DIODES SBL1050CT

SBL1030CT - SBL1060CT
10A SCHOTTKY BARRIER RECTIFIER
Features
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Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
TO-220AB
L
B
C
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D
K
A
1
2
3
E
Mechanical Data
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M
J
G
N
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Marking: Type Number
Weight: 2.24 grams (approx.)
Mounting Position: Any
H H
P
Pin 1
Pin 2
Pin 3
Case
Dim
Min
Max
A
14.22
15.88
B
9.65
10.67
C
2.54
3.43
D
5.84
6.86
E
¾
6.35
G
12.70
14.73
H
2.29
2.79
J
0.51
1.14
K
3.53Æ
4.09Æ
L
3.56
4.83
M
1.14
1.40
N
0.30
0.64
P
2.03
2.92
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SBL
Symbol 1030CT
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TC = 95°C
(Note 1)
SBL
1035CT
SBL
1040CT
SBL
1045CT
SBL
1050CT
SBL
1060CT
Unit
VRRM
VRWM
VR
30
35
40
45
50
60
V
VR(RMS)
21
24.5
28
31.5
35
42
V
IO
10
A
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
175
A
Forward Voltage Drop
VFM
@ IF = 5.0A, TC = 25°C
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 25°C
@ TC = 125°C
Typical Junction Capacitance
(Note 2)
Typical Thermal Resistance Junction to Case
(Note 1)
Operating and Storage Temperature Range
Notes:
0.55
0.70
V
IRM
0.5
50
mA
Cj
450
pF
RqJc
5.5
°C/W
Tj, TSTG
-65 to +150
°C
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS23048 Rev. C-2
1 of 2
SBL1030CT - SBL1060CT
16
12
8
4
0
100
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD CURRENT (A)
20
0
50
100
SBL1030CT - SBL10450CT
10
SBL1050CT - SBL1060CT
1.0
0.1
0.2
150
0.4
0.6
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics per Element
4000
8.3ms single half-sine-wave
JEDEC method
Tj = 25°C
250
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
300
Tj = 25°C
Pulse width = 300µs
2% duty cycle
200
150
100
1000
50
0
100
1
0.1
100
10
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance per Element
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (mA)
1.0
10
TC = 125°C
1.0
TC = 75°C
0.1
TC = 25°C
0.01
0.001
0
40
80
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS23048 Rev. C-2
2 of 2
SBL1030CT - SBL1060CT