2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications • High breakdown voltage: VCEO = −150 V • Low output capacitance: Cob = 5.0 pF (max) • High transition frequency: fT = 120 MHz (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage VCEO −150 V Emitter-base voltage VEBO −5 V Collector current IC −50 mA Base current IB 5 mA Collector power dissipation PC 800 mW Junction temperature Tj 150 °C Tstg −55 to 150 °C Storage temperature range JEDEC JEITA TO-92MOD ― Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-5J1A temperature/current/voltage and the significant change in Weight: 0.36 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA949 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −150 V, IE = 0 ― ― −0.1 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −0.1 μA VCE = −5 V, IC = −10 mA 70 ― 240 VCE (sat) IC = −10 mA, IB = −1 mA ― ― −0.8 V Base-emitter voltage VBE VCE = −5 V, IC = −30 mA ― ― −0.9 V Transition frequency fT VCE = −30 V, IC = −10 mA ― 120 ― MHz VCB = −10 V, IE = 0, f = 1 MHz ― 4.0 5.0 pF hFE DC current gain (Note) Collector-emitter saturation voltage Collector output capacitance Cob Note: hFE classification O: 70 to 140, Y: 120 to 240 Marking A949 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SA949 IC – VCE IC – VBE −60 −60 Common emitter Common emitter −600 −50 Ta = 25°C −400 −30 −300 Collector current IC −40 −200 −20 IB = −100 μA −10 0 0 −2 −4 −6 −8 Collector-emitter voltage −10 VCE = −5 V (mA) −500 (mA) Collector current IC −50 −40 Ta = 100°C −25 −30 −20 −10 0 0 −12 −0.2 VCE (V) −0.4 −0.6 Base-emitter voltage hFE – IC −0.8 −1.0 VBE (V) VCE (sat) – IC −5 (V) 1000 Common emitter 500 VCE = −5 V Collector-emitter saturation voltage VCE (sat) DC current gain hFE 25 300 Ta = 100°C 25 100 −25 50 30 10 −0.3 −0.5 −1 −3 −5 −10 Collector current IC −30 −50 −100 (mA) −3 Common emitter IC/IB = 10 −1 −0.5 −0.3 Ta = 100°C −25 −0.1 25 −0.05 −0.03 −0.01 −0.3 −0.5 −1 −3 −5 −10 Collector current IC −30 −50 −100 (mA) Safe Operating Area −300 100 ms* PC – Ta 1.2 0.5 s* IC max (continuous) (W) −50 IC max (pulsed)* −30 −10 −5 −3 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −1 −3 −5 −10 1.0 PC DC operation Ta = 25°C Collector power dissipation Collector current IC (mA) −100 VCEO max −30 −50 Collector-emitter voltage −100 0.8 0.6 0.4 0.2 0 0 −300 VCE (V) 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 3 2006-11-09 2SA949 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2006-11-09