Am29DS323D Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. Please contact a Spansion representative for alternates. The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal data sheet improvement and are noted in the document revision summary. For More Information Please contact your local sales office for additional information about Spansion memory solutions. Publication Number 23480 Revision A Amendment 5 Issue Date October 10, 2006 THIS PAGE LEFT INTENTIONALLY BLANK. DATA SHEET Am29DS323D 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory This product has been retired and is not recommended for designs. Please contact a Spansion representative for alternates. DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES ■ Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in other bank — Zero latency between read and write operations ■ 20 Year data retention at 125°C — Reliable operation for the life of the system ■ Multiple bank architectures — Two devices available with different bank sizes (refer to Table 3) ■ Secured Silicon (Secured Silicon) Sector — Factory locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; verifiable as factory locked through autoselect function. ExpressFlash option allows entire sector to be available for factory-secured data — Customer lockable: Can be read, programmed, or erased just like other sectors. Once locked, data cannot be changed — 64 Kbyte sector size ■ Zero Power Operation — Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero SOFTWARE FEATURES ■ Data Management Software (DMS) — AMD-supplied software manages data programming and erasing, enabling EEPROM emulation — Eases sector erase limitations ■ Supports Common Flash Memory Interface (CFI) ■ Erase Suspend/Erase Resume — Suspends erase operations to allow programming in same bank ■ Data# Polling and Toggle Bits — Provides a software method of detecting the status of program or erase cycles ■ Unlock Bypass Program command — Reduces overall programming time when issuing multiple program command sequences HARDWARE FEATURES ■ Any combination of sectors can be erased ■ Package options — 48-ball FBGA — 48-pin TSOP ■ Ready/Busy# output (RY/BY#) — Hardware method for detecting program or erase cycle completion ■ Top or bottom boot block ■ Hardware reset pin (RESET#) — Hardware method of resetting the internal state machine to reading array data ■ Manufactured on 0.23 µm process technology ■ Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash standard PERFORMANCE CHARACTERISTICS ■ High performance — Access time as fast 110 ns — Program time: 13 µs/word typical; with Accelerate function, 7 µs/word typical ■ Ultra low power consumption (typical values) — 1 mA active read current at 1 MHz — 5 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode ■ WP#/ACC input pin — Write protect (WP#) function allows protection of two outermost boot sectors, regardless of sector protect status — Acceleration (ACC) function provides accelerated program times ■ Sector protection — Hardware method of locking a sector, either in-system or using programming equipment, to prevent any program or erase operation within that sector — Temporary Sector Unprotect allows changing data in protected sectors in-system This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Publication# 23480 Rev: A Amendment: 5 Issue Date: October 10, 2006 D A T A S H E E T GENERAL DESCRIPTION The Am29DS323D family consists of 32 megabit, 1.8 volt-only flash memor y devices, organ ized a s 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on DQ0–DQ15; byte mode data appears on DQ0–DQ7. The device is designed to be programmed in-system with the standard 1.8 volt VCC supply, and can also be programmed in standard EPROM programmers. The device is available with an access time of 110 and 120 ns. The devices are offered in an 48-ball FBGA package. Standard control pins—chip enable (CE#), write enable (WE#), and output enable (OE#)—control normal read and write operations, and avoid bus contention issues. The device requires only a single 1.8 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. Simultaneous Read/Write Operations with Zero Latency The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into two banks. The device can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from the other bank, with zero latency. This releases the system from waiting for the completion of program or erase operations. Am29DS323D Features The Secured Silicon (SecSi) Sector is an additional 64 Kbyte sector capable of being permanently locked by AMD or customers. The Secured Silicon Sector Indicator Bit (DQ7) is permanently set to a 1 if the part is factory locked, and set to a 0 if customer lockable. This way, customer lockable parts can never be used to replace a factory locked part. Factory locked parts provide several options. The Secured Silicon Sector may store a secure, random 16 byte ESN (Electronic Serial Number), customer code (programmed through AMD’s ExpressFlash service), or both. Customer Lockable parts may utilize the Secured Silicon Sector as bonus space, reading and writing like any other flash sector, or may permanently lock their own code there. DMS (Data Management Software) allows systems to easily take advantage of the advanced architecture of the simultaneous read/write product line by allowing 2 removal of EEPROM devices. DMS will also allow the system software to be simplified, as it will perform all functions necessary to modify data in file structures, as opposed to single-byte modifications. To write or update a particular piece of data (a phone number or configuration data, for example), the user only needs to state which piece of data is to be updated, and where the updated data is located in the system. This i s a n a d va n t a g e c o m p a r e d t o s y s t e m s w h e r e user-written software must keep track of the old data location, status, logical to physical translation of the data onto the Flash memory device (or memory devices), and more. Using DMS, user-written software does not need to interface with the Flash memory directly. Instead, the user's software accesses the Flash memory by calling one of only six functions. AMD provides this software to simplify system design and software integration efforts. The device offers complete compatibility with the JEDEC single-power-supply Flash command set standard. Commands are written to the command register using standard microprocessor write timings. Reading data out of the device is similar to reading from other Flash or EPROM devices. The host system can detect whether a program or erase operation is complete by using the device status bits: RY/BY# pin, DQ7 (Data# Polling) and DQ6/DQ2 (toggle bits). After a program or erase cycle has been completed, the device automatically returns to reading array data. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memo r y. T h i s c a n b e a c h i ev e d i n - s y s t e m o r v i a programming equipment. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both modes. Am29DS323D 23480A5 October 10, 2006 D A T A S H E E T TABLE OF CONTENTS Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5 Special Handling Instructions for FBGA Package .................... 6 Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8 Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 9 Chip Erase Command Sequence ........................................... 26 Sector Erase Command Sequence ........................................ 26 Erase Suspend/Erase Resume Commands ........................... 27 Figure 4. Erase Operation.............................................................. 27 Command Definitions ............................................................. 28 Table 14. Am29DS323D Command Definitions.............................. 28 Write Operation Status . . . . . . . . . . . . . . . . . . . . 29 DQ7: Data# Polling ................................................................. 29 Table 1. Am29DS323D Device Bus Operations ...............................9 Figure 5. Data# Polling Algorithm .................................................. 29 Word/Byte Configuration .......................................................... 9 Requirements for Reading Array Data ..................................... 9 Writing Commands/Command Sequences ............................ 10 RY/BY#: Ready/Busy# ............................................................ 30 DQ6: Toggle Bit I .................................................................... 30 Accelerated Program Operation ......................................................10 Autoselect Functions .......................................................................10 Simultaneous Read/Write Operations with Zero Latency ....... 10 Standby Mode ........................................................................ 10 Automatic Sleep Mode ........................................................... 10 RESET#: Hardware Reset Pin ............................................... 11 Output Disable Mode .............................................................. 11 Table 2. Am29DS323D Device Bank Divisions ...............................11 Table 3. Top Boot Sector Addresses (Am29DS32xDT) ..................12 Table 4. Secured Silicon Sector Addresses for Top Boot Devices . 13 Table 5. Bottom Boot Sector Addresses (Am29DS32xDB) ............14 Table 6. Secured Silicon Sector Addresses for Bottom Boot Devices 15 Figure 6. Toggle Bit Algorithm........................................................ 30 DQ2: Toggle Bit II ................................................................... 31 Reading Toggle Bits DQ6/DQ2 ............................................... 31 DQ5: Exceeded Timing Limits ................................................ 31 DQ3: Sector Erase Timer ....................................................... 31 Table 15. Write Operation Status ................................................... 32 Absolute Maximum Ratings . . . . . . . . . . . . . . . . 33 Figure 7. Maximum Negative Overshoot Waveform ..................... 33 Figure 8. Maximum Positive Overshoot Waveform....................... 33 Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 33 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 34 Figure 9. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) ............................................................. 35 Figure 10. Typical ICC1 vs. Frequency ............................................ 35 Autoselect Mode ..................................................................... 16 Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Table 7. Am29DS323D Autoselect Codes (High Voltage Method) 16 Figure 11. Test Setup.................................................................... 36 Table 16. Test Specifications ......................................................... 36 Figure 12. Input Waveforms and Measurement Levels ................. 36 Sector/Sector Block Protection and Unprotection .................. 