TOSHIBA HN7G10FE

HN7G10FE
TOSHIBA Multichip Discrete Device
HN7G10FE
Power Management Switch Applications
Driver Circuit Applications
Interface Circuit Applications
•
Q1 (transistor): 2SC5376F equivalent
•
Q2 (MOSFET): SSM3K03FE equivalent
Unit: mm
Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
400
mA
Base current
IB
50
mA
1.
2.
3.
4.
5.
6.
EMITTER
BASE
DRAIN
SOURCE
GATE
COLLECTOR
Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDS
20
Gate-source voltage
VGSS
ID
Drain current
JEDEC
―
V
JEITA
―
10
V
TOSHIBA
50
mA
Rating
Unit
100
mW
Tj
150
°C
Tstg
−55~150
°C
2-2J1A
Weight: 0.003 g (typ.)
Q1, Q2 Common Ratings (Ta = 25°C)
Characteristic
Symbol
Power dissipation
PC (Note 1)
Junction temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Type Name
Pin Assignment (top view)
6
hFE Rank
78A
5
Q2
Q1
1
1
4
2
3
2007-11-01
HN7G10FE
Q1 (transistor) Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 15 V, IE = 0
⎯
⎯
0.1
μA
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
⎯
⎯
0.1
μA
300
⎯
1000
hFE (Note 2) VCE = 2 V, IC = 10 mA
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE (sat) (1)
IC = 10 mA, IB = 0.5 mA
⎯
15
30
VCE (sat) (2)
IC = 200 mA, IB = 10 mA
⎯
110
250
VBE (sat)
IC = 200 mA, IB = 10 mA
⎯
0.87
1.2
V
Min
Typ.
Max
Unit
mV
Note 2: hFE classification A: 300~600, B: 500~1000
Q2 (MOSFET) Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
IGSS
VGS = 10 V, VDS = 0
⎯
⎯
1
μA
V (BR) DSS
ID = 100 μA, VGS = 0
20
⎯
⎯
V
IDSS
VDS = 20 V, VGS = 0
⎯
⎯
1
μA
Vth
VDS = 3 V, ID = 0.1 mA
0.7
⎯
1.3
V
Forward transfer admittance
⎪Yfs⎪
VDS = 3 V, ID = 10 mA
25
50
⎯
mS
Drain-source ON-resistance
RDS (ON)
ID = 10 mA, VGS = 2.5 V
⎯
4
12
Ω
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Input capacitance
Ciss
VDS = 3 V, VGS = 0, f = 1 MHz
⎯
11.0
⎯
pF
Reverse transfer capacitance
Crss
VDS = 3 V, VGS = 0, f = 1 MHz
⎯
3.3
⎯
pF
Output capacitance
Coss
pF
Switching time
VDS = 3 V, VGS = 0, f = 1 MHz
⎯
9.3
⎯
Turn-on time
ton
VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V
⎯
0.16
⎯
Turn-off time
toff
VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V
⎯
0.19
⎯
μs
Switching Time Test Circuit
(a) Switching time test circuit
ID
2.5 V
OUT
RL
10 μS
VIN
50 Ω
IN
0
VDD = 3 V
D.U. <
= 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common source
Ta = 25°C
VDD
2.5 V
(b) VIN
VGS
0
90%
10%
VDD
10%
(c) VOUT
VDS
90%
VDS (ON)
tr
ton
2
tf
toff
2007-11-01
HN7G10FE
Q1 (Transistor)
IC – VCE
hFE – IC
1.0
10000
Common emitter
DC current gain hFE
(A)
Collector current IC
5
4
0.6
VCE = 2 V
3000
0.8
6
Common emitter
5000
Ta = 25°C
3
2
0.4
1
1000
Ta = 100°C
25
500
300
−25
100
50
0.2
30
IB = 0.5 mA
0
0
1
2
3
4
Collector-emitter voltage
10
0.1
5
0.3
1
VCE (V)
3
30
100
Collector current IC
(mA)
VCE (sat) – IC
Base-emitter saturation voltage
VBE (sat) (V)
Collector-emitter saturation voltage
VCE (sat) (mV)
30
100
50
30
Ta = 100°C
−25
25
5
3
0.3
1
3
10
30
100
Collector current IC
(mA)
300
Common emitter
IC/IB = 20
Ta = 25°C
10
5
3
1
0.5
0.3
0.1
0.1
1000
0.3
1
3
IC – VBE
Collector output capacitance Cob (pF)
Common emitter
VCE = 2 V
Collector current IC
(mA)
300
100
50
30
Ta = 100°C
25
−25
5
3
1
0.0
0.4
0.8
Base-emitter voltage
1.2
VBE (V)
100
300 500
(mA)
IE = 0 A
f = 1 MHz
50
Ta = 25°C
30
10
5
3
1
0.1
1.6
30
Cob – VCB
100
500
10
Collector current IC
1000
10
1000
50
Common emitter
500 IC/IB = 20
300
1
0.1
300
VBE (sat) – IC
1000
10
10
0.3
1
3
10
30
100
Collector-base voltage VCB (V)
3
2007-11-01
HN7G10FE
Q2 (S-MOS)
4
2007-11-01
HN7G10FE
Q2 (S-MOS)
5
2007-11-01
HN7G10FE
Q1, Q2 Common
P* – Ta
POWER DISSIPATION PC
(mW)
200
150
100
50
0
0
25
50
75
100
AMBIENT TEMPERATURE
125
150
175
Ta (°C)
*:Total rating
6
2007-11-01
HN7G10FE
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
7
2007-11-01