New Product BU1006A thru BU1010A Vishay General Semiconductor Enhanced Power Bridge Rectifiers FEATURES PowerBridge TM • UL recognition file number E309391 (QQQX2) UL 1557 (see *) • Thin single in-line package + ~ ~ - Case Style BU ~ ~ • Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU1006A5S) + • Superior thermal conductivity • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC + ~ ~ - * Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested to maximum case, storage and junction temperature to 150 °C to withstand 1500 V. Epoxy meets UL 94V-0 flammability rating. MECHANICAL DATA Case: BU Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 600 V, 800 V, 1000 V IFSM 90 A IR 5 µA VF at IF = 5 A 0.94 V TJ max. 150 °C TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for switching power supply, home appliances and white-goods applications. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage SYMBOL BU1006A BU1008A BU1010A UNIT VRRM 600 800 1000 V (1) Average rectified forward current (Fig. 1, 2) Non-repetitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C Rating for fusing (t < 8.3 ms) TJ = 25 °C Operating junction and storage temperature range TC = 90 °C TA = 25 °C (2) IO 10 3.0 A IFSM 90 A I 2t 33 A 2s TJ, TSTG - 55 to + 150 °C Notes: (1) With 60 W air cooled heatsink (2) Without heatsink, free air Document Number: 84800 Revision: 11-Mar-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product BU1006A thru BU1010A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Maximum instantaneous forward voltage per diode (1) IF = 5.0 A TA = 25 °C TA = 125 °C VF 1.02 0.94 1.10 1.00 V Maximum reverse current per diode rated VR TA = 25 °C TA = 125 °C IR 45 5.0 250 µA Typical junction capacitance per diode 4.0 V, 1 MHz CJ 30 - pF Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BU1006A BU1008A (1) RθJC RθJA (2) Typical thermal resistance BU1010A UNIT 3.0 20 °C/W Notes: (1) With 60 W air cooled heatsink (2) Without heatsink, free air ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BU1006A-E3/45 4.48 45 20 Tube BU1006A-E3/51 4.48 51 250 Paper tray BU1006A5S-E3/45 4.48 45 20 Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 4 Average Forward Rectified Current (A) Average Forward Output Current (A) 12 10 With Heatsink Sine-Wave, R-Load TC Measured at Device Bottom 8 6 TC TC 4 2 0 3 2 1 Without Heatsink Sine-Wave, R-Load Free Air, TA 0 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 Case Temperature (°C) Ambient Temperature (°C) Figure 1. Derating Curve Output Rectified Current Figure 2. Forward Current Derating Curve www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 150 Document Number: 84800 Revision: 11-Mar-08 New Product BU1006A thru BU1010A Vishay General Semiconductor 24 Instantaneous Reverse Current (µA) 1000 Average Power Loss (W) 20 16 12 8 4 0 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0 1 2 3 4 5 6 7 8 9 10 11 10 20 30 40 50 60 70 80 90 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Figure 3. Average Rectified Forward Current Figure 5. Typical Reverse Characteristics Per Diode 100 100 TJ = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) TJ = 150 °C 100 10 1 TJ = 125 °C TJ = 25 °C 0.1 0.01 0.2 10 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 4. Typical Forward Characteristics Per Diode Figure 6. Typical Junction Capacitance Per Diode Document Number: 84800 Revision: 11-Mar-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 New Product BU1006A thru BU1010A Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Type BU 0.161 (4.10) 0.142 (3.60) 0.880 (22.3) 0.860 (21.8) 0.020R (Typ.) 0.125 (3.2) x 45° Chamfer 0.310 (7.9) 0.290 (7.4) 0.160 (4.1) 0.140 (3.5) 0.740 (18.8) 0.720 (18.3) 0.075 (1.9) R 0.080 (2.03) 0.060 (1.52) + View A 9° Typ. ~ ~ 0.085 (2.16) 0.065 (1.65) - 5° Typ. 0.710 (18.0) 0.690 (17.5) 0.050 (1.27) 0.040 (1.02) 0.100 (2.54) 0.085 (2.16) 0.190 (4.83) 0.210 (5.33) 0.048 (1.23) 0.039 (1.00) 0.024 (0.62) 0.020 (0.52) 0.080 (2.03) 0.065 (1.65) Polarity shown on front side of case, positive lead beveled corner 0.055 (1.385) Ref. 0.094 (2.39) x 45° Ref. R 0.11 (2.78) Ref. 0.64 (16.28) Ref. 0.62 (15.78) Ref. R 0.10 (2.60) Ref. 0.055 (1.385) Ref. www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 84800 Revision: 11-Mar-08 New Product BU1006A thru BU1010A Vishay General Semiconductor FORMING SPECIFICATION: BU-5S in inches (millimeters) 0.161 (4.10) 0.142 (3.60) 0.880 (22.3) 0.860 (21.8) 0.125 (3.2) x 45° Chamfer 0.160 (4.1) 0.140 (3.5) 0.080 (2.03) 0.060 (1.52) 0.050 (1.27) 0.040 (1.02) 0.213 (5.40) 0.173 (4.40) 0.417 (10.60) 0.370 (9.40) 0.310 (7.9) 0.290 (7.4) 0.740 (18.8) 0.720 (18.3) 0.075 (1.9)R + 9° Typ. 0.020R (Typ.) ~ ~ - 0.085 (2.16) 0.065 (1.65) 0.100 (2.54) 0.085 (2.16) 5° Typ. 0.219 (5.55) Max. 0.315 (8.0) 0.276 (7.0) 0.134 (3.40) 0.087 (2.20) 0.080 (2.03) 0.065 (1.65) 0.319 (8.10) 0.272 (6.90) 0.319 (8.10) 0.272 (6.90) 0.024 (0.62) 0.020 (0.52) APPLICATION NOTE (1) Device UL approved for safety use dielectric strength of 1500 V. (2) If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement. (3) Heat sink shape recommendation: (3) 2.5 mm Min. Heat Sink 2.5 mm Min. By Safety Requirements Document Number: 84800 Revision: 11-Mar-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1