A Product Line of Diodes Incorporated DMC4040SSD 40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max (A) Device V(BR)DSS NEW PRODUCT Q1 RDS(on) max TA = 25°C Matched N & P RDS(on) - Minimizes power losses Fast switching – Minimizes switching losses (Notes 3 & 5) • Dual device – Reduces PCB area 25mΩ @ VGS= 10V 7.5 • • "Green" component and RoHS compliant (Note 1) Qualified to AEC-Q101 Standards for High Reliability 40mΩ @ VGS= 4.5V 6.2 25mΩ @ VGS= -10V -7.3 45mΩ @ VGS= -4.5V -5.7 40V Q2 • • -40V Mechanical Data Description and Applications This MOSFET has been designed to ensure that RDS(on) of N and P channel FET are matched to minimize losses in both arms of the bridge. The DMC4040SSD is optimized for use in 3 phases brushless DC motor circuits (BLDC), CCFL backlighting. • 3 phases BLDC motor • CCFL backlighting SO-8 • Case: SO-8 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Weight: 0.074 grams (approximate) S1 D1 G1 D1 S2 D2 G2 D2 Top View Top View D1 G1 D2 G2 S1 S2 Q1 N-Channel Q2 P-Channel Equivalent Circuit Ordering Information (Note 1) Product DMC4040SSD-13 Note: Marking C4040SD Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information C4040SD YY WW DMC4040SSD Document number: DS32120 Rev. 2 - 2 = Manufacturer’s Marking C4040SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 10 = 2010) WW = Week (01 - 53) 1 of 11 www.diodes.com March 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4040SSD Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT Continuous Drain Current VGS = 10V Pulsed Drain Current VGS = 10V Continuous Source Current (Body diode) Pulsed Source Current (Body diode) (Notes 3 & 5) TA = 70°C (Notes 3 & 5) (Notes 2 & 5) (Notes 2 & 6) (Notes 4 & 5) (Notes 3 & 5) (Notes 4 & 5) ID IDM IS ISM N-Channel - Q1 40 ±20 7.5 5.8 5.7 6.8 29.0 3.0 29.0 P-Channel - Q2 -40 ±20 -7.5 -5.8 -5.7 -6.8 -29.0 -3.0 -29.0 Unit N-Channel - Q1 P-Channel - Q2 1.25 10 1.8 14.3 2.14 17.2 100 70 58 51 -55 to +150 Unit V A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Notes 2 & 5) Power Dissipation Linear Derating Factor (Notes 2 & 6) PD (Notes 3 & 5) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: (Notes 2 & 5) (Notes 2 & 6) (Notes 3 & 5) (Notes 5 & 7) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note (2), except the device is measured at t ≤ 10 sec. 4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs. 5. For a dual device with one active die. 6. For a device with two active die running at equal power. 7. Thermal resistance from junction to solder-point (at the end of the drain lead). DMC4040SSD Document number: DS32120 Rev. 2 - 2 2 of 11 www.diodes.com March 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4040SSD Thermal Characteristics -ID Drain Current (A) ID Drain Current (A) RDS(ON) 10 Limited DC 1 1s 100ms 100m 1ms 100us Limited 1 DC 1s 100ms 1 1ms 100us One active die 0.1 10 10ms Single Pulse Tamb= 25°C 10m One active die 0.1 10 100m 10ms Single Pulse Tamb= 25°C 10m VDS Drain-Source Voltage (V) 1 10 -VDS Drain-Source Voltage (V) N-channel Safe Operating Area P-channel Safe Operating Area 100 R(theta junction-to-ambient), RθJA One active die 80 60 D=0.5 40 Single Pulse D=0.2 20 D=0.05 0 100µ D=0.1 1m 10m 100m 1 10 100 1k Max Power Dissipation (W) Thermal Resistance (°C/W) 2.0 1.5 Two active die One active die 1.0 0.5 0.0 Pulse Width (s) 0 25 50 75 100 125 150 Temperature (°C) Transient Thermal Impedance Maximum Power (W) NEW PRODUCT RDS(ON) Derating Curve Single Pulse T amb= 25°C 100 One active die 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation DMC4040SSD Document number: DS32120 Rev. 2 - 2 3 of 11 www.diodes.com March 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4040SSD Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 