HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 (transistor): RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V IC −100 mA Collector current Q2 (MOS-FET) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS 10 V ID 50 mA DC drain current JEDEC ― JEITA ― TOSHIBA ― Weight: g (typ.) Q1, Q2 Common Ratings (Ta = 25°C) Marking Characteristics Symbol Rating Unit Collector power dissipation PC (Note 1) 200 mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range Note: FT Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum Equivalent ratings. Please design the appropriate reliability upon reviewing the Toshiba 6 5 Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Q1 Note 1: Total rating 1 1 2 Circuit (top view) 4 Q2 3 2007-11-01 HN7G02FU Q1 (Transistor) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −50 V, IE = 0 ⎯ ⎯ −100 nA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ⎯ ⎯ −100 nA DC current gain hFE VCE = −5 V, IC = −1 mA 120 ⎯ 400 Collector-emitter saturation voltage Input resistor VCE (sat) IC = 5 mA, IB = −0.25 mA ⎯ −0.1 −0.3 V ⎯ 3.29 4.7 6.11 kΩ Test Condition Min Typ. Max Unit R1 Q2 (MOS-FET) Electrical Characteristics (Ta = 25°C) Characteristics Symbol IGSS VGS = 10 V, VDS = 0 ⎯ ⎯ 1 μA V (BR) DSS ID = 100 μA, VGS = 0 20 ⎯ ⎯ V IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Vth VDS = 3 V, ID = 0.1 mA 0.5 ⎯ 1.5 V Forward transfer admittance ⎪Yfs⎪ VDS = 3 V, ID = 10 mA 20 ⎯ ⎯ mS Drain-source ON resistance RDS (ON) ID = 10 mA VGS = 2.5 V ⎯ 20 40 Ω Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage 2 2007-11-01 HN7G02FU Q1 (Transistor) IC – VI (ON) IC – VI (OFF) −3000 −50 (A) Collector current IC Collector current IC (A) −30 −10 −5 Ta = 100°C 25 −3 −25 −1 Common emitter −0.5 −0.3 −0.1 −1 −3 Input voltage −10 VI (ON) −30 −500 Ta = 100°C 25 −100 −30 −0 −100 Common emitter VCE = −5 V −0.2 −0.4 −0.6 −0.8 Input voltage (V) −1 VI (OFF) −1.4 −1.6 (V) −3 Ta = 100°C −500 −300 25 −100 −25 −50 −30 Common emitter Collector-emitter saturation voltage VCE (sat) (V) −1000 −1 −0.5 −0.3 −0.1 Ta = 100°C −0.05 −0.03 −25 25 Common emitter VCE = −5 V −10 −0.1 −1.2 VCE (sat) – IC hFE – IC −3000 DC current gain hFE −25 −300 −50 VCE = −0.2 V −0.3 −1000 −0.3 −1 −3 Collector current IC −10 −30 IC/IB = 20 −0.01 −0.1 −100 −0.3 −1 −3 Collector current (mA) 3 −10 IC −30 −100 (mA) 2007-11-01 HN7G02FU Q2 (MOS-FET) (a) Switching time test circuit ID 2.5 V OUT IN 10 μS VIN RL 50 Ω 0 2.5 V VDD = 3 V D.U. < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common source Ta = 25°C 90% (b) VIN VGS 10% 0 VDD 10% (c) VOUT VDS VDD 90% VDS (ON) tr tf ton ID – VDS ID – VDS (低電圧領域) 60 1.2 Common source Common source Ta = 25°C 1.0 2.5 2.2 2.5 40 Drain current ID (mA) Drain current ID (mA) 50 2.0 30 1.8 20 1.6 VGS = 1.4 V 10 toff Ta = 25°C 1.1 1.2 0.8 1.05 0.6 0.4 VGS = 1.0 V 0.95 0.2 0.9 0.8 1.2 0 0 2 4 6 8 Drain-source voltage 10 0 0 12 VDS (V) 0.1 0.2 0.4 Drain-source voltage IDR – VDS 50 30 0.3 VDS = 3 V 10 Ta = 25°C 5 3 D G 10 Drain current ID (mA) (mA) ドレイン逆電流 IDR VDS (V) Common source VGS = 0 IDR 0.5 0.3 S 0.1 0.05 0.03 0.01 0 0.6 ID – VGS 50 30 Common source 1 0.5 5 3 Ta = 100°C 1 0.5 0.3 25 −25 0.1 0.05 0.03 −0.2 −0.4 −0.6 −0.8 −1.0 Drain-source voltage −1.2 −1.4 −1.6 0.01 0 −1.8 VDS (V) 1 2 3 Gate-source voltage 4 4 5 VGS (V) 2007-11-01 HN7G02FU ⎪Yfs⎪ – ID C – VDS 100 Common source VGS = 0 V f = 1 MHz Ta = 25°C Common source 50 VDS = 3 V 50 Ta = 25°C 30 (pF) (mS) 30 Capacitance C Forward transfer admittance ⎪Yfs⎪ 100 10 10 5 Ciss 3 Coss Crss 1 5 0.5 3 0.5 1 3 5 10 30 50 0.3 0.1 100 0.3 0.5 1 Drain-source voltage Drain current ID (mA) VDS (ON) – ID 5 10 20 VDS (V) t – ID 1000 Common source VGS = 2.5 V 1000 Ta = 25°C 500 300 100 50 30 toff tf 100 ton tr ID 2.5 V VIN 5 0.5 10 μs 1 3 5 10 30 50 10 0.3 100 Drain current ID (mA) 1 50 Ω 0 10 VOUT RL Switching time t (ns) Drain-source ON resistance VDS (ON) (mV) 3000 3 3 VDD = 3 V 10 D.U. < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common source Ta = 25°C 30 100 Drain current ID (mA) PD – Ta Power Dissipation PD (mW) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 5 2007-11-01 HN7G02FU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01