ONSEMI LM285D-2.5

LM285, LM385B
Micropower Voltage
Reference Diodes
The LM285/LM385 series are micropower two−terminal bandgap
voltage regulator diodes. Designed to operate over a wide current
range of 10 mA to 20 mA, these devices feature exceptionally low
dynamic impedance, low noise and stable operation over time and
temperature. Tight voltage tolerances are achieved by on−chip
trimming. The large dynamic operating range enables these devices to
be used in applications with widely varying supplies with excellent
regulation. Extremely low operating current make these devices ideal
for micropower circuitry like portable instrumentation, regulators and
other analog circuitry where extended battery life is required.
The LM285/LM385 series are packaged in a low cost TO−226
plastic case and are available in two voltage versions of 1.235 V and
2.500 V as denoted by the device suffix (see Ordering Information
table). The LM285 is specified over a −40°C to +85°C temperature
range while the LM385 is rated from 0°C to +70°C.
The LM385 is also available in a surface mount plastic package in
voltages of 1.235 V and 2.500 V.
Features
•
•
•
•
•
•
Operating Current from 10 mA to 20 mA
1.0%, 1.5%, 2.0% and 3.0% Initial Tolerance Grades
Low Temperature Coefficient
1.0 W Dynamic Impedance
Surface Mount Package Available
Pb−Free Packages are Available
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MARKING
DIAGRAMS
8
8
1
1
LMy85
Z−xxx
ALYWWG
G
TO−92
(TO−226)
Z SUFFIX
CASE 29
N.C.
Cathode
Anode
xxx
= 1.2 or 2.5
y
= 2 or 3
z
= 1 or 2
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W, WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Cathode
10 k
360 k
Open
for 1.235 V
600 k
y85−z
ALYW
G
SOIC−8
D SUFFIX
CASE 751
(Bottom View)
3
2
1
N.C.
1
8
Cathode
N.C.
2
7
N.C.
N.C.
3
6
N.C.
Anode
4
5
N.C.
8.45 k
Standard Application
74.3 k
Open
for 2.5 V
600 k
1.5 V
Battery
425 k
500 W
600 k
100 k
Anode
November, 2005 − Rev. 7
−
3.3 k
1.235 V
LM385−1.2
ORDERING INFORMATION
Figure 1. Representative Schematic Diagram
© Semiconductor Components Industries, LLC, 2005
+
1
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
LM285/D
LM285, LM385B
MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Value
Unit
Reverse Current
Rating
IR
30
mA
Forward Current
IF
10
mA
Operating Ambient Temperature Range
°C
TA
LM285
LM385
−40 to +85
0 to +70
Operating Junction Temperature
TJ
+150
°C
Storage Temperature Range
Tstg
−65 to + 150
°C
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
ESD
V
4000
400
2000
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
LM285−1.2
Characteristic
Symbol
Reverse Breakdown Voltage (IRmin v IR v 20 mA)
