate zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V ID ±100 mA IDP∗ ±400 mA Total power dissipation PD∗2 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C Parameter Continuous Drain current Pulsed 1 ∗ Gate Protection Diode Source ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltages are exceeded. ∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands. zThermal resistance Parameter Channel to ambient Symbol Limits Unit Rth(ch-a) ∗ 833 °C / W ∗ With each pin mounted on the recommended lands. Rev.C 1/3 2SK3019 Transistor zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit IGSS − − ±1 µA VGS=±20V, VDS=0V V(BR)DSS 30 − − V ID=10µA, VGS=0V Gate-source leakage Drain-source breakdown voltage Conditions IDSS − − 1.0 µA VDS=30V, VGS=0V Gate threshold voltage VGS(th) 0.8 − 1.5 V VDS=3V, ID=100µA Static drain-source on-state resistance RDS(on) − 5 8 Ω ID=10mA, VGS=4V RDS(on) − 7 13 Ω ID=1mA, VGS=2.5V Forward transfer admittance |Yfs| 20 − − ms ID=10mA, VDS=3V Input capacitance Ciss − 13 − pF VDS=5V Output capacitance Coss − 9 − pF VGS=0V Reverse transfer capacitance Crss − 4 − pF f=1MHz Turn-on delay time td(on) − 15 − ns ID=10mA, VDD tr − 35 − ns VGS=5V td(off) − 80 − ns RL=500Ω tf − 80 − ns RG=10Ω Zero gate voltage drain current Rise time Turn-off delay time Fall time 5V 0.15 200m 3V 3.5V 0.1 2.5V 0.05 2V 2 20m 10m 5m 2m Ta=125°C 75°C 25°C −25°C 1m 0.5m 3 4 0.1m 0 5 DRAIN-SOURCE VOLTAGE : VDS (V) 10 50 VGS=4V Pulsed Ta=125°C 75°C 25°C −25°C 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 4 1.5 1 0.5 0 −50 −25 0.5 DRAIN CURRENT : ID (A) Fig.4 Static drain-source on-state resistance vs. drain current (Ι) 20 5 2 1 0.005 0.01 0.02 0.05 0.1 0.2 25 50 75 100 15 10 0.5 0.001 0.002 0 125 150 Fig.3 Gate threshold voltage vs. channel temperature VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C VDS=3V ID=0.1mA Pulsed CHANNEL TEMPERATURE : Tch (°C) Fig.2 Typical transfer characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 20 3 2 2 GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Typical output characteristics 50 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 1 50m 0.2m VGS=1.5V 0 0 VDS=3V Pulsed 100m Ta=25°C Pulsed DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 4V GATE THRESHOLD VOLTAGE : VGS(th) (V) zElectrical characteristic curves 0.5 DRAIN CURRENT : ID (A) Fig.5 Static drain-source on-state resistance vs. drain current (ΙΙ) Ta=25°C Pulsed 10 5 ID=0.1A ID=0.05A 0 0 5 10 15 20 GATE-SOURCE VOLTAGE : VGS (V) Fig.6 Static drain-source on-state resistance vs. gate-source voltage Rev.C 2/3 2SK3019 Transistor 0.5 VDS=3V Pulsed 0.2 7 ID=100mA 6 ID=50mA 5 4 3 2 Ta=−25°C 25°C 75°C 125°C 0.1 0.05 0.02 0.01 0.005 0.002 1 0 25 50 75 100 125 0.001 0.0001 0.0002 150 0.05 0.1 0.2 50 Ta=25°C Pulsed 50m 20m Ta=125°C 75°C 25°C −25°C 10m 5m 2m 1m 0.5m 0.2m 0.1m 0.5 0 20m 0V 5m 2m 1m 0.5m Ciss 10 5 Coss Crss 2 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.9 Reverse drain current vs. source-drain voltage (Ι) 1000 Ta=25°C f=1MHZ VGS=0V 20 50m VGS=4V VGS=0V Pulsed 100m Fig.8 Forward transfer admittance vs. drain current CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) Fig.7 Static drain-source on-state resistance vs. channel temperature 100m 0.005 0.01 0.02 200m DRAIN CURRENT : ID (A) CHANNEL TEMPERATURE : Tch (°C) 200m 0.0005 0.001 0.002 1 Ta=25°C VDD=5V VGS=5V RG=10Ω Pulsed tf 500 SWITHING TIME : t (ns) 0 −50 −25 10m REVERSE DRAIN CURRENT : IDR (A) VGS=4V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| (S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 9 8 td(off) 200 100 50 20 tr td(on) 10 5 0.2m 0.1m 0 0.5 1 1.5 0.5 0.1 0.2 0.5 1 2 5 10 20 50 2 0.1 0.2 0.5 DRAIN-SOURCE VOLTAGE : VDS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.11 Typical capacitance vs. drain-source voltage Fig.10 Reverse drain current vs. source-drain voltage (ΙΙ) 1 2 5 10 20 50 100 DRAIN CURRENT : ID (mA) Fig.12 Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms) zSwitching characteristics measurement circuit Pulse width VGS RG ID D.U.T. VDS VGS 90% 50% 10% RL 50% 10% VDS 10% VDD 90% 90% td (on) ton Fig.13 Switching time measurement circuit tr td (off) tf toff Fig.14 Switching time waveforms Rev.C 3/3 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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