TC7MH574FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7MH574FK Octal D-Type Flip-Flop with 3-State Output The TC7MH574FK is an advanced high speed CMOS octal flip-flop with 3-state output fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent bipolar schottky TTL while maintaining the CMOS low power dissipation. This 8 bit D-type flip-flop is controlled by a clock input (CK) and an output enable input (OE). When the OE input is high, the eight outputs are in a high impedance state. An input protection circuit ensures that 0 to 7 V can be applied to the input pins without regard to the supply voltage. This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltages. Weight: 0.03 g (typ.) Features · High speed: fmax = 180 MHz (typ.) (VCC = 5 V) · Low power dissipation: ICC = 4 µA (max) (Ta = 25°C) · High noise immunity: VNIH = VNIL = 28% VCC (min) · Power down protection is provided on all inputs. · Balanced propagation delays: tpLH ≈ tpHL · Wide operating voltage range: VCC (opr) = 2~5.5 V · Low noise: VOLP = 1.0 V (max) · Pin and function compatible with 74ALS574 1 2001-10-23 TC7MH574FK Pin Assignment (top view) IEC Logic Symbol OE 1 20 VCC D0 2 19 Q0 D1 3 18 Q1 D2 17 4 OE CK D0 D1 Q2 D3 5 16 Q3 D4 6 15 Q4 D5 7 14 Q5 D2 D3 D6 8 13 D5 D6 Q6 9 12 Q7 GND 10 11 CK D7 D4 D7 (1) (11) EN C1 (2) (19) 1D (3) (18) (4) (17) (5) (16) (6) (15) (7) (14) (8) (13) (9) (12) Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7 Truth Table Inputs Outputs OE CK D H X X Z X Qn L L L L L H H X: Don’t care Z: High impedance Qn: No change System Diagram D0 2 D1 3 D 11 D2 4 D CK Q D3 5 D CK Q D4 6 D CK Q D5 7 D CK Q D6 8 D CK Q D7 9 D CK Q D CK Q Q CK CK 1 OE 19 Q0 18 Q1 17 16 Q2 Q3 2 15 Q4 14 Q5 13 Q6 12 Q7 2001-10-23 TC7MH574FK Maximum Ratings Characteristics Symbol Rating Unit Supply voltage range VCC -0.5~7.0 V DC input voltage VIN -0.5~7.0 V DC output voltage VOUT -0.5~VCC + 0.5 V Input diode current IIK -20 mA Output diode current IOK ±20 mA DC output current IOUT ±25 mA DC VCC/ground current ICC ±75 mA Power dissipation PD 180 mW Storage temperature Tstg -65~150 °C Symbol Rating Unit Supply voltage VCC 2.0~5.5 V Input voltage VIN 0~5.5 V VOUT 0~VCC V Operating temperature Topr -40~85 °C Input rise and fall time dt/dv Recommended Operating Conditions Characteristics Output voltage 0~100 (VCC = 3.3 ± 0.3 V) 0~20 (VCC = 5 ± 0.5 V) 3 ns/V 2001-10-23 TC7MH574FK Electrical Characteristics DC Characteristics Characteristics High level Symbol Ta = 25°C Test Condition VCC (V) Min Typ. Max Min Max 2.0 1.50 ¾ ¾ 1.50 ¾ 3.0~5.5 VCC ´ 0.7 ¾ ¾ VCC ´ 0.7 ¾ 2.0 ¾ ¾ 0.50 ¾ 0.50 3.0~5.5 ¾ ¾ VCC ´ 0.3 ¾ VCC ´ 0.3 2.0 1.9 2.0 ¾ 1.9 ¾ 3.0 2.9 3.0 ¾ 2.9 ¾ 4.5 4.4 4.5 ¾ 4.4 ¾ IOH = -4 mA 3.0 2.58 ¾ ¾ 2.48 ¾ IOH = -8 mA 4.5 3.94 ¾ ¾ 3.80 ¾ 2.0 ¾ 0 0.1 ¾ 0.1 ¾ VIH Input voltage Low level ¾ VIL IOH = -50 mA High level VOH VIN = VIH or VIL Output voltage IOL = 50 mA Low level VOL Ta = -40~85°C Unit V V 3.0 ¾ 0 0.1 ¾ 0.1 4.5 ¾ 0 0.1 ¾ 0.1 IOL = 4 mA 3.0 ¾ ¾ 0.36 ¾ 0.44 IOL = 8 mA 4.5 ¾ ¾ 0.36 ¾ 0.44 5.5 ¾ ¾ ±0.25 ¾ ±2.50 mA VIN = VIH or VIL VIN = VIH or VIL 3-state output off-state current IOZ Input leakage current IIN VIN = 5.5 V or GND 0~5.5 ¾ ¾ ±0.1 ¾ ±1.0 mA Quiescent supply current ICC VIN = VCC or GND 5.5 ¾ ¾ 4.0 ¾ 40.0 mA VOUT = VCC or GND Timing Requirements (Input: tr = tf = 3 ns) Characteristics Minimum pulse width (CK) Minimum set-up time Minimum hold time Symbol Ta = 25°C Test Condition tw (H) tw (L) ¾ ts ¾ th ¾ 4 Ta = -40~85°C VCC (V) Typ. Limit Limit 3.3 ± 0.3 ¾ 5.0 5.0 5.0 ± 0.5 ¾ 5.0 5.0 3.3 ± 0.3 ¾ 3.5 3.5 5.0 ± 0.5 ¾ 3.5 3.5 3.3 ± 0.3 ¾ 1.5 1.5 5.0 ± 0.5 ¾ 1.5 1.5 Unit ns ns ns 2001-10-23 TC7MH574FK AC Characteristics (Input: tr = tf = 3 ns) Characteristics Symbol Ta = 25°C Test Condition VCC (V) Propagation delay time (CK-Q) 3-state output enable time Min Typ. Max Min Max 15 ¾ 8.5 13.2 1.0 15.5 50 ¾ 11.0 16.7 1.0 19.0 15 ¾ 5.6 8.6 1.0 10.0 50 ¾ 7.1 10.6 1.0 12.0 15 ¾ 8.2 12.8 1.0 15.0 50 ¾ 10.7 16.3 1.0 18.5 15 ¾ 5.9 9.0 1.0 10.5 50 ¾ 7.4 11.0 1.0 12.5 3.3 ± 0.3 50 ¾ 11.0 15.0 1.0 17.0 5.0 ± 0.5 50 ¾ 7.1 10.1 1.0 11.5 15 80 125 ¾ 65 ¾ 50 50 75 ¾ 45 ¾ 15 130 180 ¾ 110 ¾ 50 85 115 ¾ 75 ¾ 3.3 ± 0.3 50 ¾ ¾ 1.5 ¾ 1.5 5.0 ± 0.5 50 ¾ ¾ 1.0 ¾ 1.0 ¾ 5.0 ± 0.5 tpZL tpZH 3-state output disable time CL (pF) 3.3 ± 0.3 tpLH tpHL tpLZ tpHZ 3.3 ± 0.3 RL = 1 kW 5.0 ± 0.5 RL = 1 kW 3.3 ± 0.3 Maximum clock frequency fmax ¾ 5.0 ± 0.5 Output to output skew tosLH tosHL Input capacitance Output capacitance Power dissipation capacitance (Note1) Ta = -40~85°C Unit ns ns ns MHz ns CIN ¾ ¾ 4 10 ¾ 10 pF COUT ¾ ¾ 6 ¾ ¾ ¾ pF ¾ 28 ¾ ¾ ¾ pF CPD (Note2) Note1: This parameter is guaranteed by design. tosLH = |tpLHm - tpLHn|, tosHL = |tpHLm - tpHLn| Note2: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD･VCC･fIN + ICC/8 (per F/F) And the total CPD when n pcs of latch operate can be gained by the following equation: CPD (total) = 20 + 8･n 5 2001-10-23 TC7MH574FK Noise Characteristics (Input: tr = tf = 3 ns) Characteristics Ta = 25°C Test Condition Symbol VCC (V) Typ. Limit Unit Quiet output maximum dynamic VOL VOLP CL = 50 pF 5.0 0.8 1.0 V Quiet output minimum dynamic VOL VOLV CL = 50 pF 5.0 -0.8 -1.0 V Minimum high level dynamic input voltage VIH VIHD CL = 50 pF 5.0 ¾ 3.5 V Maximum low level dynamic input voltage VIL VILD CL = 50 pF 5.0 ¾ 1.5 V Input Equivalent Circuit Input 6 2001-10-23 TC7MH574FK Package Dimensions Weight: 0.03 g (typ.) 7 2001-10-23 TC7MH574FK RESTRICTIONS ON PRODUCT USE 000707EBA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 8 2001-10-23