Composite Transistors XN6543 Silicon NPN epitaxial planer transistor Unit: mm +0.2 For low-noise amplification (2GHz band) 2.8 –0.3 +0.25 1.5 –0.05 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 15 V Rating Collector to emitter voltage of element Emitter to base voltage Collector current VCEO 10 V VEBO 2 V IC 65 mA PT 200 mW Total power dissipation Overall Junction temperature Storage temperature Tj 150 ˚C Tstg –55 to +150 ˚C 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2) 4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 9Y Internal Connection 6 Tr1 4 ■ Electrical Characteristics Parameter 1 2 5 *1 +0.1 +0.1 0 to 0.05 0.4±0.2 ■ Absolute Maximum Ratings 1.45±0.1 +0.1 3 0.1 to 0.3 Parameter 0.5 –0.05 0.95 4 0.16–0.06 2SC3904 × 2 elements 2 0.95 +0.2 2.9 –0.05 1.1–0.1 ● +0.2 ■ Basic Part Number of Element 5 0.8 ● Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 ■ Features ● 0.65±0.15 1 6 0.3 –0.05 0.65±0.15 Tr2 3 (Ta=25˚C) Symbol Conditions min typ Collector cutoff current ICBO VCB = 10V, IE = 0 Emitter cutoff current IEBO VEB = 1V, IC = 0 Forward current transfer ratio hFE VCE = 8V, IC = 20mA 50 120 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 8V, IC = 20mA 0.5 0.99 Transition frequency fT VCE = 8V, IC = 20mA 7.0 8.5 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Forward transfer gain | S21e |2 VCE = 8V, IC = 20mA, f = 1.5GHz 0.6 7 max Unit 1 µA 1 µA 300 GHz 1.0 9 Power gain GUM VCE = 8V, IC = 20mA, f = 1.5GHz 10 Noise figure NF VCE = 8V, IC = 7mA, f = 1.5GHz 2.2 pF dB dB 3.0 dB Ratio between 2 elements 1 Composite Transistors XN6543 PT — Ta IC — VCE 240 IC — VBE 120 30 VCE=8V 25 160 120 80 40 20 200µA 15 150µA 10 100µA 5 0 80 120 160 Ambient temperature Ta (˚C) 2 –25˚C 0.01 1 3 10 30 120 25˚C 80 –25˚C 40 0.3 1 3 10 12 30 0.2 30 100 10 Collector to base voltage VCB (V) 1.2 8 6 4 2 3 1 10 30 100 NF — IC 6 VCE=8V f=1.5GHz Ta=25˚C Noise figure NF (dB) 5 8 6 4 0 0.1 1.0 Collector current IC (mA) 4 3 2 1 2 0 0.8 0 100 VCE=8V f=1.5GHz Ta=25˚C 10 Power gain GUM (dB) Collector output capacitance Cob (pF) 0.4 0.6 VCE=8V f=1.5GHz Ta=25˚C GUM — IC 0.6 10 0.4 fT — IC Collector current IC (mA) 0.8 3 0.2 Base to emitter voltage VBE (V) Ta=75˚C 160 0 0.1 100 f=1MHz IE=0 Ta=25˚C 1 0 12 12 Cob — VCB 1.0 10 200 Collector current IC (mA) 1.2 8 VCE=8V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) Ta=75˚C 25˚C 0.3 6 hFE — IC 1 0.001 0.1 4 240 IC/IB=10 –25˚C 40 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 0.1 Ta=75˚C 60 0 0 Transition frequency fT (GHz) 40 25˚C 80 20 50µA 0 0 2 100 Collector current IC (mA) 200 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C IB=250µA 0.3 1 3 10 30 Collector current IC (mA) 100 0 0.1 0.3 1 3 10 30 Collector current IC (mA) 100