40 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.0 ±100 V μA nA ID = 250μA, VGS= 0V VDS= 40V, VGS= 0V VGS= ±20V, VDS= 0V VGS(th) 0.8 RDS (ON) ⎯ gfs VSD ⎯ ⎯ 1.8 0.025 0.040 ⎯ 1.0 V Static Drain-Source On-Resistance (Note 8) 1.3 0.013 0.028 12.6 0.7 ID= 250μA, VDS= VGS VGS= 10V, ID= 3A VGS= 4.5V, ID= 3A VDS= 5V, ID= 3A IS= 1A, VGS= 0V Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1790 160 120 1.03 16.0 37.6 7.8 6.6 8.1 15.1 24.3 5.3 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Forward Transconductance (Notes 8 & 9) Diode Forward Voltage (Note 8) DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (Note 10) Total Gate Charge (Note 10) Gate-Source Charge (Note 10) Gate-Drain Charge (Note 10) Turn-On Delay Time (Note 10) Turn-On Rise Time (Note 10) Turn-Off Delay Time (Note 10) Turn-Off Fall Time (Note 10) Ω S V pF Ω nC ns Test Condition VDS= 20V, VGS= 0V f= 1MHz VDS= 0V, VGS= 0V, f= 1MHz VGS= 4.5V VDS= 20V ID= 3A VGS= 10V VDD= 20V, VGS= 10V ID= 3A 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperatures. Notes: Typical Characteristics – Q1 N-Channel 30 30 VGS = 8.0V VGS = 4.5V 20 VDS = 5V 25 ID, DRAIN CURRENT (A) 25 ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics – Q1 N-CHANNEL @TA = 25°C unless otherwise specified 15 VGS = 4.0V 10 20 15 10 VGS = 3.5V TA = 150°C 5 5 VGS = 2.5V 0 VGS = 3.0V 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMC4040SSD Document number: DS32120 Rev. 2 - 2 TA = 85°C TA = 25°C TA = -55°C 0 0 T A = 125°C 2 4 of 11 www.diodes.com 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 5 March 2011 © Diodes Incorporated A Product Line of Diodes Incorporated 0.05 0.04 0.03 VGS = 4.5V 0.02 VGS = 10V 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 10V 0.03 TA = 150°C 0.02 TA = 125°C TA = 85°C TA = 25°C 0.01 TA = -55°C 0 30 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.06 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.04 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.06 1.7 VGS = 10V ID = 20A 1.5 1.3 VGS = 4.5V ID = 10A 1.1 0.9 0.7 0.5 -50 0.05 0.04 0.02 0 -50 18 2.4 16 IS, SOURCE CURRENT (A) 20 2.7 ID = 1mA 1.5 1.2 0.9 ID = 250µA 0.6 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature Document number: DS32120 Rev. 2 - 2 14 T A = 25°C 12 10 8 6 4 2 0.3 DMC4040SSD -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 3.0 1.8 VGS = 10V ID = 20A 0.01 -25 2.1 VGS = 4.5V ID = 10A 0.03 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMC4040SSD 5 of 11 www.diodes.com 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 March 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4040SSD IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) 10,000 Ciss 1,000 Coss Crss 100 1,000 T A = 150°C TA = 125°C 100 TA = 85°C 10 TA = 25°C f = 1MHz 1 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 30 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 40 10 VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT 10,000 VDS = 20V ID = 12A 8 6 4 2 0 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMC4040SSD Document number: DS32120 Rev. 2 - 2 40 6 of 11 www.diodes.com March 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4040SSD Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -40 – – – – – – -1.0 ±100 V μA nA ID = -250μA, VGS = 0V VDS = -40V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -0.8 RDS(on) – Forward Transconductance (Notes 11 & 12) Diode Forward Voltage (Note 11) DYNAMIC CHARACTERISTICS (Note 12) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (Note 13) Total Gate Charge (Note 13) Gate-Source Charge (Note 13) Gate-Drain Charge (Note 13) Turn-On Delay Time (Note 13) Turn-On Rise Time (Note 13) Turn-Off Delay Time (Note 