TOSHIBA HN7G02FU_07

HN7G02FU
TOSHIBA Multi Chip Discrete Device
HN7G02FU
Power Management Switch Application, Inverter Circuit
Application, Driver Circuit Application and Interface
Circuit Application.
Unit: mm
Q1 (transistor): RN2110 Equivalent
Q2 (MOS-FET): 2SK1830 Equivalent
Q1 (Transistor) Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
IC
−100
mA
Collector current
Q2 (MOS-FET) Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
20
V
Gate-source voltage
VGSS
10
V
ID
50
mA
DC drain current
JEDEC
―
JEITA
―
TOSHIBA
―
Weight:
g (typ.)
Q1, Q2 Common Ratings (Ta = 25°C)
Marking
Characteristics
Symbol
Rating
Unit
Collector power dissipation
PC
(Note 1)
200
mW
Junction temperature
Tj
150
°C
Tstg
−55~150
°C
Storage temperature range
Note:
FT
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum Equivalent
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
6
5
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Q1
Note 1: Total rating
1
1
2
Circuit (top view)
4
Q2
3
2007-11-01
HN7G02FU
Q1 (Transistor) Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −50 V, IE = 0
⎯
⎯
−100
nA
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
⎯
⎯
−100
nA
DC current gain
hFE
VCE = −5 V, IC = −1 mA
120
⎯
400
Collector-emitter saturation voltage
Input resistor
VCE (sat)
IC = 5 mA, IB = −0.25 mA
⎯
−0.1
−0.3
V
⎯
3.29
4.7
6.11
kΩ
Test Condition
Min
Typ.
Max
Unit
R1
Q2 (MOS-FET) Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
IGSS
VGS = 10 V, VDS = 0
⎯
⎯
1
μA
V (BR) DSS
ID = 100 μA, VGS = 0
20
⎯
⎯
V
IDSS
VDS = 20 V, VGS = 0
⎯
⎯
1
μA
Vth
VDS = 3 V, ID = 0.1 mA
0.5
⎯
1.5
V
Forward transfer admittance
⎪Yfs⎪
VDS = 3 V, ID = 10 mA
20
⎯
⎯
mS
Drain-source ON resistance
RDS (ON)
ID = 10 mA VGS = 2.5 V
⎯
20
40
Ω
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
2
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HN7G02FU
Q1 (Transistor)
IC – VI (ON)
IC – VI (OFF)
−3000
−50
(A)
Collector current IC
Collector current IC
(A)
−30
−10
−5
Ta = 100°C
25
−3
−25
−1
Common emitter
−0.5
−0.3
−0.1
−1
−3
Input voltage
−10
VI (ON)
−30
−500
Ta = 100°C
25
−100
−30
−0
−100
Common emitter
VCE = −5 V
−0.2
−0.4
−0.6
−0.8
Input voltage
(V)
−1
VI (OFF)
−1.4
−1.6
(V)
−3
Ta = 100°C
−500
−300
25
−100
−25
−50
−30
Common emitter
Collector-emitter saturation voltage
VCE (sat) (V)
−1000
−1
−0.5
−0.3
−0.1
Ta = 100°C
−0.05
−0.03
−25
25
Common emitter
VCE = −5 V
−10
−0.1
−1.2
VCE (sat) – IC
hFE – IC
−3000
DC current gain hFE
−25
−300
−50
VCE = −0.2 V
−0.3
−1000
−0.3
−1
−3
Collector current IC
−10
−30
IC/IB = 20
−0.01
−0.1
−100
−0.3
−1
−3
Collector current
(mA)
3
−10
IC
−30
−100
(mA)
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HN7G02FU
Q2 (MOS-FET)
(a) Switching time test circuit
ID
2.5 V
OUT
IN
10 μS
VIN
RL
50 Ω
0
2.5 V
VDD = 3 V
D.U. <
= 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common source
Ta = 25°C
90%
(b) VIN
VGS
10%
0
VDD
10%
(c) VOUT
VDS
VDD
90%
VDS (ON)
tr
tf
ton
ID – VDS
ID – VDS (低電圧領域)
60
1.2
Common source
Common source
Ta = 25°C
1.0 2.5
2.2
2.5
40
Drain current ID (mA)
Drain current ID (mA)
50
2.0
30
1.8
20
1.6
VGS = 1.4 V
10
toff
Ta = 25°C
1.1
1.2
0.8
1.05
0.6
0.4
VGS = 1.0 V
0.95
0.2
0.9
0.8
1.2
0
0
2
4
6
8
Drain-source voltage
10
0
0
12
VDS (V)
0.1
0.2
0.4
Drain-source voltage
IDR – VDS
50
30
0.3
VDS = 3 V
10
Ta = 25°C
5
3
D
G
10
Drain current ID (mA)
(mA)
ドレイン逆電流 IDR
VDS (V)
Common source
VGS = 0
IDR
0.5
0.3
S
0.1
0.05
0.03
0.01
0
0.6
ID – VGS
50
30
Common source
1
0.5
5
3
Ta = 100°C
1
0.5
0.3
25
−25
0.1
0.05
0.03
−0.2 −0.4
−0.6
−0.8
−1.0
Drain-source voltage
−1.2
−1.4
−1.6
0.01
0
−1.8
VDS (V)
1
2
3
Gate-source voltage
4
4
5
VGS (V)
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HN7G02FU
⎪Yfs⎪ – ID
C – VDS
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Common source
50
VDS = 3 V
50
Ta = 25°C
30
(pF)
(mS)
30
Capacitance C
Forward transfer admittance ⎪Yfs⎪
100
10
10
5
Ciss
3
Coss
Crss
1
5
0.5
3
0.5
1
3
5
10
30
50
0.3
0.1
100
0.3
0.5
1
Drain-source voltage
Drain current ID (mA)
VDS (ON) – ID
5
10
20
VDS (V)
t – ID
1000
Common source
VGS = 2.5 V
1000 Ta = 25°C
500
300
100
50
30
toff
tf
100 ton
tr
ID
2.5 V
VIN
5
0.5
10 μs
1
3
5
10
30
50
10
0.3
100
Drain current ID (mA)
1
50 Ω
0
10
VOUT
RL
Switching time t (ns)
Drain-source ON resistance
VDS (ON) (mV)
3000
3
3
VDD = 3 V
10
D.U. <
= 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common source
Ta = 25°C
30
100
Drain current ID (mA)
PD – Ta
Power Dissipation PD
(mW)
200
150
100
50
0
0
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
5
2007-11-01
HN7G02FU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-11-01