LM285−1.2/LM385B−1.2
TA = Tlow to Thigh (Note 1)
LM385−1.2
TA = Tlow to Thigh (Note 1)
V(BR)R
Minimum Operating Current
TA = 25°C
TA = Tlow to Thigh (Note 1)
Reverse Breakdown Voltage Change with Current
IRmin v IR v 1.0 mA, TA = +25°C
TA = Tlow to Thigh (Note 1)
1.0 mA v IR v 20 mA, TA = +25°C
TA = Tlow to Thigh (Note 1)
Reverse Dynamic Impedance
IR = 100 mA, TA = +25°C
Average Temperature Coefficient
10 mA v IR v 20 mA, TA = Tlow to Thigh (Note 1)
Max
Min
Typ
Max
1.223
1.200
−
−
1.235
−
−
−
1.247
1.270
−
−
1.223
1.210
1.205
1.192
1.235
−
1.235
−
1.247
1.260
1.260
1.273
−
−
8.0
−
10
20
−
8.0
−
15
20
−
−
−
−
−
−
−
−
1.0
1.5
10
20
−
−
−
−
−
−
−
−
1.0
1.5
20
25
−
0.6
−
−
0.6
−
−
80
−
−
80
−
−
60
−
−
60
−
−
20
−
−
20
−
2.462
2.415
−
−
2.5
−
−
−
2.538
2.585
−
−
2.462
2.436
2.425
2.400
2.5
−
2.5
−
2.538
2.564
2.575
2.600
−
−
13
−
20
30
−
−
13
−
20
30
mA
mV
W
DV(BR)/DT
S
Unit
V
Z
Long Term Stability
IR = 100 mA, TA = +25°C ± 0.1°C
1. Tlow
Thigh
Tlow
Thigh
Typ
DV(BR)R
n
Minimum Operating Current
TA = 25°C
TA = Tlow to Thigh (Note 1)
Min
IRmin
Wideband Noise (RMS)
IR = 100 mA, 10 Hz v f v 10 kHz
Reverse Breakdown Voltage (IRmin v IR v 20 mA)
LM285−2.5/LM385B−2.5
TA = Tlow to Thigh (Note 1)
LM385−2.5
TA = Tlow to Thigh (Note 1)
LM385−1.2/LM385B−1.2
ppm/°C
mV
ppm/kHR
V(BR)R
V
IRmin
= −40°C for LM285−1.2, LM285−2.5
= +85°C for LM285−1.2, LM285−2.5
= 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
= +70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
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2
mA
LM285, LM385B
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
LM285−1.2
Characteristic
Symbol
Reverse Breakdown Voltage Change with Current
IRmin v IR v 1.0 mA, TA = +25°C
TA = Tlow to Thigh (Note 2)
1.0 mA v IR v 20 mA, TA = +25°C
TA = Tlow to Thigh (Note 2)
DV(BR)R
Reverse Dynamic Impedance
IR = 100 mA, TA = +25°C
Average Temperature Coefficient
20 mA v IR v 20 mA, TA = Tlow to Thigh (Note 2)
Typ
Max
Min
Typ
Max
−
−
−
−
−
−
−
−
1.0
1.5
10
20
−
−
−
−
−
−
−
−
2.0
2.5
20
25
−
0.6
−
−
0.6
−
−
80
−
−
80
−
−
120
−
−
120
−
−
20
−
−
20
−
W
DV(BR)/DT
n
Long Term Stability
IR = 100 mA, TA = +25°C ± 0.1°C
S
Unit
mV
Z
Wideband Noise (RMS)
IR = 100 mA, 10 Hz v f v 10 kHz
2. Tlow
Thigh
Tlow
Thigh
LM385−1.2/LM385B−1.2
Min
ppm/°C
mV
ppm/kHR
= −40°C for LM285−1.2, LM285−2.5
= +85°C for LM285−1.2, LM285−2.5
= 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
= +70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
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3
LM285, LM385B
ΔV(BR)R, REVERSE VOLTAGE CHANGE (mV)
TYPICAL PERFORMANCE CURVES FOR LM285−1.2/385−1.2/385B−1.2
IR, REVERSE CURRENT (A)
μ
100
