DG2799 New Product Vishay Siliconix 0.25-W CMOS, 1.65-V to 4.3-V, Dual DPDT Analog Switch FEATURES BENEFITS D Low Voltage Operation (1.65 V to 4.3 V) D Low On-Resistance - rON: 0.25 W @ 2.7 V D Fast Switching: tON = 28 ns tOFF = 17 ns D QFN-16 (3x3) Package D Latch-Up Current >300 mA (JESD78) D D D D D APPLICATIONS Reduced Power Consumption High Accuracy Reduce Board Space TTL/1.8-V Logic Compatible High Bandwidth D D D D D Cellular Phones Speaker Headset Switching Audio and Video Signal Routing PCMCIA Cards Battery Operated Systems DESCRIPTION The DG2799 is a dual double-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed, low on-resistance and small physical size, the DG2799 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG2799 is built on Vishay Siliconix’s low voltage process. An epitaxial layer prevents latchup. Break-before-make is guaranteed. As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with the lead (Pb)-free device terminations. For analog switching products manufactured in QFN packages, the lead (Pb)-free “−E3/E4” suffix is being used as a designator. Lead (Pb)-free QFN products purchased at any time will have either a nickel-palladium-gold device termination or a 100% matte tin device termination. The different lead (Pb)-free materials are interchangeable and meet all JEDEC standards for reflow and MSL rating. The switch conducts equally well in both directions when on, and blocks up to the power supply level when off. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG2799 QFN-16 (3 X 3) COM1 NO1 16 15 V+ NC4 14 13 TRUTH TABLE Logic NC1 1 12 COM4 IN1, IN2 2 11 NO4 NO2 3 10 IN3, IN4 COM2 NC1, 2, 3 and 4 NO1, 2, 3 and 4 0 ON OFF 1 OFF ON ORDERING INFORMATION 4 9 5 6 NC2 GND 7 NC3 Temp Range Package Part Number -40 to 85°C 16-Pin QFN (3 x 3 mm) Variation 2 DG2799DN-T1—E3/E4 8 NO3 COM3 Top View NOTE: Underside exposed pad has no device electrical connection. It is recommended that no electrical connection is made to it. Document Number: 72922 S-41957—Rev. B, 25-Oct-04 www.vishay.com 1 DG2799 New Product Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +5.0 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Current (Any terminal except NO, NC or COM) . . . . . . . . . . . . . . . . . . 30 mA Continuous Current (NO, NC, or COM) . . . . . . . . . . . . . . . . . . . . . "300 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "500 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C Package Solder Reflow Conditionsd 16-Pin QFN (3 x 3 mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250°C Power Dissipation (Packages)b QFN-16c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1385 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 17.3 mW/_C above 70_C d. Manual soldering with iron is not recommended for leadless components. The QFN is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (V+ = 1.8 V) Limits Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 1.8 V, VIN = 0.4 or 1.1 Ve −40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V 1.3 1.4 W Analog Switch Analog Signal Ranged On-Resistance VNO, VNC, VCOM rON V+ = 1.8 V, VCOM = 0.2 V/0.9 V, INO, INC = 100 mA Room Full 0.47 Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Input Current 0.4 Full Cin IINL or IINH 1.1 VIN = 0 or V+ Full 6 −1 V pF 1 mA Dynamic Characteristics Room Full 62 94 97 VNO or VNC = 1.5 V, RL = 50 W, CL = 35 pF Room Full 24 52 55 CL = 1 nF, VGEN = 0 V, RGEN = 0 W Room 66 Room −74 Room −74 CNO(off) Room 108 