HN1A02F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A02F Unit: mm Audio Frequency Power Amplifier Applications Switching applications z High hFE : hFE(1) = 120~400 z Low VCE(sat.) : VCE (sat) = −0.2 V (max.) (IC = −400 mA, IB = −8 mA) z Small Power Motor Driver Application. Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage VCEO −15 V Emitter-base voltage VEBO −5 V Collector current IC −800 mA Base current IB −160 mA PC* 300 mW Tj 150 °C Tstg −55~150 °C Collector power dissipation Junction temperature Storage temperature range 1.EMITTER1 2.BASE1 3.COLLECTOR2 4.EMITTER2 5.BASE2 6.COLLECTOR1 (E1) (B1) (C2) (E2) (B2) (C1) JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high EIAJ ― temperature/current/voltage and the significant change in TOSHIBA 2-3N1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating Weight: 0.015mg(typ) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating. Power dissipation per element should not exceed 200mW. Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) Symbol Test Circuit Collector cut-off current ICBO ― VCB = −15V, IE = 0 ― ― −100 nA Emitter cut-off current IEBO ― VEB = −5V, IC = 0 ― ― −100 nA IC = −10mA,IB= 0 −15 ― ― V VCE = −1V, IC = −100mA 120 ― 400 VCE = −1V, IC = −800mA 40 ― ― IC = −400mA, IB = −8mA ― ― −0.2 V VCE = −5V, IC = −10mA −0.5 ― −0.8 V Characteristic Collector-Emitter Brakedown Voltage DC current gain Collector-emitter saturation voltage Base-Emitter voltage Transition frequency Collector output capacitance Note: Marking V(BR)CEO hFE(1) (Note) ― hFE(2) VCE (sat) ― VBE Test Condition Min Typ. Max Unit fT ― VCE = −5V, IC = −10mA ― 120 ― MHz Cob ― VCB = −10V, IE = 0, f = 1MHz ― 13 ― pF hFE Classification Y (Y): 120~240, GR (G): 200~400 ( ) Marking Symbol Equivalent Circuit (Top View) 26 1 2007-11-22 HN1A02F (Q1,Q2 Common) IC – VCE hFE – IC Emitter common Ta = 25°C −6 Emitter common −5 hFE −800 2000 −4 CURRENT GAIN E COLLECTOR CURRENT IC (mA) −1000 −3 −600 −2 −400 IB = −1 mA −200 0 0 0 −2 −4 1000 VCE = −1 V Ta = 100°C 500 300 25 −25 100 50 30 10 −1 −6 −8 −10 COLLECTOR-EMITTER VOLTAGE (V) −12 −3 −10 −30 −100 COLLECTOR CURRENT IC VCE −300 −1000 (mA) (mA) −2 Emitter common −1 IC/IB = 50 COLLECTOR CURRENT IC COLLECTOR-EMITTERSATURATION VOTAGE VCE (sat) (V) IC – VBE −800 VCE (sat) – IC −0.5 −0.3 −0.1 Ta = 100°C −0.05 −0.03 25 −25 −0.01 −1 −3 −10 −30 −100 COLLECTOR CURRENT IC −300 −1000 Emitter common VCE = −1 V −600 Ta = 100°C −25 −200 0 0 (mA) 25 −400 −0.2 −0.4 −0.6 −0.8 BASE-EMITTER VOLTAGE VBE −1.0 (V) COLLECTOR POWER DISSPATION PC (mW) PC* – Ta 500 400 300 200 100 0 0 25 50 75 100 125 ANBIENT TEMPERATURE Ta 150 175 (°C) *Total Rating. 2 2007-11-22 HN1A02F RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 2007-11-22