DG308B, DG309B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG308B, DG309B analog switches are highly improved versions of the industry-standard DG308A, DG309. These devices are fabricated in Vishay Siliconix’ proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. • • • • • • • • These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. The DG308B and DG309B can handle up to ± 22 V input signals. An epitaxial layer prevents latchup. All devices feature true bi-directional performance in the on condition, and will block signals to the supply levels in the off condition. The DG308B is a normally open switch and the DG309B is a normally closed switch. (see Truth Table.) ± 22 V supply voltage rating CMOS compatible logic Low on-resistance - RDS(on): 45 Low leakage - ID(on): 20 pA Single supply operation possible Extended temperature range Fast switching - tON: < 200 ns Low glitching - Q: 1 pC BENEFITS • • • • • • • Wide analog signal range Simple logic interface Higher accuracy Minimum transients Reduced power consumption Superior to DG308A, DG309 Space savings (TSSOP) APPLICATIONS • • • • • • • Industrial instrumentation Test equipment Communications systems Disk drives Computer peripherals Portable instruments Sample-and-hold circuits FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG308B Dual-In-Line, SOIC and TSSOP IN1 D1 S1 VGND S4 D4 IN4 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 IN2 D2 TRUTH TABLE Logic 0 1 S2 V+ NC DG308B OFF ON DG309B ON OFF Logic “0” 3.5 V Logic “1” 11 V S3 D3 IN3 Top View * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70047 S11-0303-Rev. G, 28-Feb-11 www.vishay.com 1 DG308B, DG309B Vishay Siliconix ORDERING INFORMATION Temp. Range Package Part Number DG308BDJ DG308BDJ-E3 16-Pin PlasticDIP DG309BDJ DG309BDJ-E3 DG308BDY DG308BDY-E3 DG308BDY-T1 DG308BDY-T1-E3 16-Pin Narrow SOIC DG309BDY DG309BDY-E3 DG309BDY-T1 DG309BDY-T1-E3 - 40 °C to 85 °C DG308BDQ DG308BDQ-E3 DG308BDQ-T1 DG308BDQ-T1-E3 16-Pin TSSOP DG309BDQ DG309BDQ-E3 DG309BDQ-T1 DG309BDQ-T1-E3 ABSOLUTE MAXIMUM RATINGS Parameter Limit Voltages Referenced, V+ to VGND 25 (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first Digital Inputsa, VS, VD Current, Any Terminal 30 Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.) 100 Storage Temperature Power Dissipation (Package)b Unit 44 (AK Suffix) - 65 to 150 (DJ, DY and DQ Suffix) - 65 to 125 16-Pin Plastic DIPc 470 16-Pin Narrow SOIC and TSSOPd 640 16-Pin CerDIPe 900 V mA °C mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6.5 mW/°C above 75 °C. d. Derate 7.6 mW/°C above 75 °C. e. Derate 12 mW/°C above 75 °C. www.vishay.com 2 Document Number: 70047 S11-0303-Rev. G, 28-Feb-11 DG308B, DG309B Vishay Siliconix SPECIFICATIONSa Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance RDS(on) Match Symbol Test Conditions Unless Specified V+ = 15 V, V- = - 15 V VIN = 11 V, 3.5 Vf VANALOG RDS(on) RDS(on) VD = ± 10 V, IS = 1 mA A Suffix D Suffix - 55 °C to 125 °C - 40 °C to 85 °C Temp.b Full Room Full Room Room Full Room Full Room Full Source Off Leakage Current IS(off) VS = ± 14 V, VD = ± 14 V Drain Off Leakage Current ID(off) VD = ± 14 V, VS = ± 14 V Drain On Leakage Current ID(on) VS = VD = ± 14 V Digital Control Input, Voltage High VINH Full Input, Voltage Low VINL Full Input Current Input Capacitance IINH or IINL Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Charge Injection VINH or VINL Q VS = 3 V, see figure 2 CL = 1000 pF, Vg = 0 V, Rg = 0 ± 0.01 ± 0.02 0.5 20 0.5 20 0.5 40 - 0.5 -5 - 0.5 -5 - 0.5 - 10 0.5 5 0.5 5 0.5 10 11 1 3.5 -1 1 Room 1 5 5 Off-Isolation Channel-to-Channel Crosstalk Power Supply OIRR CL = 15 pF, RL = 50 VS = 1 VRMS, f = 100 kHz Room 90 Room 95 nA V µA pF 200 Room % - 0.5 - 20 - 0.5 - 20 - 0.5 - 40 150 16 Document Number: 70047 S11-0303-Rev. G, 28-Feb-11 V 200 Room VOP 15 85 100 150 Room Power Supply Range for Continuous Operation - 15 Room VD = VS = 0 V, f = 1 MHz VIN = 0 V or 15 V 15 85 100 Room CD(on) I- - 15 -1 Channel-On Capacitance Negative Supply Current Unit 5 CD(off) I+ Max.d 3.5 Drain-Off Capacitance Positive Supply Current Min.d 11 CS(off) XTALK Max.d 2 ± 0.01 Source-Off Capacitance VS = 0 V, f = 1 MHz, Min.d 45 Full Room CIN Typ.c ns pC pF dB Room Full Room Full 1 5 -1 -5 Full ±4 1 5 -1 -5 ± 22 ±4 ± 22 µA V www.vishay.com 3 DG308B, DG309B Vishay Siliconix SPECIFICATIONSa (for Single Supply) Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance Dynamic Characteristics Turn-On Time Turn-Off Time Charge Injection Symbol Test Conditions Unless Specified V+ = 12 V, V- = 0 V VIN = 11 V, 3.5 Vf Temp.b Typ.c VD = 3 V, 8 V, IS = 1 mA Full Room Full 90 VANALOG RDS(on) tON tOFF Q VS = 8 V, see figure 2 A Suffix D Suffix - 55 °C to 125 °C - 40 °C to 85 °C Min.d Max.d Min.d Max.d Unit 0 12 160 200 0 12 160 200 V Room 300 300 Room 200 200 CL = 1 nF, Vgen = 6 V, Rgen = 0 Room VIN = 0 V or 12 V Room Full Room Full -1 -5 Full 4 4 ns pC Power Supply Positive Supply Current I+ Negative Supply Current I- Power Supply Range for Continuous Operation VOP 1 5 1 5 -1 -5 44 4 44 µA V Notes: a. Refer to PROCESS OPTION FLOWCHART . b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 70047 S11-0303-Rev. G, 28-Feb-11 DG308B, DG309B Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 R DS(on) - Drain-Source On-Resistance () R DS(on) - Drain-Source On-Resistance () 110 100 90 ±5V 80 70 ± 10 V 60 50 ± 15 V 40 ± 20 V 30 20 80 70 60 125 °C 50 85 °C 40 25 °C 30 - 55 °C 20 10 0 10 - 20 - 16 - 12 -8 -4 0 4 8 12 16 20 - 15 - 10 -5 5 10 VD - Drain Voltage (V) RDS(on) vs. VD and Power Supply Voltages RDS(on) vs. VD and Temperature 15 40 225 V+ = 5 V V+ = 22 V V- = - 22 V TA = 25 °C 30 200 20 150 I S, I D - Current (pA) 175 7V 125 10 V 100 12 V 15 V 75 ID(on) 10 IS(off), ID(off) 0 - 10 - 20 50 - 30 25 0 0 2 4 6 8 10 12 14 - 40 - 20 16 - 15 - 10 -5 VD - Drain Voltage (V) 0 5 10 15 20 Analog Voltage Leakage Currents vs. Analog Voltage RDS(on) vs. VD and Single Power Supply Voltages 30 1 nA V+ = 15 V V- = - 15 V VS, V D = ± 14 V 20 Q - Charge (pC) I S, I D - Current 0 VD - Drain Voltage (V) 250 RDS(on) - Drain-Source On-Resistance () V+ = 15 V V- = - 15 V 90 100 pA IS(off), ID(off) 10 pA 10 V+ = 15 V V- = - 15 V 0 V+ = 12 V V- = 0 V - 10 - 20 1 pA - 55 - 35 - 15 5 25 45 65 85 105 125 Temperature (°C) Leakage Currents vs. Temperature Document Number: 70047 S11-0303-Rev. G, 28-Feb-11 - 30 - 15 - 10 -5 0 5 10 15 Analog Voltage (V) QS, QD - Charge Injection vs. Analog Voltage www.vishay.com 5 DG308B, DG309B Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 120 V+ = 15 V V- = - 15 V 110 OIRR (dB) 100 90 RL = 50 80 70 60 50 40 10 k 100 k 1M 10 M f - Frequency (Hz) Off Isolation vs. Frequency SCHEMATIC DIAGRAM (Typical Channel) V+ SX V- Level Shift/ Drive V+ INX DX GND V– Figure 1. www.vishay.com 6 Document Number: 70047 S11-0303-Rev. G, 28-Feb-11 DG308B, DG309B Vishay Siliconix TEST CIRCUITS + 15 V V+ D S VS = + 3 V VO Logic Input tr < 20 ns tf < 20 ns 12 V 50 % 0V tOFF IN V- GND CL 35 pF RL 1 k 12 V 90 % Switch Output VO tON - 15 V RL VO = V S RL + R DS(on) Figure 2. Switching Time C + 15 V + 15 V C V+ S1 VS V+ S VS Rg= 50 VO D D1 50 IN1 Rg = 50 0 V, 15 V 50 IN S2 NC 0 V, 15 V GND V- C 50 IN2 0 V, 15 V GND - 15 V Off Isolation = 20 log C = RF bypass XTA LK Isolation = 20 log VS VO Figure 3. Off Isolation - 15 V VO VO V+ S D VO CL 1000 pF 12 V GND C Figure 4. Channel-to-Channel Crosstalk IN Vg V- VS VO + 15 V Rg VO D2 INX ON OFF ON VV O = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x VO - 15 V Figure 5. Charge Injection Document Number: 70047 S11-0303-Rev. G, 28-Feb-11 www.vishay.com 7 DG308B, DG309B Vishay Siliconix APPLICATIONS 30 pF +5V VIN1 + 15 V + 15 V V+ VL + LM101A VIN2 + 15 V - DG419 - 15 V RF1 18 k RF1 9.9 k RF1 100 k Rg1 2 k Rg2 100 Rg3 100 DG308B CH V- GND - 15 V Gain = Gain 1 (x 1) RF + Rg Gain 2 (x 10) Rg Gain 3 (x 100) Gain 4 (x 1000) V- GND Logic High = Switch On - 15 V Figure 6. A Precision Amplifier with Digitally Programmable Inputs and Gains 15 V V+ Logic Input Low = Sample High = Hold 1 k + 15 V + 15 V - 15 V - J202 LM101A VIN + 5 M 50 pF 200 2N4400 5.1 M DG309B V30 pF Aquisition Time Aperature Time Sample to Hold Offset Droop Rate - 15 V VOUT 1000 pF J500 J507 - 15 V = 25 µs = 1 µs = 5 mV = 5 mV/s Figure 7. Sample-and-Hold www.vishay.com 8 Document Number: 70047 S11-0303-Rev. G, 28-Feb-11 DG308B, DG309B Vishay Siliconix APPLICATIONS + 15 V 160 V1 C4 fC3 Select TTL Control 150 pF 120 C3 1500 pF Voltage Gain dB fC4 Select C2 fC2 Select 0.015 μF fC1 Select 0.15 µF C1 80 fC2 fC1 fC3 fL1 0 V- DG309B fC4 40 fL2 fL3 fL4 GND - 40 1 - 15 V 10 100 1k R3 = 1 M + 15 V - 15 V R1 = 10 k LM101A + R2 = 10 k VOUT AL (Voltage Gain Below Break Frequency) = 1 fC (Break Frequency) = 2R3CX 100 k 1M Max Attenuation = R DS(on) 10 k R3 R1 = 100 (40 dB) 1 2R1CX fL (Unity Gain Frequency) = 30 pF 10 k Frequency – Hz - 40 dB Figure 8. Active Low Pass Filter with Digitally Selected Break Frequency Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70047. Document Number: 70047 S11-0303-Rev. G, 28-Feb-11 www.vishay.com 9 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Package Information Vishay Siliconix PDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E E1 1 2 3 4 5 6 7 8 D S Q1 A A1 L 15° MAX C B1 e1 Dim A A1 B B1 C D E E1 e1 eA L Q1 S B eA MILLIMETERS Min Max INCHES Min Max 3.81 5.08 0.150 0.200 0.38 1.27 0.015 0.050 0.38 0.51 0.015 0.020 0.89 1.65 0.035 0.065 0.20 0.30 0.008 0.012 18.93 21.33 0.745 0.840 7.62 8.26 0.300 0.325 5.59 7.11 0.220 0.280 2.29 2.79 0.090 0.110 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 1.27 2.03 0.050 0.080 0.38 1.52 .015 0.060 ECN: S-03946—Rev. D, 09-Jul-01 DWG: 5482 Document Number: 71261 06-Jul-01 www.vishay.com 1 Package Information Vishay Siliconix CERDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E1 E 1 2 3 4 5 6 7 8 D S Q1 A A1 L1 L e1 C B B1 MILLIMETERS Dim A A1 B B1 C D E E1 e1 eA L L1 Q1 S ∝ eA INCHES Min Max Min Max 4.06 5.08 0.160 0.200 0.51 1.14 0.020 0.045 0.38 0.51 0.015 0.020 1.14 1.65 0.045 0.065 0.20 0.30 0.008 0.012 19.05 19.56 0.750 0.770 7.62 8.26 0.300 0.325 6.60 7.62 0.260 0.300 2.54 BSC ∝ 0.100 BSC 7.62 BSC 0.300 BSC 3.18 3.81 0.125 0.150 3.81 5.08 0.150 0.200 1.27 2.16 0.050 0.085 0.38 1.14 0.015 0.045 0° 15° 0° 15° ECN: S-03946—Rev. G, 09-Jul-01 DWG: 5403 Document Number: 71282 03-Jul-01 www.vishay.com 1 Package Information Vishay Siliconix TSSOP: 16-LEAD DIMENSIONS IN MILLIMETERS Symbols Min Nom Max A - 1.10 1.20 A1 0.05 0.10 0.15 A2 - 1.00 1.05 0.38 B 0.22 0.28 C - 0.127 - D 4.90 5.00 5.10 E 6.10 6.40 6.70 E1 4.30 4.40 4.50 e - 0.65 - L 0.50 0.60 0.70 L1 0.90 1.00 1.10 y - - 0.10 θ1 0° 3° 6° ECN: S-61920-Rev. D, 23-Oct-06 DWG: 5624 Document Number: 74417 23-Oct-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.152 0.022 0.050 0.028 (0.559) (1.270) (0.711) (3.861) 0.246 (6.248) 0.047 (1.194) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 24 Document Number: 72608 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1