DIODES BC817

BC817-16 / -25 / -40
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
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Features
Mechanical Data
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Ideally Suited for Automated Insertion
Epitaxial Planar Die Construction
For Switching, AF Driver and Amplifier Applications
Complementary PNP Types Available (BC807)
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Pin Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
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C
E
B
Top View
Maximum Ratings
Device Schematic
@TA = 25°C unless otherwise specified
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Symbol
VCEO
VEBO
IC
ICM
IEM
Value
45
5.0
800
1000
1000
Unit
V
V
mA
mA
mA
Symbol
PD
RθSB
RθJA
TJ, TSTG
Value
310
320
403
-65 to +150
Unit
mW
°C/W
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation at TSB = 50°C (Note 1)
Thermal Resistance, Junction to Substrate Backside (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic (Note 2)
Current Gain Group -16
-25
-40
DC Current Gain
Current Gain Group -16
-25
-40
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(SAT)
VBE
Min
100
160
250
60
100
170
—
—
Collector-Emitter Cutoff Current
ICES
—
Emitter-Base Cutoff Current
IEBO
—
Max
250
400
600
—
—
—
0.7
1.2
100
5.0
100
fT
100
—
MHz
CCBO
—
12
pF
Gain Bandwidth Product
Collector-Base Capacitance
Notes:
1.
2.
3.
4.
Symbol
hFE
Unit
Test Condition
—
VCE = 1.0V, IC = 100mA
—
VCE = 1.0V, IC = 300mA
V
V
nA
µA
nA
IC = 500mA, IB = 50mA
VCE = 1.0V, IC = 300mA
VCE = 45V
VCE = 25V, Tj = 150°C
VEB = 4.0V
VCE = 5.0V, IC = 10mA,
f = 50MHz
VCB = 10V, f = 1.0MHz
2
Device mounted on Ceramic Substrate 0.7mm; 2.5cm area.
Short duration pulse test used to minimize self-heating effect.
No purposefully added lead. Halogen and Antimony Free.
Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BC817-16 / -25 / -40
Document number: DS11107 Rev. 18 - 2
1 of 4
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April 2009
© Diodes Incorporated
BC817-16 / -25 / -40
500
IC, COLLECTOR CURRENT (mA)
PD, POWER DISSIPATION (mW)
400
300
200
100
400
300
200
100
RθSB = 320°C/W
0
0
0
100
200
TSB, SUBSTRATE TEMPERATURE (° C)
Fig. 1 Power Dissipation vs. Substrate Temperature (Note 1)
1,000
hFE, DC CURRENT GAIN
60
40
2
VCE = 1V
150° C
T A = 25° C
-50° C
100
20
0
10
0
10
20
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 3 Typical Collector Current
vs. Collector-Emitter Voltage
0.5
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
1
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
80
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical DC Current Gain vs. Collector Current
0.1
1,000
typical
limits
at TA = 25° C
fT, GAIN-BANDWIDTH PRODUCT (MHz)
IC, COLLECTOR CURRENT (mA)
100
0
0.4
IC / IB = 10
0.3
0.2
25° C
0.1
150° C
-50° C
100
10
0
0.1
100
1,000
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
BC817-16 / -25 / -40
Document number: DS11107 Rev. 18 - 2
2 of 4
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1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 6 Gain-Bandwidth Product vs. Collector Current
April 2009
© Diodes Incorporated
BC817-16 / -25 / -40
Ordering Information
(Note 5)
Part Number
BC817-xx-7-F
Case
SOT-23
Packaging
3000/Tape & Reel
*xx = gain group, e.g. BC817-16-7-F.
Notes:
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year
1998
Code
J
Month
Code
1999
K
2000
L
Jan
1
Feb
2
2001
M
2002
N
Mar
3
2003
P
YM
K6x
K6x = Product Type Marking Code:
K6A = BC817-16
K6B = BC817-25
K6C = BC817-40
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
2004 2005
R
S
Apr
4
May
5
2006
T
2007
U
Jun
6
Jul
7
2008
V
2009
W
Aug
8
2010
X
2011
Y
Sep
9
2012
Z
Oct
O
2013
A
Nov
N
2014
B
2015
C
Dec
D
Package Outline Dimensions
A
B C
H
K
M
K1
D
J
F
L
G
SOT-23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
α
All Dimensions in mm
Suggested Pad Layout
Y
Z
C
X
BC817-16 / -25 / -40
Document number: DS11107 Rev. 18 - 2
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
2.0
C
1.35
E
E
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April 2009
© Diodes Incorporated
BC817-16 / -25 / -40
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
BC817-16 / -25 / -40
Document number: DS11107 Rev. 18 - 2
4 of 4
www.diodes.com
April 2009
© Diodes Incorporated