17 Table 8. Top Boot Sector/Sector Block Addresses for Protection/Unprotection .............................................................17 Table 9. Bottom Boot Sector/Sector Block Addresses for Protection/Unprotection ...........................................17 Write Protect (WP#) ................................................................ 18 Temporary Sector/Sector Block Unprotect ............................. 18 Figure 1. Temporary Sector Unprotect Operation........................... 18 Figure 2. In-System Sector/Sector Block Protect and Unprotect Algorithms................................................................ 19 Secured Silicon Sector Flash Memory Region ....................... 20 Hardware Data Protection ...................................................... 20 Low VCC Write Inhibit .....................................................................21 Write Pulse “Glitch” Protection ........................................................21 Logical Inhibit ..................................................................................21 Power-Up Write Inhibit ....................................................................21 Common Flash Memory Interface (CFI) . . . . . . . 21 Table 10. CFI Query Identification String ........................................ 21 Table 11. System Interface String................................................... 22 Table 12. Device Geometry Definition ............................................ 22 Table 13. Primary Vendor-Specific Extended Query ...................... 23 Command Definitions . . . . . . . . . . . . . . . . . . . . . . 24 Reading Array Data ................................................................ 24 Reset Command ..................................................................... 24 Autoselect Command Sequence ............................................ 24 Enter Secured Silicon Sector/Exit Secured Silicon Sector Command Sequence .............................................................. 25 Byte/Word Program Command Sequence ............................. 25 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 37 Figure 13. Read Operation Timings ............................................... 37 Figure 14. Reset Timings ............................................................... 38 Word/Byte Configuration (BYTE#) .......................................... 39 Figure 15. BYTE# Timings for Read Operations............................ 39 Figure 16. BYTE# Timings for Write Operations............................ 39 Erase and Program Operations .............................................. 40 Figure 17. Program Operation Timings.......................................... Figure 18. Accelerated Program Timing Diagram.......................... Figure 19. Chip/Sector Erase Operation Timings .......................... Figure 20. Back-to-back Read/Write Cycle Timings ...................... Figure 21. Data# Polling Timings (During Embedded Algorithms). Figure 22. Toggle Bit Timings (During Embedded Algorithms)...... Figure 23. DQ2 vs. DQ6................................................................. Figure 24. Temporary Sector/Sector Block Unprotect Timing Diagram ............................................................. Figure 25. Sector/Sector Block Protect/Unprotect Timing Diagram Figure 26. Alternate CE# Controlled Write (Erase/Program) Operation Timings .............................................. 41 41 42 43 44 45 45 46 47 49 Erase And Programming Performance . . . . . . . 50 Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 50 Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 FBD048—48-ball Fine-Pitch Ball Grid Array (FBGA) 6 x 12 mm package ................................................................ 51 TS 048—48-Pin Standard TSOP ............................................ 52 Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 53 Unlock Bypass Command Sequence ..............................................25 Figure 3. Program Operation .......................................................... 26 October 10, 2006 23480A5 Am29DS323D 3 D A T A S H E E T PRODUCT SELECTOR GUIDE Part Number Speed Option Am29DS323D Standard Voltage Range: VCC = 1.8–2.2 V 110 120 Max Access Time (ns) 110 120 CE# Access (ns) 110 120 OE# Access (ns) 50 50 BLOCK DIAGRAM RY/BY# X-Decoder A0–A20 WE# CE# BYTE# WP#/ACC STATE CONTROL & COMMAND REGISTER Status DQ0–DQ15 Control DQ0–DQ15 Lower Bank Address Lower Bank Latches and Control Logic A0–A20 Y-Decoder A0–A20 X-Decoder DQ0–DQ15 RESET# Upper Bank DQ0–DQ15 A0–A20 Y-Decoder Upper Bank Address A0–A20 Latches and Control Logic OE# BYTE# VCC VSS OE# BYTE# 4 Am29DS323D 23480A5 October 10, 2006 D A T A S H E E T CONNECTION DIAGRAMS A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE# RESET# NC WP#/ACC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 October 10, 2006 23480A5 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48-Pin Standard TSOP Am29DS323D 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 5 D A T A S H E E T CONNECTION DIAGRAMS 48-Ball FBGA Top View, Balls Facing Down A6 B6 C6 D6 E6 A13 A12 A14 A15 A16 A5 B5 C5 D5 E5 F5 G5 H5 A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6 A4 B4 C4 D4 E4 F4 G4 H4 WE# RESET# NC A19 DQ5 DQ12 VCC DQ4 A3 B3 C3 D3 E3 F3 G3 H3 A18 A20 DQ2 DQ10 DQ11 DQ3 RY/BY# WP#/ACC G6 BYTE# DQ15/A-1 H6 VSS A2 B2 C2 D2 E2 F2 G2 H2 A7 A17 A6 A5 DQ0 DQ8 DQ9 DQ1 A1 B1 C1 D1 E1 F1 G1 H1 A3 A4 A2 A1 A0 CE# OE# VSS Special Handling Instructions for FBGA Package Special handling is required for Flash Memory products in FBGA packages. 6 F6 Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time. Am29DS323D 23480A5 October 10, 2006 D A T A PIN DESCRIPTION A0–A20 S H E E T LOGIC SYMBOL = 21 Addresses 21 DQ0–DQ14 = 15 Data Inputs/Outputs A0–A20 DQ15/A-1 = DQ15 (Data Input/Output, word mode), A-1 (LSB Address Input, byte mode) CE# = Chip Enable OE# = Output Enable WE# = Write Enable WP#/ACC = Hardware Write Protect/ Acceleration Pin RESET# RESET# = Hardware Reset Pin, Active Low BYTE# BYTE# = Selects 8-bit or 16-bit mode RY/BY# = Ready/Busy Output VCC = 1.8 volt-only single power supply (see Product Selector Guide for speed options and voltage supply tolerances) VSS = Device Ground NC = Pin Not Connected Internally October 10, 2006 23480A5 16 or 8 DQ0–DQ15 (A-1) CE# OE# WE# WP#/ACC Am29DS323D RY/BY# 7 D A T A S H E E T ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: Am29DS323D T 110 WM I OPTIONAL PROCESSING Blank = Standard Processing N = 16-byte ESN devices (Contact an AMD representative for more information) TEMPERATURE RANGE I = Industrial (–40°C to +85°C) PACKAGE TYPE E = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 048) WM = 48-Ball Fine-Pitch Ball Grid Array (FBGA) 0.80 mm pitch, 6 x 12 mm package (FBD048) SPEED OPTION See Product Selector Guide and Valid Combinations BOOT CODE SECTOR ARCHITECTURE T = Top sector B = Bottom sector DEVICE NUMBER/DESCRIPTION Am29DS323D 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS Flash Memory 1.8 Volt-only Read, Program, and Erase Valid Combinations for TSOP Packages Valid Combinations for FBGA Packages Order Number Order Number Am29DS323DT110, Am29DS323DB110 Am29DS323DT110, Am29DS323DB110 EI Am29DS323DT120, Am29DS323DB120 Package Marking S323DT11U, S323DB11U WMI Am29DS323DT120, Am29DS323DB120 I S323DT12U, S323DB12U Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. 8 Am29DS323D 23480A5 October 10, 2006 D A T A S H E E T DEVICE BUS OPERATIONS the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. The contents of Table 1. Am29DS323D Device Bus Operations DQ8–DQ15 Operation Addresses (Note 2) CE# OE# WE# RESET# WP#/ACC DQ0– BYTE# DQ7 = VIH BYTE# = VIL Read L L H H L/H AIN DOUT Write L H L H (Note 3) AIN DIN VCC ± 0.3 V X X VCC ± 0.3 V H X High-Z High-Z High-Z Output Disable L H H H L/H X High-Z High-Z High-Z Reset X X X L L/H X High-Z High-Z High-Z Sector Protect (Note 2) L H L VID L/H SA, A6 = L, A1 = H, A0 = L DIN X X Sector Unprotect (Note 2) L H L VID (Note 3) SA, A6 = H, A1 = H, A0 = L DIN X X Temporary Sector Unprotect X X X VID (Note 3) AIN DIN DIN High-Z Standby DOUT DQ8–DQ14 = High-Z, DQ15 = A-1 D IN Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 9.0–11.0 V, VHH = 9.0 ± 0.5 V, X = Don’t Care, SA = Sector Address, AIN = Address In, DIN = Data In, DOUT = Data Out Notes: 1. Addresses are A20:A0 in word mode (BYTE# = VIH), A20:A-1 in byte mode (BYTE# = VIL). 2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector Block Protection and Unprotection” section. 3. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, the two outermost boot sector protection depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and Unprotection”. If WP#/ACC = VHH, all sectors will be unprotected. Word/Byte Configuration Requirements for Reading Array Data The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ0–DQ15 are active and controlled by CE# and OE#. To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the device. OE# is the output control and gates array data to the output pins. WE# should remain at V IH . The BYTE# pin determines whether the device outputs array data in words or bytes. If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins DQ0–DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8–DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function. October 10, 2006 23480A5 The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid Am29DS323D 9 D A T A addresses on the device address inputs produce valid data on the device data outputs. Each bank remains enabled for read access until the command register contents are altered. See “Requirements for Reading Array Data” for more information. Refer to the AC Memory Array Read-Only Operations table for timing specifications and to Figure 13 for the timing diagram. ICC1 in the DC Characteristics table represents the active current specification for reading array data. Writing Commands/Command Sequences To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH. For program operations, the BYTE# pin determines whether the device accepts program data in bytes or words. Refer to “Word/Byte Configuration” for more information. The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. The “Word/Byte Configuration” section has details on programming data to the device using both standard and Unlock Bypass command sequences. An erase operation can erase one sector, multiple sectors, or the entire device. Tables 3–6 indicate the address space that each sector occupies. The device address space is divided into two banks: Bank 1 contains the boot/parameter sectors, and Bank 2 contains the larger, code sectors of uniform size. A “bank address” is the address bits required to uniquely select a bank. Similarly, a “sector address” is the address bits required to uniquely select a sector. ICC2 in the DC Characteristics table represents the active current specification for the write mode. The AC Characteristics section contains timing specification tables and timing diagrams for write operations. Accelerated Program Operation The device offers accelerated program operations through the ACC function. This is one of two functions provided by the WP#/ACC pin. This function is primarily intended to allow faster manufacturing throughput at the factory. If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for program operations. The system would use a two-cycle program command sequence as required by the Unlock Bypass mode. Removing 10 S H E E T VHH from the WP#/ACC pin returns the device to normal operation. Note that the WP#/ACC pin must not be at VHH for operations other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. Autoselect Functions If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ7–DQ0. Standard read cycle timings apply in this mode. Refer to the Autoselect Mode and Autosel e c t C o m m a n d S e q u e n c e s e c t i o n s fo r m o r e information. Simultaneous Read/Write Operations with Zero Latency This device is capable of reading data from one bank of memory while programming or erasing in the other bank of memory. An erase operation may also be suspended to read from or program to another location within the same bank (except the sector being erased). Figure 20 shows how read and write cycles may be initiated for simultaneous operation with zero latency. ICC6 and ICC7 in the DC Characteristics table represent the current specifications for read-while-program and read-while-erase, respectively. Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC ± 0.3 V. (Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within VCC ± 0.3 V, the device will be in the standby mode, but the standby current will be greater. The device requires standard access time (t CE ) for read access when the device is in either of these standby modes, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. I CC3 in the DC Characteristics table represents the standby current specification. Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for t ACC + Am29DS323D 23480A5 October 10, 2006 D A T A S H E E T 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard add r es s a c c e s s tim in g s pr ovi d e n ew d a t a w h e n addresses are changed. While in sleep mode, output data is latched and always available to the system. I CC4 in the DC Characteristics table represents the automatic sleep mode current specification. RESET#: Hardware Reset Pin The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS±0.3 V, the device draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS±0.3 V, the standby current will be greater. Table 2. Device Part Number The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is “1”), the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data t RH after the RESET# pin returns to VIH. Refer to the AC Characteristics tables for RESET# parameters and to Figure 14 for the timing diagram. Output Disable Mode When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state. Am29DS323D Device Bank Divisions Bank 1 Bank 2 Megabits Sector Sizes Megabits Sector Sizes 8 Mbit Eight 8 Kbyte/4 Kword, fifteen 64 Kbyte/32 Kword 24 Mbit Forty-eight 64 Kbyte/32 Kword Am29DS323D October 10, 2006 23480A5 Am29DS323D 11 D A T A S H E E T Bank 2 Am29DS323DT Table 3. Top Boot Sector Addresses (Am29DS32xDT) 12 Sector Sector Address A20–A12 Sector Size (Kbytes/Kwords) (x8) Address Range (x16) Address Range SA0 000000xxx 64/32 000000h–00FFFFh 000000h–07FFFh SA1 000001xxx 64/32 010000h–01FFFFh 008000h–0FFFFh SA2 000010xxx 64/32 020000h–02FFFFh 010000h–17FFFh SA3 000011xxx 64/32 030000h–03FFFFh 018000h–01FFFFh SA4 000100xxx 64/32 040000h–04FFFFh 020000h–027FFFh SA5 000101xxx 64/32 050000h–05FFFFh 028000h–02FFFFh SA6 000110xxx 64/32 060000h–06FFFFh 030000h–037FFFh SA7 000111xxx 64/32 070000h–07FFFFh 038000h–03FFFFh SA8 001000xxx 64/32 080000h–08FFFFh 040000h–047FFFh SA9 001001xxx 64/32 090000h–09FFFFh 048000h–04FFFFh SA10 001010xxx 64/32 0A0000h–0AFFFFh 050000h–057FFFh SA11 001011xxx 64/32 0B0000h–0BFFFFh 058000h–05FFFFh SA12 001100xxx 64/32 0C0000h–0CFFFFh 060000h–067FFFh SA13 001101xxx 64/32 0D0000h–0DFFFFh 068000h–06FFFFh SA14 001110xxx 64/32 0E0000h–0EFFFFh 070000h–077FFFh SA15 001111xxx 64/32 0F0000h–0FFFFFh 078000h–07FFFFh SA16 010000xxx 64/32 100000h–10FFFFh 080000h–087FFFh SA17 010001xxx 64/32 110000h–11FFFFh 088000h–08FFFFh SA18 010010xxx 64/32 120000h–12FFFFh 090000h–097FFFh SA19 010011xxx 64/32 130000h–13FFFFh 098000h–09FFFFh SA20 010100xxx 64/32 140000h–14FFFFh 0A0000h–0A7FFFh SA21 010101xxx 64/32 150000h–15FFFFh 0A8000h–0AFFFFh SA22 010110xxx 64/32 160000h–16FFFFh 0B0000h–0B7FFFh SA23 010111xxx 64/32 170000h–17FFFFh 0B8000h–0BFFFFh SA24 011000xxx 64/32 180000h–18FFFFh 0C0000h–0C7FFFh SA25 011001xxx 64/32 190000h–19FFFFh 0C8000h–0CFFFFh SA26 011010xxx 64/32 1A0000h–1AFFFFh 0D0000h–0D7FFFh SA27 011011xxx 64/32 1B0000h–1BFFFFh 0D8000h–0DFFFFh SA28 011100xxx 64/32 1C0000h–1CFFFFh 0E0000h–0E7FFFh SA29 011101xxx 64/32 1D0000h–1DFFFFh 0E8000h–0EFFFFh SA30 011110xxx 64/32 1E0000h–1EFFFFh 0F0000h–0F7FFFh SA31 011111xxx 64/32 1F0000h–1FFFFFh 0F8000h–0FFFFFh SA32 100000xxx 64/32 200000h–20FFFFh 100000h–107FFFh SA33 100001xxx 64/32 210000h–21FFFFh 108000h–10FFFFh SA34 100010xxx 64/32 220000h–22FFFFh 110000h–117FFFh SA35 100011xxx 64/32 230000h–23FFFFh 118000h–11FFFFh SA36 100100xxx 64/32 240000h–24FFFFh 120000h–127FFFh SA37 100101xxx 64/32 250000h–25FFFFh 128000h–12FFFFh SA38 100110xxx 64/32 260000h–26FFFFh 130000h–137FFFh SA39 100111xxx 64/32 270000h–27FFFFh 138000h–13FFFFh SA40 101000xxx 64/32 280000h–28FFFFh 140000h–147FFFh SA41 101001xxx 64/32 290000h–29FFFFh 148000h–14FFFFh SA42 101010xxx 64/32 2A0000h–2AFFFFh 150000h–157FFFh SA43 101011xxx 64/32 2B0000h–2BFFFFh 158000h–15FFFFh SA44 101100xxx 64/32 2C0000h–2CFFFFh 160000h–167FFFh SA45 101101xxx 64/32 2D0000h–2DFFFFh 168000h–16FFFFh SA46 101110xxx 64/32 2E0000h–2EFFFFh 170000h–177FFFh SA47 101111xxx 64/32 2F0000h–2FFFFFh 178000h–17FFFFh Am29DS323D 23480A5 October 10, 2006 D A T A Bank 1 Am29DS323DT Table 3. S H E E T Top Boot Sector Addresses (Am29DS32xDT) (Continued) Sector Sector Address A20–A12 Sector Size (Kbytes/Kwords) (x8) Address Range (x16) Address Range SA48 110000xxx 64/32 300000h–30FFFFh 180000h–187FFFh SA49 110001xxx 64/32 310000h–31FFFFh 188000h–18FFFFh SA50 110010xxx 64/32 320000h–32FFFFh 190000h–197FFFh SA51 110011xxx 64/32 330000h–33FFFFh 198000h–19FFFFh SA52 110100xxx 64/32 340000h–34FFFFh 1A0000h–1A7FFFh SA53 110101xxx 64/32 350000h–35FFFFh 1A8000h–1AFFFFh SA54 110110xxx 64/32 360000h–36FFFFh 1B0000h–1B7FFFh SA55 110111xxx 64/32 370000h–37FFFFh 1B8000h–1BFFFFh SA56 111000xxx 64/32 380000h–38FFFFh 1C0000h–1C7FFFh SA57 111001xxx 64/32 390000h–39FFFFh 1C8000h–1CFFFFh SA58 111010xxx 64/32 3A0000h–3AFFFFh 1D0000h–1D7FFFh SA59 111011xxx 64/32 3B0000h–3BFFFFh 1D8000h–1DFFFFh SA60 111100xxx 64/32 3C0000h–3CFFFFh 1E0000h–1E7FFFh SA61 111101xxx 64/32 3D0000h–3DFFFFh 1E8000h–1EFFFFh SA62 111110xxx 64/32 3E0000h–3EFFFFh 1F0000h–1F7FFFh SA63 111111000 8/4 3F0000h–3F1FFFh 1F8000h–1F8FFFh SA64 111111001 8/4 3F2000h–3F3FFFh 1F9000h–1F9FFFh SA65 111111010 8/4 3F4000h–3F5FFFh 1FA000h–1FAFFFh SA66 111111011 8/4 3F6000h–3F7FFFh 1FB000h–1FBFFFh SA67 111111100 8/4 3F8000h–3F9FFFh 1FC000h–1FCFFFh SA68 111111101 8/4 3FA000h–3FBFFFh 1FD000h–1FDFFFh SA69 111111110 8/4 3FC000h–3FDFFFh 1FE000h–1FEFFFh SA70 111111111 8/4 3FE000h–3FFFFFh 1FF000h–1FFFFFh Note: The address range is A20:A-1 in byte mode (BYTE#=VIL) or A20:A0 in word mode (BYTE#=VIH). The bank address bits are A20 and A19 for Am29DS323DT. Table 4. Secured Silicon Sector Addresses for Top Boot Devices Secured Silicon Sector Sector Address A20–A12 Size (x8) Address Range Entire Sector 111111xxx 64 Kbytes/32 Kwords 3F0000h–3FFFFFh 1F8000h–1FFFFh Factory Programmed ESN 000000xxx 16 bytes/8 words 3F0780h–3FF78Fh 1F83C0h–1F83C7h October 10, 2006 23480A5 Am29DS323D (x16) Address Range 13 D A T A Bank 2 Bank 1 Am29DS323DB Table 5. 14 S H E E T Bottom Boot Sector Addresses (Am29DS32xDB) Sector Sector Address A20–A12 Sector Size (Kbytes/Kwords) (x8) Address Range (x16) Address Range SA0 000000000 8/4 000000h-001FFFh 000000h–000FFFh SA1 000000001 8/4 002000h-003FFFh 001000h–001FFFh SA2 000000010 8/4 004000h-005FFFh 002000h–002FFFh SA3 000000011 8/4 006000h-007FFFh 003000h–003FFFh SA4 000000100 8/4 008000h-009FFFh 004000h–004FFFh SA5 000000101 8/4 00A000h-00BFFFh 005000h–005FFFh SA6 000000110 8/4 00C000h-00DFFFh 006000h–006FFFh SA7 000000111 8/4 00E000h-00FFFFh 007000h–007FFFh SA8 000001xxx 64/32 010000h-01FFFFh 008000h–00FFFFh SA9 000010xxx 64/32 020000h-02FFFFh 010000h–017FFFh SA10 000011xxx 64/32 030000h-03FFFFh 018000h–01FFFFh SA11 000100xxx 64/32 040000h-04FFFFh 020000h–027FFFh SA12 000101xxx 64/32 050000h-05FFFFh 028000h–02FFFFh SA13 000110xxx 64/32 060000h-06FFFFh 030000h–037FFFh SA14 000111xxx 64/32 070000h-07FFFFh 038000h–03FFFFh SA15 001000xxx 64/32 080000h-08FFFFh 040000h–047FFFh SA16 001001xxx 64/32 090000h-09FFFFh 048000h–04FFFFh SA17 001010xxx 64/32 0A0000h-0AFFFFh 050000h–057FFFh SA18 001011xxx 64/32 0B0000h-0BFFFFh 058000h–05FFFFh SA19 001100xxx 64/32 0C0000h-0CFFFFh 060000h–067FFFh SA20 001101xxx 64/32 0D0000h-0DFFFFh 068000h–06FFFFh SA21 001110xxx 64/32 0E0000h-0EFFFFh 070000h–077FFFh SA22 001111xxx 64/32 0F0000h-0FFFFFh 078000h–07FFFFh SA23 010000xxx 64/32 100000h-10FFFFh 080000h–087FFFh SA24 010001xxx 64/32 110000h-11FFFFh 088000h–08FFFFh SA25 010010xxx 64/32 120000h-12FFFFh 090000h–097FFFh SA26 010011xxx 64/32 130000h-13FFFFh 098000h–09FFFFh SA27 010100xxx 64/32 140000h-14FFFFh 0A0000h–0A7FFFh SA28 010101xxx 64/32 150000h-15FFFFh 0A8000h–0AFFFFh SA29 010110xxx 64/32 160000h-16FFFFh 0B0000h–0B7FFFh SA30 010111xxx 64/32 170000h-17FFFFh 0B8000h–0BFFFFh SA31 011000xxx 64/32 180000h-18FFFFh 0C0000h–0C7FFFh SA32 011001xxx 64/32 190000h-19FFFFh 0C8000h–0CFFFFh SA33 011010xxx 64/32 1A0000h-1AFFFFh 0D0000h–0D7FFFh SA34 011011xxx 64/32 1B0000h-1BFFFFh 0D8000h–0DFFFFh SA35 011100xxx 64/32 1C0000h-1CFFFFh 0E0000h–0E7FFFh SA36 011101xxx 64/32 1D0000h-1DFFFFh 0E8000h–0EFFFFh SA37 011110xxx 64/32 1E0000h-1EFFFFh 0F0000h–0F7FFFh SA38 011111xxx 64/32 1F0000h-1FFFFFh SA39 100000xxx 64/32 200000h-20FFFFh 0F8000h–0FFFFFh 100000h–107FFFh SA40 100001xxx 64/32 210000h-21FFFFh 108000h–10FFFFh SA41 100010xxx 64/32 220000h-22FFFFh 110000h–117FFFh SA42 100011xxx 64/32 230000h-23FFFFh 118000h–11FFFFh SA43 100100xxx 64/32 240000h-24FFFFh 120000h–127FFFh SA44 100101xxx 64/32 250000h-25FFFFh 128000h–12FFFFh SA45 100110xxx 64/32 260000h-26FFFFh 130000h–137FFFh Am29DS323D 23480A5 October 10, 2006 D A T A Bank 2 Am29DS323DB Table 5. S H E E T Bottom Boot Sector Addresses (Am29DS32xDB) (Continued) Sector Sector Address A20–A12 Sector Size (Kbytes/Kwords) (x8) Address Range (x16) Address Range SA46 100111xxx 64/32 270000h-27FFFFh 138000h–13FFFFh SA47 101000xxx 64/32 280000h-28FFFFh 140000h–147FFFh SA48 101001xxx 64/32 290000h-29FFFFh 148000h–14FFFFh SA49 101010xxx 64/32 2A0000h-2AFFFFh 150000h–157FFFh SA50 101011xxx 64/32 2B0000h-2BFFFFh 158000h–15FFFFh SA51 101100xxx 64/32 2C0000h-2CFFFFh 160000h–167FFFh SA52 101101xxx 64/32 2D0000h-2DFFFFh 168000h–16FFFFh SA53 101110xxx 64/32 2E0000h-2EFFFFh 170000h–177FFFh SA54 101111xxx 64/32 2F0000h-2FFFFFh 178000h–17FFFFh SA55 111000xxx 64/32 300000h-30FFFFh 180000h–187FFFh SA56 110001xxx 64/32 310000h-31FFFFh 188000h–18FFFFh SA57 110010xxx 64/32 320000h-32FFFFh 190000h–197FFFh SA58 110011xxx 64/32 330000h-33FFFFh 198000h–19FFFFh SA59 110100xxx 64/32 340000h-34FFFFh 1A0000h–1A7FFFh SA60 110101xxx 64/32 