DG201A_MIL/202_MIL Vishay Siliconix Monolithic Quad SPST CMOS Analog Switches (Obsolete for non-hermetic. Use DG201B/202B as pin-for-pin replacements.) Wide Input Range Low Distortion Switching Can Be Driven from Comparators or Op Amps Without Limiting Resistors 15-V Input Range Low Off Leakage—ID(on): 0.1 nA Low On-Resistance—rDS(on): 115 44-V Maximum Supply Ratings TTL and CMOS Compatible Disk Drives Radar Systems Communications Systems Sample-and-Hold The DG201A_MIL and DG202_MIL are quad SPST analog switches designed to provide accurate switching over a wide range of input signals. When combining a low on-resistance and a wide signal range (15 V) with low charge-transfer these devices are well suited for industrial and military applications. switches will block up to 30 V peak-to-peak and have a 44-V absolute maximum power supply rating. Built on Vishay Siliconix’ high voltage metal gate process to achieve optimum switch performance, each switch conducts equally well in both directions when on. When off these The DG201A_MIL/202_MIL are available in hermetic packages. For plastic packages, use the DG201B/202B as pin-for-pin replacements. These two devices are differentiated by the type of switch actions (See Truth Table). Dual-In-Line DG201A_MIL IN1 LCC D1 IN1 NC IN2 D2 DG201A_MIL 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V– 4 13 V+ GND 5 12 NC S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Key 3 2 1 20 19 S1 4 18 S2 V– 5 17 V+ NC 6 16 NC 7 15 NC 8 14 GND S4 9 10 11 12 S3 13 D4 IN4 NC IN3 D3 Top View Top View Logic DG201A_MIL DG202_MIL 0 ON OFF 1 OFF ON Logic “0” 0.8 V Logic “1” 2.4 V Document Number: 70036 S-00405—Rev. G, 21-Feb-00 www.vishay.com FaxBack 408-970-5600 4-1 DG201A_MIL/202_MIL Vishay Siliconix ORDERING INFORMATION Temp Range Package Part Number DG201AAK DG201AAK/883, JM38510/12302BEA –55 55 to 125 125_C C 16 Pi CerDIP 16-Pin C DIP 7705301EA DG202AK DG202AK/883 JM38510/12302BEC 16-Pin Sidebraze –55 125_C 55 to 125 C 7705301EC LCC-20 77053012A ABSOLUTE MAXIMUM RATINGS Storage Temperature Voltages Referenced to V– V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V (K, Z Suffix) . . . . . . . . . . . . . . . . . –65 to 150_C (J, Y Suffix) . . . . . . . . . . . . . . . . . –65 to 125_C Power Dissipation (Package)b 16-Pin CerDIP and Sidebrazec . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW LCC-20d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750 mW GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or 20 mA, whichever occurs first Notes: a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 12 mW/_C above 75_C d. Derate 10 mW/_C above 75_C Current, Any Terminal Except S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . . 