ONSEMI MC74HC132ADR2

MC74HC132A
Quad 2-Input NAND Gate
with Schmitt-Trigger Inputs
High–Performance Silicon–Gate CMOS
The MC74HC132A is identical in pinout to the LS132. The device
inputs are compatible with standard CMOS outputs; with pullup
resistors, they are compatible with LSTTL outputs.
The HC132A can be used to enhance noise immunity or to square up
slowly changing waveforms.
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MARKING
DIAGRAMS
14
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1.0 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 72 FETs or 18 Equivalent Gates
LOGIC DIAGRAM
A1
B1
A2
HC132A
AWLYWW
1
PIN ASSIGNMENT
4
Y2
5
9
8
B3
SOIC–14
D SUFFIX
CASE 751A
Y1
Y = AB
A3
1
14
2
6
B2
MC74HC132AN
AWLYYWW
A
= Assembly Location
WL or L = Wafer Lot
YY or Y = Year
WW or W = Work Week
1
3
PDIP–14
N SUFFIX
CASE 646
A1
1
14
VCC
B1
2
13
B4
Y1
3
12
A4
A2
4
11
Y4
B2
5
10
B3
Y2
6
9
A3
GND
7
8
Y3
Y3
10
A4 12
11
B4
ORDERING INFORMATION
Y4
Device
13
PIN 14 = VCC
PIN 7 = GND
FUNCTION TABLE
Inputs
Shipping
MC74HC132AN
PDIP–14
2000 / Box
MC74HC132AD
SOIC–14
55 / Rail
MC74HC132ADR2
SOIC–14
2500 / Reel
Output
A
B
Y
L
L
H
H
L
H
L
H
H
H
H
L
 Semiconductor Components Industries, LLC, 2000
March, 2000 – Rev. 7
Package
1
Publication Order Number:
MC74HC132A/D
MC74HC132A
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MAXIMUM RATINGS*
Symbol
VCC
Parameter
DC Supply Voltage (Referenced to GND)
Value
Unit
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air,
750
500
mW
Tstg
Storage Temperature
– 65 to + 150
_C
Iin
TL
Plastic DIP†
SOIC Package†
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
v
v
_C
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
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RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
Min
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage
(Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time (Figure 1)
*When Vin
Max
Unit
2.0
6.0
V
0
VCC
V
– 55
+ 125
_C
—
no
limit*
ns
0.5 VCC, ICC >> quiescent current.
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
V
25_C
– 40_C to
+ 85_C
– 55_C to
+ 125_C
Unit
VT+ max
Maximum Positive–Going
Input Threshold Voltage
(Figure 3)
Vout = 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
VT+ min
Minimum Positive–Going
Input Threshold Voltage
(Figure 3)
Vout = 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
1.0
2.3
3.0
0.95
2.25
2.95
0.95
2.25
2.95
V
VT– max
Maximum Negative–Going
Input Threshold Voltage
(Figure 3)
Vout = VCC – 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
0.9
2.0
2.6
0.95
2.05
2.65
0.95
2.05
2.65
V
VT– min
Minimum Negative–Going
Input Threshold Voltage
(Figure 3)
Vout = VCC – 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
VHmax
Note 2
Maximum Hysteresis Voltage
(Figure 3)
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
1.2
2.25
3.0
1.2
2.25
3.0
1.2
2.25
3.0
V
VHmin
Note 2
Minimum Hysteresis Voltage
(Figure 3)
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
0.2
0.4
0.5
0.2
0.4
0.5
0.2
0.4
0.5
V
NOTE: 1. VHmin > (VT+ min) – (VT– max); VHmax = (VT+ max) + (VT– min).
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book
(DL129/D).