350000h-35FFFFh 1A8000h–1AFFFFh SA61 110110xxx 64/32 360000h-36FFFFh 1B0000h–1B7FFFh SA62 110111xxx 64/32 370000h-37FFFFh 1B8000h–1BFFFFh SA63 111000xxx 64/32 380000h-38FFFFh 1C0000h–1C7FFFh SA64 111001xxx 64/32 390000h-39FFFFh 1C8000h–1CFFFFh SA65 111010xxx 64/32 3A0000h-3AFFFFh 1D0000h–1D7FFFh SA66 111011xxx 64/32 3B0000h-3BFFFFh 1D8000h–1DFFFFh SA67 111100xxx 64/32 3C0000h-3CFFFFh 1E0000h–1E7FFFh SA68 111101xxx 64/32 3D0000h-3DFFFFh 1E8000h–1EFFFFh SA69 111110xxx 64/32 3E0000h-3EFFFFh 1F0000h–1F7FFFh SA70 111111xxx 64/32 3F0000h-3FFFFFh 1F8000h–1FFFFFh Note: The address range is A20:A-1 in byte mode (BYTE#=VIL) or A20:A0 in word mode (BYTE#=VIH). The bank address bits are A20 and A19 for Am29DS323DB. Table 6. Secured Silicon Sector Addresses for Bottom Boot Devices Sector Address A20–A12 Size (x8) Address Range (x16) Address Range Entire Sector 000000xxx 64 Kbytes/32 Kwords 000000h-00FFFFh 00000h-07FFFh Factory Programmed ESN 000000xxx 16 bytes/8 words 000000h-00000Fh 00000h-00007h Secured Silicon Sector October 10, 2006 23480A5 Am29DS323D 15 D A T A S H E E T Autoselect Mode Table 7. In addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits (see Tables 3–6). Table 7 shows the remaining address bits that are don’t care. When all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ7–DQ0. The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equipm e n t t o a u t o m a t i c a l l y m a t c h a d ev i c e t o b e programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in Table 14. This method does not require V ID. Refer to the Autoselect Command Sequence section for more information. When using programming equipment, the autoselect mode requires VID (9.0 V to 11.0 V) on address pin A9. Address pins A6, A1, and A0 must be as shown in Table 7. Am29DS323D Autoselect Codes (High Voltage Method) A11 to A10 A9 A8 to A7 DQ8 to DQ15 A6 A5 to A2 A1 A0 DQ7 to DQ0 CE# OE# WE# A20 to A12 Manufacturer ID: AMD L L H BA X VID X L X L L X X 01h Device ID: Am29DS323D L L H BA X VID X L X L H 22h X B7h (T), B8h (B) Sector Protection Verification L L H SA X VID X L X H L X X 01h (protected), 00h (unprotected) Secured Silicon Sector Indicator Bit (DQ7) L L H BA X VID X L X H H X X 85h (factory locked), 05h (not factory locked) Description BYTE# BYTE# = VIH = VIL Legend: T = Top Boot Block, B = Bottom Boot Block, L = Logic Low = VIL, H = Logic High = VIH, BA = Bank Address, SA = Sector Address, X = Don’t care. 16 Am29DS323D 23480A5 October 10, 2006 D A T A Sector/Sector Block Protection and Unprotection S H E E T Table 9. Bottom Boot Sector/Sector Block Addresses for Protection/Unprotection (Note: For the following discussion, the term “sector” applies to both sectors and sector blocks. A sector block consists of two or more adjacent sectors that are protected or unprotected at the same time (see Tables 8 and 9). Table 8. Top Boot Sector/Sector Block Addresses for Protection/Unprotection Sector A20–A12 Sector/ Sector Block Size SA0 000000XXX 64 Kbytes SA1-SA3 000001XXX, 000010XXX 000010XXX 192 (3x64) Kbytes Sector A20–A12 Sector/Sector Block Size SA70 111111XXX 64 Kbytes SA69-SA67 111110XXX, 111101XXX, 111100XXX 192 (3x64) Kbytes SA66-SA63 1110XXXXX 256 (4x64) Kbytes SA62-SA59 1101XXXXX 256 (4x64) Kbytes SA58-SA55 1100XXXXX 256 (4x64) Kbytes SA54-SA51 1011XXXXX 256 (4x64) Kbytes SA50-SA47 1010XXXXX 256 (4x64) Kbytes SA46-SA43 1001XXXXX 256 (4x64) Kbytes SA42-SA39 1000XXXXX 256 (4x64) Kbytes SA4-SA7 0001XXXXX 256 (4x64) Kbytes SA38-SA35 0111XXXXX 256 (4x64) Kbytes SA8-SA11 0010XXXXX 256 (4x64) Kbytes SA34-SA31 0110XXXXX 256 (4x64) Kbytes SA12-SA15 0011XXXXX 256 (4x64) Kbytes SA30-SA27 0101XXXXX 256 (4x64) Kbytes SA16-SA19 0100XXXXX 256 (4x64) Kbytes SA26-SA23 0100XXXXX 256 (4x64) Kbytes SA20-SA23 0101XXXXX 256 (4x64) Kbytes SA22–SA19 0011XXXXX 256 (4x64) Kbytes SA24-SA27 0110XXXXX 256 (4x64) Kbytes SA18-SA15 0010XXXXX 256 (4x64) Kbytes SA28-SA31 0111XXXXX 256 (4x64) Kbytes SA14-SA11 0001XXXXX 256 (4x64) Kbytes SA32-SA35 1000XXXXX 256 (4x64) Kbytes SA36-SA39 1001XXXXX 256 (4x64) Kbytes SA10-SA8 000011XXX, 000010XXX, 000001XXX 192 (3x64) Kbytes SA40-SA43 1010XXXXX 256 (4x64) Kbytes SA7 000000111 8 Kbytes SA44-SA47 1011XXXXX 256 (4x64) Kbytes SA6 000000110 8 Kbytes SA48-SA51 1100XXXXX 256 (4x64) Kbytes SA5 000000101 8 Kbytes SA52-SA55 1101XXXXX 256 (4x64) Kbytes SA4 000000100 8 Kbytes SA56-SA59 1110XXXXX 256 (4x64) Kbytes SA3 000000011 8 Kbytes SA60-SA62 111100XXX, 111101XXX, 111110XXX 192 (3x64) Kbytes SA2 000000010 8 Kbytes SA1 000000001 8 Kbytes SA63 111111000 8 Kbytes SA0 000000000 8 Kbytes SA64 111111001 8 Kbytes SA65 111111010 8 Kbytes SA66 111111011 8 Kbytes SA67 111111100 8 Kbytes SA68 111111101 8 Kbytes SA69 111111110 8 Kbytes SA70 111111111 8 Kbytes October 10, 2006 23480A5 The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors. Sector protection and unprotection can be implemented via two methods. The primary method requires VID on the RESET# pin only, and can be implemented either in-system or via programming equipment. Figure 2 shows the algorithms and Figure 25 shows the timing diagram. This method uses standard microprocessor bus cycle timing. For sector unprotect, all unprotected sectors must first be protected prior to the first sector unprotect write cycle. Am29DS323D 17 D A T A The alternate method intended only for programming equipment requires VID on address pin A9 and OE#. This method is compatible with programmer routines written for earlier 1.8 volt-only AMD flash devices. Contact an AMD representative for further details. The device is shipped with all sectors unprotected. AMD offers the option of programming and protecting sectors at its factory prior to shipping the device through AMD’s ExpressFlash™ Service. Contact an AMD representative for details. It is possible to determine whether a sector is protected or unprotected. See the Autoselect Mode section for details. S H E E T block consists of two or more adjacent sectors that are protected or unprotected at the same time (see Tables 8 and 9). This feature allows temporary unprotection of previously protected sectors to change data in-system. The Sector Unprotect mode is activated by setting the RESET# pin to VID (9.0 V – 11.0 V). During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are protected again. Figure 1 shows the algorithm, and Figure 24 shows the timing diagrams, for this feature. Write Protect (WP#) The Write Protect function provides a hardware method of protecting certain boot sectors without using VID. This function is one of two provided by the WP#/ACC pin. START If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the two “outermost” 8 Kbyte boot sectors independently of whether those sectors were protected or unprotected using the method described in “Sector/Sector Block Protection and Unprotection”. The two outermost 8 Kbyte boot sectors are the two sectors containing the lowest addresses in a bottom-boot-configured device, or the two sectors containing the highest addresses in a top-boot-configured device. If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the two outermost 8 Kbyte boot sectors were last set to be protected or unprotected. That is, sector protection or unprotection for these two sectors depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and Unprotection”. Note that the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. RESET# = VID (Note 1) Perform Erase or Program Operations RESET# = VIH Temporary Sector Unprotect Completed (Note 2) Notes: 1. All protected sectors unprotected (If WP#/ACC = VIL, outermost boot sectors will remain protected). 2. All previously protected sectors are protected once again. Temporary Sector/Sector Block Unprotect (Note: For the following discussion, the term “sector” applies to both sectors and sector blocks. A sector 18 Figure 1. Am29DS323D Temporary Sector Unprotect Operation 23480A5 October 10, 2006 D A T A S H E E T START START Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address PLSCNT = 1 RESET# = VID Wait 1 μs No Temporary Sector Unprotect Mode PLSCNT = 1 RESET# = VID Wait 1 μs No First Write Cycle = 60h? First Write Cycle = 60h? Yes Yes Set up sector address No All sectors protected? Sector Protect: Write 60h to sector address with A6 = 0, A1 = 1, A0 = 0 Yes Set up first sector address Sector Unprotect: Write 60h to sector address with A6 = 1, A1 = 1, A0 = 0 Wait 150 µs Verify Sector Protect: Write 40h to sector address with A6 = 0, A1 = 1, A0 = 0 Increment PLSCNT Temporary Sector Unprotect Mode Reset PLSCNT = 1 Read from sector address with A6 = 0, A1 = 1, A0 = 0 Wait 15 ms Verify Sector Unprotect: Write 40h to sector address with A6 = 1, A1 = 1, A0 = 0 Increment PLSCNT No No PLSCNT = 25? Read from sector address with A6 = 1, A1 = 1, A0 = 0 Data = 01h? Yes Yes No Yes PLSCNT = 1000? Protect another sector? Device failed No Yes Remove VID from RESET# Device failed Write reset command Sector Protect Algorithm Sector Protect complete Set up next sector address No Data = 00h? Yes Last sector verified? No Yes Sector Unprotect Algorithm Remove VID from RESET# Write reset command Sector Unprotect complete Note: The term “sector” in the figure applies to both sectors and sector blocks. Figure 2. October 10, 2006 23480A5 In-System Sector/Sector Block Protect and Unprotect Algorithms Am29DS323D 19 D A T A Secured Silicon Sector Flash Memory Region The Secured Silicon Sector feature provides a Flash memory region that enables permanent part identification through an Electronic Serial Number (ESN). The Secured Silicon Sector is 64 Kbytes in length, and uses a Secured Silicon Sector Indicator Bit to indicate whether or not the Secured Silicon Sector is locked when shipped from the factory. This bit is permanently set at the factory and cannot be changed, which prevents cloning of a factory locked part. This ensures the security of the ESN once the product is shipped to the field. AMD offers the device with the Secured Silicon Sector either factory locked or customer lockable. The factory-locked version is always protected when shipped from the factory, and has the Secured Silicon Sector Indicator Bit per manently set to a “1.” The customer-lockable version is shipped with the unprotected, allowing customers to utilize the that sector in any manner they choose. The customer-lockable version has the Secured Silicon Sector Indicator Bit permanently set to a “0.” Thus, the Secured Silicon Sector Indicator Bit prevents customer-lockable devices from being used to replace devices that are factory locked. The system accesses the Secured Silicon Sector through a command sequence (see “Enter Secured Silicon Sector/Exit Secured Silicon Sector Command Sequence”). After the system has written the Enter Secured Silicon Sector command sequence, it may read the Secured Silicon Sector by using the addresses normally occupied by the boot sectors. This mode of operation continues until the system issues the Exit Secured Silicon Sector command sequence, or until power is removed from the device. On power-up, or following a hardware reset, the device rever ts to sending commands to the boot sectors instead of the Secured Silicon sector. Factory Locked: