DIODES DMMT3906

DMMT3906
MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Epitaxial Planar Die Construction
Intrinsically Matched PNP Pair (Note 1)
Small Surface Mount Package
2% hFE Matched Tolerance
1% hFE Matched Tolerance On Request
SOT-26
A
B1,2
C1
C2
B C
Mechanical Data
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Case: SOT-26, Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K3Q
Weight: 0.015 grams (approx.)
Ordering Information: See Below
Maximum Ratings
E1
E2
NC
H
K
M
J
D
L
F
Dim
A
Min
Max
Typ
0.35
0.50
0.38
B
1.50
1.70
1.60
C
2.70
3.00
2.80
D
¾
¾
0.95
F
¾
¾
0.55
H
2.90
3.10
3.00
J
0.013 0.10
0.05
K
1.00
1.10
1.30
L
0.35
0.55
0.40
M
0.10
0.20
0.15
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
DMMT3906
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current - Continuous
IC
-200
mA
Power Dissipation (Note 2)
Pd
225
mW
RqJA
556
°C/W
Tj, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage and Temperature Range
Ordering Information
Notes:
(Note 3)
Device
Packaging
Shipping
DMMT3906-7
SOT-26
3000/Tape & Reel
1. Built with adjacent die from a single wafer.
2. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K3Q = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
YM
NEW PRODUCT
Features
K3Q
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
Code
J
K
L
M
N
O
P
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30293 Rev. A-2
1 of 3
DMMT3906
NEW PRODUCT
Electrical Characteristics
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-40
¾
V
IC = -10mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
¾
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
¾
V
IE = -10mA, IC = 0
ICEX
¾
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
IBL
¾
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
hFE
60
80
100
60
30
¾
¾
300
¾
¾
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
-0.25
-0.40
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base- Emitter Saturation Voltage
VBE(SAT)
-0.65
¾
-0.85
-0.95
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Output Capacitance
Cobo
¾
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
¾
10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
2.0
12
kW
Voltage Feedback Ratio
hre
0.1
10
x 10-4
Small Signal Current Gain
hfe
100
400
¾
Output Admittance
hoe
3.0
60
mS
Current Gain-Bandwidth Product
fT
250
¾
MHz
VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure
NF
¾
4.0
dB
VCE = -5.0V, IC = -100mA,
RS = 1.0kW, f = 1.0kHz
Delay Time
td
¾
35
ns
Rise Time
tr
¾
35
ns
Storage Time
ts
¾
225
ns
Fall Time
tf
¾
75
ns
OFF CHARACTERISTICS (Note 4)
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain (Note 5)
¾
IC = -100µA, VCE =
IC = -1.0mA, VCE =
IC = -10mA, VCE =
IC = -50mA, VCE =
IC = -100mA, VCE =
-1.0V
-1.0V
-1.0V
-1.0V
-1.0V
SMALL SIGNAL CHARACTERISTICS
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Notes:
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
4. Short duration test pulse used to minimize self-heating effect.
5. The DC current gain, hFE, is matched at IC = -10mA and VCE = -1.0V with typical matched tolerances of 1% and maximum of 2%.
DS30293 Rev. A-2
2 of 3
DMMT3906
f = 1MHz
CIBO, INPUT CAPACITANCE (pF)
COBO, OUTPUT CAPACITANCE (pF)
PD, POWER DISSIPATION (mW)
350
300
250
200
150
100
10
Cibo
50
0
0
25
50
75
100
125
150
175
200
1
100
10
VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
1000
10
VCE(SAT), COLLECTOR-EMITTER (V)
SATURATION VOLTAGE
hFE, DC CURRENT GAIN
Cobo
1
0.1
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
TA = 125°C
100
TA = +25°C
TA = -25°C
10
IC
IB = 10
1
0.1
VCE = 1.0V
0.01
1
1
0.1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs
Collector Current
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.0
VBE(SAT), BASE-EMITTER (V)
SATURATION VOLTAGE
NEW PRODUCT
100
0.9
0.8
0.7
0.6
IC
IB = 10
0.5
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
DS30293 Rev. A-2
3 of 3
DMMT3906