70 mA SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ S V– – + V+ GND INX D V– FIGURE 1. www.vishay.com S FaxBack 408-970-5600 4-2 Document Number: 70036 S-00405—Rev. G, 21-Feb-00 DG201A_MIL/202_MIL Vishay Siliconix Test Conditions Unless Specified Parameter Symbol V+ = 15 V, V– = –15V VIN = 2.4 V, 0.8 Vf A Suffix –55 to 125_C Tempb Mind Full –15 Typc Maxd Unit 15 V Analog Switch Analog Signal Rangee VANALOG Room 115 175 rDS(on) VD = 10 V, IS = 1 mA Source Off Leakage Current IS(off) VS = 14 V, VD = 14 V Room Full –1 –100 0.02 1 100 Drain Off Leakage Current ID(off) VD = 14 V, VS = 14 V Room Full –1 –100 0.02 1 100 Drain On Leakage Current ID(on) VS = VD = 14 V Room Full –1 –200 0.15 1 200 VIN = 2.4 V Room Full –1 –1 –0.0004 VIN = 15 V Room Full IINL VIN = 0 V Room Full Turn-On Time tON Turn-Off Time tOFF See Switching g Time T t Circuit Test Ci it Drain-Source On-Resistance Full 250 W nA A Digital Control p Current with Input Input High I t Voltage V lt Hi h Input Current with Input Voltage Low IINH 0.003 –1 –10 1 10 mA A –0.0004 Dynamic Characteristics Charge Injection Q Source-Off Capacitance CS(off) Drain-Off Capacitance CD(off) Channel On Capacitance CD(on) + CS(on) Off Isolation OIRR Channel-to-Channel Crosstalk XTALK CL = 1000 pF, Vg= 0 V Rg = 0 W VS = 0 V, VIN = 5 V, f = 1 MHz VD = VS = 0 V, VIN = 0 V f = 1 MHz VIN = 5 V, RL = 75 W VS = 2 V, f = 100 kHz Room 480 600 Room 370 450 Room 20 Room 5 Room 5 Room 16 Room 70 Room 90 ns pC pF F dB Power Supply Positive Supply Current I+ Negative Supply Current I– Room 0.9 All Channels On or Off 2 mA Room –1 –0.3 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Document Number: 70036 S-00405—Rev. G, 21-Feb-00 www.vishay.com S FaxBack 408-970-5600 4-3 DG201A_MIL/202_MIL Vishay Siliconix _ Charge Injection vs. Analog Voltage rDS(on) vs. VD and Power Supply Voltage 70 300 V+ = 15 V, V– = –15 V TA = 25_C 60 TA = 25_C 250 50 5 V r DS(on) ( ) 40 Q (pC) 30 QD 20 10 200 8 V 10 V 150 12 V QS 0 15 V 100 –10 –20 50 –30 –15 –10 –5 0 5 10 15 –25 –15 –5 VANALOG – Analog Voltage (V) rDS(on) vs. VD and Temperature 15 25 Leakage vs. Temperature 100 nA 180 V+ = 15 V, V– = –15 V 160 V+ = 15 V, V– = –15 V VD = 14 V 10 nA 140 1 nA 125_C 120 I S, I D r DS(on) ( ) 5 VD – Drain Voltage (V) 85_C 100 pA IS(off), ID(off), ID(on) 25_C 100 10 pA 0_C 80 –40_C 1 pA –55_C 60 –15 –10 –5 0 5 VD – Drain Voltage (V) 10 0.1 pA –55 –35 15 Supply Current vs. Switching Frequency 5 25 45 65 Temperature (_C) 85 105 125 Insertion Loss vs. Frequency 2.0 6 4 1 M 0.0 V+ = 15 V V– = –15 V V+ = 15 V V– = –15 V Ref. 0.0 dBm 2 I+ LOSS (dB) I+, I– (mA) –15 0 I– –2.0 1 k See Figures 3 and 4 –4.0 –2 RL = 50 –6.0 –4 –6 1k 10 k 100 k f – Frequency (Hz) www.vishay.com S FaxBack 408-970-5600 4-4 1M 1k 10 k 100 k 1M f – Frequency (Hz) 10 M Document Number: 70036 S-00405—Rev. G, 21-Feb-00 DG201A_MIL/202_MIL Vishay Siliconix _ Crosstalk and Off Isolation vs. Frequency Leakage Current vs. Analog Voltage 0 –20 V+ = 15 V V– = –15 V Ref. 0 dBm RL = 50 8 6 4 –60 I S, I D (pA) X TALK, ISO (dB) –40 10 Off Isolation –80 Crosstalk –100 2 IS(off), ID(off) 0 ID(on) –2 V+ = 15 V V– = –15 V TA = 25_C For ID(off), VS = –VD For IS(off), VD = – VS –4 –120 See Figures 3 and 4 –6 –140 –8 –160 10 k –10 100 k 1M f – Frequency (Hz) 10 M –20 Switching Time vs. Temperature 1000 V+ = 15 V V– = –15 V VS = 2 V 900 800 800 700 700 t ON, t OFF (ns) t ON, t OFF (ns) 20 