TA4800AF TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4800AF 1A Output Current Low Dropout Voltage Regulator The TA4800AF consists of small-surface mount type low-dropout regulators with an output current of 1 A (maximum). The output voltage can be arbitrarily set by external resistance. Features HSIP5-P-1.27B • Maximum output current : 1 A • Output voltage Weight : 0.36 g (Typ.) : VOUT = 1.5 V ∼ 9.0 V • Reference voltage accuracy : VREF ± 2.5% (@Tj = 25°C) • Low quiescent current • Low standby current (output OFF mode): 0.5 μA (Typ.) • Low-dropout voltage : 850 μA (Typ.) (@VOUT = 3.3 V ,IOUT = 0 A) : VD = 0.5 V (Max) (@VOUT = 3.3 V, IOUT = 500 mA) • Protection function : Over current protection / thermal shutdown • Package type : Surface-mount New PW-Mold5pin Pin Assignment Mark 1 NC 2 3 4 5 IN GND OUT ADJ Marking 3 4800 Part No. (or abbreviation code) AF Lot No. 1 2 3 4 5 A line indicates lead (Pb) - free package or lead (Pb) – free finish. 1 2006-11-06 TA4800AF Pin Description Pin No. Symbol 1 NC Non-connection 2 IN Input terminal. Connected by capacitor (CIN) to GND. 3 GND 4 OUT Output terminal. Connected by capacitor (COUT) to GND. ADJ Output voltage feedback to regulator. It is connected to an error amplifier with VREF=1.245 V (Typ.). 5 Description Ground terminal How to Order Product No. TA4800AF (T6L1,Q) Package Package Type and Capacity New PW-Mold5pin : Surface-mount Tape (2000 pcs/reel) Block Diagram IN OUT Over-current protection Overtemperature protection ADJ Control circuit Reference voltage 1.245 V (Typ.) GND 2 2006-11-06 TA4800AF Absolute Maximum Rating (Ta = 25°C) Symbol Rating Unit Input voltage VIN 16 V Output current IOUT 1 A Operating junction temperature Tj(opr) -40~135 °C Characteristic Junction temperature Tj 150 °C Storage temperature Tstg −55~150 °C Power dissipation Thermal resistance Ta = 25°C 1 PD Tc= 25°C W 10 junction-ambient Rth(j-a) 125 junction-case Rth(j-c) 12.5 °C/W Note 1: Do not apply current and voltage (including reverse polarity) to any pin that is not specified. Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Operating Input Voltage Range Characteristic Input voltage Symbol Min Typ. Max Unit VIN 2.5(Note2) ⎯ 16.0 V Note 3: This is the voltage at which the IC begins operating. VD must be considered when determining the best input voltage for the application. Output Voltage Range Characteristic Output voltage Symbol Min Typ. Max Unit VOUT 1.5 ⎯ 9.0 V Protection Function (Reference) Characteristic Thermal shutdown Thermal shutdown hysteresis width Symbol TSD TSD(hys) Peak circuit current IPEAK Short circuit current ISC Test Condition VIN = 4.3 V Min Typ. Max Unit 150 170 ⎯ °C °C ⎯ 15 ⎯ VIN = 5.3 V, Tj = 25°C ⎯ 1.7 ⎯ VIN = 8.3 V, Tj = 25°C ⎯ 2.0 ⎯ VIN = 5.3 V, Tj = 25°C ⎯ 1.1 ⎯ VIN = 16V , Tj = 25°C ⎯ 0.7 ⎯ A A Note 4: Ensure that the devices operate within the limits of the maximum rating when in actual use. 3 2006-11-06 TA4800AF Electrical Characteristics (Unless otherwise specified, VEN = VIN, VOUT = 3.3 V, CIN = 0.33 μF, COUT = 3.3 μF, Tj = 25°C) Characteristic Reference voltage Symbol VREF Test Condition VIN = 4.3 V Min Typ. Max Unit 1.214 1.245 1.276 V ⎯ 8 24 mV mV Line regulation Reg･line 4.3 V < = VIN < = 8.3 V, IOUT = 500 mA Load regulation Reg･load VIN = 4.3 V, 5 mA < =1A = IOUT < ⎯ 5 20 4.3 V < = VIN < = 8.3 V, IOUT = 0 A ⎯ 0.85 1.70 4.3 V < = VIN < = 8.3 V, IOUT = 1 A ⎯ 10 20 VIN = 2.1 V, IOUT = 0 A ⎯ 3.3 4.0 VIN = 3.5 V, IOUT = 1 A ⎯ 17.0 28.5 Quiescent current Starting quiescent current IB IBstart mA mA Output noise voltage VNO VIN = 5.3 V, IOUT = 50 mA, 10 Hz < =f< = 100 kHz ⎯ 100 ⎯ μVrms Ripple rejection R.R. VIN = 5.3 V, IOUT = 50 mA, f = 120 Hz ⎯ 63 ⎯ dB Dropout voltage VD IOUT = 500 mA ⎯ 0.32 0.50 IOUT = 1 A ⎯ 0.69 ⎯ VIN = 5.3 V, IOUT = 5 mA, 0°C < = Tj < = 125°C ⎯ 0.3 ⎯ Average temperature coefficient of output