CNC(off) Room 108 Room 240 Room 240 Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Charge Injectiond td QINJ Off-Isolationd OIRR Crosstalkd XTALK NO, NC Off Capacitanced Channel On Capacitanced Channel-On CNO(on) Full RL = 50 W, W CL = 5 pF pF, f = 100 kHz VIN = 0 or V+, V+ f = 1 MHz CNC(on) ns 8 pC dB pF Power Supply Power Supply Current www.vishay.com 2 I+ VIN = 0 or V+ Full 1.0 mA Document Number: 72922 S-41957—Rev. B, 25-Oct-04 DG2799 New Product Vishay Siliconix SPECIFICATIONS (V+ = 3 V) Limits Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 3 V, "10%, VIN = 0.5 or 1.4 Ve −40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged VNO, VNC, VCOM On-Resistance rON rON Flatnessd rON Flatness rON Matchd Switch Off Leakage Current DrON INO(off), INC(off) ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA V+ = 2.7 V VCOM = 0 to V+, V+ INO, INC = 100 mA V+ = 3.3 V, VNO, VNC = 0.3 V/3.0 V VCOM = 3.0 V/0.3 V V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3.0 V Room Full 0.3 0.45 0.55 Room 0.07 0.15 Room 0.05 Room Full −1 −10 1 10 Room Full −1 −10 1 10 Room Full −1 −10 1 10 1.4 W nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Input Current Full Cin IINL or IINH 0.5 VIN = 0 or V+ Full 6 −1 V pF 1 mA Dynamic Characteristics Room Full 28 57 60 VNO or VNC = 1.5 V, RL = 50 W, CL = 35 pF Room Full 17 45 47 CL = 1 nF, VGEN = 0 V, RGEN = 0 W Room 160 Room −75 Room −75 CNO(off) Room 102 CNC(off) Room 102 Room 234 Room 234 Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time td Charge Injectiond QINJ Off-Isolationd OIRR Crosstalkd XTALK NO, NC Off Capacitanced Channel On Capacitanced Channel-On CNO(on) Full RL = 50 W, W CL = 5 pF pF, f = 100 kHz VIN = 0 or V+, V+ f = 1 MHz CNC(on) ns 1 pC dB pF Power Supply Power Supply Range V+ Power Supply Current I+ Document Number: 72922 S-41957—Rev. B, 25-Oct-04 2.7 VIN = 0 or V+ Full 3.3 V 1.0 mA www.vishay.com 3 DG2799 New Product Vishay Siliconix SPECIFICATIONS (V+ = 4.3 V) Limits Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 4.3 V, VIN = 0.5 or 1.6 Ve −40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged VNO, VNC, VCOM On-Resistance rON rON Flatnessd rON Flatness rON Matchd Switch Off Leakage Currentd DrON INO(off), INC(off) ICOM(off) Channel-On Leakage Currentd ICOM(on) V+ = 4.3 V, VCOM = 0.5 V/2.1 V, INO, INC = 100 mA V+ = 4.3 V VCOM = 0 to V+, V+ INO, INC = 100 mA V+ = 4.3 V, VNO, VNC = 0.3 V/4.0 V VCOM = 4.0 V/0.3 V V+ = 4.3 V, VNO, VNC = VCOM = 0.3 V/4.0 V Room Full 0.29 0.43 0.53 Room 0.07 0.15 Room 0.05 Room Full −10 −100 10 100 Room Full −10 −100 10 100 Room Full −10 −100 10 100 1.6 W nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Cin Full Input Current 0.5 6 IINL or IINH VIN = 0 or V+ Full −1 Charge Injectiond QINJ CL = 1 nF, VGEN = 0 V, RGEN = 0 W Room 320 Off-Isolationd OIRR Room −73 Crosstalkd XTALK Room −73 CNO(off) Room 100 CNC(off) Room 100 Room 230 Room 230 V pF 1 mA Dynamic Characteristics NO, NC Off Capacitanced Channel On Capacitanced Channel-On CNO(on) RL = 50 W, W CL = 5 pF pF, f = 100 kHz VIN = 0 or V+, V+ f = 1 MHz CNC(on) pC dB pF Power Supply Power Supply Range V+ Power Supply Current I+ VIN = 0 or V+ Full 4.3 V 1.0 mA Notes: a. b. c. d. e. Room = 25°C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, not subjected to production test. VIN = input voltage to perform proper function. www.vishay.com 4 Document Number: 72922 S-41957—Rev. B, 25-Oct-04 DG2799 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rON vs. VCOM