BAS40SL Schottky Barrier Diodes Features • • • • Low Forward Voltage Drop Fast switching Very Small and Thin SMD package Profile height, 0.43mm max • Footprint, 1.0 x 0.6mm Connection Diagram 1 2 2 SOD-923F Marking: AA Absolute Maximum Ratings * Symbol 1 TA = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 40 V IF(AV) Average Rectified Forward Current 100 mA IFSM Forward Surge Current (8.3mS Single Half Sine-Wave) 600 mA Power Dissipation 227 mW -55 to +150 °C PD TJ, TSTG Operating Junction & Storage Temperature Range * These ratings are limiting values above which the serviceability of the diode may be impaired. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter RθJA Thermal Resistance, Junction to Ambient * * Minimum land pad. Electrical Characteristics Symbol Parameter Value Unit 550 °C/W TA = 25°C unless otherwise noted Test Conditions Min. Max. 40 Unit VR Breakdown Voltage IR = 10μA VF Forward Voltage IF = 1mA IF = 40mA 380 1000 mV mV IR Reverse Leakage VR = 30V 0.2 μA trr Reverse Recovery Time IF = IR= 10mA, irr = 0.1IR 8.0 nS Cj Junction Capacitance 5.0 pF VR = 0, f = 1.0MHz © 2010 Fairchild Semiconductor Corporation BAS40SL Rev. A2 V www.fairchildsemi.com 1 BAS40SL — Schottky Barrier Diodes October 2010 BAS40SL — Schottky Barrier Diodes Typical Performance Characteristics Figure 1. Forward Current Characteristics Figure 2. Reverse Leakage Current 100 100000 o o Reverse Current, IR[nA] Forward Current, IF[mA] TJ=150 C o TJ=85 C o TJ=25 C 10 1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 TJ=150 C 10000 1000 o TJ=85 C 100 o 10 TJ=25 C 1 10 1.0 20 Forward Voltage Drop, VF[V] 30 40 Reverse Voltage, VR[V] Figure 3. Junction Capacitance Figure 4. Power Derating 5 300 250 Power Dissipation, [mW] Juntion Capacitance, CJ[pF] f=1mhz 4 3 2 150 100 50 0 1 0 2 4 6 8 0 10 25 50 75 100 125 150 o Reverse Voltage, VR[V] Ambient Temperature, Ta[ C] © 2010 Fairchild Semiconductor Corporation BAS40SL Rev. A2 200 www.fairchildsemi.com 2 BAS40SL — Schottky Barrier Diodes Physical Dimensions SOD-923F 0.90 - 1.10 0.27 0.17 A 0.82 0.75 - 0.85 B 0.32 0.55 - 0.65 0.08 A B 2X 0.28 0.05 - 0.15 TOP VIEW LAND PATTERN RECOMMENDATION 0.43 Max 0.39 - 0.41 0.08 - 0.14 0.05 0.00 SEATING PLANE END VIEW SIDE VIEW 0.26 0.10 0.15 0.05 BOTTOM VIEW NOTES: A) THIS PACKAGE DOES NOT COMPLY TO ANY CURRENT PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) BODY DIMENSIONS ARE INCLUSIVE OF BURRS, AND MOLD FLASH. D) DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 E) LANDPATTERN BASED ON NOMINAL PACKAGE DIMENSIONS. F) DRAWING FILE NAME : SOD923F1REV2 Dimensions in Millimeters © 2010 Fairchild Semiconductor Corporation BAS40SL Rev. 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