DG2012 Vishay Siliconix Low-Voltage Single SPDT Analog Switch DESCRIPTION FEATURES The DG2012 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 17 ns, tOFF: 13 ns), low on-resistance (rDS(on): 1 Ω) and small physical size (SC70), the DG2012 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. • • • • • • The DG2012 is built on Vishay Siliconix’s low voltage submicron CMOS process. An epitaxial layer prevents latchup. Break-before -make is guaranteed for DG2012. BENEFITS Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. • • • • Low Voltage Operation (1.8 V to 5.5 V) Low On-Resistance - rDS(on): 1 Ω Typ. Fast Switching - tON: 17 ns, tOFF: 13 ns Low Leakage TTL/CMOS Compatible 6-Pin SC-70 Package Pb-free Available RoHS* COMPLIANT Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space APPLICATIONS • • • • • Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems Sample and Hold Circuits FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TRUTH TABLE SC-70 IN 1 6 NO (Source1) V+ 2 5 COM GND 3 4 NC (Source2) Top View Device Marking: E7xx Logic NC NO 0 ON OFF 1 OFF ON ORDERING INFORMATION Temp Range Package - 40 to 85 °C SC70-6 Part Number DG2012DL-T1 DG2012DL-T1-E3 * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 72176 S-70852-Rev. B, 30-Apr-07 www.vishay.com 1 DG2012 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit Referenced V+ to GND Unit - 0.3 to + 6 IN, COM, NC, NOa V - 0.3 to (V+ + 0.3) Continuous Current (NO, NC and COM Pins) ± 100 Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 300 Storage Temperature (D Suffix) Power Dissipation (Packages)b mA - 65 to 150 °C 250 mW 6-Pin SO70c Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 3.1 mW/°C above 70 °C. SPECIFICATIONS (V+ = 2.0 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 2.0 V, ± 10 %, VIN = 0.4 or 1.6 Ve Limits - 40 to 85 °C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch VNO, VNC VCOM Analog Signal Ranged rON On-Resistance rON Flatness rON Flatnessd ΔrON rON Matchd Switch Off Leakage Current f INO(off) INC(off) ICOM(off) Channel-On Leakage Currentf ICOM(on) V+ = 1.8 V, VCOM = 0.2 V/0.9 V INO, INC = 10 mA V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA V+ = 2.2 V VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V Room Fulld 2.7 2.7 5.3 5.3 Room 3 Room 0.25 Room Full - 0.5 - 5.0 0.5 5.0 Room Fulld - 0.5 - 5.0 0.5 5.0 Room Fulld - 0.5 - 5.0 0.5 5.0 1.6 Ω nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitanced f Cin IINL or IINH Input Current 0.4 Full VIN = 0 or V+ Full 3 -1 V pF 1 µA Dynamic Characteristics Turn-On Timed tON Turn-Off Timed tOFF Break-Before-Make Timed Charge Injection d d td QINJ Off-Isolation OIRR Crosstalkd XTALK NO, NC Off Capacitanced Channel-On Capacitanced www.vishay.com 2 VNO or VNC = 1.5 V, RL = 300 Ω, CL = 35 pF Figures 1 and 2 CNO(off) CNC(off) CON Room Fulld 43 63 65 Room Fulld 23 45 46 Room CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω, Figure 3 RL = 50 Ω, CL = 5 pF, f = 1 MHz VIN = 0 or V+, f = 1 MHz ns 2 Room 7 Room - 63 Room - 64 Room 