SB170 - SB1100 NEW PRODUCT 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features · · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 25A Peak For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application High Temperature Soldering: 260°C/10 Second at Terminal Plastic Material: UL Flammability Classification Rating 94V-0 B A · · · · C D Mechanical Data · · A DO-41 Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.3 grams (approx.) Mounting Position: Any Marking: Type Number Dim Min Max A 25.4 ¾ B 4.1 5.2 C 0.71 0.86 D 2.0 2.7 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Symbol SB170 SB180 SB190 SB1100 Unit VRRM VRWM VR 70 80 90 100 V VR(RMS) 49 56 63 70 V IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 25 A Forward Voltage @ IF = 1.0A @ TA = 25°C VFM 0.80 V Peak Reverse Current at Rated DC Blocking Voltage @ TA = 25°C @ TA = 100°C IRM 0.5 10 mA Average Rectified Output Current @ TT = 85°C Cj 80 pF Typical Thermal Resistance Junction to Lead RqJL 15 K/W Typical Thermal Resistance Junction to Ambient (Note 1) RqJA 50 K/W Tj, TSTG -65 to +125 °C Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. DS30116 Rev. B-1 1 of 2 SB170 - SB1100 IF, INSTANTANEOUS FORWARD CURRENT (A) I(O), AVERAGE FORWARD CURRENT (A) 0.5 0 25 50 75 100 125 150 10 1.0 Tj = 25°C IF Pulse Width = 300µs 0.1 0.1 TL, LEAD TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 0.5 0.9 1.3 1.7 2.1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 40 1000 Single Half Sine-Wave (JEDEC Method) Cj, JUNCTION CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) NEW PRODUCT 1.0 20 Tj = 150°C 30 20 10 Tj = 25°C f = 1.0MHz 100 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current DS30116 Rev. B-1 2 of 2 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance SB170 - SB1100