MC74HCT273A Octal D Flip−Flop with Common Clock and Reset with LSTTL−Compatible Inputs High−Performance Silicon−Gate CMOS The MC74HCT273A may be used as a level converter for interfacing TTL or NMOS outputs to High−Speed CMOS inputs. The HCT273A is identical in pinout to the LS273. This device consists of eight D flip−flops with common Clock and Reset inputs. Each flip−flop is loaded with a low−to−high transition of the Clock input. Reset is asynchronous and active low. • • • • • • • w Output Drive Capability: 10 LSTTL Loads TTL/NMOS Compatible Input Levels Outputs Directly Interface to CMOS, NMOS and TTL Operating Voltage Range: 4.5 to 5.5 V Low Input Current: 1.0 μA In Compliance with the Requirements Defined by JEDEC Standard No. 7A Chip Complexity: 284 FETs or 71 Equivalent Gates These devices are available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative. http://onsemi.com MARKING DIAGRAMS 20 PDIP−20 N SUFFIX CASE 738 20 1 20 1 20 MC74HCT273AN AWLYYWW 1 SOIC WIDE−20 DW SUFFIX CASE 751D HCT273A AWLYYWW 1 A WL YY WW = Assembly Location = Wafer Lot = Year = Work Week PIN ASSIGNMENT RESET 1 20 VCC Q0 2 19 Q7 D0 3 18 D7 D1 4 17 D6 Q1 5 16 Q6 Q2 6 15 Q5 D2 7 14 D5 D3 8 13 D4 Q3 9 12 Q4 10 11 CLOCK GND ORDERING INFORMATION Device MC74HCT273AN MC74HCT273ADW Package Shipping PDIP−20 1440 / Box SOIC−WIDE MC74HCT273ADWR2 SOIC−WIDE © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 10 1 38 / Rail 1000 / Reel Publication Order Number: MC74HCT273A/D MC74HCT273A LOGIC DIAGRAM D0 D1 D2 DATA INPUTS D3 D4 D5 D6 D7 CLOCK RESET 3 2 4 5 7 6 8 9 13 12 14 15 17 16 18 19 11 Q0 Q1 Q2 Q3 NONINVERTING OUTPUTS Q4 Q5 Q6 Q7 PIN 20 = VCC PIN 10 = GND 1 FUNCTION TABLE Inputs Output Reset Clock D Q L H H H H X X H L X X L H L No Change No Change L X = Don’t Care Z = High Impedance ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS* Symbol Parameter Value Unit VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V Iin DC Input Current, per Pin ± 20 mA Iout DC Output Current, per Pin ± 25 mA ICC DC Supply Current, VCC and GND Pins ± 50 mA PD Power Dissipation in Still Air 750 500 mW Tstg Storage Temperature – 65 to + 150 _C TL Lead Temperature, 1 mm from Case for 10 Seconds (SOIC or Plastic DIP) Plastic DIP† SOIC Package† This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND v (Vin or Vout) v VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. _C 260 *Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. †Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ RECOMMENDED OPERATING CONDITIONS Symbol VCC Vin, Vout Parameter Min DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) TA Operating Temperature, All Package Types tr, tf Input Rise and Fall Time (Figure 1) Max Unit 4.5 5.5 V 0 VCC V – 55 + 125 _C 0 500 ns http://onsemi.com 2 MC74HCT273A ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter Test Conditions VCC V – 55 to 25_C v 85_C v 125_C Unit VIH Minimum High−Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| v 20 μA 4.5 5.5 2.0 2.0 2.0 2.0 2.0 2.0 V VIL Maximum Low−Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| v 20 μA 4.5 5.5 0.8 0.8 0.8 0.8 0.8 0.8 V VOH Minimum High−Level Output Voltage Vin = VIH or VIL |Iout| v 20 μA 4.5 5.5 4.4 5.4 4.4 5.4 4.4 5.4 V Vin = VIH or VIL |Iout| v 4.0 mA 4.5 3.98 3.84 3.7 Vin = VIH or VIL |Iout| v 20 μA 4.5 5.5 0.1 0.1 0.1 0.1 0.1 0.1 Vin = VIH or VIL |Iout| v 4.0 mA 4.5 0.26 0.33 0.4 VOL Maximum Low−Level Output Voltage V Iin Maximum Input Leakage Current