SPICE MODEL: MMDT4126 MMDT4126 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching B1 C2 E1 Ultra-Small Surface Mount Package B C Lead Free/RoHS Compliant (Note 3) B2 E2 C1 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal G H Mechanical Data · · Case: SOT-363 · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · · SOT-363 A Complementary NPN Type Available (MMDT4124) K Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 0° 8° M J D F L Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). C2 B1 E1 All Dimensions in mm Terminal Connections: See Diagram Marking (See Page 2): K2B E2 Ordering & Date Code Information: See Page 2 B2 C1 Weight: 0.006 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol MMDT4126 Unit Collector-Base Voltage Characteristic VCBO -25 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -4.0 V Collector Current - Continuous (Note 1) IC -200 mA Power Dissipation (Note 1, 2) Pd 200 mW RqJA 625 K/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead. DS30160 Rev. 8 - 2 1 of 4 www.diodes.com MMDT4126 ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -25 ¾ V IC = -10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -25 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage OFF CHARACTERISTICS (Note 4) V(BR)EBO -4.0 ¾ V IE = -10mA, IC = 0 Collector Cutoff Current ICBO ¾ -50 nA VCB = -20V, IE = 0V Emitter Cutoff Current IEBO ¾ -50 nA VEB = -3.0V, IC = 0V hFE 120 60 360 ¾ ¾ IC = -2.0mA, VCE = -1.0V IC = -50mA, VCE = -1.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.40 V IC = -50mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(SAT) ¾ -0.95 V IC = -50mA, IB = -5.0mA Output Capacitance Cobo ¾ 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ¾ 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = -1.0V, IC = -2.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz ON CHARACTERISTICS (Note 4) DC Current Gain SMALL SIGNAL CHARACTERISTICS Small Signal Current Gain hfe 120 480 ¾ Current Gain-Bandwidth Product fT 250 ¾ MHz Noise Figure NF ¾ 4.0 dB Ordering Information Notes: VCE = -5.0V, IC = -100mA, RS = 1.0kW, f = 1.0kHz (Note 5) Device Packaging Shipping MMDT4126-7-F SOT-363 3000/Tape & Reel 4. Short duration test pulse used to minimize self-heating effect. 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM K2B K2B = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM K2B Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30160 Rev. 8 - 2 2 of 4 www.diodes.com MMDT4126 100 f = 1MHz CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 10 Cibo 50 Cobo 1 0.1 0 0 25 50 75 100 125 150 200 175 100 10 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 10 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN 1 TA = 125°C 100 TA = +25°C TA = -25°C 10 IC IB = 10 1 0.1 VCE = 1.0V 0.01 1 1 0.1 10 100 1 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 1.0 0.9 0.8 0.7 0.6 IC IB = 10 0.5 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current DS30160 Rev. 8 - 2 3 of 4 www.diodes.com MMDT4126 IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated. DS30160 Rev. 8 - 2 4 of 4 www.diodes.com MMDT4126