13) Turn-Off Fall Time (Note 13) gfs VSD – – -1.8 0.025 0.045 – -1.0 V Static Drain-Source On-Resistance (Note 11) -1.3 0.018 0.030 16.6 -0.7 ID = -250μA, VDS = VGS VGS = -10V, ID = -3A VGS = -4.5V, ID = -3A VDS = -5V, ID = -3A IS = -1A, VGS = 0V Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf – – – 1643 179 128 6.43 14.0 33.7 5.5 7.3 6.9 14.7 53.7 30.9 – – – ⎯ – – – – – – – – ⎯ – – – – – – – – Ω S V pF Ω nC ns Test Condition VDS = -20V, VGS = 0V f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -4.5V VDS = -20V ID = -3A VGS = -10V VDD = -20V, VGS = -10V ID = -3A 11.Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 12. For design aid only, not subject to production testing. 13. Switching characteristics are independent of operating junction temperatures. Notes: Typical Characteristics – Q2 P-Channel 30 30 25 25 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics – Q2 P-CHANNEL @TA = 25°C unless otherwise specified 20 15 10 5 0 VDS = -5V T A = 85°C T A = 25°C 20 TA = 150°C TA = 125°C TA = -55°C 15 10 5 0 0 0.5 1 1.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Output Characteristic DMC4040SSD Document number: DS32120 Rev. 2 - 2 2 7 of 11 www.diodes.com 0 1 2 3 4 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 13 Typical Transfer Characteristic 5 March 2011 © Diodes Incorporated A Product Line of Diodes Incorporated 0.04 VGS = -4.5V 0.03 0.02 VGS = -10V 0.01 0 0 5 10 15 20 25 -ID, DRAIN-SOURCE CURRENT (A) Fig. 14 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = -10V 0.03 TA = 150°C TA = 125°C TA = 85°C 0.02 TA = 25°C TA = -55°C 0.01 0 30 0 5 10 15 20 25 -ID, DRAIN CURRENT (A) Fig. 15 Typical On-Resistance vs. Drain Current and Temperature 30 0.06 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.04 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 1.7 VGS = -10V ID = -20A 1.5 1.3 VGS = -4.5V ID = -10A 1.1 0.9 0.7 0.5 -50 0.05 0.04 VGS = -4.5V ID = -10A 0.03 0.02 VGS = -10V ID = -20A 0.01 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 16 On-Resistance Variation with Temperature -25 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 17 On-Resistance Variation with Temperature 2.0 20 18 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMC4040SSD 1.5 ID = -1mA 1.0 ID = -250µA 0.5 16 14 TA = 25°C 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 18 Gate Threshold Variation vs. Ambient Temperature DMC4040SSD Document number: DS32120 Rev. 2 - 2 8 of 11 www.diodes.com 0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 19 Diode Forward Voltage vs. Current March 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4040SSD -IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) 10,000 Ciss 1,000 Coss Crss 100 T A = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = 25°C 10 1 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Total Capacitance 30 0 5 10 15 20 25 30 35 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 21 Typical Leakage Current vs. Drain-Source Voltage 40 10 -VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT 10,000 VDS = -20V ID = -12A 8 6 4 2 0 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Fig. 22 Gate-Charge Characteristics DMC4040SSD Document number: DS32120 Rev. 2 - 2 40 9 of 11 www.diodes.com March 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4040SSD 0.254 NEW PRODUCT Package Outline Dimensions E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm D Suggested Pad Layout X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMC4040SSD Document number: DS32120 Rev. 2 - 2 10 of 11 www.diodes.com March 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4040SSD IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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