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2
MC74HC132A
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DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
VOH
– 55 to
25_C
Vin VT– min or VT+ max
|Iout|
20 µA
2.0
4.5
6.0
Vin –VT– min or VT+ max
|Iout|
4.0 mA
|Iout|
5.2 mA
Parameter
Test Conditions
Minimum High–Level Output
Voltage
VOL
VCC
V
Vin ≥VT+ max
|Iout|
20 µA
Maximum Low–Level Output
Voltage
Vin≥VT+ max
Iin
ICC
|Iout|
|Iout|
4.0 mA
5.2 mA
85_C
125_C
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
4.5
6.0
0.26
0.26
0.33
0.33
0.4
0.4
Unit
V
V
Maximum Input Leakage
Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 µA
6.0
1.0
10
40
µA
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
VCC
V
– 55 to
25_C
85_C
125_C
tPLH,
tPHL
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
2.0
4.5
6.0
125
25
21
155
31
26
190
38
32
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
Maximum Input Capacitance
—
10
10
10
pF
Symbol
Cin
Parameter
Unit
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Per Gate)*
pF
24
* Used to determine the no–load dynamic power consumption: P D = C PD V CC 2 f + I CC V CC . For load considerations, see Chapter 2 of the
ON Semiconductor High–Speed CMOS Data Book (DL129/D).
tr
tf
TEST POINT
VCC
90%
50%
10%
INPUT
A OR B
tPHL
90%
50%
10%
Y
OUTPUT
GND
DEVICE
UNDER
TEST
tPLH
tTHL
CL*
tTLH
*Includes all probe and jig capacitance
Figure 1. Switching Waveforms
Figure 2. Test Circuit
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3
VT , TYPICAL INPUT THRESHOLD VOLTAGE (VOLTS
MC74HC132A
4
3
VHtyp
2
1
2
3
4
5
VCC, POWER SUPPLY VOLTAGE (VOLTS)
VHtyp = (VT + typ) – (VT – typ)
6
Figure 3. Typical Input Threshold, VT+, VT–
Versus Power Supply Voltage
VCC
Vout
Vin
(a) A SCHMITT TRIGGER SQUARES UP INPUTS
(a) WITH SLOW RISE AND FALL TIMES
(b) A SCHMITT TRIGGER OFFERS MAXIMUM NOISE
(b) IMMUNITY
VCC
VCC
VH
VH
Vin
VT +
VT –
Vin
VT +
VT –
GND
GND
VOH
VOH
Vout
Vout
VOL
VOL
Figure 4. Typical Schmitt–Trigger Applications
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4
MC74HC132A
PACKAGE DIMENSIONS
PDIP–14
N SUFFIX
CASE 646–06
ISSUE L
14
8
1
7
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE
POSITION AT SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
4. ROUNDED CORNERS OPTIONAL.
B
A
F
DIM
A
B
C
D
F
G
H
J
K
L
M
N
L
C
J
N
H
G
D
SEATING
PLANE
K
M
INCHES
MIN
MAX
0.715
0.770
0.240
0.260
0.145
0.185
0.015
0.021
0.040
0.070
0.100 BSC
0.052
0.095
0.008
0.015
0.115
0.135
0.300 BSC
0_
10_
0.015
0.039
MILLIMETERS
MIN
MAX
18.16
19.56
6.10
6.60
3.69
4.69
0.38
0.53
1.02
1.78
2.54 BSC
1.32
2.41
0.20
0.38
2.92
3.43
7.62 BSC
0_
10_
0.39
1.01
SOIC–14
D SUFFIX
CASE 751A–03
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
–A–
14
8
–B–
1
P 7 PL
0.25 (0.010)
7
G
B
M
M
R X 45 _
C
F
–T–
SEATING
PLANE
D 14 PL
0.25 (0.010)
M
K
M
T B
S
A
S
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5
J
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
8.55
8.75
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.337
0.344
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.228
0.244
0.010
0.019
MC74HC132A
Notes
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6
MC74HC132A
Notes
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7
MC74HC132A
ON Semiconductor and
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
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SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (M–F 1:00pm to 5:00pm Munich Time)
Email: ONlit–[email protected]
French Phone: (+1) 303–308–7141 (M–F 1:00pm to 5:00pm Toulouse Time)
Email: ONlit–[email protected]
English Phone: (+1) 303–308–7142 (M–F 12:00pm to 5:00pm UK Time)
Email: [email protected]
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
*Available from Germany, France, Italy, England, Ireland
CENTRAL/SOUTH AMERICA:
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: ONlit–[email protected]
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
001–800–4422–3781
Email: ONlit–[email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–8549
Phone: 81–3–5740–2745
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
http://onsemi.com
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