VISHAY DG306B

DG304B/306B/307B
Vishay Siliconix
CMOS Analog Switches
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D Low Level Switching Circuits
D Programmable Gain Amplifiers
D Portable and Battery Powered
Systems
"15-V Input Range
Fast Switching—tON: 110 ns
Low rDS(on): 30 W
Single Supply Operation
CMOS Logic Levels
Micropower: 30 nW
Full Rail-to-Rail Analog Signal Range
Low Signal Error
Wide Dynamic Range
Low Power Dissipation
DESCRIPTION
The DG304B, DG306B and DG307B monolithic CMOS
switches were designed for applications in communications,
instrumentation and process control. This series is well suited
for applications requiring fast switching and nearly flat
on-resistance over the entire analog range.
applications,
without
sacrificing
switching
speed.
Break-before-make switching action is guaranteed, and an
epitaxial layer prevents latchup. Single supply operation (for
positive switch voltages) is allowed by connecting the V– rail
to 0 V.
Designed on the Vishay Siliconix PLUS-40 CMOS process to
achieve low power consumption and excellent on/off switch
performance, these switches are ideal for battery powered
Each switch conducts equally well in both directions when on,
and blocks up to the supply voltage when off. These switches
are CMOS input compatible.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG304B
NC
D1
NC
S1
NC
IN1
GND
Plastic DIP
1
14
2
13
3
12
V+
D2
NC
4
11
S2
5
10
6
9
7
8
TRUTH TABLE
Logic
Switch
NC
0
OFF
IN2
1
ON
Logic “0” v 3.5 V
Logic “1”
1 w 11 V
V–
Top View
DG306B
NC
Plastic DIP
V+
1
14
S3
2
13
S4
D3
3
12
D4
11
D2
Logic
Switch
10
S2
0
OFF
9
IN2
1
ON
D1
S1
IN1
GND
Document Number: 71403
S-51204—Rev. B, 27-Jun-05
4
5
6
7
Top View
8
V–
TRUTH TABLE
Logic “0” v 3.5 V
Logic “1” w 11 V
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1
DG304B/306B/307B
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG307B
NC
S3
D3
Plastic DIP
V+
1
14
2
13
S4
12
D4
3
D1
4
11
D2
S1
5
10
S2
9
IN2
IN1
GND
6
7
Top View
8
Four SPST Switches per Package
TRUTH TABLE
Logic
SW1, SW2 SW3, SW4
0
OFF
ON
1
ON
OFF
V–
Logic “0” v 3.5 V
Logic “1” w 11 V
ORDERING INFORMATION
Temp Range
Package
Part Number
14-Pin Plastic DIP
DG304BDJ
14-Pin Plastic DIP
DG306BDJ
14-Pin Plastic DIP
DG307BDJ
DG304B
–40 to 85_C
DG306B
–40 to 85_C
DG307B
–40 to 85_C
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V–
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
Power Dissipationb
14-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputsa, VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2V or
30 mA, whichever occurs first
Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Continuous Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
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Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 11 mW/_C above 75_C
Document Number: 71403
S-51204—Rev. B, 27-Jun-05
DG304B/306B/307B
Vishay Siliconix
SPECIFICATIONSLEERER MERKER
Limits
Test Conditions Unless Specified
Parameter
V+ = 15 V, V– = –15 V
VIN = 3.5 V or 11 Vf
Symbol
–40 to 85_C
Tempb Mind
Typc
Maxd
Unit
15
V
30
50
75
W
Analog Switch
Analog Signal Rangee
VANALOG
Full
–15
Drain-Source On-Resistance
rDS(on)
VD = "10 V, IS = 10 mA
Room
Full
Source Off Leakage Current
IS(off)
VS = "14 V
VD = #14 V
Room
Full
–5
–100
"0.1
5
100
Drain Off Leakage Current
ID(off)
VS = "14 V
VD = #14 V
Room
Full
–5
–100
"0.1
5
100
Drain On Leakage Current
ID(on)
VD = VS = "14 V
Room
Full
–5
–200
"0.1
5
200
VIN = 5 V
Room
Full
–1
–0.001
VIN = 15 V
Room
Full
VIN = 0 V
Room
Full
nA
Digital Control
Input Current
with Input Voltage High
IINH
Input Current
with Input Voltage Low
IINL
0.001
–1
1
mA
–0.001
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time
Charge Injection
Room
110
Room
70
tOPEN
DG305A/307A ONLY, See Figure 3
Room
50
Q
CL = 1 nF, Rgen = 0, Vgen = 0 V, See Figure 4
Room
30
Room
14
Room
14
Room
40
VIN = 0 V
Room
6
VIN = 15 V
Room
7
62
Source-Off Capacitance
CS(off)
Drain-Off Capacitance