10
TA = +85°C
1.0
+25 °C
0.1
0
0.2
−40 °C
0.4
0.6
0.8
1.0
V(BR), REVERSE VOLTAGE (V)
1.2
1.4
10
8.0
TA = +85°C
6.0
+25 °C
4.0
−40 °C
2.0
0
−2.0
0.01
0.1
Figure 2. Reverse Characteristics
1.0
10
IR, REVERSE CURRENT (mA)
100
Figure 3. Reverse Characteristics
1.2
V(BR)R, REVERSE VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
1.250
1.0
TA = −40°C
0.8
0.6
+25 °C
0.4
+85 °C
0.2
0
0.01
0.1
1.0
10
IF, FORWARD CURRENT (mA)
1.230
1.220
1.210
100
IR = 100 mA
1.240
−50
Figure 4. Forward Characteristics
OUTPUT (V)
750
625
500
125
1.50
1.25
Input
100 k
1.00
0.75
Output
0.50
DUT
0.25
375
0
250
INPUT (V)
e n , NOISE (nV/ √Hz)
100
Figure 5. Temperature Drift
875
125
0
−25
0
25
50
75
TA, AMBIENT TEMPERATURE (°C)
10
100
1.0K
f, FREQUENCY (Hz)
10K
10
5.0
0
100k
Figure 6. Noise Voltage
0
0.1
0.2
0.3 0.6 0.7
t, TIME (ms)
0.8
0.9
Figure 7. Response Time
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4
1.0
1.1
LM285, LM385B
ΔV(BR)R, REVERSE VOLTAGE CHANGE (mV)
TYPICAL PERFORMANCE CURVES FOR LM285−2.5/385−2.5/385B−2.5
IR, REVERSE CURRENT (A)
μ
100
10
TA = +85°C
+25 °C
1.0
−40 °C
0.1
0
0.5
1.0
1.5
2.0
2.5
V(BR), REVERSE VOLTAGE (V)
3.0
3.5
10
8.0
TA = +85°C
6.0
+25 °C
2.0
0
−2.0
0.01
0.1
Figure 8. Reverse Characteristics
V(BR)R, REVERSE VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
TA = −40°C
0.8
0.6
+85 °C
0.4
+25 °C
0.2
0
0.01
0.1
1.0
10
IF, FORWARD CURRENT (mA)
2.520
2.500
2.490
2.480
2.470
2.460
2.450
100
−50
−25
0
25
50
75
TA, AMBIENT TEMPERATURE (°C)
100
125
Figure 11. Temperature Drift
OUTPUT (V)
1500
e n , NOISE (nV/ √Hz)
100
IR = 100 mA
2.510
Figure 10. Forward Characteristics
1250
1000
3.00
2.50
Input
100 k
2.00
1.50
Output
1.00
DUT
0.50
750
0
INPUT (V)
500
250
0
1.0
10
IR, REVERSE CURRENT (mA)
Figure 9. Reverse Characteristics
1.2
1.0
−40 °C
4.0
10
100
1.0K
f, FREQUENCY (Hz)
10K
10
5.0
0
100k
Figure 12. Noise Voltage
0
0.1
0.2
0.3 0.6 0.7
t, TIME (ms)
0.8
Figure 13. Response Time
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5
0.9
1.0
1.1
LM285, LM385B
ORDERING INFORMATION
Device
Operating Temperature Range
Reverse Break−Down
Voltage
LM285D−1.2
LM285D−1.2G
1.235 V
LM285D−1.2R2
LM285D−1.2R2G
LM285D−2.5
LM285D−2.5G
2.500 V
LM285D−2.5R2
LM285D−2.5R2G
LM285Z−1.2
LM285Z−1.2G
TA = −40°C to +85°C
1.235 V
LM285Z−2.5
2.500 V
LM285Z−2.5G
LM285Z−1.2RA
1.235 V
LM285Z−1.2RAG
LM285Z−2.5RA
LM285Z−2.5RAG
2.500 V
LM285Z−2.5RP
LM285Z−2.5RPG
LM385BD−1.2
LM385BD−1.2G
1.235 V
LM385BD−1.2R2
LM385BD−1.2R2G
LM385BD−2.5
LM385BD−2.5G
LM385BD−2.5R2
TA = 0°C to +70°C
2.500 V
LM385BD−2.5R2G
LM385BZ−1.2
LM385BZ−1.2G
LM385BZ−1.2RA
1.235 V
LM385BZ−1.2RAG
Package
Shipping †
SOIC−8
98 Units / Rail
SOIC−8
(Pb−Free)
98 Units / Rail