Switching Time vs. Power Supply Voltage 1000 900 –15 –10 –5 0 5 10 15 VD or VS – Drain or Source Voltage (V) 600 tON 500 400 600 tON 500 400 tOFF tOFF 300 300 200 200 100 –55 –35 –15 5 25 45 65 Temperature (_C) Document Number: 70036 S-00405—Rev. G, 21-Feb-00 85 105 125 100 10 12 14 16 18 20 22 V+ – Positive Supply (V) www.vishay.com S FaxBack 408-970-5600 4-5 DG201A_MIL/202_MIL Vishay Siliconix VO is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge of output waveform. +15 V V+ D S VS = +2 V VO IN tr <20 ns tf <20 ns 50% 0V tOFF CL 35 pF RL 1 kW 3V 3V Logic Input V– GND 90% Switch Output –15 V VO tON RL VO = VS RL + rDS(on) FIGURE 2. Switching Time +15 V C +15 V C V+ S1 VS S VS VO D 50 W IN1 0V, 2.4 V Rg = 50 W 0V, 2.4 V D1 Rg = 50 W V+ RL IN S2 VO D2 NC GND V– C RL IN2 0V, 2.4 V GND V– C –15 V C = RF bypass VS Off Isolation = 20 log XTALK Isolation = 20 log VO FIGURE 3. Off Isolation VS –15 V VO FIGURE 4. Channel-to-Channel Crosstalk +15 V DVO Rg VO V+ S D IN Vg CL 1000 pF 3V GND VO INX ON OFF ON V– DVO = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x DVO –15 V FIGURE 5. Charge Injection www.vishay.com FaxBack 408-970-5600 4-6 Document Number: 70036 S-00405—Rev. G, 21-Feb-00 DG201A_MIL/202_MIL Vishay Siliconix V+ Positive Supply Voltage (V) V– Negative Supply Voltage (V) VIN Logic Input Voltage VINH(min)/VINL(max) (V) VS or VD Analog Voltage Range (V) 15 –15 2.4/0.8 –15 to 15 10 –12 2.4/0.8 –12 to 12 12 –10 2.2/0.6 –10 to 10 8b –8 2.0/0.5 –8 to 8 Notes: a. Application Hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing. b. Operation below 8 V is not recommended. +15 V V+ Logic Input Low = Sample High = Hold 1 kW +15 V +15 V –15 V – J202 LM101A VIN + 2N4400 5 MW 50 pF 200 W VOUT 5.1 MW DG201A_MIL V– 1000 pF J500 30 pF J507 –15 V Aquisition Time Aperature Time Sample to Hold Offset Droop Rate = 25 ms = 1 ms = 5 mV = 5 mV/s –15 V FIGURE 6. Sample-and-Hold Document Number: 70036 S-00405—Rev. G, 21-Feb-00 www.vishay.com FaxBack 408-970-5600 4-7 DG201A_MIL/202_MIL Vishay Siliconix +15 V 160 V1 C4 fC4 Select 150 pF 120 C3 fC3 Select Voltage Gain – dB 1500 pF C2 TTL Control 0.015 mF fC2 Select C1 0.15 mF fC1 Select 80 fC1 fC2 fC3 fC4 40 fL1 0 fL2 fL3 fL4 DG201A_MIL GND V– –40 1 –15 V 10 100 1k R1 = 10 kW –15 V VOUT LM101A + R2 = 10 kW 100 k 1M f – Frequency (Hz) R3 = 1 MW +15 V – 10 k AL (Voltage Gain Below Break Frequency) = 1 fC (Break Frequency) = 2pR3CX fL (Unity Gain Frequency) = rDS(on) Max Attenuation = 30 pF 10 kW R3 R1 = 100 (40 dB) 1 2pR1CX –47 dB FIGURE 7. Active Low Pass Filter with Digitally Selected Break Frequency VIN1 +5 V +15 V VL V+ 30 pF +15 V + LM101A VIN2 – +15 V DG419 –15 V RF1 18 kW RF1 9.9 kW RF1 100 kW RG1 2 kW RG2 100 W RG3 100 W DG202_MIL CH GND V– –15 V Gain = Gain 1 (x1) RF + RG Gain 2 (x10) RG Gain 3 (x100) Gain 4 (x1000) V– GND Logic High = Switch On –15 V FIGURE 8. A Precision Amplifier with Digitally Programable Input and Gains www.vishay.com FaxBack 408-970-5600 4-8 Document Number: 70036 S-00405—Rev. G, 21-Feb-00 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1