A Product Line of Diodes Incorporated DMC4028SSD ADVANCE INFORMATION 40V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET Product Summary Device Features and Benefits Q1 • ID RDS(on) Max V(BR)DSS TA = 25°C 28mΩ @ VGS= 10V 7.2A 49mΩ @ VGS= 4.5V 5.4A 50mΩ @ VGS= -10V -5.2A 79mΩ @ VGS= -4.5V -4.7A 40V Q2 Low on-resistance • Fast switching speed • • • “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability -40V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Case: SO-8 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) • • Moisture Sensitivity: Level 1 per J-STD-020 Motor control • • Terminals Connections: See diagram below Backlighting • • DC-DC Converters Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Power management functions • Weight: 0.074 grams (approximate) D1 SO-8 S1 D1 G1 D1 S2 D2 G2 D2 Top view Top View Top View D2 G2 G1 S2 S1 Q1 N-Channel Q2 P-Channel Equivalent Circuit Ordering Information (Note 3) Product DMC4028SSD-13 Notes: Marking C4028SD Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information C4028SD YY WW DMC4028SSD Document Number: D35041 Rev: 1 - 2 = Manufacturer’s Marking C4028SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53) 1 of 11 www.diodes.com October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMC4028SSD Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS = 10V Pulsed Drain Current VGS = 10V Continuous Source Current (Body diode) Pulsed Source Current (Body diode) (Note 4) (Notes 6 & 8) TA = 70°C (Notes 6 & 8) (Notes 5 & 8) (Notes 5 & 9) (Notes 7 & 8) (Notes 6 & 8) (Notes 7 & 8) Symbol VDSS VGSS ID IDM IS ISM N-Channel - Q1 40 ±20 7.2 5.5 5.4 6.5 27.3 3.35 27.3 P-Channel - Q2 -40 ±20 5.2 4.2 4 4.8 20.4 3.15 20.4 Units V V N-Channel - Q1 P-Channel - Q2 1.25 10 1.8 14.3 2.16 17.2 100 70 58 53 53 -55 to +150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Notes 5 & 8) Power Dissipation Linear Derating Factor (Notes 5 & 9) PD (Notes 6 & 8) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: (Notes 5 & 8) (Notes 5 & 9) (Notes 6 & 8) (Notes 8 & 10) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 4. AEC-Q101 VGS maximum is ±16V. 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as note (5), except the device is measured at t ≤ 10 sec. 7. Same as note (5), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 8. For a dual device with one active die. 9. For a device with two active die running at equal power. 10. Thermal resistance from junction to solder-point (at the end of the drain lead). DMC4028SSD Document Number: D35041 Rev: 1 - 2 2 of 11 www.diodes.com October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4028SSD 10 RDS(ON) Limited -ID Drain Current (A) ID Drain Current (A) RDS(ON) DC 1 1s 100ms 100m 1ms (Note 3 & 6) 100us Limited 1 DC 1s 100ms 1 10ms 1ms (Note 3 & 6) 10m NPN @ Single Pulse, T amb=25°C 0.1 10 100m 10ms 10m 100us PNP @ Single Pulse, T amb=25°C 0.1 10 VDS Drain-Source Voltage (V) 1 10 -VDS Drain-Source Voltage (V) N-channel Safe Operating Area P-channel Safe Operating Area 100 80 60 D=0.5 40 Single Pulse D=0.2 20 D=0.05 0 100µ D=0.1 1m 10m 100m 1 10 100 1k Max Power Dissipation (W) Thermal Resistance (°C/W) 2.0 1.5 Two active die One active die 1.0 0.5 0.0 Pulse Width (s) 0 25 50 75 100 125 150 Temperature (°C) Transient Thermal Impedance Maximum Power (W) ADVANCE INFORMATION Thermal Characteristics Derating Curve Single Pulse T amb=25°C 100 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation DMC4028SSD Document Number: D35041 Rev: 1 - 2 3 of 11 www.diodes.com October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMC4028SSD Electrical Characteristics – Q1 N-Channel TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 40 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.5 ±100 V μA nA ID = 250μA, VGS = 0V VDS = 40V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.0 RDS (ON) ⎯ Forward Transconductance (Notes 11 & 12) Diode Forward Voltage (Note 11) Reverse recovery time (Note 12) Reverse recovery charge (Note 12) DYNAMIC CHARACTERISTICS (Note 12) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 13) Total Gate Charge (Note 13) Gate-Source Charge (Note 13) Gate-Drain Charge (Note 13) Turn-On Delay Time (Note 13) Turn-On Rise Time (Note 13) Turn-Off Delay Time (Note 13) Turn-Off Fall Time (Note 13) gfs VSD trr Qrr ⎯ ⎯ S V ns nC ID = 250μA, VDS = VGS VGS = 10V, ID = 6A VGS = 4.5V, ID = 5A VDS = 15V, ID = 6A IS = 6A, VGS = 0V ⎯ 3.0 0.028 0.049 ⎯ 1.1 ⎯ ⎯ V Static Drain-Source On-Resistance (Note 11) ⎯ 0.018 0.033 22.8 0.845 135 799 Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 604 106 59.6 6.5 12.9 2.3 3.6 4.2 12.4 13.8 10.7 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF nC nC nC nC ns ns ns ns Notes: Ω Test Condition IS = 6A, di/dt = 100A/μs VDS = 20V, VGS = 0V f = 1MHz VGS = 4.5V VGS = 10V VDS = 20V ID = 6A VDD = 20V, VGS = 10V ID = 6A, RG ≅ 6.0Ω 11. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 12. For design aid only, not subject to production testing. 13. Switching characteristics are independent of operating junction temperatures. DMC4028SSD Document Number: D35041 Rev: 1 - 2 4 of 11 www.diodes.com October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4028SSD T = 25°C 4.5V 10 3.5V 3V 1 VGS 0.1 2.5V T = 150°C 10V 4V 10 ID Drain Current (A) ID Drain Current (A) 10V 3.5V 3V 1 2.5V 0.1 2V VGS 0.01 0.01 0.1 1 10 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics T = 150°C 0.1 T = 25°C 0.01 1E-3 1 2 3 VGS Gate-Source Voltage (V) Typical Transfer Characteristics 10 T = 25°C VGS 3V 3.5V 1 0.1 4V 4.5V 10V 0.01 0.01 0.1 1 10 ID Drain Current (A) On-Resistance v Drain Current DMC4028SSD Document Number: D35041 Rev: 1 - 2 VGS = 10V 1.4 ID = 12A RDS(on) 1.2 1.0 0.8 0.6 0.4 -50 VGS(th) VGS = VDS ID = 250uA 0 50 100 Tj Junction Temperature (°C) 150 Normalised Curves v Temperature ISD Reverse Drain Current (A) ID Drain Current (A) 1 Normalised RDS(on) and VGS(th) 1.6 VDS = 10V RDS(on) Drain-Source On-Resistance (Ω) ADVANCE INFORMATION Typical Characteristics – Q1 N-Channel 10 1 T = 150°C 0.1 T = 25°C 0.01 Vgs = 0V 1E-3 0.2 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 11 www.diodes.com October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4028SSD VGS = 0V 800 f = 1MHz 600 CISS COSS 400 CRSS 200 0 0.1 1 10 VGS Gate-Source Voltage (V) 10 C Capacitance (pF) ADVANCE INFORMATION Typical Characteristics – Q1 N-Channel - continued 8 6 4 VDS = 20V 2 0 ID = 6A 0 2 4 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 6 8 10 12 14 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits – Q1 N-Channel Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms DMC4028SSD Document Number: D35041 Rev: 1 - 2 Switching time test circuit 6 of 11 www.diodes.com October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMC4028SSD Electrical Characteristics – Q2 P-Channel @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -40 – – – – – – -0.5 ±100 V A nA ID = -250μA, VGS = 0V VDS = -40V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1.0 RDS (ON) – Forward Transconductance (Notes 14 & 15) Diode Forward Voltage (Note 4) Reverse recovery time (Note 15) Reverse recovery charge (Note 15) DYNAMIC CHARACTERISTICS (Note 15) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 