HN1A26FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A26FS Frequency General-Purpose Amplifier Applications Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. • High voltage: VCEO = −50 V • High current: IC = −100 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity Unit: mm 1.0±0.05 0.8±0.05 Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA Base current IB −30 mW PC(Note 1) 50 mW Tj 150 °C Tstg −55 ~ 150 °C Collector power dissipation Junction temperature Storage temperature range 6 2 5 3 4 0.1±0.05 Symbol 1 0.48 Characteristic 0.1±0.05 +0.02 -0.04 Absolute Maximum Ratings (Ta = 25°C) 0.35 0.35 1.0±0.05 : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) 0.7±0.05 0.1±0.05 1.EMITTER1 2.BASE1 3.COLLECTOR2 4.EMITTER2 5.BASE2 6.COLLECTOR1 fS6 0.15±0.05 • JEDEC (E1) (B1) (C2) (E2) (B2) (C1) ― JEITA ― Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-1F1D temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.001g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating. Note: Electrical Characteristics (Ta = 25°C) Characteristic Symbol Collector cutoff current Emitter cutoff current Test Condition ICBO VCB = −50 V, IE = 0 IEBO VEB = −5 V, IC = 0 5 μA IC = −100 mA, IB = −10 mA ― −0.18 −0.3 V VCE = −10 V, IC = −1 mA 80 ⎯ ⎯ MHz VCB = −10 V, IE = 0, f = 1 MHz ⎯ 1.6 ⎯ pF Marking 4 Type Name hFE Rank Q2 2 μA 400 8F Q1 1 −0.1 Y (F): 120 ~ 140, GR (H): 200 ~ 400 Equivalent Circuit (top view) 6 ⎯ −0.1 VCE (sat) Note: hFE Classification ( ) Marking symbol ⎯ ⎯ Collector-emitter saturation voltage fT Unit ⎯ VCE = −6 V, IC = −2 mA Cob Max ⎯ hFE(Note) Collector output capacitance Typ. 120 DC current gain Transition frequency Min 3 1 2007-11-01 HN1A26FS Q1, Q2 Common hFE - IC IC - VCE 1000 -120 COLLECTOR CURRENT IC (mA) -100 -1.5 DC CURRENT GAIN hFE COMMON EMITTER Ta = 25°C -2.0 -1.0 -80 -0.7 -60 -0.5 -40 -0.3 -0.2 Ta = 100°C 100 -25 COMMON EMITTER VCE = −6V VCE = −1V -20 IB = -0.1mA -00 -00 -1 -2 -3 -4 -5 -6 10 -0.1 -7 -1 COLLECTOR-EMITTER VOLTAGE VCE (V) VCE(sat) - IC VBE(sat) - IC COMMON EMITTER IC/IB = 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -100 -10 -0.1 Ta = 100°C 25 -25 -0.01 -0.1 -1 -10 COMMON EMITTER IC/IB = 10 -25 -1 25 -0.1 -0.1 -100 IB - VBE COLLECTOR POWER DISSIPATION PC (mV) -25 25 -1 COMMON EMITTER VCE = −6V -0.1 -0.2 -0.4 -0.6 -0.8 -100 PC - Ta -100 -10 -10 COLLECTOR CURRENT IC (mA) -1000 Ta = 100°C Ta = 100°C -1 COLLECTOR CURRENT IC (mA) BASE CURRENT IB (uA) -10 COLLECTOR CURRENT IC (mA) -1 -00 25 -1 -1.2 -1.4 100 Mounted on FR4 board (10 mm × 10 mm × 1 mmt) 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 180 AMBIENT TEMPERATURE Ta (°C) BASE-EMITTER VOLTAGE VBE (V) 2 2007-11-01 HN1A26FS RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 2007-11-01