LM285, LM385B Micropower Voltage Reference Diodes The LM285/LM385 series are micropower two−terminal bandgap voltage regulator diodes. Designed to operate over a wide current range of 10 A to 20 mA, these devices feature exceptionally low dynamic impedance, low noise and stable operation over time and temperature. Tight voltage tolerances are achieved by on−chip trimming. The large dynamic operating range enables these devices to be used in applications with widely varying supplies with excellent regulation. Extremely low operating current make these devices ideal for micropower circuitry like portable instrumentation, regulators and other analog circuitry where extended battery life is required. The LM285/LM385 series are packaged in a low cost TO−226 plastic case and are available in two voltage versions of 1.235 V and 2.500 V as denoted by the device suffix (see Ordering Information table). The LM285 is specified over a −40°C to +85°C temperature range while the LM385 is rated from 0°C to +70°C. The LM385 is also available in a surface mount plastic package in voltages of 1.235 V and 2.500 V. http://onsemi.com MARKING DIAGRAMS TO−92−3 (TO−226) Z SUFFIX CASE 29 8 8 y85−z ALYW 1 SOIC−8 D SUFFIX CASE 751 Features • • • • • • LM285 Z−xxx ALYWW N.C. Cathode Anode Pb−Free Packages are Available Operating Current from 10 A to 20 mA 1.0%, 1.5%, 2.0% and 3.0% Initial Tolerance Grades Low Temperature Coefficient 1.0 Dynamic Impedance Surface Mount Package Available 1 xxx y z A L Y W, WW = 1.2 or 2.5 = 2 or 3 = 1 or 2 = Assembly Location = Wafer Lot = Year = Work Week Cathode 10 k 360 k Open for 1.235 V 600 k N.C. 1 8 Cathode N.C. 2 7 N.C. N.C. 3 6 N.C. Anode 4 5 N.C. 3 2 1 (Bottom View) 8.45 k Standard Application 74.3 k Open for 2.5 V 600 k 1.5 V Battery 425 k 500 600 k 100 k Anode July, 2004 − Rev. 5 − 3.3 k 1.235 V LM385−1.2 ORDERING INFORMATION Figure 1. Representative Schematic Diagram Semiconductor Components Industries, LLC, 2004 + 1 See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: LM285/D LM285, LM385B MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Rating Symbol Value Unit Reverse Current IR 30 mA Forward Current IF 10 mA Operating Ambient Temperature Range °C TA −40 to +85 0 to +70 LM285 LM385 Operating Junction Temperature TJ +150 °C Storage Temperature Range Tstg −65 to + 150 °C Electrostatic Discharge Sensitivity (ESD) Human Body Model (HBM) Machine Model (MM) Charged Device Model (CDM) ESD V 4000 400 2000 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) LM285−1.2 Characteristic Reverse Breakdown Voltage (IRmin IR 20 mA) LM285−1.2/LM385B−1.2 TA = Tlow to Thigh (Note 1) LM385−1.2 TA = Tlow to Thigh (Note 1) Minimum Operating Current TA = 25°C TA = Tlow to Thigh (Note 1) Reverse Breakdown Voltage Change with Current IRmin IR 1.0 mA, TA = +25°C TA = Tlow to Thigh (Note 1) 1.0 mA IR 20 mA, TA = +25°C TA = Tlow to Thigh (Note 1) Reverse Dynamic Impedance IR = 100 A, TA = +25°C Average Temperature Coefficient 10 A IR 20 mA, TA = Tlow to Thigh (Note 1) Max Min Typ Max 1.223 1.200 − − 1.235 − − − 1.247 1.270 − − 1.223 1.210 