DG508B, DG509B Vishay Siliconix Precision 8-Channel/Dual 4-Channel CMOS Analog Multiplexers DESCRIPTION FEATURES The DG508B is an 8-channel single-ended analog multiplexer designed to connect one of eight inputs to a common output as determined by a 3-bit binary address (A0, A1, A2). The DG509B is a dual 4-channel differential analog multiplexer designed to connect one of four differential inputs to a common dual output as determined by its 2-bit binary address (A0, A1). Break-before-make switching action protects against momentary crosstalk between adjacent channels. An on channel conducts current equally well in both directions. In the off state each channel blocks voltages up to the power supply rails. An enable (EN) function allows the user to reset the multiplexer/demultiplexer to all switches off for stacking several devices. All control inputs, addresses (Ax) and enable (EN) are TTL compatible over the full specified operating temperature range. The DG508B and DG509B are fabricated on an enhanced SG-II CMOS process that achieves improved performance on: reduced charge injection, lower device leakage, and minimized parasitic capacitance. As the DG508, DG509 has a long history in the industry with many suppliers offering copies - and in some cases improved variations - with the best in class improvements, the Vishay Siliconix new version of the DG508B, DG509B are the superior alternatives to what is currently available. Applications for the DG508B, DG509B include high speed and high precision data acquisition, audio signal switching and routing, ATE systems, and avionics. High performance and low power dissipation make them ideal for battery operated and remote instrumentation applications. The DG508B and DG509B have the absolute maximum voltage rating extended to 44 V. Additionally, single supply operation is also allowed. An epitaxial layer prevents latch-up. The DG508B and DG509B are both available in 16-lead SOIC, TSSOP, PDIP, and miniQFN (1.8 mm x 2.6 mm) package options with extended temperature range of - 40 °C to + 125 °C. For more information, refer to Vishay Siliconix DG508B, DG509B evaluation board note. • • • • Operate with single or dual power supply V+ to V- analog signal swing range 44 V power supply maximum rating Extended operate temperature range: - 40 °C to + 125 °C Low leakage typically < 3 pA Low charge injection - QINJ = 2 pC Low power - ISUPPLY: 10 µA TTL compatible logic > 250 mA latch up current per JESD78 Available in SOIC16, TSSOP16, PDIP, and miniQFN16 packages Superior alternative to: - ADG508A, DG508A, HI-508 - ADG509A, DG509A, HI-509 Compliant to RoHS Directive 2002/95/EC Halogen-free according to IEC 61249-2-21 definition • • • • • • • • • BENEFITS • • • • • • Reduced switching errors Reduced glitching Improved data throughput Reduced power consumption Increased ruggedness Wide supply ranges (± 5 V to ± 20 V) APPLICATIONS • • • • Data acquisition systems Audio and video signal routing ATE systems Medical instrumentation FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION 16 A1 A0 1 16 A1 15 A2 EN 2 15 GND 3 14 GND V- 3 14 V+ S1 4 13 V+ S1a 4 13 S1b S2 5 12 S5 S2a 5 12 S2b S3 6 11 S6 S3a 6 11 S3b S4 7 10 S7 S4a 7 10 S4b D 8 9 S8 Da 8 9 Db A0 1 EN 2 V- Decoders/Drivers Top View Document Number: 64821 S10-2817-Rev. D, 20-Dec-10 DG509B Dual-In-Line SOIC and TSSOP DG508B Dual-In-Line SOIC and TSSOP Decoders/Drivers Top View www.vishay.com 1 DG508B, DG509B Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG508B miniQFN-16L GND 12 V+ 12 S6 9 S5 10 V+ 11 DG509B miniQFN-16L A2 13 A1 14 Decoders/ Drivers 6XX A0 15 EN 16 1 2 3 4 V- S1 S2 S3 8 S7 GND 13 7 S8 A1 14 6 D A0 15 5 S4 EN 16 Pin 1: LONG LEAD Top