Secured Silicon Sector Programmed and Protected at the Factory In a factory locked device, the Secured Silicon Sector is protected when the device is shipped from the factory. The Secured Silicon Sector cannot be modified in any way. The device is available preprogrammed with one of the following: ■ A random, secure ESN only ■ Customer code through the ExpressFlash service ■ Both a random, secure ESN and customer code through the ExpressFlash service. In devices that have an ESN, a Bottom Boot device will have the 16-byte ESN at addresses 20 S H E E T 000000h–000007h in word mode (or 000000h–00000Fh in byte mode). In the Top Boot device the starting address of the ESN will be at addresses 1F83C0h–1F83C7h in word mode (or addresses 3F0780h–3F078Fh in byte mode). Customers may opt to have their code programmed by AMD through the AMD ExpressFlash service. AMD programs the customer’s code, with or without the random ESN. The devices are then shipped from AMD’s factory with the permanently locked. Contact an AMD representative for details on using AMD’s ExpressFlash service. Customer Lockable: Secured Silicon Sector NOT Programmed or Protected at the Factory If the security feature is not required, the Secured Silicon Sector can be treated as an additional Flash memory space, expanding the size of the available Flash array by 64 Kbytes. The Secured Silicon Sector can be read, programmed, and erased as often as required. The Secured Silicon Sector area can be protected using one of the following procedures: ■ Write the three-cycle Enter Secured Silicon Sector Region command sequence, and then follow the in-system sector protect algorithm as shown in Figure 2, except that RESET# may be at either VIH or VID. This allows in-system protection of the without raising any device pin to a high voltage. Note that this method is only applicable to the Secured Silicon Sector. ■ Write the three-cycle Enter Secured Silicon Sector Region command sequence, and then use the alternate method of sector protection described in the “Sector/Sector Block Protection and Unprotection”. Once the Secured Silicon Sector is locked and verified, the system must write the Exit Secured Silicon Sector Region command sequence to return to reading and writing the remainder of the array. The Secured Silicon Sector protection must be used with caution since, once protected, there is no procedure available for unprotecting the Secured Silicon Sector area and none of the bits in the Secured Silicon Sector memory space can be modified in any way. Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to Table 14 for command definitions). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and power-down transitions, or from system noise. Am29DS323D 23480A5 October 10, 2006 D A T A Low VCC Write Inhibit When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to reading array data. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO. Write Pulse “Glitch” Protection Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. Logical Inhibit Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one. Power-Up Write Inhibit If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to reading array data on power-up. COMMON FLASH MEMORY INTERFACE (CFI) Table 10. S H E E T The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system can read CFI information at the addresses given in Tables 10–13. To terminate reading CFI data, the system must write the reset command. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode, and the system can read CFI data at the addresses given in Tables 10–13. The system must write the reset command to return the device to the autoselect mode. For further information, please refer to the CFI Specification and CFI Publication 100, available via the World Wide Web at http://www.amd.com/products/nvd/overv i ew / c f i . h t m l . A l t e r n a t i ve l y, c o n t a c t a n A M D representative for copies of these documents. CFI Query Identification String Addresses (Word Mode) Addresses (Byte Mode) Data 10h 11h 12h 20h 22h 24h 0051h 0052h 0059h Query Unique ASCII string “QRY” 13h 14h 26h 28h 0002h 0000h Primary OEM Command Set 15h 16h 2Ah 2Ch 0040h 0000h Address for Primary Extended Table 17h 18h 2Eh 30h 0000h 0000h Alternate OEM Command Set (00h = none exists) 19h 1Ah 32h 34h 0000h 0000h Address for Alternate OEM Extended Table (00h = none exists) October 10, 2006 23480A5 Description Am29DS323D 21 D A T A Table 11. S H E E T System Interface String Addresses (Word Mode) Addresses (Byte Mode) Data 1Bh 36h 0018h VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Ch 38h 0022h VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Dh 3Ah 0000h VPP Min. voltage (00h = no VPP pin present) 1Eh 3Ch 0000h VPP Max. voltage (00h = no VPP pin present) 1Fh 3Eh 0004h Typical timeout per single byte/word write 2N µs 20h 40h 0000h Typical timeout for Min. size buffer write 2N µs (00h = not supported) 21h 42h 000Ah Typical timeout per individual block erase 2N ms 22h 44h 0000h Typical timeout for full chip erase 2N ms (00h = not supported) 23h 46h 0005h Max. timeout for byte/word write 2N times typical 24h 48h 0000h Max. timeout for buffer write 2N times typical 25h 4Ah 0004h Max. timeout per individual block erase 2N times typical 26h 4Ch 0000h Max. timeout for full chip erase 2N times typical (00h = not supported) Table 12. Addresses (Word Mode) 22 Addresses (Byte Mode) Description Device Geometry Definition Data Description N 27h 4Eh 0016h Device Size = 2 byte 28h 29h 50h 52h 0000h 0000h Flash Device Interface description (refer to CFI publication 100) 2Ah 2Bh 54h 56h 0000h 0000h Max. number of bytes in multi-byte write = 2N (00h = not supported) 2Ch 58h 0002h Number of Erase Block Regions within device 2Dh 2Eh 2Fh 30h 5Ah 5Ch 5Eh 60h 0007h 0000h 0020h 0000h Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 31h 32h 33h 34h 62h 64h 66h 68h 003Eh 0000h 0000h 0001h Erase Block Region 2 Information 35h 36h 37h 38h 6Ah 6Ch 6Eh 70h 0000h 0000h 0000h 0000h Erase Block Region 3 Information 39h 3Ah 3Bh 3Ch 72h 74h 76h 78h 0000h 0000h 0000h 0000h Erase Block Region 4 Information Am29DS323D 23480A5 October 10, 2006 D A T A Table 13. S H E E T Primary Vendor-Specific Extended Query Addresses (Word Mode) Addresses (Byte Mode) Data 40h 41h 42h 80h 82h 84h 0050h 0052h 0049h Query-unique ASCII string “PRI” 43h 86h 0031h Major version number, ASCII 44h 88h 0032h Minor version number, ASCII 45h 8Ah 0000h Address Sensitive Unlock (Bits 1-0) 0 = Required, 1 = Not Required Description Silicon Revision Number (Bits 7-2) 46h 8Ch 0002h Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write 47h 8Eh 0001h Sector Protect 0 = Not Supported, X = Number of sectors in per group 48h 90h 0001h Sector Temporary Unprotect 00 = Not Supported, 01 = Supported 49h 92h 0004h Sector Protect/Unprotect scheme 04 = 29LV800 mode 4Ah 94h 00XXh (See Note) 4Bh 96h 0000h Burst Mode Type 00 = Not Supported, 01 = Supported 4Ch 98h 0000h Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page 4Dh 9Ah 0085h 4Eh 9Ch 0095h 4Fh 9Eh 000Xh Simultaneous Operation 00 = Not Supported, X = Number of Sectors in Bank 2 (Uniform Bank) ACC (Acceleration) Supply Minimum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV ACC (Acceleration) Supply Maximum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV Top/Bottom Boot Sector Flag 02h = Bottom Boot Device, 03h = Top Boot Device Note: The number of sectors in Bank 2 is device dependent. Am29DS322 = 38h Am29DS323 = 30h October 10, 2006 23480A5 Am29DS323D 23 D A T A S H E E T COMMAND DEFINITIONS Writing specific address and data commands or sequences into the command register initiates device operations. Table 14 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens first. Refer to the AC Characteristics section for timing diagrams. Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. Each bank is ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the corresponding bank enters the erase-suspend-read mode, after which the system can read data from any non-erase-suspended sector within the same bank. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See the Erase Suspend/Erase Resume Commands section for more information. The system must issue the reset command to return a bank to the read (or erase-suspend-read) mode if DQ5 goes high during an active program or erase operation, or if the bank is in the autoselect mode. See the next section, Reset Command, for more information. See also Requirements for Reading Array Data in the Device Bus Operations section for more information. The Memory Array Read-Only Operations table provides the read parameters, and Figure 13 shows the timing diagram. Reset Command Writing the reset command resets the banks to the read or erase-suspend-read mode. Address bits are don’t cares for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the bank to which the system was writing to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the bank to which the system was writing to reading array data. If the program command sequence is written to a bank 24 that is in the Erase Suspend mode, writing the reset com man d r etur n s th at b ank to the era se-suspend-read mode. Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to reading array data. If a bank entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. If DQ5 goes high during a program or erase operation, writing the reset command returns the banks to reading array data (or erase-suspend-read mode if that bank was in Erase Suspend). Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and device codes, and determine whether or not a sector is protected. Table 14 shows the address and data requirements. This method is an alternative to that shown in Table 7, which is intended for PROM programmers and requires V I D on address pin A9. The autoselect command sequence may be written to an address within a bank that is either in the read or erase-suspend-read mode. The autoselect command may not be written while the device is actively programming or erasing in the other bank. The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains the bank address and the autoselect command. The bank then enters the autoselect mode. The system may read at any address within the same bank any number of times without initiating another autoselect command sequence. The following table describes the hex address requirements for the various autoselect functions, and the resulting data. BA represents the bank address, and SA represents the sector address. Description Word Address Byte Address Read Data* Maufacturer ID (BA) + 00 (BA) + 00 01 Device ID (BA) + 01 (BA) + 02 22B7 (top boot) 22B8 (bottom boot) Sector Block Protect Verify (SA) + 02 (SA) + 04 00 (unlocked), 01 (locked) Secured Silicon Sector Factory Protect (BA) + 03 (BA) + 06 85 (factory locked) 05 (not factory locked) * For byte mode, ignore data output bits D8–DQ15. Am29DS323D 23480A5 October 10, 2006 D A T A The system must write the reset command to return to reading array data (or erase-suspend-read mode if the bank was previously in Erase Suspend). Enter Secured Silicon Sector/Exit Secured Silicon Sector Command Sequence The system can access the Secured Silicon Sector region by issuing the three-cycle Enter Secured Silicon Sector command sequence. The device continues to access the Secured Silicon Sector region until the system issues the four-cycle Exit Secured Silicon Sector command sequence. The Exit Secured Silicon Sector command sequence returns the device to normal operation. Table 14 shows the address and data requirements for both command sequences. See also “Secured Silicon Sector Flash Memory Region” for furt h e r i n fo r m a t i o n . N o t e t h a t a h a r d wa r e r e s e t (RESET#=VIL) will reset the device to reading array data. Byte/Word Program Command Sequence The system may program the device by word or byte, depending on the state of the BYTE# pin. Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verifies the programmed cell margin. Table 14 shows the address and data requirements for the byte program command sequence. When the Embedded Program algorithm is complete, that bank then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. Refer to the Write Operation Status section for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed October 10, 2006 23480A5 S H E E T from “0” back to a “1.” Attempting to do so may cause that bank to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the data is still “0.” Only erase operations can convert a “0” to a “1.” Unlock Bypass Command Sequence The unlock bypass feature allows the system to program bytes or words to a bank faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. That bank then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 14 shows the requirements for the command sequence. During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the bank address and the data 90h. The second cycle need only contain the data 00h. The bank then returns to the reading array data. The device offers accelerated program operations through the WP#/ACC pin. When the system asserts VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass program command sequence. The device uses the higher voltage on the WP#/ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at VHH any operation other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. Figure 3 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations table in the AC Characteristics section for parameters, and Figure 17 for timing diagrams. Am29DS323D 25 D A T A Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. START Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters, and Figure 19 section for timing diagrams. Write Program Command Sequence Embedded Program algorithm in progress Data Poll from System Sector Erase Command Sequence Verify Data? Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and the sector erase command. Table 14 shows the address and data requirements for the sector erase command sequence. No Yes Increment Address No The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Last Address? Yes Programming Completed Note: See Table 14 for program command sequence. Figure 3. Program Operation Chip Erase Command Sequence Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 14 shows the address and data requirements for the chip erase command sequence. When the Embedded Erase algorithm is complete, that bank returns to reading array data and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to the Write Operation Status section for information on these status bits. 26 S H E E T After the command sequence is written, a sector erase time-out of 50 µs occurs. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50 µs, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out may or may not be accepted. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. Any command other than Sector Erase or Erase Suspend during the time-out period resets that bank to reading array data. The system must rewrite the command sequence and any additional addresses and commands. The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3: Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command sequence. When the Embedded Erase algorithm is complete, the bank returns to reading array data and addresses are no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data from the non-erasing bank. The system can determine the status of the erase operation by reading Am29DS323D 23480A5 October 10, 2006 D A T A DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer to the Write Operation Status section for information on these status bits. Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters, and Figure 19 section for timing diagrams. S H E E T program operation using the DQ7 or DQ6 status bits, just as in the standard Byte Program operation. Refer to the Write Operation Status section for more information. In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to the Autoselect Mode and Autoselect Command Sequence sections for details. To resume the sector erase operation, the system must write the Erase Resume command. The bank address of the erase-suspended bank is required when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing. Erase Suspend/Erase Resume Commands The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. The bank address is required when writing this command. This command is valid only during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. START Write Erase Command Sequence (Notes 1, 2) When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to the Write Operation Status section for information on these status bits. Data Poll to Erasing Bank from System No Data = FFh? Yes Erasure Completed Notes: 1. See Table 14 for erase command sequence. 2. See the section on DQ3 for information on the sector erase timer. After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read mode. The system can determine the status of the October 10, 2006 23480A5 Embedded Erase algorithm in progress Am29DS323D Figure 4. Erase Operation 27 D A T A S H E E T Command Definitions Cycles Table 14. Command Sequence (Note 1) Read (Note 6) Autoselect (Note 8) Reset (Note 7) Manufacturer ID Device ID Secured Silicon Sector Factory Protect (Note 9) Word Byte Word Byte Word Byte Sector Protect Verify (Note Word 10) Byte Enter Secured Silicon Sector Region Word Exit Secured Silicon Sector Region Word Program Unlock Bypass Byte Byte Word Byte Word Byte Am29DS323D Command Definitions Bus Cycles (Notes 2–5) First Second Addr Data 1 RA RD 1 XXX F0 4 4 4 4 3 4 4 3 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA AA AA AA AA AA AA AA AA Addr 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555 Data 55 55 55 55 55 55 55 55 Unlock Bypass Program (Note 11) 2 XXX A0 PA PD Unlock Bypass Reset (Note 12) 2 BA 90 XXX 00 Chip Erase Sector Erase Word Byte Word Byte 6 6 555 AAA 555 AAA AA AA Erase Suspend (Note 13) 1 BA B0 Erase Resume (Note 14) 1 BA 30 CFI Query (Note 15) Word Byte 1 55 AA 2AA 555 2AA 555 Notes: 1. See Table 1 for description of bus operations. 2. All values are in hexadecimal. (BA)555 (BA)AAA (BA)555 (BA)AAA (BA)555 (BA)AAA (BA)555 (BA)AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA Fourth Fifth Data Addr Data 90 (BA)X00 01 90 90 90 (BA)X01 (BA)X02 (BA)X03 (BA)X06 (SA)X02 (SA)X04 Addr Sixth Data Addr Data ( Table 7) 85/05 00/01 88 90 XXX 00 A0 PA PD 20 80 80 555 AAA 555 AAA AA AA 2AA 555 2AA 555 55 55 555 AAA SA 10 30 PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A20–A12 uniquely select any sector. BA = Address of the bank that is being switched to autoselect mode, is in bypass mode, or is being erased. 9. 3. Except for the read cycle and the fourth cycle of the autoselect command sequence, all bus cycles are write cycles. 4. Data bits DQ15–DQ8 are don’t care in command sequences, except for RD and PD. 5. Unless otherwise noted, address bits A20–A11 are don’t cares. 6. No unlock or command cycles required when bank is in read mode. 7. The Reset command is required to return to reading array data (or to the erase-suspend-read mode if previously in Erase Suspend) when a bank is in the autoselect mode, or if DQ5 goes high (while the bank is providing status information). 28 55 Addr 98 Legend: X = Don’t care RA = Address of the memory location to be read. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. 8. 55 Third The fourth cycle of the autoselect command sequence is a read cycle. The system must provide the bank address to obtain the manufacturer ID, device ID, or Secured Silicon Sector factory protect information. Data bits DQ15–DQ8 are don’t care. See the Autoselect Command Sequence section for more information. The data is 85h for factory locked and 05h for not factory locked. 10. The data is 00h for an unprotected sector/sector block and 01h for a protected sector/sector block. 11. The Unlock Bypass command is required prior to the Unlock Bypass Program command. 12. The Unlock Bypass Reset command is required to return to reading array data when the bank is in the unlock bypass mode. 13. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation, and requires the bank address. 14. The Erase Resume command is valid only during the Erase Suspend mode, and requires the bank address. 15. Command is valid when device is ready to read array data or when device is in autoselect mode. Am29DS323D 23480A5 October 10, 2006 D A T A S H E E T WRITE OPERATION STATUS The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table 15 and the following subsections describe the function of these bits. DQ7 and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/BY#, to determine whether an Embedded Program or Erase operation is in progress or has been completed. pleted the program or erase operation and DQ7 has valid data, the data outputs on DQ0–DQ6 may be still invalid. Valid data on DQ0–DQ7 will appear on successive read cycles. Table 15 shows the outputs for Data# Polling on DQ7. Figure 5 shows the Data# Polling algorithm. Figure 21 in the AC Characteristics section shows the Data# Polling timing diagram. DQ7: Data# Polling START The Data# Polling bit, DQ7, indicates to the host system wh ethe r a n Em be dde d Pr ogram or Erase algorithm is in progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. Read DQ7–DQ0 Addr = VA During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then that bank returns to reading array data. DQ7 = Data? No No Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ0–DQ6 while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has com- October 10, 2006 23480A5 DQ5 = 1? Yes During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the bank enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the bank returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid. Yes Read DQ7–DQ0 Addr = VA DQ7 = Data? Yes No FAIL PASS Notes: 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Am29DS323D Figure 5. Data# Polling Algorithm 29 D A T A RY/BY#: Ready/Busy# The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is reading array data, the standby mode, or one of the banks is in the erase-suspend-read mode. S H E E T DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. Table 15 shows the outputs for Toggle Bit I on DQ6. Figure 6 shows the toggle bit algorithm. Figure 22 in the “AC Characteristics” section shows the toggle bit timing diagrams. Figure 23 shows the differences between DQ2 and DQ6 in graphical form. See also the subsection on DQ2: Toggle Bit II. START Table 15 shows the outputs for RY/BY#. Read DQ7–DQ0 DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is complete, DQ6 stops toggling. Read DQ7–DQ0 Toggle Bit = Toggle? Yes No After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. DQ5 = 1? Yes Read DQ7–DQ0 Twice The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on DQ7: Data# Polling). If a program address falls within a protected sector, DQ6 toggles for approximately 1 μs after the program command sequence is written, then returns to reading array data. Toggle Bit = Toggle? No Yes Program/Erase Operation Not Complete, Write Reset Command Program/Erase Operation Complete Note: The system should recheck the toggle bit even if DQ5 = “1” because the toggle bit may stop toggling as DQ5 changes to “1.” See the subsections on DQ6 and DQ2 for more information. Figure 6. 