DMMT3906 MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR · · · · · Epitaxial Planar Die Construction Intrinsically Matched PNP Pair (Note 1) Small Surface Mount Package 2% hFE Matched Tolerance 1% hFE Matched Tolerance On Request SOT-26 A B1,2 C1 C2 B C Mechanical Data · · · · · · · Case: SOT-26, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K3Q Weight: 0.015 grams (approx.) Ordering Information: See Below Maximum Ratings E1 E2 NC H K M J D L F Dim A Min Max Typ 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ¾ ¾ 0.95 F ¾ ¾ 0.55 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.10 1.30 L 0.35 0.55 0.40 M 0.10 0.20 0.15 All Dimensions in mm @ TA = 25°C unless otherwise specified Characteristic Symbol DMMT3906 Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous IC -200 mA Power Dissipation (Note 2) Pd 225 mW RqJA 556 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 2) Operating and Storage and Temperature Range Ordering Information Notes: (Note 3) Device Packaging Shipping DMMT3906-7 SOT-26 3000/Tape & Reel 1. Built with adjacent die from a single wafer. 2. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K3Q = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM NEW PRODUCT Features K3Q Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 Code J K L M N O P Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30293 Rev. A-2 1 of 3 DMMT3906 NEW PRODUCT Electrical Characteristics Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -40 ¾ V IC = -10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -10mA, IC = 0 ICEX ¾ -50 nA VCE = -30V, VEB(OFF) = -3.0V IBL ¾ -50 nA VCE = -30V, VEB(OFF) = -3.0V hFE 60 80 100 60 30 ¾ ¾ 300 ¾ ¾ Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.25 -0.40 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Base- Emitter Saturation Voltage VBE(SAT) -0.65 ¾ -0.85 -0.95 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Output Capacitance Cobo ¾ 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ¾ 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 2.0 12 kW Voltage Feedback Ratio hre 0.1 10 x 10-4 Small Signal Current Gain hfe 100 400 ¾ Output Admittance hoe 3.0 60 mS Current Gain-Bandwidth Product fT 250 ¾ MHz VCE = -20V, IC = -10mA, f = 100MHz Noise Figure NF ¾ 4.0 dB VCE = -5.0V, IC = -100mA, RS = 1.0kW, f = 1.0kHz Delay Time td ¾ 35 ns Rise Time tr ¾ 35 ns Storage Time ts ¾ 225 ns Fall Time tf ¾ 75 ns OFF CHARACTERISTICS (Note 4) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain (Note 5) ¾ IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -50mA, VCE = IC = -100mA, VCE = -1.0V -1.0V -1.0V -1.0V -1.0V SMALL SIGNAL CHARACTERISTICS VCE = 10V, IC = 1.0mA, f = 1.0kHz SWITCHING CHARACTERISTICS Notes: VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA 4. Short duration test pulse used to minimize self-heating effect. 5. The DC current gain, hFE, is matched at IC = -10mA and VCE = -1.0V with typical matched tolerances of 1% and maximum of 2%. DS30293 Rev. A-2 2 of 3 DMMT3906 f = 1MHz CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 10 Cibo 50 0 0 25 50 75 100 125 150 175 200 1 100 10 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage 1000 10 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE hFE, DC CURRENT GAIN Cobo 1 0.1 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature TA = 125°C 100 TA = +25°C TA = -25°C 10 IC IB = 10 1 0.1 VCE = 1.0V 0.01 1 1 0.1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.0 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE NEW PRODUCT 100 0.9 0.8 0.7 0.6 IC IB = 10 0.5 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current DS30293 Rev. A-2 3 of 3 DMMT3906