and Supply Voltage rON vs. Analog Voltage and Temperature 0.8 0.8 V+ = 1.65 V 0.6 T = 25_C IS = 100 mA NC Switch V+ = 1.8 V 0.7 r ON − On-Resistance ( W ) r ON − On-Resistance ( W ) 0.7 V+ = 2.0 V 0.5 V+ = 2.3 V V+ = 2.7 V 0.4 V+ = 3.0 V 0.3 0.2 V+ = 3.3 V 0.1 0.0 0.0 0.5 1.0 1.5 2.0 2.5 V+ = 3.6 V 3.0 3.5 IS = 100 mA V+ = 3 V 0.6 85_C 0.5 25_C 0.4 −40_C 0.3 0.2 0.1 0.0 0.0 4.0 0.5 1.0 VCOM − Analog Voltage (V) rON vs. Analog Voltage and Temperature 2.0 2.5 3.0 Supply Current vs. Temperature 0.6 10000 IS = 100 mA V+ = 4.3 V 0.5 V+ = 3 V VIN = 0 V 1000 85_C 0.4 I+ − Supply Current (nA) r ON − On-Resistance ( W ) 1.5 VCOM − Analog Voltage (V) 25_C −40_C 0.3 0.2 100 10 0.1 0.0 1 0 1 2 3 4 5 −60 −40 −20 VCOM − Analog Voltage (V) 20 40 60 80 100 Temperature (_C) Leakage Current vs. Temperature Supply Current vs. Input Switching Frequency 1000 100 mA V+ = 3.3 V 10 mA V+ = 2.7 V 1 mA Leakage Current (pA) I+ − Supply Current (A) 0 100 mA 10 mA 1 mA 100 nA INO(off), INC(off) 100 ICOM(off) ICOM(on) 10 10 nA 1 nA 100 pA 10 100 1K 10 K 100 K 1M Input Switching Frequency (Hz) Document Number: 72922 S-41957—Rev. B, 25-Oct-04 10 M 1 −60 −40 −20 0 20 40 60 80 100 Temperature (_C) www.vishay.com 5 DG2799 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 250 Leakage Current (pA) 200 Leakage vs. Analog Voltage V+ = 3.3 V ICOM(off) 150 INO(off), IINC(off) 100 50 0 −50 ICOM(on) −100 Switching Time vs. Temperature 70 t ON / t OFF − Switching Time (m s) 300 −150 −200 tON V+ = 1.8 V 60 50 tON V+ = 2.3 V 40 tON V+ = 3.0 V 30 20 tOFF V+ = 1.8 V 10 tOFF V+ = 2.3 V −250 −300 0.00 0.50 1.00 1.50 2.00 2.50 0 −60 3.00 −40 −20 0 Insertion Loss, Off-Isolation Crosstalk vs. Frequency − Switching Threshold (V) −30 OIRR −50 V+ = 3 V RL = 50 W 10 M 100 1.50 1.25 1.00 0.75 100 M 0.50 0.25 0.00 1.0 −90 1M 80 1.75 VT Loss, OIRR, X TALK (dB) LOSS XTALK 100 K 60 Switching Threshold vs. Supply Voltage 2.00 10 −70 40 Temperature (_C) VCOM, VNO, VNC − Analog Voltage (V) −10 20 tOFF V+ = 3.0 V 1G 1.5 2.0 Frequency (Hz) 2.5 3.0 3.5 4.0 4.5 5.0 V+ − Supply Voltage (V) Charge Injection vs. Analog Voltage 150 100 V+ = 1.8 V V+ = 3 V Q − Charge Injection (pC) 50 0 −50 V+ = 4.3 V −100 −150 −200 −250 −300 −350 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCOM − Analog Voltage (V) www.vishay.com 6 Document Number: 72922 S-41957—Rev. B, 25-Oct-04 DG2799 New Product Vishay Siliconix TEST CIRCUITS V+ VINH Logic Input V+ Logic Input VOUT RL 50 W 0.9 x VOUT Switch Output IN GND CL 35 pF 0V tON 0V ǒ RL tOFF Logic “1” = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT + VCOM tr t 5 ns tf t 5 ns VINL Switch Output COM NO or NC Switch Input 50% Ǔ R L ) R ON Switching Time Figure 1. V+ Logic Input V+ COM NO VNO VINH tr <5 ns tf <5 ns VINL VO NC VNC RL 50 W IN CL 35 pF GND VNC = VNO VO 90% Switch 0V Output tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ Rgen + Vgen VIN = 0 − V+ V+ NC or NO COM IN VOUT DVOUT VOUT CL = 1 nF IN On Off On GND Q = DVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Document Number: 72922 S-41957—Rev. B, 25-Oct-04 Figure 3. Charge Injection www.vishay.com 7 DG2799 New Product Vishay Siliconix TEST CIRCUITS V+ V+ 10 nF 10 nF V+ V+ NC or NO IN COM COM Meter 0 V, 2.4 V RL Analyzer COM 0V, 2.4 V IN NC or NO GND HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz VCOM Off Isolation + 20 log V NOńNC Figure 4. Off-Isolation Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73162. www.vishay.com 8 Document Number: 72922 S-41957—Rev. B, 25-Oct-04