30 No Am29DS323D Toggle Bit Algorithm 23480A5 October 10, 2006 D A T A DQ2: Toggle Bit II The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 15 to compare outputs for DQ2 and DQ6. Figure 6 shows the toggle bit algorithm in flowchart form, and the section “DQ2: Toggle Bit II” explains the algorithm. See also the DQ6: Toggle Bit I subsection. Figure 22 shows the toggle bit timing diagram. Figure 23 shows the differences between DQ2 and DQ6 in graphical form. Reading Toggle Bits DQ6/DQ2 Refer to Figure 6 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ7–DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cy- October 10, 2006 23480A5 S H E E T cles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 6). DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1,” indicating that the program or erase cycle was not successfully completed. The device may output a “1” on DQ5 if the system tries to program a “1” to a location that was previously programmed to “0.” Only an erase operation can change a “0” back to a “1.” Under this condition, the device halts the operation, and when the timing limit has been exceeded, DQ5 produces a “1.” Under both these conditions, the system must write the reset command to return to reading array data (or to the erase-suspend-read mode if a bank was previously in the erase-suspend-program mode). DQ3: Sector Erase Timer After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a “0” to a “1.” If the time between additional sector erase commands from the system can be assumed to be less than 50 µs, the system need not monitor DQ3. See also the Sector Erase Command Sequence section. After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is “1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “0,” the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 15 shows the status of DQ3 relative to the other status bits. Am29DS323D 31 D A T A Table 15. Standard Mode Erase Suspend Mode Status Embedded Program Algorithm Embedded Erase Algorithm Erase Erase-Suspend- Suspended Sector Read Non-Erase Suspended Sector Erase-Suspend-Program S H E E T Write Operation Status DQ7 (Note 2) DQ7# 0 DQ6 Toggle Toggle DQ5 (Note 1) 0 0 DQ3 N/A 1 DQ2 (Note 2) No toggle Toggle RY/BY# 0 0 1 No toggle 0 N/A Toggle 1 Data Data Data Data Data 1 DQ7# Toggle 0 N/A N/A 0 Notes: 1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the section on DQ5 for more information. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm is in progress. The device outputs array data if the system addresses a non-busy bank. 32 Am29DS323D 23480A5 October 10, 2006 D A T A S H E E T ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C Ambient Temperature with Power Applied. . . . . . . . . . . . . . –65°C to +125°C Voltage with Respect to Ground VCC (Note 1) . . . . . . . . . . . . . . . . . –0.5 V to +2.5 V A9, OE#, and RESET# (Note 2) . . . . . . . . . . . . . . . . . . . . . –0.5 V to +11 V 20 ns +0.8 V –0.5 V –2.0 V 20 ns WP#/ACC . . . . . . . . . . . . . . . . . . –0.5 V to +10.5 V Figure 7. Maximum Negative Overshoot Waveform All other pins (Note 1) . . . . . . –0.5 V to VCC +0.5 V Output Short Circuit Current (Note 3) . . . . . . 100 mA Notes: 1. Minimum DC voltage on input or I/O pins is –0.5 V. Dur ing voltage transitions, input or I/O pins may overshoot V SS to –2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V. See Figure 7. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 8. 2. Minimum DC input voltage on pins A9, OE#, RESET#, and WP#/ACC is –0.5 V. During voltage transitions, A9, OE#, WP#/ACC, and RESET# may overshoot V SS to –2.0 V for periods of up to 20 ns. See Figure 7. Maximum DC input voltage on pin A9 is +12.5 V which may overshoot to +14.0 V for periods up to 20 ns. Maximum DC input voltage on WP#/ACC is +9.5 V which may overshoot to +12.0 V for periods up to 20 ns. 20 ns 20 ns VCC +2.0 V VCC +0.5 V 2.0 V 20 ns 20 ns Figure 8. Maximum Positive Overshoot Waveform 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. OPERATING RANGES Commercial (C) Devices Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C Industrial (I) Devices Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C VCC Supply Voltages VCC for standard voltage range . . . . . . . 1.8 V to 2.2 V Operating ranges define those limits between which the functionality of the device is guaranteed. October 10, 2006 23480A5 Am29DS323D 33 D A T A S H E E T DC CHARACTERISTICS CMOS Compatible Parameter Symbol Parameter Description Test Conditions ILI Input Load Current VIN = VSS to VCC, VCC = VCC max ILIT A9 Input Load Current VCC = VCC max; A9 = 11 V ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC max Min Typ Max Unit ±1.0 µA 35 µA ±1.0 µA CE# = VIL, OE# = VIH, Byte Mode 5 MHz 5 16 1 MHz 1 4 CE# = VIL, OE# = VIH, Word Mode 5 MHz 5 16 1 MHz 1 4 ICC2 VCC Active Write Current (Notes 2, 3) CE# = VIL, OE# = VIH, WE# = VIL 10 15 mA ICC3 VCC Standby Current (Note 2) CE#, RESET# = VCC ± 0.3 V 0.2 5 µA ICC4 VCC Reset Current (Note 2) RESET# = VSS ± 0.3 V 0.2 5 µA ICC5 Automatic Sleep Mode (Notes 2, 4) VIH = VCC ± 0.3 V; VIL = VSS ± 0.3 V 0.2 5 µA ICC6 VCC Active Read-While-Program Current (Notes 1, 2) CE# = VIL, OE# = VIH Byte 15 25 Word 15 25 ICC7 VCC Active Read-While-Erase Current (Notes 1, 2) CE# = VIL, OE# = VIH Byte 15 25 Word 15 25 ICC8 VCC Active Program-While-Erase-Suspended Current (Notes 2, 5) CE# = VIL, OE# = VIH 10 15 mA IACC ACC Accelerated Program Current, Word or Byte CE# = VIL, OE# = VIH ACC pin 5 10 mA VCC pin 10 15 mA VIL Input Low Voltage –0.5 VCC x 0.2 V VIH Input High Voltage 0.8 x VCC VCC + 0.3 V VHH Voltage for WP#/ACC Sector Protect/Unprotect and Program Acceleration 8.5 9.5 V VID Voltage for Autoselect and Temporary VCC = 1.8–2.2 V Sector Unprotect 9 11 V VOL Output Low Voltage 0.25 V ICC1 VOH1 VOH2 VLKO VCC Active Read Current (Notes 1, 2) Output High Voltage VCC = 1.8–2.2 V IOL = 2.0 mA, VCC = VCC min IOH = –2.0 mA, VCC = VCC min 0.7 VCC IOH = –100 µA, VCC = VCC min VCC–0.1 Low VCC Lock-Out Voltage (Note 5) 1.2 mA mA mA V 1.6 V Notes: 1. The ICC current listed is typically less than 1 mA/MHz, with OE# at VIH. 2. Maximum ICC specifications are tested with VCC = VCCmax. 3. ICC active while Embedded Erase or Embedded Program is in progress. 4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 200 nA. 5. Not 100% tested. 34 Am29DS323D 23480A5 October 10, 2006 D A T A S H E E T DC CHARACTERISTICS Zero-Power Flash 25 Supply Current in mA 20 15 10 5 0 0 500 1000 1500 2000 2500 3000 3500 4000 Time in ns Note: Addresses are switching at 1 MHz Figure 9. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) 12 10 Supply Current in mA 8 2.2 V 6 4 1.8 V 2 0 1 2 3 4 5 Frequency in MHz Note: T = 25 °C Figure 10. October 10, 2006 23480A5 Typical ICC1 vs. Frequency Am29DS323D 35 D A T A S H E E T TEST CONDITIONS Table 16. Test Specifications Test Condition Device Under Test 110 Output Load CL Figure 11. Test Setup Unit 1 TTL gate Output Load Capacitance, CL (including jig capacitance) 30 pF Input Rise and Fall Times 5 ns 0.0–2.0 V V Input timing measurement reference levels 1.0 V Output timing measurement reference levels 1.0 V Input Pulse Levels Note: Diodes are IN3064 or equivalent 120 Key To Switching Waveforms WAVEFORM INPUTS OUTPUTS Steady Changing from H to L Changing from L to H 2.0 V Input Don’t Care, Any Change Permitted Changing, State Unknown Does Not Apply Center Line is High Impedance State (High Z) 1.0 V Measurement Level 1.0 V Output 0.0 V Figure 12. 36 Input Waveforms and Measurement Levels Am29DS323D 23480A5 October 10, 2006 D A T A S H E E T AC CHARACTERISTICS Memory Array Read-Only Operations Parameter JEDEC Std Description Test Setup 110 120 Unit tAVAV tRC Read Cycle Time (Note 1) Min 110 120 ns tAVQV tACC Address to Output Delay CE#, OE# = VIL Max 110 120 ns tELQV tCE Chip Enable to Output Delay OE# = VIL Max 110 120 ns tGLQV tOE Output Enable to Output Delay Max 50 ns tEHQZ tDF Chip Enable to Output High Z (Note 1) Max 16 ns tGHQZ tDF Output Enable to Output High Z (Note 1) Max 16 ns tAXQX tOH Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First Min 0 ns tOEH Output Enable Hold Time, Read Array (Note 1) Min 0 ns Notes: 1. Not 100% tested. 2. See Figure 11 and Table 16 for test specifications. 3. For data polling and toggle bit specifications, see “Data Polling and Toggle Bit” on page 44. tRC Addresses Stable Addresses tACC CE# tRH tRH tDF tOE OE# tOEH WE# tCE tOH HIGH Z HIGH Z Output Valid Outputs RESET# RY/BY# 0V Figure 13. October 10, 2006 23480A5 Read Operation Timings Am29DS323D 37 D A T A S H E E T AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std Description All Speed Options Unit tReady RESET# Pin Low (During Embedded Algorithms) to Read Mode (See Note) Max 20 μs tReady RESET# Pin Low (NOT During Embedded Algorithms) to Read Mode (See Note) Max 500 ns tRP RESET# Pulse Width Min 500 ns tRH Reset High Time Before Read (See Note) Min 200 ns tRPD RESET# Low to Standby Mode Min 20 μs tRB RY/BY# Recovery Time Min 0 ns Note: Not 100% tested. RY/BY# CE#, OE# tRH RESET# tRP tReady Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms tReady RY/BY# tRB CE#, OE# RESET# tRP Figure 14. 