DIODES MBR4045PT

MBR4030PT - MBR4060PT
40A SCHOTTKY BARRIER RECTIFIER
Features
·
·
·
·
·
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
TO-3P
H
·
·
·
·
J
S
P*
*2 Places
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Marking: Type Number
Weight: 5.6 grams (approx.)
Mounting Position: Any
C
K
R
Mechanical Data
·
·
A
B
L
Q
G
N
D
E
M
M
Dim
Min
Max
A
3.20
3.50
B
4.59
5.16
C
20.80
21.30
D
19.70
20.20
E
2.10
2.40
G
0.51
0.76
H
15.90
16.40
J
1.70
2.70
K
3.10Æ
3.30Æ
L
3.50
4.51
M
5.20
5.70
N
1.12
1.22
P
1.93
2.18
Q
2.97
3.22
R
11.70
12.80
4.30 Typical
S
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TC = 125°C
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop
Symbol
MBR
4030PT
MBR
4035PT
MBR
4040PT
MBR
4045PT
MBR
4O50PT
MBR
4060PT
Unit
VRRM
VRWM
VR
30
35
40
45
50
60
V
VR(RMS)
21
24.5
28
31.5
35
42
V
IO
40
A
IFSM
400
A
@ IF = 20A, TC = 25°C
@ IF = 20A, TC = 125°C
VFM
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 25°C
@ TC = 125°C
IRM
1.0
100
mA
Typical Junction Capacitance
(Note 2)
Cj
1100
pF
Typical Thermal Resistance Junction to Case
(Note 1)
Voltage Rate of Change (Rated VR)
Operating and Storage Temperature Range
Notes:
0.70
0.60
0.80
0.70
V
RqJc
1.4
K/W
dV/dt
10,000
V/ms
Tj, TSTG
-65 to +150
°C
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS23019 Rev. E-2
1 of 2
MBR4030PT - MBR4060PT
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FWD CURRENT (A)
50
40
30
20
10
0
0
50
100
100
MBR 4030PT - MBR4045PT
10
1.0
0.1
150
4000
8.3 ms Single half
sine-wave (JEDEC method)
Cj, CAPACITANCE (pF)
IFSM, PEAK FWD SURGE CURRENT (A)
0.9
0.8
0.3
0.4
0.6
0.7
0.5
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
0.2
TC, CASE TEMPERATURE (°C)
Fig. 1 Fwd Current Derating Curve
400
MBR4050PT - MBR4060PT
300
200
TJ = 25°C
f = 1 Mhz
1000
100
100
1
0.1
100
10
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (µA)
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
10
TC = 125°C
1.0
0.1
TC = 75°C
TC = 25°C
0.01
Tj = 25°C
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS23019 Rev. E-2
2 of 2
MBR4030PT - MBR4060PT