22 Room 58 pC dB pF Document Number: 72176 S-70852-Rev. B, 30-Apr-07 DG2012 Vishay Siliconix SPECIFICATIONS (V+ = 3.0 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 3 V, ± 10 %, VIN = 0.6 or 2.0 Ve Limits - 40 to 85 °C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged VNO, VNC VCOM rON On-Resistance rON Flatness rON Flatness ΔrON rON MatchFlat Switch Off Leakage Currentf INO(off) INC(off) ICOM(off) Channel-On Leakage Currentf ICOM(on) V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO INC = 10 mA V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA Room Full 1.4 1.6 Room 0.85 Room V+ = 3.3 V VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V 2.1 2.3 Ω 0.25 Room Full - 0.5 - 5.0 0.5 5.0 Room Full - 0.5 - 5.0 0.5 5.0 Room Full - 0.5 - 5.0 0.5 5.0 2 nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitanced Cin Input Currentf IINL or IINH 0.6 Full VIN = 0 or V+ Full 3 -1 V pF 1 µA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Charge Injection Off-Isolation d d Crosstalkd 27 VNO or VNC = 2.0 V, RL = 300 Ω, CL = 35 pF Figures 1 and 2 Room Full 47 48 Room Full 17 37 38 CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω, Figure 3 Room 10 Room - 63 Room - 64 Room 21 Room 57 td QINJ OIRR XTALK NO, NC Off Capacitanced CNO(off) CNC(off) Channel-On Capacitanced CON Room RL = 50 Ω, CL = 5 pF, f = 1 MHz VIN = 0 or V+, f = 1 MHz ns 1 pC dB pF Power Supply Power Supply Range Power Supply Current Document Number: 72176 S-70852-Rev. B, 30-Apr-07 V+ I+ 1.8 VIN = 0 or V+ 0.01 5.5 V 1.0 µA www.vishay.com 3 DG2012 Vishay Siliconix SPECIFICATIONS (V+ = 5.0 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 5 V, ± 10 %, VIN = 0.8 or 2.4 Ve Limits - 40 to 85 °C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged VNO, VNC VCOM rON On-Resistance rON Flatness rON Flatnessd ΔrON rON Matchd Switch Off Leakage Current INO(off) INC(off) ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 4.5 V, VCOM = 0.5 V/2.5 V INO, INC = 10 mA V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA V+ = 5.0 V VNO, VNC = 0.5 V/4.5 V, VCOM = 4.5 V/0.5 V V+ = 5.0 V, VNO, VNC = VCOM = 0.5 V/4.5 V Room Full 1.0 1.2 1.8 1.9 Room 0.55 Room 0.25 Room Full - 0.5 - 5.0 0.5 5.0 Room Full - 0.5 - 5.0 0.5 5.0 Room Full - 0.5 - 5.0 0.5 5.0 2.4 Ω nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Cin IINL or IINH Input Current 0.8 Full VIN = 0 or V+ Full 3 -1 V pF 1 µA Dynamic Characteristics Turn-On Timed tON Turn-Off Timed tOFF Break-Before-Make Timed Charge Injection d d td QINJ Off-Isolation OIRR Crosstalkd XTALK Source-Off Capacitanced Channel-On Capacitanced VNO or VNC = 3 V, RL = 300 Ω, CL = 35 pF Figures 1 and 2 CNO(off) CNC(off) CON Room Full 17 38 39 Room Full 13 32 33 Room CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω, Figure 3 RL = 50 Ω, CL = 5 pF, f = 1 MHz VIN = 0 or V+, f = 1 MHz ns 1 Room 20 Room - 63 Room - 64 Room 20 Room 56 pC dB pF Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 72176 S-70852-Rev. B, 30-Apr-07 DG2012 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 