6F(R) Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 6 A FEATURES • High surge current capability RoHS • Avalanche types available COMPLIANT • Stud cathode and stud anode version • Wide current range • Types up to 1200 V VRRM • RoHS compliant TYPICAL APPLICATIONS DO-203AA (DO-4) • Converters • Power supplies PRODUCT SUMMARY IF(AV) • Machine tool controls 6A • Battery charges MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) TC IF(RMS) IFSM I2 t VRRM VALUES UNITS 6 A 160 °C 9.5 A 50 Hz 159 60 Hz 167 A 50 Hz 134 60 Hz 141 Range 100 to 1200 V - 65 to 175 °C TJ A2 s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VR(BR), MINIMUM AVALANCHE VOLTAGE V (1) 10 100 150 - 20 200 275 - 40 400 500 500 60 600 725 750 6F(R) 80 800 950 950 100 1000 1200 1150 120 1200 1400 1350 IRRM MAXIMUM AT TJ = 175 °C mA 12 Note (1) Avalanche version only available from V RRM 400 V to 1200 V Document Number: 93519 Revision: 29-Sep-08 For technical questions, contact: [email protected] www.vishay.com 1 6F(R) Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 6 A FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature IF(AV) Maximum RMS forward current TEST CONDITIONS 180° conduction, half sine wave IF(RMS) Maximum non-repetitive peak reverse power PR (1) 10 µs square pulse, TJ = TJ maximum t = 10 ms Maximum peak, one cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t I2√t for fusing No voltage reapplied UNITS 6 A 160 °C 9.5 A 4 K/W 159 No voltage reapplied 100 % VRRM reapplied VALUES 167 Sinusoidal half wave, initial TJ = TJ maximum 141 127 116 82 t = 0.1 to 10 ms, no voltage reapplied 1270 VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.63 High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 0.86 Low level value of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 15.7 High level value of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 5.6 Ipk = 19 A, TJ = 25 °C, tp = 400 µs rectangular wave 1.10 VFM A2s 90 100 % VRRM reapplied Low level value of threshold voltage Maximum forward voltage drop A 134 A2√s V mΩ V Note (1) Available only for avalanche version, all other parameters the same as 6F THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum junction temperature range TJ - 65 to 175 Maximum storage temperature range TStg - 65 to 200 Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, case to heatsink RthCS Mounting torque, ± 10 % °C DC operation www.vishay.com 2 2.5 K/W Mounting surface, smooth, flat and greased Lubricated threads (Not lubricated threads) Approximate weight Case style UNITS 0.5 1.2 (1.5) N·m (lbf · in) 7 g 0.25 See dimensions - link at the end of datasheet For technical questions, contact: [email protected] oz. DO-203AA (DO-4) Document Number: 93519 Revision: 29-Sep-08 6F(R) Series Standard Recovery Diodes Vishay High Power Products (Stud Version), 6 A ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.34 0.29 120° 0.44 0.48 90° 0.57 0.63 60° 0.85 0.88 30° 1.37 1.39 TEST CONDITIONS UNITS TJ = TJ maximum K/W 175 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 6F(R) Series RthJC (DC) = 2.5 K/W 170 Conduction Angle 165 160 90° 60° 30° 120° 180° 155 0 1 2 3 4 5 6 175 6F(R) Series RthJC (DC) = 2.5 K/W 170 Conduction Period 165 160 60° 90° 120° 30° 180° DC 155 7 0 2 4 6 8 10 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Average Forward Power Loss (W) Average Forward Current (A) 6 R 180° 120° 90° 60° 30° 5 4 30 K/W 15 20 K/ W 40 K /W K/ W -D elt a R 50 K /W RMS Limit 3 th SA = 2 Conduction Angle 1 6F(R) Series TJ = 175°C 0 0 1 2 3 4 5 Average Forward Current (A) 0 6 25 50 75 100 Maximum Allowable Ambient Temperature (°C) Fig. 3 - Forward Power Loss Characteristics Document Number: 93519 Revision: 29-Sep-08 For technical questions, contact: [email protected] www.vishay.com 3 6F(R) Series Vishay High Power Products Standard Recovery Diodes Maximum Average Forward Power Loss (W) (Stud Version), 6 A 8 R DC 180° 120° 90° 60° 30° 7 6 5 th SA = 20 K/ W 10 15 K/ W 30 K/W -D el ta K/ W R 40 K /W 4 3 RMS Limit 50 K /W Conduction Period 2 6F(R) Series TJ = 175°C 1 0 0 2 4 6 8 Average Forward Current (A) 10 0 25 50 75 100 Maximum Allowable Ambient Temperature (°C) 150 1000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ= 175°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 140 130 120 Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 110 100 90 80 70 60 6F(R) Series 50 6F(R) Series 100 TJ = 25°C 10 TJ = 175°C 1 40 1 10 0 100 0.5 150 140 130 120 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 175°C No Voltage Reapplied Rated VRRM Reapplied 110 100 90 80 70 60 50 40 30 0.01 6F(R) Series 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 1.5 2 2.5 Fig. 7 - Forward Voltage Drop Characteristics Transient Thermal Impedance ZthJC (K/W) Peak Half Sine Wave Forward Current (A) Fig. 5 - Maximum Non-Repetitive Surge Current 160 1 Instantaneous Forward Voltage (V) Number Of Equal Amplitude Half Cycle Current Pulses (N) 10 Steady State Value RthJC = 2.5 K/W (DC Operation) 1 6F(R) Series 0.1 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics For technical questions, contact: [email protected] Document Number: 93519 Revision: 29-Sep-08 6F(R) Series Standard Recovery Diodes Vishay High Power Products (Stud Version), 6 A ORDERING INFORMATION TABLE Device code 6 F R 120 M 1 2 3 4 5 1 - Current rating: Code = IF(AV) 2 - F = Standard device 3 - None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) 4 - Voltage code x 10 = VRRM (see Voltage Ratings table) 5 - None = Stud base DO-203AA (DO-4) 10-32UNF-2A M = Stud base DO-203AA (DO-4) M5 x 0.8 (not available for avalanche diode) LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93519 Revision: 29-Sep-08 http://www.vishay.com/doc?95311 For technical questions, contact: [email protected] www.vishay.com 5 Outline Dimensions Vishay Semiconductors DO-203AA (DO-4) DIMENSIONS in millimeters (inches) + 0.3 0 + 0.01 (0.08 0) 0.8 ± 0.1 (0.03 ± 0.004) 3.30 (0.13) 4.00 (0.16) 2 5.50 (0.22) MIN. R 0.40 R (0.02) Ø 1.80 ± 0.20 (Ø 0.07 ± 0.01) 20.30 (0.80) MAX. Ø 6.8 (0.27) 10.20 (0.40) MAX. 3.50 (0.14) 11.50 (0.45) 10.70 (0.42) 10/32" UNF-2A For metric devices: M5 x 0.8 11 (0.43) Document Number: 95311 Revision: 30-Jun-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000