CD(off)
Channel-On Capacitance
CD(on)
Input Capacitance
See Figure 2
CIN
f = 1 MHz,
MH VS = 0 V
VS, VD = 0 V
f = 1 MHz
Off-Isolation
OIRR
VIN = 0 V, RL = 1 kW
Room
Crosstalk (Channel-to-Channel)
XTALK
VS = 1 Vrms, f = 500 kHz
Room
74
Room
Full
0.001
ns
pC
pF
p
dB
Power Supplies
Positive Supply Current
Negative Supply Current
I+
I–
VIN = 15 V or 0 V
(All Inputs)
Room
Full
–100
–0.001
100
mA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
Document Number: 71403
S-51204—Rev. B, 27-Jun-05
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DG304B/306B/307B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and " Power Supply
rDS(on) vs. VD and + Power Supply Voltage
r DS(on)– Drain-Source On-Resistance ( W )
r DS(on)– Drain-Source On-Resistance ( W )
100
TA = 25_C
80
"5 V
60
"7.5 V
40
"10 V
"15 V
20
"20 V
TA = 25_C
V– = 0 V
100
+7.5 V
80
+10 V
60
+15 V
+20 V
40
20
0
0
–20
–15
–10
–5
0
5
10
15
0
20
5
VD – Drain Voltage (V)
10
15
20
VD – Drain Voltage (V)
Input Switching Threshold vs. V+ and V–
Supply Voltages
Leakage Currents vs. Analog Voltage
10
10
TA = 25_C
9
0
ID(off) or IS(off)
8
7
6
ID(on)
V T (V)
I S, I D (pA)
–10
–20
5
4
3
–30
2
1
–40
0
–15 –12
–9
–6
–3
0
3
6
9
12
15
"5
0
Switching Time vs. Positive Supply Voltage
"20
Switching Time vs. Negative Supply Voltage
240
240
V– = –15 V
TA = 25_C
VINH = 15 V
VINL = 0 V
200
V+ = 15 V
TA = 25_C
VINH = 15 V
VINL = 0 V
200
tON
t ON , t OFF (ns)
t ON , t OFF (ns)
"15
V+, V– Positive & Negative Supplies (V)
VD or VS – Drain or Source Voltage (V)
160
120
tOFF
80
160
tON
120
tOFF
80
40
40
0
5
10
V+ – Positive Supply Voltage (V)
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4
"10
15
0
–5
–10
–15
V– – Negative Supply Voltage (V)
Document Number: 71403
S-51204—Rev. B, 27-Jun-05
DG304B/306B/307B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Supply Currents vs. Toggle Frequency
8
V+ = 15 V
RL = R
CL = 0
VS = Open
I+, I– (mA)
6
4
2
0
1k
10 k
100 k
1M
f – Frequency (Hz)
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
V–
Level
Shift/
Drive
VIN
V+
GND
D
V–
FIGURE 1.
TEST CIRCUITS
+15 V
Logic “1” = Switch On
V+
VS = 3 V
S
Logic
Input
D
VINH
50%
VO
0V
IN
RL
300 W
15 V
CL
33 pF
VS
V–
GND
90%
10%
0V
–15 V
CL (includes fixture and stray capacitance)
VO = VS
tON
tOFF
RL
RL + rDS(on)
Document Number: 71403
S-51204—Rev. B, 27-Jun-05
Switch
Output
FIGURE 2. Switching Time
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DG304B/306B/307B
Vishay Siliconix
TEST CIRCUITS
+15 V
V+
VS1 = 3 V
VS2 = 3 V
S1
D1
S2
D2
VO2
Switch
Output
RL1
300 W
V–
RL2
300 W
CL1
33 pF
CL2
33 pF
VINH
50%
0V
VO1
IN
GND
Logic “1” = Switch On
Logic
Input
VS1
50%
VO1
0V
VS2
VO2
Switch
Output
50%
0V
tBBM
–15 V
CL (includes fixture and stray capacitance)
FIGURE 3. Break-Before-Make SPDT (DG307B)
+15 V
Rg
V+
S
IN
Vg
VO
VO
CL
1 nF
3V
GND
DVO
D
INX
ON
V–
OFF
ON
Q = DVO x CL
–15 V
FIGURE 4. Charge Injection
APPLICATION HINTSLEERER MERKER
GND
Voltage
(V)
VIN
Logic Input
Voltage
VINH(min)/VINL(max)
(V)
VS or VD
Analog Voltage
Range
(V)
–15
0
11/3.5
–15 to 15
–20
0
11/3.5
–20 to 20
0
0
11/3.5
0 to 15
V+
Positive Supply
Voltage
(V)
V–
Negative Supply
Voltage
(V)
15
20
15
Notes:
a. Application Hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing.
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Document Number: 71403
S-51204—Rev. B, 27-Jun-05
DG304B/306B/307B
Vishay Siliconix
APPLICATIONS
+15 V
–15 V
10 kW
VIN
10 kW
VOUT
+15 V
–15 V
10 kW
10 kW
100 kW
1 MW
A1
A0
DG304B
Binary
Input
Gain
11
10
01
00
1
10
100
1000
FIGURE 5. Low Power Binary to 10n Gain Low Frequency Amplifier
+15 V
–15 V
–15 V
VIN1
+15 V
VOUT
VIN2
CMOS Logic
Input Select
High = VIN1
–15 V
+15 V
CMOS Logic
Gain Select
High = 10x
1x
10x
DG307B
GND
20 kW
180 kW
FIGURE 6. Low Power Non-Inverting Amplifier with Digitally Selectable Inputs and Gain
Document Number: 71403
S-51204—Rev. B, 27-Jun-05
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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