SOIC−8
2500 / Tape & Reel
SOIC−8
(Pb−Free)
2500 / Tape & Reel
SOIC−8
98 Units / Rail
SOIC−8
(Pb−Free)
98 Units / Rail
SOIC−8
2500 / Tape & Reel
SOIC−8
(Pb−Free)
2500 / Tape & Reel
TO−92
2000 Units / Bag
TO−92
(Pb−Free)
2000 Units / Bag
TO−92
2000 Units / Bag
TO−92
(Pb−Free)
2000 Units / Bag
TO−92
2000 / Tape & Reel
TO−92
(Pb−Free)
2000 / Tape & Reel
TO−92
2000 / Tape & Reel
TO−92
(Pb−Free)
2000 / Tape & Reel
TO−92
2000 Units / Fan−Fold
TO−92
(Pb−Free)
2000 Units / Fan−Fold
SOIC−8
98 Units / Rail
SOIC−8
(Pb−Free)
98 Units / Rail
SOIC−8
2500 / Tape & Reel
SOIC−8
(Pb−Free)
2500 / Tape & Reel
SOIC−8
98 Units / Rail
SOIC−8
(Pb−Free)
98 Units / Rail
SOIC−8
2500 / Tape & Reel
SOIC−8
(Pb−Free)
2500 / Tape & Reel
TO−92
2000 Units / Bag
TO−92
(Pb−Free)
2000 Units / Bag
TO−92
2000 / Tape & Reel
TO−92
(Pb−Free)
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
6
LM285, LM385B
ORDERING INFORMATION
Device
Operating Temperature Range
Reverse Break−Down
Voltage
LM385BZ−2.5
LM385BZ−2.5G
2.500 V
LM385BZ−2.5RA
LM385BZ−2.5RAG
LM385D−1.2
LM385D−1.2G
1.235 V
LM385D−1.2R2
LM385D−1.2R2G
LM385D−2.5
LM385D−2.5G
2.500 V
LM385D−2.5R2
LM385D−2.5R2G
TA = 0°C to +70°C
LM385Z−1.2
LM385Z−1.2G
LM385Z−1.2RA
LM385Z−1.2RAG
1.235 V
LM385Z−1.2RP
LM385Z−1.2RPG
LM385Z−2.5
LM385Z−2.5G
LM385Z−2.5RP
2.500 V
LM385Z−2.5RPG
Package
Shipping †
TO−92
2000 Units / Bag
TO−92
(Pb−Free)
2000 Units / Bag
TO−92
2000 / Tape & Reel
TO−92
(Pb−Free)
2000 / Tape & Reel
SOIC−8
98 Units / Rail
SOIC−8
(Pb−Free)
98 Units / Rail
SOIC−8
2500 / Tape & Reel
SOIC−8
(Pb−Free)
2500 / Tape & Reel
SOIC−8
98 Units / Rail
SOIC−8
(Pb−Free)
98 Units / Rail
SOIC−8
2500 / Tape & Reel
SOIC−8
(Pb−Free)
2500 / Tape & Reel
TO−92
2000 Units / Bag
TO−92
(Pb−Free)
2000 Units / Bag
TO−92
2000 / Tape & Reel
TO−92
(Pb−Free)
2000 / Tape & Reel
TO−92
2000 / Ammo Box
TO−92
(Pb−Free)
2000 / Ammo Box
TO−92
2000 Units / Bag
TO−92
(Pb−Free)
2000 Units / Bag
TO−92
2000 / Ammo Box
TO−92
(Pb−Free)
2000 / Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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7
LM285, LM385B
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
−X−
A
8
5
S
B
1
0.25 (0.010)
M
Y
M
4
K
−Y−
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
D
0.25 (0.010)
M
Z Y
S
X
M
J
S
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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8
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
LM285, LM385B
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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9
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Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
LM285/D