voltage TCVO 4 V mV/°C 2006-11-06 TA4800AF Electrical Characteristics Common to All Products • Tj = 25°C in the measurement conditions of each item is the standard condition when a pulse test is carried out, and any drift in the electrical characteristic due to a rise in the junction temperature of the chip may be disregarded. Standard Application Circuit CIN 0.33 μF IN OUT TA4800AF GND R1 COUT 3.3 μF ADJ Load R2 • Be sure to connect a capacitor near the input terminal and output terminal between both terminals and GND. The use of a monolithic ceramic capacitor (B Characteristic or X7R) of low ESR (equivalent series resistance) is recommended. The IC may oscillate due to external conditions (output current, temperature, or the type of the capacitor used). The type of capacitor required must be determined by the actual application circuit in which the IC is used. Setting Output Voltage • The output voltage is determined by the equation shown below. When you control the output voltage with R1, a recommended value to use for R2 is 5 kΩ. R1 and R2must be placed as close as possible to each other, and the board trace to the ADJ terminal must be kept as short as possible. R1 VOUT = VREF × ( 1 + ) R2 The notice in case of application • The IC might be destroyed if a voltage greater than the input terminal voltage is applied to the output terminal, or if the input terminal is connected to GND during operation. To prevent such an occurrence, connect a diode as in the following diagram. CIN 0.33 μF IN OUT TA4800AF GND R1 ADJ COUT 3.3 μF Load R2 • There is a possibility that internal parasitic devices may be generated when momentary transients cause a terminal’s potential to fall below that of the GND terminal. In such case, that the device could be destroyed. The voltage of each terminal and any state must therefore never fall below the GND potential. 5 2006-11-06 TA4800AF 12 Condition: Number of IC = 1 Reflow soldering on a ceramic substrate VIN = 5.3 V VOUT = 3.3V 8 6 4 2 0 3.4 VOUT (V) Ta = Tc 10 VOUT – Tj 3.5 Output voltage Allowable power dissipation PDmax (W) PDmax – Ta 50 × 50 × 0.8 mmt 30 × 30 × 0.8 mmt 100 mA I OUT = 5 mA 3.3 500 mA 3.2 Single 0 20 40 60 80 100 Ambient temperature 120 Ta 140 3.1 −50 160 0 50 100 Junction temperature (°C) VOUT – VIN Tj 150 (°C) I B – VIN 4 20 I OUT = 500 mA 10 mA 100 mA Quiescent current Output voltage I B (mA) 3 VOUT (V) Tj = 25°C 2 1 VOUT = 3.3V 0 Tj = 25°C 0 2 4 6 Input voltage VIN 15 10 I OUT = 500 mA 5 100 mA 0 8 0 2 (V) 4 Input voltage I B – Tj 6 VIN (V) 30 VIN = 5.3 V Tj = 25°C I B (mA) VIN = 5.3 V 20 Quiescent current I B (mA) 8 I B – IOUT 30 Quiescent current 10 mA I OUT = 1 A 10 20 10 0A 0 −50 0 50 Junction temperature 100 Tj 0 150 (°C) 0 200 400 Output curren 6 600 I OUT 800 1000 (mA) 2006-11-06 TA4800AF VOUT – I OUT VOUT – I OUT (V) 4 3.3 Output voltage Output voltage 3 VOUT 3.4 VOUT (V) 3.5 3.2 VIN = 5.3 V VOUT = 3.3V Tj = 25°C 3.1 0 200 400 600 Output curren I OUT 800 2 1 VIN = 5.3 V VOUT = 3.3V Tj = 25°C 0 1000 0 (mA) 0.5 1 Output curren VD – I OUT (A) (V) 85℃ 25℃ 0.4 0.2 0 200 400 600 I OUT 800 I OUT = 1 A 0.6 VD 125℃ Dropout voltage (V) Tj = −40℃ 0.6 VD Dropout voltage I OUT 2.5 0.8 Output curren 0.4 500 mA 0.2 100 mA 0 −50 1000 (mA) 0 50 100 Junction temperature I PEAK – Tj Tj 150 (°C) I PEAK – VD 3.0 I PEAK (A) 2.5 I PEAK (A) 2 VD – Tj 0.8 0 1.5 2.0 2.5 2.0 Peak output current Peak output current 1.5 1.0 0.5 VIN = 5.3 V 0 -50 0 50 Junction temperature 100 Tj 1.5 1.0 0.5 Ta = 25℃ 0 150 (°C) 0 5 10 Dropout voltage 7 15 VD 20 (V) 2006-11-06 TA4800AF Package Dimensions HSIP5-P-1.27B Unit : mm 1.5±0.2 0.7±0.1 0.8max 0.5±0.1 0.5±0.1 0.6max 2.3±0.2 0.7max 1.1±0.2 0.1±0.1 0.6±0.1 0.6max 9.5±0.3 5.5±0.2 1.5±0.2 6.5±0.2 5.2±0.2 1.27 Weight: 0.36 g (Typ.) 8 2006-11-06 TA4800AF RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2006-11-06