38 Reset Timings Am29DS323D 23480A5 October 10, 2006 D A T A S H E E T AC CHARACTERISTICS Word/Byte Configuration (BYTE#) Parameter JEDEC Std Description 110 120 Unit tELFL/tELFH CE# to BYTE# Switching Low or High Max 5 ns tFLQZ BYTE# Switching Low to Output HIGH Z Max 40 ns tFHQV BYTE# Switching High to Output Active Min 110 120 ns CE# OE# BYTE# BYTE# Switching from word to byte mode tELFL Data Output (DQ0–DQ14) DQ0–DQ14 Address Input DQ15 Output DQ15/A-1 Data Output (DQ0–DQ7) tFLQZ tELFH BYTE# BYTE# Switching from byte to word mode Data Output (DQ0–DQ7) DQ0–DQ14 Address Input DQ15/A-1 Data Output (DQ0–DQ14) DQ15 Output tFHQV Figure 15. BYTE# Timings for Read Operations CE# The falling edge of the last WE# signal WE# BYTE# tSET (tAS) tHOLD (tAH) Note: Refer to the Erase/Program Operations table for tAS and tAH specifications. Figure 16. October 10, 2006 23480A5 BYTE# Timings for Write Operations Am29DS323D 39 D A T A S H E E T AC CHARACTERISTICS Erase and Program Operations Parameter JEDEC Std Description tAVAV tWC Write Cycle Time (Note 1) Min tAVWL tAS Address Setup Time Min 0 ns tASO Address Setup Time to OE# low during toggle bit polling Min 15 ns tAH Address Hold Time Min 50 ns tAHT Address Hold Time From CE# or OE# high during toggle bit polling Min 0 ns tDVWH tDS Data Setup Time Min 50 ns tWHDX tDH Data Hold Time Min 0 ns tOEPH Output Enable High during toggle bit polling Min 20 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 50 ns tWHDL tWPH Write Pulse Width High Min 30 ns tSR/W Latency Between Read and Write Operations Min 0 ns Byte Typ 9 Word Typ 13 tWLAX 110 120 Unit 110 120 ns tWHWH1 tWHWH1 Programming Operation (Note 2) tWHWH1 tWHWH1 Accelerated Programming Operation, Word or Byte (Note 2) Typ 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 2 sec tVCS VCC Setup Time (Note 1) Min 50 µs tRB Write Recovery Time from RY/BY# Min 0 ns Program/Erase Valid to RY/BY# Delay Min 90 ns tBUSY µs Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. 40 Am29DS323D 23480A5 October 10, 2006 D A T A S H E E T AC CHARACTERISTICS Program Command Sequence (last two cycles) tAS tWC Addresses Read Status Data (last two cycles) 555h PA PA PA tAH CE# tCH OE# tWHWH1 tWP WE# tWPH tCS tDS tDH PD A0h Data Status tBUSY DOUT tRB RY/BY# VCC tVCS Notes: 1. PA = program address, PD = program data, DOUT is the true data at the program address. 2. Illustration shows device in word mode. Figure 17. Program Operation Timings VHH WP#/ACC VIL or VIH VIL or VIH tVHH Figure 18. October 10, 2006 23480A5 tVHH Accelerated Program Timing Diagram Am29DS323D 41 D A T A S H E E T AC CHARACTERISTICS Erase Command Sequence (last two cycles) tAS tWC 2AAh Addresses Read Status Data VA SA VA 555h for chip erase tAH CE# tCH OE# tWP WE# tWPH tCS tWHWH2 tDS tDH Data 55h In Progress 30h Complete 10 for Chip Erase tBUSY tRB RY/BY# tVCS VCC Notes: 1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”). 2. These waveforms are for the word mode. Figure 19. 42 Chip/Sector Erase Operation Timings Am29DS323D 23480A5 October 10, 2006 D A T A S H E E T AC CHARACTERISTICS Addresses tWC tWC tRC Valid PA Valid RA tWC Valid PA Valid PA tAH tCPH tACC tCE CE# tCP tOE OE# tOEH tGHWL tWP WE# tWPH tDF tDS tOH tDH Valid Out Valid In Data Valid In Valid In tSR/W WE# Controlled Write Cycle Figure 20. October 10, 2006 23480A5 Read Cycle CE# Controlled Write Cycles Back-to-back Read/Write Cycle Timings Am29DS323D 43 D A T A S H E E T AC CHARACTERISTICS Data Polling and Toggle Bit Parameter All Speed Options Unit Min 200 ns CE#, OE# = VIL Max 200 ns OE# = VIL Max 200 ns Output Enable to Output Delay Max 50 ns tDF Chip Enable to Output High Z (Note 1) Max 16 ns tGHQZ tDF Output Enable to Output High Z (Note 1) Max 16 ns tAXQX tOH Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First Min 0 ns tOEH Output Enable Hold Time (Note 1) Min 10 ns JEDEC Std Description Test Setup tAVAV tRC Read Cycle Time (Note 1) tAVQV tACC Address to Output Delay tELQV tCE Chip Enable to Output Delay tGLQV tOE tEHQZ Data Polling and Toggle Bit Notes: 1. Not 100% tested. See Figure 11 and Table 16 for test specifications. tRC Addresses VA VA VA tACC tCE CE# tCH tOE OE# tOEH tDF WE# tOH High Z DQ7 Complement Complement DQ0–DQ6 Status Data Status Data Valid Data True High Z Valid Data True tBUSY RY/BY# Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. Figure 21. Data# Polling Timings (During Embedded Algorithms) 44 Am29DS323D 23480A5 October 10, 2006 D A T A S H E E T AC CHARACTERISTICS tAHT tAS Addresses tAHT tASO CE# tCEPH tOEH WE# tOEPH OE# tDH DQ6/DQ2 tOE Valid Data Valid Status Valid Status Valid Status (first read) (second read) (stops toggling) Valid Data RY/BY# Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle Figure 22. Enter Embedded Erasing WE# Erase Suspend Erase Toggle Bit Timings (During Embedded Algorithms) Enter Erase Suspend Program Erase Suspend Read Erase Suspend Program Erase Resume Erase Suspend Read Erase Erase Complete DQ6 DQ2 Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6. Figure 23. DQ2 vs. DQ6 October 10, 2006 23480A5 Am29DS323D 45 D A T A S H E E T AC CHARACTERISTICS Temporary Sector/Sector Block Unprotect Parameter JEDEC Std Description All Speed Options Unit tVIDR VID Rise and Fall Time (See Note) Min 500 ns tVHH VHH Rise and Fall Time (See Note) Min 500 ns tRSP RESET# Setup Time for Temporary Sector/Sector Block Unprotect Min 4 μs tRRB RESET# Hold Time from RY/BY# High for Temporary Sector/Sector Block Unprotect Min 4 μs Note: Not 100% tested. VID RESET# VID VSS, VIL, or VIH VSS, VIL, or VIH tVIDR tVIDR Program or Erase Command Sequence CE# WE# tRRB tRSP RY/BY# Figure 24. Temporary Sector/Sector Block Unprotect Timing Diagram 46 Am29DS323D 23480A5 October 10, 2006 D A T A S H E E T AC CHARACTERISTICS VID VIH RESET# SA, A6, A1, A0 Valid* Valid* Sector/Sector Block Protect or Unprotect Data 60h 60h Valid* Verify 40h Status Sector/Sector Block Protect: 150 µs, Sector/Sector Block Unprotect: 15 ms 1 µs CE# WE# OE# * For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0. Figure 25. October 10, 2006 23480A5 Sector/Sector Block Protect/Unprotect Timing Diagram Am29DS323D 47 D A T A S H E E T AC CHARACTERISTICS Alternate CE# Controlled Erase and Program Operations Parameter JEDEC Std Description 110 120 Unit tAVAV tWC Write Cycle Time (Note 1) Min 110 120 ns tAVWL tAS Address Setup Time Min 0 ns tELAX tAH Address Hold Time Min 50 ns tDVEH tDS Data Setup Time Min 50 ns tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tELEH tCP CE# Pulse Width Min 50 ns tEHEL tCPH CE# Pulse Width High Min 30 ns Typ 9 tWHWH1 Programming Operation (Note 2) Byte tWHWH1 Word Typ 13 tWHWH1 tWHWH1 Accelerated Programming Operation, Word or Byte (Note 2) Typ 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 2 sec µs Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. 48 Am29DS323D 23480A5 October 10, 2006 D A T A S H E E T AC CHARACTERISTICS 555 for program 2AA for erase PA for program SA for sector erase 555 for chip erase Data# Polling Addresses PA tWC tAS tAH tWH WE# tGHEL OE# tWHWH1 or 2 tCP CE# tWS tCPH tBUSY tDS tDH DQ7# Data tRH A0 for program 55 for erase DOUT PD for program 30 for sector erase 10 for chip erase RESET# RY/BY# Notes: 1. Figure indicates last two bus cycles of a program or erase operation. 2. PA = program address, SA = sector address, PD = program data. 3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device. 4. Waveforms are for the word mode. Figure 26. October 10, 2006 23480A5 Alternate CE# Controlled Write (Erase/Program) Operation Timings Am29DS323D 49 D A T A S H E E T ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time Typ (Note 1) Max (Note 2) Unit Comments 2 15 sec Excludes 00h programming prior to erasure (Note 4) 130 sec Byte Program Time 9 270 µs Word Program Time 13 390 µs Accelerated Byte/Word Program Time 7 210 µs Byte Mode 54 160 Word Mode 27 81 Chip Program Time (Note 3) Excludes system level overhead (Note 5) sec Notes: 1. Typical program and erase times assume the following conditions: 25°C, 2.0 V VCC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 2.2 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 14 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles. LATCHUP CHARACTERISTICS Description Min Max Input voltage with respect to VSS on all pins except I/O pins (including A9, OE#, and RESET#) –1.0 V 11 V Input voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V –100 mA +100 mA VCC Current Note: Includes all pins except VCC. Test conditions: VCC = 2.0 V, one pin at a time. DATA RETENTION Parameter Description Minimum Pattern Data Retention Time 50 Am29DS323D Test Conditions Min Unit 150°C 10 Years 125°C 20 Years 23480A5 October 10, 2006 D A T A S H E E T PHYSICAL DIMENSIONS FBD048—48-ball Fine-Pitch Ball Grid Array (FBGA) 6 x 12 mm package Dwg rev AF; 1/2000 xFBD 048 6.00 mm x 12.00 mm PACKAGE 1.20 0.20 0.94 0.84 12.00 BSC 6.00 BSC 5.60 BSC 4.00 BSC 8 6 0.25 48 0.30 0.35 0.80 BSC 0.40 BSC October 10, 2006 23480A5 Am29DS323D 51 D A T A S H E E T PHYSICAL DIMENSIONS TS 048—48-Pin Standard TSOP Dwg rev AA; 10/99 52 Am29DS323D 23480A5 October 10, 2006 D A T A REVISION SUMMARY Revision A (December 1, 1999) S H E E T Erase and Program Performance Changed the following specifications: typical and maximum byte program time, typical and maximum word program time, typical and maximum chip program time for both word and byte modes. Released page 1 only. Publication Number 23480, Revision A (January 25, 2000) Released as full data sheet. The publication number has been changed from 22394 to 23480. Revision A+2 (November 1, 2000) Revision A+1 (June 16, 2000) Global Global The 100 ns speed option has been replaced by a 110 ns option. The data sheet status has changed from “Advance Information” to “Preliminary.” Deleted “contact AMD for availability” notes for TSOP package. Added TSOP valid combinations to the Ordering Information section. In Tables 7 and 14, changed data for SecSi Sector Factory Protect to 85h (factory locked) and 05h (not factory locked). Revision A+3 (November 22, 2000) Removed Preliminary status from document. Ordering Information In the ordering part number, changed FBGA package code to WM. For 6 x 12 FBGA packages only, the physical marking for regulated voltage range devices is now “Q” and the physical marking for full voltage range devices is now “U.” Ordering Information Optional processing: Deleted the burn-in option. Table 4, Secured Silicon Sector Addresses for Top Boot Devices. Table 6, Secured Silicon Sector Addresses for Bottom Boot Devices: Added ESN addresses to tables. Factory Locked: Secured Silicon Sector Programmed and Protected at the Factory: Corrected ESN address range. Autoselect Command Sequence: Added table to clarify explanation of autoselect codes. DC Characteristics table CMOS Compatible: Changed maximum specification on VLKO to 1.6 V. Revision A+4 (January 25, 2005) AC Characteristics—Read-Only Operations Revision A5 (October 10, 2006) Changed tDF to 16 ns from 30 ns. Global AC Characteristics—Data Polling and Toggle Bit Added table. Timing specifications for data polling and toggle bit operations differ from those for memory array read operations. Changed to final datasheet status. Added retired product notice on cover page and first page of data sheet. Added cover page and colophon. Connection Diagrams AC Characteristics—Erase and Program Operations table; Alternate CE# Controlled Erase and Program Operations table Corrected column labeling on ball grid drawing. Changed typical and maximum byte and word programming times to match changes in erase and program performance table. October 10, 2006 23480A5 Am29DS323D 53 D A T A S H E E T Colophon The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products. Trademarks Copyright © 1998–2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. Copyright © 2006 Spansion Inc. All Rights Reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof are trademarks of Spansion Inc. Other names are for informational purposes only and may be trademarks of their respective owners. 54 Am29DS323D 23480A5 October 10, 2006