DDTA (R2-ONLY SERIES) E PNP PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features · · Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistor, R2 only · A C · · · · B C TOP VIEW Mechanical Data · · · · SOT-523 B Case: SOT-523, Molded Plastic Case material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: Date Code and Marking Code (See Diagrams & Page 2) Weight: 0.002 grams (approx.) Ordering Information (See Page 2) E G H K M N J D L C B P/N DDTA114GE DDTA124GE DDTA144GE DDTA115GE Maximum Ratings R2 (NOM) MARKING 10KW 22KW 47KW 100KW P26 P27 P28 P29 R2 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D ¾ ¾ 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 a 0° 8° ¾ All Dimensions in mm E SCHEMATIC DIAGRAM @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC (Max) -100 mA Power Dissipation Pd 150 mW RqJA 833 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage and Temperature Range Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. DS30320 Rev. 2 - 2 1 of 3 DDTA (R2-ONLY SERIES) E NEW PRODUCT Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO -50 ¾ ¾ V IC = -50mA Collector-Emitter Breakdown Voltage BVCEO -50 ¾ ¾ V IC = -1mA Emitter-Base Breakdown Voltage BVEBO 5 ¾ ¾ V IE = -720mA, DDTA114GE IE = -330mA, DDTA124GE IE = -160mA, DDTA144GE IE = -72mA, DDTA115GE ICBO ¾ ¾ -0.5 mA VCB = -50V IEBO -300 -140 -65 -30 ¾ -580 -260 -130 -58 mA VEB = -4V VCE(sat) ¾ ¾ -0.3 V IC = -10mA, IB = -0.5mA hFE 30 56 68 82 ¾ ¾ ¾ IC = -5mA, VCE = -5V DR2 -30 ¾ +30 % Collector Cutoff Current DDTA114GE DDTA124GE DDTA144GE DDTA115GE Emitter Cutoff Current Collector-Emitter Saturation Voltage DDTA114GE DDTA124GE DDTA144GE DDTA115GE DC Current Transfer Ratio Bleeder Resistor (R2) Tolerance ¾ fT Gain-Bandwidth Product* ¾ 250 MHz Test Condition ¾ VCE = -10V, IE = 5mA, f = 100MHz * Transistor - For Reference Only Ordering Information (Note 2) Notes: Device Packaging Shipping DDTA114GE-7 SOT-523 3000/Tape & Reel DDTA124GE-7 SOT-523 3000/Tape & Reel DDTA144GE-7 SOT-523 3000/Tape & Reel DDTA115GE-7 SOT-523 3000/Tape & Reel 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information XXXYM XXX = Product Type Marking Code (See Page 1, e.g. P26 = DDTA114GE) YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 Code N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30320 Rev. 2 - 2 2 of 3 DDTA (R2-ONLY SERIES) E VCE(SAT), MAXIMUM COLLECTOR VOLTAGE (V) PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 -50 50 0 150 100 1 IC/IB = 10 75°C 0.1 -25°C 25°C 0.01 0.001 0 40 30 50 IE = 0V COB, CAPACITANCE (pF) hFE, DC CURRENT GAIN (NORMALIZED) VCE = 10 75°C 100 25°C -25°C 10 8 6 4 2 0 10 1000 20 12 1000 1 10 IC, COLLECTOR CURRENT (mA) Fig. 2 VCE(SAT) vs. IC TA, AMBIENT TEMPERATURE (°C) Fig. 1, Derating Curve 10 IC, COLLECTOR CURRENT (mA) Fig. 3 DC Current Gain 0 5 100 10 15 20 30 25 VR, REVERSE BIAS VOLTAGE (V) Fig. 4 Output Capacitance 10 75°C VO = 0.2 VO = 5V 100 Vin, INPUT VOLTAGE (V) IC, COLLECTOR CURRENT (mA) NEW PRODUCT TYPICAL CURVES - DDTA114GE 25°C 10 -25°C 1 0.1 75°C -25°C 25°C 1 0.01 0.001 0 1 2 3 4 5 6 7 8 9 0.1 10 0 Vin, INPUT VOLTAGE (V) Fig. 5 Collector Current Vs. Input Voltage DS30320 Rev. 2 - 2 100 200 300 400 500 600 700 IC, COLLECTOR CURRENT (mA) Fig. 6 Input Voltage vs. Collector Current 3 of 3 DDTA (R2-ONLY SERIES) E