TLP3111 TOSHIBA Photocoupler GaAs Ired & Photo−MOS FET TLP3111 Measurement Instruments Logic IC Testers / Memory Testers Board Testers / Scanners Unit in mm The TOSHIBA mini flat photo relay TLP3111 is a small outline photo relay, suitable for surface mount assembly. The TLP3111 consists of a GaAs infrared emitting diode optically coupled to a photo−MOSFET in a 4 pin lead package (MFSOP6), and has characteristics of small off−state current and small output terminal capacitance, which enable the TLP3111 to be applied to measurement instruments.(especially to high−frequency measurements) · 1−form−A · Peak off−state voltage: 80V(min.) · Trigger LED current: 4mA(max.) · On−state current: 100mA(max.) · On−state resistance: 20Ω(max.) · Isolation voltage: 1500Vrms(min.) JEDEC ― EIAJ ― TOSHIBA Pin Configurations (top view) 11−4C3 Weight: 0.1 g 1 6 3 4 1 : Anode 3 : Cathode 4 : Drain 6 : Drain 1 2002-09-25 TLP3111 Maximum Ratings (Ta = 25°C) LED Characteristic Symbol Rating Unit Forward current IF 50 mA Reverse voltage VR 6 V Junction temperature Tj 125 °C VOFF 80 V ION 100 mA Tj 125 °C Storage temperature Tstg -40~125 °C Operating temperature Topr -20~85 °C Lead solder temperature (10 s) Tsol 260 °C BVS 1500 Vrms Detector Off-state output voltage On-state current Junction temperature Isolation voltage (AC, 1 min., R.H.≤ 60%) (Note 1) (Note 1): Device considered a two-terminal device: Pins 1 and 3 shorted together, and pins 4 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VOFF ― ― 64 V Forward current IF 10 ― 30 mA On-state current ION ― ― 100 mA Operating temperature Topr 25 ― 50 °C Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 20 mA 1.0 1.2 1.4 V Reverse voltage IR VR = 6 V — — 10 µA Capacitance CT V = 0, f = 1 MHz — 15 — pF Off-state current IOFF VOFF = 30 V, Ta = 50°C — 0.05 1 nA Capacitance COFF V = 0, f = 1 MHz — 11 15 pF MIn. Typ. Max. Unit ION = 100 mA — — 4 mA ION = 100 mA, IF = 5 mA — 16 20 Ω Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Trigger LED current IFT On-state resistance RON Test Condition 2 2002-09-25 TLP3111 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance input to output CS Isolation resistance RS Test Condition VS = 0 V, f = 1 MHz BVS Typ. Max. Unit — 0.8 — pF — Ω 10 VS = 500 V, R.H. ≤ 60% 5×10 AC, 1 minute Isolation voltage Min. 14 10 1500 — — AC, 1 second (in oil) — 3000 — DC, 1 minute (in oil) — 3000 — Vdc Min. Typ. Max. Unit — — 1 — — 1 Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Turn-on time tON Turn-off time tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 10 mA (Note2) ms (Note2): Switching time test circuit VDD IF IF 1 6 3 4 RL VOUT 90% VOUT 10% tON 3 tOFF 2002-09-25 TLP3111 IFT – Ta IOFF – VOFF (pA) 100 4.00 Off-State current IOFF Trigger LED current IFT (mA) 5.00 3.00 2.00 1.00 0.00 −20 −5 10 25 40 55 70 10 1 0.1 0 85 Ambient temperature Ta (°C) 20 40 60 Off-state output voltage VOFF (V) COFF – VOFF Output terminal capacitance COFF (pF) 10.00 8.00 6.00 4.00 2.00 0.00 0 10 20 30 40 Off-state output voltage VOFF (V) 4 2002-09-25 TLP3111 RESTRICTIONS ON PRODUCT USE 000707EBC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2002-09-25