6 IS = 10 mA IS = 10 mA 5 r ON - On-Resistance (Ω) r ON - On-Resistance (Ω) 5 4 V+ = 1.8 V 3 V+ = 2 V 2 V+ = 3 V V+ = 5 V 4 V+ = 2 V 85 °C 25 °C V+ = 3 V 85 °C - 40 °C 25 °C - 40 °C 3 2 1 1 0 0 V+ = 5 V 85 °C 25 °C - 40 °C 0 1 2 3 4 0 5 1 2 4 5 VCOM - Analog Voltage (V) VCOM - Analog Voltage (V) rON vs. Analog Voltage and Temperature rON vs. VCOM and Supply Voltage 10 m 10000 V+ = 5 V VIN = 0 V V+ = 3 V 1m 100 µ 1000 I+ - Supply Current (A) I+ - Supply Current (nA) 3 100 10 10 µ 1µ 100 n 10 n 1n 1 - 60 100 p - 40 - 20 0 20 40 60 80 100 10 Temperature (°C) 100 1K 10 K 100 K 1M 10 M Input Switching Frequency (Hz) Supply Current vs. Temperature Supply Current vs. Input Switching Frequency 250 1000 V+ = 5 V V+ = 5 V T = 25 °C 200 150 INO(off)/INC(off) 10 Leakage Current (pA) Leakage Current (pA) 100 ICOM(on) ICOM(off) 100 50 ICOM(on) 0 - 50 INO(off)/INC(off) - 100 1 - 150 ICOM(off) 0.1 - 60 - 200 - 250 - 40 - 20 0 20 40 60 Temperature (°C) Leakage Current vs. Temperature Document Number: 72176 S-70852-Rev. B, 30-Apr-07 80 100 0 1 2 3 4 5 VCOM, V NO, V NC - Analog Voltage Leakage vs. Analog Voltage www.vishay.com 5 DG2012 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted t ON, 10 tON V+ = 2 V 45 0 40 - 10 Loss, OIRR, XTALK (dB) t OFF - Switching Time (ns) 50 35 tON V+ = 3 V 30 25 tOFF V+ = 2 V 20 tOFF V+ = 3 V 15 tON V+ = 5 V 10 tOFF V+ = 5 V LOSS - 20 - 30 - 40 OIRR - 50 XTALK - 60 - 70 5 - 80 0 - 60 - 40 - 20 0 20 40 60 80 - 90 100 K 100 1M Temperature (°C) 10 M 100 M 1G Frequency (Hz) Switching Time vs. Temperature and Supply Voltage Insertion Loss, Off-Isolation Crosstalk vs. Frequency 3.0 30 2.5 20 Q - Charge Injection (pC) V T - Switching Threshold (V) V+ = 5 V RL = 50 Ω 2.0 1.5 1.0 V+ = 5 V 10 V+ = 3 V 0 V+ = 2 V - 10 - 20 0.5 - 30 0.0 0 www.vishay.com 6 1 2 3 4 5 6 7 0 1 2 3 4 5 V+ - Supply Voltage (V) VCOM - Analog Voltage (v) Switching Threshold vs. Supply Voltage Charge Injection vs. Analog Voltage 6 Document Number: 72176 S-70852-Rev. B, 30-Apr-07 DG2012 Vishay Siliconix TEST CIRCUITS V+ VINH Logic Input VINL V+ Switch Input Switch Output COM NO or NC tr < 5 ns tf < 5 ns 50 % VOUT 0.9 x VOUT Switch Output IN Logic Input RL 300 Ω GND CL 35 pF 0V tOFF tON Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) RL VOUT = VCOM R L + R ON Figure 1. Switching Time V+ Logic Input V+ tr < 5 ns tf < 5 ns VINL COM NO VNO VINH VO NC VNC RL 300 Ω IN CL 35 pF VNC = VNO VO GND Switch Output 90 % 0V tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ Rgen ΔVOUT V+ COM NC or NO VOUT VOUT + Vgen IN CL = 1 nF IN On Off On GND Q = ΔVOUT x CL VIN = 0 - V+ IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection Document Number: 72176 S-70852-Rev. B, 30-Apr-07 www.vishay.com 7 DG2012 Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ NC or NO 0 V, 2.4 V IN COM RL V COM Off Isolation = 20 log V NO/ NC GND Analyzer Figure 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72176. www.vishay.com 8 Document Number: 72176 S-70852-Rev. B, 30-Apr-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1