Vin = VCC or GND 5.5 ± 0.1 ± 1.0 ± 1.0 μA ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Iout = 0 μA 5.5 4.0 40 160 μA ΔICC Additional Quiescent Supply Current Vin = 2.4 V, Any One Input Vin = VCC or GND, Other Inputs lout = 0 μA 5.5 ≥ −55_C 25_C to 125_C 2.9 2.4 mA NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns) Guaranteed Limit Symbol Parameter Fig. – 55 to 25_C v 85_C v 125_C Unit fmax Maximum Clock Frequency (50% Duty Cycle) 1, 4 30 24 20 MHz tPLH, tPHL Maximum Propagation Delay, Clock to Q 1, 4 25 28 35 ns tPHL Maximum Propagation Delay, Reset to Q 2, 4 25 28 35 ns tTLH, tTHL Maximum Output Transition Time, Any Output 1, 5 18 20 22 ns NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). Typical @ 25°C, VCC = 5.0 V CPD 30 Power Dissipation Capacitance (Per Gate)* * Used to determine the no−load dynamic power consumption: PD = CPD VCC ON Semiconductor High−Speed CMOS Data Book (DL129/D). 2f + I http://onsemi.com 3 CC pF VCC . For load considerations, see Chapter 2 of the MC74HCT273A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ Î ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ Î ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ TIMING REQUIREMENTS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns) Guaranteed Limit – 55 to 25_C Symbol Parameter Fig. Min Max v 85_C Min Max v 125_C Min Max Unit tsu Minimum Setup Time, Data to Clock 3 10 12 15 ns th Minimum Hold Time, Clock to Data 3 3.0 3.0 3.0 ns trec Minimum Recovery Time, Set or Reset Inactive to Clock 2 5.0 5.0 5.0 ns tw Minimum Pulse Width, Clock 1 12 15 18 ns tw Minimum Pulse Width, Set or Reset 2 12 15 18 ns tr, tf Maximum Input Rise and Fall Times 1 http://onsemi.com 4 500 500 500 ns MC74HCT273A SWITCHING WAVEFORMS tr CLOCK tw tf 3.0 V 2.7 V 1.3 V 0.3 V tw GND Q GND tPHL 1/fmax 1.3 V Q tPHL tPLH 3.0 V 1.3 V RESET trec 90% 1.3 V 10% CLOCK tTLH 1.3 V tTHL Figure 1. Figure 2. TEST POINT VALID DATA 1.3 V tsu CLOCK OUTPUT 3.0 V DEVICE UNDER TEST GND th C L* 3.0 V 1.3 V GND *Includes all probe and jig capacitance Figure 3. Figure 4. Test Circuit EXPANDED LOGIC DIAGRAM D0 D1 D2 DATA INPUTS D3 D4 D5 D6 D7 CLOCK RESET C 3 DR C 4 DR C 7 DR C 8 DR C 13 DR C 14 DR C 17 DR C 18 DR Q Q Q Q Q Q Q Q 11 1 http://onsemi.com 5 2 5 6 9 12 15 16 19 Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7 NONINVERTING OUTPUTS 3.0 V GND MC74HCT273A PACKAGE DIMENSIONS PDIP−20 N SUFFIX PLASTIC DIP PACKAGE CASE 738−03 ISSUE E −A− 20 11 1 10 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. B L C −T− K SEATING PLANE G M N E F D J 20 PL 0.25 (0.010) 20 PL 0.25 (0.010) M T A M T B M M DIM A B C D E F G J K L M N INCHES MIN MAX 1.010 1.070 0.240 0.260 0.150 0.180 0.015 0.022 0.050 BSC 0.050 0.070 0.100 BSC 0.008 0.015 0.110 0.140 0.300 BSC 0_ 15_ 0.020 0.040 MILLIMETERS MIN MAX 25.66 27.17 6.10 6.60 3.81 4.57 0.39 0.55 1.27 BSC 1.27 1.77 2.54 BSC 0.21 0.38 2.80 3.55 7.62 BSC 0_ 15_ 0.51 1.01 SO−20 DW SUFFIX CASE 751D−05 ISSUE F A 20 q X 45 _ 1 10 20X B B 0.25 M T A S B S A L 0.25 E h H M 10X NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT MAXIMUM MATERIAL CONDITION. 11 B M D 18X e A1 SEATING PLANE C T http://onsemi.com 6 DIM A A1 B C D E e H h L q MILLIMETERS MIN MAX 2.35 2.65 0.10 0.25 0.35 0.49 0.23 0.32 12.65 12.95 7.40 7.60 1.27 BSC 10.05 10.55 0.25 0.75 0.50 0.90 0_ 7_ MC74HCT273A Notes http://onsemi.com 7 MC74HCT273A Notes ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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