SB1245 Ultra Low VF Schottky Barrier Rectifier This device is designed for low voltage, high frequency inverters, free-wheeling and polarity protection applications. This is also designed as bypass diode for solar modules. Features • • • • • UL Flammability Classification 94V-O Environment Standards MIL-S-19500/228 Compliant Low Power Loss, High Efficiency High Surge Capacity Pb-free, RoHS Compliant Absolute Maximum Ratings * Symbol DO-201AD COLOR BAND DENOTES CATHODE TA = 25°C unless otherwise noted Parameter VRRM Maximum Recurrent Peak Reverse Voltage VRMS Value Units 45 V Maximum RMS Voltage 31 V VDC Maximum DC Blocking Voltage 45 V IF(AV) Maximum Average Forward Current 12 A IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed on Rated Load (JEDEC Method) 150 A VF Maximum Forward Voltage at IF=12A 0.55 V IR Maximum DC Reverse Current at Rated VDC 0.1 10 mA I2t Rating for Fusing ( t<8.3ms ) 3.7 A2sec TJ Operating Junction Temperature Range In DC Forward Mode -55 to +150 -55 to +200 °C Storage Temperature Range -55 to +175 °C TSTG TJ=25°C TJ=100°C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units RθJC Typical Thermal Resistance, Junction to Case 10 °C/W RθJL Typical Thermal Resistance, Junction to Lead 2.0 °C/W © 2009 Fairchild Semiconductor Corporation SB1245 Rev. A1 www.fairchildsemi.com 1 SB1245 — Ultra Low VF Schottky Barrier Rectifier September 2009 100 20 o 16 TJ=150 C o TJ=100 C 1 IR- Reverse Current [mA] IF(AV)- Average Forward Current [A] 10 12 8 4 o 0.1 TJ=85 C 0.01 1E-3 o TJ=25 C 1E-4 1E-5 o TJ= -40 C 1E-6 1E-7 0 0 50 100 5 150 10 15 o 20 25 30 35 40 45 VR- Reverse Voltage [V] Case Temperature [ C] Figure 1. Forward Current Derating Curve Figure 2. Reverse Current vs. Reverse Voltage 100 100 10 o TJ=125 C 10 IF- Forward Current [A] IR- Instantaneous Reverse Current [mA] o TJ=150 C o TJ=100 C 1 o TJ=75 C 0.1 0.01 o TA=100 C 1 o TA=25 C 0.1 o TA= -40 C o TJ=25 C 1E-3 0 20 40 60 80 100 120 140 0.01 0.0 0.2 0.4 0.6 0.8 1.0 VF- Forward Voltage [V] Percent of Rated Reverse Voltage [%] Figure 3. Typical Reverse Characteristics Figure 4. Forward Voltage vs. Forward Current CJ- Total Capacitance [pF] 10000 1000 100 10 0.1 1 10 100 VR - Reverse Voltage [V] Figure 5. Typical Junction Capacitance © 2009 Fairchild Semiconductor Corporation SB1245 Rev. A1 www.fairchildsemi.com SB1245 — Ultra Low VF Schottky Barrier Rectifier Typical Performance Characteristics SB1245 — Ultra Low VF Schottky Barrier Rectifier Physical Dimensions © 2009 Fairchild Semiconductor Corporation SB1245 Rev. A1 www.fairchildsemi.com 3 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com