16) Total Gate Charge (Note 16) Gate-Source Charge (Note 16) Gate-Drain Charge (Note 16) Turn-On Delay Time (Note 16) Turn-On Rise Time (Note 16) Turn-Off Delay Time (Note 16) Turn-Off Fall Time (Note 16) gfs VSD trr Qrr – – – – -3.0 0.050 0.079 – -1.1 – – V Static Drain-Source On-Resistance (Note 14) – 0.039 0.060 16.6 -0.865 138 841 S V ns nC ID = -250μA, VDS = VGS VGS = -10V, ID = -6A VGS = -4.5V, ID = -5A VDS = -15V, ID = -6A IS = -6A, VGS = 0V Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf – – – – – – – – – – – 674 115 67.7 7.0 14 2.2 3.7 2.3 14.1 25.1 14.3 – – – – – – – – – – – pF pF pF nC nC nC nC ns ns ns ns Notes: Ω Test Condition IS = -6A, di/dt = 100A/μs VDS = -20V, VGS = 0V f = 1MHz VGS = -4.5V VGS = -10V VDS = -20V ID = -6A VDD = -20V, VGS = -10V ID = -6A, RG ≅ 6.0Ω 14. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 15. For design aid only, not subject to production testing. 16. Switching characteristics are independent of operating junction temperatures. DMC4028SSD Document Number: D35041 Rev: 1 - 2 7 of 11 www.diodes.com October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4028SSD 4V -ID Drain Current (A) 10 3V 1 2.5V 0.1 -VGS 0.01 4V 3.5V 10 3V 2.5V 1 2V 0.1 -VGS 0.01 0.1 10 1 10 0.1 10 -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics -VDS = 10V 1 T = 150°C T = 25°C 0.1 1.5 2.0 2.5 3.0 3.5 1.6 1 3.5V 4V 4.5V 10V 0.1 1 10 -ISD Reverse Drain Current (A) 3V 0.1 1.2 1.0 VGS(th) 0.8 DMC4028SSD Document Number: D35041 Rev: 1 - 2 VGS = VDS ID = -250uA 0.6 -50 0 50 100 150 10 1 T = 150°C T = 25°C 0.1 0.01 1E-3 0.2 0.4 0.6 0.8 1.0 1.2 -VSD Source-Drain Voltage (V) -ID Drain Current (A) On-Resistance v Drain Current RDS(on) Normalised Curves v Temperature T = 25°C 2.5V ID = -12A Tj Junction Temperature (°C) Typical Transfer Characteristics -VGS VGS = -10V 1.4 -VGS Gate-Source Voltage (V) 0.01 0.01 1 -VDS Drain-Source Voltage (V) Normalised RDS(on) and VGS(th) -ID Drain Current (A) 10V T = 150°C 3.5V -ID Drain Current (A) 10V T = 25°C RDS(on) Drain-Source On-Resistance (Ω) ADVANCE INFORMATION Typical Characteristics – Q2 P-Channel Source-Drain Diode Forward Voltage 8 of 11 www.diodes.com October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4028SSD 10 -VGS Gate-Source Voltage (V) 1000 VGS = 0V C Capacitance (pF) ADVANCE INFORMATION Typical Characteristics – Q2 P-Channel - continued f = 1MHz 800 CISS 600 COSS CRSS 400 200 0 0.1 1 10 8 6 4 VDS = -20V 2 0 ID = -6A 0 2 4 6 8 10 12 14 Q - Charge (nC) -VDS - Drain - Source Voltage (V) Gate-Source Voltage v Gate Charge Capacitance v Drain-Source Voltage Test Circuits – Q2 P-Channel Current regulator QG 12V VG QGS 50k 0.2F Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Gate charge test circuit Basic gate charge waveform VDS 90% RD VGS VDS RG VDD 10% VGS tr td(off) t(on) tr td(on) t(on) Switching time waveforms DMC4028SSD Document Number: D35041 Rev: 1 - 2 Pulse width ⬍ 1S Duty factor 0.1% 9 of 11 www.diodes.com Switching time test circuit October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4028SSD ADVANCE INFORMATION Package Outline Dimensions θ DIM Inches Millimeters DIM Inches Min. Millimeters Max. Max. Min. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 θ 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max. Min. 1.27 BSC Suggested Pad Layout 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.27 0.050 mm inches DMC4028SSD Document Number: D35041 Rev: 1 - 2 10 of 11 www.diodes.com October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMC4028SSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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