TOSHIBA HN1A26FS

HN1A26FS
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process)
HN1A26FS
Frequency General-Purpose Amplifier Applications
Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
•
High voltage: VCEO = −50 V
•
High current: IC = −100 mA (max)
•
High hFE: hFE = 120 to 400
•
Excellent hFE linearity
Unit: mm
1.0±0.05
0.8±0.05
Rating
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−100
mA
Base current
IB
−30
mW
PC(Note 1)
50
mW
Tj
150
°C
Tstg
−55 ~ 150
°C
Collector power dissipation
Junction temperature
Storage temperature range
6
2
5
3
4
0.1±0.05
Symbol
1
0.48
Characteristic
0.1±0.05
+0.02
-0.04
Absolute Maximum Ratings (Ta = 25°C)
0.35 0.35
1.0±0.05
: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
0.7±0.05
0.1±0.05
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
fS6
0.15±0.05
•
JEDEC
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
―
JEITA
―
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-1F1D
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.001g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating.
Note:
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Collector cutoff current
Emitter cutoff current
Test Condition
ICBO
VCB = −50 V, IE = 0
IEBO
VEB = −5 V, IC = 0
5
μA
IC = −100 mA, IB = −10 mA
―
−0.18
−0.3
V
VCE = −10 V, IC = −1 mA
80
⎯
⎯
MHz
VCB = −10 V, IE = 0, f = 1 MHz
⎯
1.6
⎯
pF
Marking
4
Type Name
hFE Rank
Q2
2
μA
400
8F
Q1
1
−0.1
Y (F): 120 ~ 140, GR (H): 200 ~ 400
Equivalent Circuit (top view)
6
⎯
−0.1
VCE (sat)
Note: hFE Classification
( ) Marking symbol
⎯
⎯
Collector-emitter saturation voltage
fT
Unit
⎯
VCE = −6 V, IC = −2 mA
Cob
Max
⎯
hFE(Note)
Collector output capacitance
Typ.
120
DC current gain
Transition frequency
Min
3
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HN1A26FS
Q1, Q2 Common
hFE - IC
IC - VCE
1000
-120
COLLECTOR CURRENT IC (mA)
-100
-1.5
DC CURRENT GAIN hFE
COMMON EMITTER Ta = 25°C
-2.0
-1.0
-80
-0.7
-60
-0.5
-40
-0.3
-0.2
Ta = 100°C
100
-25
COMMON EMITTER
VCE = −6V
VCE = −1V
-20
IB = -0.1mA
-00
-00
-1
-2
-3
-4
-5
-6
10
-0.1
-7
-1
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
VBE(sat) - IC
COMMON EMITTER
IC/IB = 10
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
-100
-10
-0.1
Ta = 100°C
25
-25
-0.01
-0.1
-1
-10
COMMON EMITTER
IC/IB = 10
-25
-1
25
-0.1
-0.1
-100
IB - VBE
COLLECTOR POWER DISSIPATION PC (mV)
-25
25
-1
COMMON EMITTER
VCE = −6V
-0.1
-0.2
-0.4
-0.6
-0.8
-100
PC - Ta
-100
-10
-10
COLLECTOR CURRENT IC (mA)
-1000
Ta = 100°C
Ta = 100°C
-1
COLLECTOR CURRENT IC (mA)
BASE CURRENT IB (uA)
-10
COLLECTOR CURRENT IC (mA)
-1
-00
25
-1
-1.2
-1.4
100
Mounted on FR4 board
(10 mm × 10 mm × 1 mmt)
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100 120 140 160 180
AMBIENT TEMPERATURE Ta (°C)
BASE-EMITTER VOLTAGE VBE (V)
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HN1A26FS
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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