1.205 1.192 1.235 − 1.235 − 1.247 1.260 1.260 1.273 − − 8.0 − 10 20 − 8.0 − 15 20 − − − − − − − − 1.0 1.5 10 20 − − − − − − − − 1.0 1.5 20 25 − 0.6 − − 0.6 − − 80 − − 80 − − 60 − − 60 − − 20 − − 20 − 2.462 2.415 − − 2.5 − − − 2.538 2.585 − − 2.462 2.436 2.425 2.400 2.5 − 2.5 − 2.538 2.564 2.575 2.600 − − 13 − 20 30 − − 13 − 20 30 A V(BR)R mV Z V(BR)/T S Unit V IRmin Long Term Stability IR = 100 A, TA = +25°C ± 0.1°C 1. Tlow Thigh Tlow Thigh Typ V(BR)R n Minimum Operating Current TA = 25°C TA = Tlow to Thigh (Note 1) Min Symbol Wideband Noise (RMS) IR = 100 A, 10 Hz f 10 kHz Reverse Breakdown Voltage (IRmin IR 20 mA) LM285−2.5/LM385B−2.5 TA = Tlow to Thigh (Note 1) LM385−2.5 TA = Tlow to Thigh (Note 1) LM385−1.2/LM385B−1.2 ppm/°C V ppm/kHR V(BR)R V A IRmin = −40°C for LM285−1.2, LM285−2.5 = +85°C for LM285−1.2, LM285−2.5 = 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5 = +70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5 http://onsemi.com 2 LM285, LM385B ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) LM285−1.2 Characteristic Reverse Breakdown Voltage Change with Current IRmin IR 1.0 mA, TA = +25°C TA = Tlow to Thigh (Note 2) 1.0 mA IR 20 mA, TA = +25°C TA = Tlow to Thigh (Note 2) Reverse Dynamic Impedance IR = 100 A, TA = +25°C Average Temperature Coefficient 20 A IR 20 mA, TA = Tlow to Thigh (Note 2) Symbol Min Typ Max Min Typ Max − − − − − − − − 1.0 1.5 10 20 − − − − − − − − 2.0 2.5 20 25 − 0.6 − − 0.6 − − 80 − − 80 − − 120 − − 120 − − 20 − − 20 − V(BR)R V(BR)/T n Long Term Stability IR = 100 A, TA = +25°C ± 0.1°C S Unit mV Z Wideband Noise (RMS) IR = 100 A, 10 Hz f 10 kHz 2. Tlow Thigh Tlow Thigh LM385−1.2/LM385B−1.2 ppm/°C V ppm/kHR = −40°C for LM285−1.2, LM285−2.5 = +85°C for LM285−1.2, LM285−2.5 = 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5 = +70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5 http://onsemi.com 3 LM285, LM385B ∆V(BR)R, REVERSE VOLTAGE CHANGE (mV) TYPICAL PERFORMANCE CURVES FOR LM285−1.2/385−1.2/385B−1.2 IR, REVERSE CURRENT (A) µ 100 10 TA = +85°C 1.0 +25 °C 0.1 0 0.2 −40 °C 0.4 0.6 0.8 1.0 V(BR), REVERSE VOLTAGE (V) 1.2 1.4 10 8.0 TA = +85°C 6.0 +25 °C 4.0 −40 °C 2.0 0 −2.0 0.01 0.1 Figure 2. Reverse Characteristics 1.0 10 IR, REVERSE CURRENT (mA) 100 Figure 3. Reverse Characteristics 1.2 V(BR)R, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) 1.250 1.0 TA = −40°C 0.8 0.6 +25 °C 0.4 +85 °C 0.2 0 0.01 0.1 1.0 10 IF, FORWARD CURRENT (mA) 1.230 1.220 1.210 100 IR = 100 A 1.240 −50 Figure 4. Forward Characteristics OUTPUT (V) 750 625 500 125 1.50 1.25 Input 100 k 1.00 0.75 Output 0.50 DUT 0.25 375 0 250 INPUT (V) e n , NOISE (nV/ √Hz) 100 Figure 5. Temperature Drift 875 125 0 −25 0 25 50 75 TA, AMBIENT TEMPERATURE (°C) 10 100 1.0K f, FREQUENCY (Hz) 10K 10 5.0 0 100k Figure 6. Noise Voltage 0 0.1 0.2 0.3 0.6 0.7 t, TIME (ms) 0.8 0.9 Figure 7. Response Time http://onsemi.com 4 1.0 1.1 LM285, LM385B ∆V(BR)R, REVERSE VOLTAGE CHANGE (mV) TYPICAL PERFORMANCE CURVES FOR LM285−2.5/385−2.5/385B−2.5 IR, REVERSE CURRENT (A) µ 100 10 TA = +85°C +25 °C 1.0 −40 °C 0.1 0 0.5 1.0 1.5 2.0 2.5 