2SC5949 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5949 Power Amplifier Applications Unit: mm • Complementary to 2SA2121 • Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 200 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.5 A Collector power dissipation PC 220 W Junction temperature Tj 150 °C Tstg −55 to 150 °C Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in JEITA ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-21F1A operating temperature/current/voltage, etc.) are within the Weight: 9.75 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-16 2SC5949 Electrical Characteristics (Tc = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit Collector cut-off current ICBO VCB = 200 V, IE = 0 ― ― 5.0 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 5.0 μA V (BR) CEO IC = 50 mA, IB = 0 200 ― ― V VCE = 5 V, IC = 1 A 55 ― 160 hFE (2) VCE = 5 V, IC = 8 A 35 60 ― VCE (sat) IC = 10 A, IB = 1 A ― 0.4 3.0 V Base-emitter voltage VBE VCE = 5 V, IC = 8 A ― 1.0 1.5 V Transition frequency fT VCE = 5 V, IC = 1 A ― 30 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 270 ― pF Collector-emitter breakdown voltage hFE (1) DC current gain (Note 1) Collector-emitter saturation voltage Collector output capacitance Cob Note 1: hFE(1) classification R: 55 to 110, O: 80 to 160 Marking Part No. (or abbreviation code) TOSHIBA 2SC5949 Lot No. JAPAN Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-16 2SC5949 IC – VCE Common emitter VCE = 5 V Common emitter Tc = 25°C 16 (A) 500 400 12 200 8 100 4 12 IC 300 Collector current (A) IC Collector current IC– VBE 16 20 50 8 Tc = 100°C 25 −25 4 IB = 20 mA 0 0 2 4 6 8 Collector-emitter voltage 10 VCE 0 0 12 (V) 0.5 1.0 DC current gain 100 25 50 −25 10 5 0.03 0.1 0.3 1 Collector current 3 IC 10 30 Common emitter IC / IB = 10 V 0.3 Tc = 100°C 25 0.1 −25 0.05 0.03 0.01 0.03 (A) 0.3 0.1 fT– IC 3 10 IC 30 (A) Safe operating area 100 1 ms * Collector current IC (A) fT (MHz) Transition frequency 1 Collector current 100 10 1 0.01 (V) 0.5 (V) hFE Tc = 100°C 1 VCE (sat) Collector-emitter saturation voltage Common emitter VCE = 5 V 300 30 VBE 2.5 VCE (sat) – IC 2 500 2.0 Base-emitter voltage hFE – IC 1000 1.5 Common emitter Tc = 25°C VCE = 5 V 0.1 Collector current 1 IC IC max (pulsed) * 10 (A) 100 ms * DC operation Tc = 25°C 1 0.1 0.1 10 10 ms * IC max (continuous) *:Single non-repetitive pulse Tc = 25°C Curves must be de-rated linearly with increase in temperature. 1 VCEO max 10 Collector-emitter voltage 3 100 VCE 1000 (V) 2006-11-16 2SC5949 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2006-11-16