V(BR), REVERSE VOLTAGE (V) 3.0 3.5 10 TA = +85°C 8.0 6.0 +25 °C 2.0 0 −2.0 0.01 0.1 Figure 8. Reverse Characteristics V(BR)R, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) TA = −40°C 0.8 0.6 +85 °C 0.4 +25 °C 0.2 0 0.01 0.1 1.0 10 IF, FORWARD CURRENT (mA) 2.520 2.500 2.490 2.480 2.470 2.460 2.450 100 −50 −25 0 25 50 75 TA, AMBIENT TEMPERATURE (°C) 100 125 Figure 11. Temperature Drift OUTPUT (V) 1500 e n , NOISE (nV/ √Hz) 100 IR = 100 A 2.510 Figure 10. Forward Characteristics 1250 1000 3.00 2.50 Input 100 k 2.00 1.50 Output 1.00 DUT 0.50 750 0 INPUT (V) 500 250 0 1.0 10 IR, REVERSE CURRENT (mA) Figure 9. Reverse Characteristics 1.2 1.0 −40 °C 4.0 10 100 1.0K f, FREQUENCY (Hz) 10K 10 5.0 0 100k Figure 12. Noise Voltage 0 0.1 0.2 0.3 0.6 0.7 t, TIME (ms) 0.8 Figure 13. Response Time http://onsemi.com 5 0.9 1.0 1.1 LM285, LM385B ORDERING INFORMATION Operating Temperature Range Reverse Break−Down Voltage LM285Z−2.5 TA = −40°C to +85°C LM285D−2.5 TA = −40°C to +85°C LM285Z−1.2 Package Shipping† 2.500 V TO−92 2000 Units / Bag 2.500 V SOIC−8 98 Units / Rail TA = −40°C to +85°C 1.235 V TO−92 2000 Units / Bag LM285Z−1.2G TA = −40°C to +85°C 1.235 V TO−92 (Pb−Free) 2000 Units / Bag LM285D−1.2R2 TA = −40°C to +85°C 1.235 V SOIC−8 2000 / Tape & Reel LM285D−1.2R2G TA = −40°C to +85°C 1.235 V SOIC−8 (Pb−Free) 2000 / Tape & Reel LM285Z−2.5RA TA = −40°C to +85°C 2.500 V TO−92 2000 / Tape & Reel LM285Z−1.2RA TA = −40°C to +85°C 1.235 V TO−92 2500 / Tape & Reel LM285Z−2.5RP TA = −40°C to +85°C 2.500 V TO−92 2000 Units / Fan−Fold LM285D−1.2 TA = −40°C to +85°C 1.235 V SOIC−8 98 Units / Rail LM285D−2.5R2 TA = −40°C to +85°C 2.500 V SOIC−8 2500 / Tape & Reel LM285D−2.5R2G TA = −40°C to +85°C 2.500 V SOIC−8 (Pb−Free) 2500 / Tape & Reel LM385BD−1.2 TA = 0°C to +70°C 1.235 V SOIC−8 98 Units / Rail LM385BD−1.2G TA = 0°C to +70°C 1.235 V SOIC−8 (Pb−Free) 98 Units / Rail LM385BD−1.2R2 TA = 0°C to +70°C 1.235 V SOIC−8 2500 / Tape & Reel LM385BD−1.2R2G TA = 0°C to +70°C 1.235 V SOIC−8 (Pb−Free) 2500 / Tape & Reel LM385BD−2.5 TA = 0°C to +70°C 2.500 V SOIC−8 98 Units / Rail LM385BD−2.5R2 TA = 0°C to +70°C 2.500 V SOIC−8 2500 / Tape & Reel LM385BZ−1.2 TA = 0°C to +70°C 1.235 V SOIC−8 98 Units / Rail Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 LM285, LM385B PACKAGE DIMENSIONS A B TO−92 (TO−226) Z SUFFIX CASE 29−11 ISSUE AL R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE DIM A B C D G H J K L N P R V K D X X G J H V C SECTION X−X 1 N N http://onsemi.com 7 INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− LM285, LM385B PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AB NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. −X− A 8 5 S B 1 0.25 (0.010) M Y M 4 K −Y− G C N DIM A B C D G H J K M N S X 45 SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0 8 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 8 0.010 0.020 0.228 0.244 SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SENSEFET is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 For additional information, please contact your local Sales Representative. LM285/D