View Device Marking: 6XX Traceability Code: 6 is DG508BEN XX = Date/Lot S1B 11 S3B 9 S2B 10 8 S4B 7 DB Decoders/ Drivers 7XX 6 DA 5 S4A 1 2 3 4 V- S1A S2A S3A Pin 1: LONG LEAD Top View Device Marking: 7XX Traceability Code: 7 is DG509BEN XX = Date/Lot TRUTH TABLES AND ORDERING INFORMATION TRUTH TABLE (DG508B) TRUTH TABLE (DG509B) A2 A1 A0 EN On Switch A1 A0 EN On Switch X X X 0 None X X 0 None 0 0 0 1 1 0 0 1 1 0 0 1 1 2 0 1 1 2 0 1 0 1 3 1 0 1 3 0 1 1 1 4 1 1 1 4 1 0 0 1 5 1 0 1 1 6 1 1 0 1 7 1 1 1 1 8 ORDERING INFORMATION (DG508B) Temp. Range Package Part Number 16-Pin SOIC DG508BEY-T1-E3 16-Pin TSSOP DG508BEQ-T1-E3 - 40 °C to 125 °Ca Logic “0” = VIL 0.8 V Logic “1” = VIH 2.0 V X = Do not care ORDERING INFORMATION (DG509B) Temp. Range Package Part Number 16-Pin SOIC DG509BEY-T1-E3 16-Pin TSSOP DG509BEQ-T1-E3 - 40 °C to 125 °Ca 16-Pin PDIP DG508BEJ-E3 16-Pin PDIP DG509BEJ-E3 16-Pin MiniQFN DG508BEN-T1-GE4 16-Pin MiniQFN DG509BEN-T1-GE4 Notes: a. - 40 °C to 85 °C datasheet limits apply. www.vishay.com 2 Document Number: 64821 S10-2817-Rev. D, 20-Dec-10 DG508B, DG509B Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit V+ Voltages Referenced to V- Unit 44 GND 25 V (V-) - 2 to (V+) + 2 or 20 mA, whichever occurs first a Digital Inputs , VS, VD Current (Any terminal) 30 Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.) 100 Storage Temperature (EY, EQ, EJ, EN suffix) Power Dissipation (Packages)b - 65 to 150 16-Pin Narrow SOICc 600 16-Pin TSSOPd 450 16-Pin PDIPe °C mW 510 16-Pin miniQFN f 525 16-Pin Narrow SOICc 125 16-Pin TSSOPd Thermal Resistance (J-A)b mA 178 16-Pin PDIPe °C/W 159.6 16-Pin miniQFN f 152 Notes: a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads soldered or welded to PC board. c. Derate 8.0 mW/°C above 70 °C. d. Derate 5.6 mW/°C above 70 °C. e. Derate 6.3 mW/°C above 70 °C. f. Derate 6.6 mW/°C above 70 °C. SPECIFICATIONS Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V (± 10 %) VAX, VEN = 2.0 V, 0.8 Va - 40 °C to 125 °C Temp.b Typ.c Min.d - 40 °C to 85 °C Max.d Min.d 15 - 15 Max.d Unit 15 V Analog Switch Analog Signal Rangee Drain-Source On-Resistance RDS(on) Matching Source Off Leakage Current VANALOG Full RDS(on) VD = ± 10 V, IS = - 1 mA RDS(on) VD = ± 10 V ± Drain Off Leakage Current ID(off) DG508B DG509B VS = VD = 10 sequence each switch on ± Drain On Leakage Current ID(on) DG508B DG509B - 15 180 Full Room IS(off) VD = ± 10 V VS = 10 V VEN = 0 V Room 380 380 480 450 10 Room -1 1 -1 1 Full - 50 50 - 50 50 Room -1 1 -1 1 100 Full - 100 100 - 100 Room -1 1 -1 1 Full - 50 50 - 50 50 Room -1 1 -1 1 Full - 100 100 - 100 100 Room -1 1 -1 1 Full - 50 50 - 50 50 2.0 nA Digital Control Logic High Input Voltage VINH Full Logic Low Input Voltage VINL Full 2.0 0.8 0.8 Logic High Input Current IIH VAX, VEN = 2.0 V Full -1 1 -1 1 Logic Low Input Current IIL VAX, VEN = 0.8 V Full -1 1 -1 1 Logic Input Capacitancee Cin f = 1 MHz Room Document Number: 64821 S10-2817-Rev. D, 20-Dec-10 4 V µA pF www.vishay.com 3 DG508B, DG509B Vishay Siliconix SPECIFICATIONS Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V (± 10 %) VAX, VEN = 2.0 V, 0.8 Va - 40 °C to 125 °C Temp.b Typ.c 145 Min.d Max.d - 40 °C to 85 °C Min.d Max.d Unit Dynamic Characteristics tTRANS VS1 = + 10 V/- 10 V, VS8 = - 10 V/+ 10 V, RL = 1 M, CL = 35 pF Room Transition Time Break-Before-Make Interval tOPEN VS1 = VS8 = 5.0 V, CL = 35 pF, RL = 1 k Room Enable Turn-On Time Enable Turn-Off Time Charge Injectione tON(EN) tOFF(EN) QINJ Off Isolatione OIRR Crosstalke XTALK - 3 dB Bandwidthe Total Harmonic Distortione Source Off Capacitancee Drain Off Capacitancee Drain On Capacitancee Full Room VS1 = 5 V, VS2 to VS8 = 0 V, RL = 1 k, CL = 35 pF 37 Full 300 400 400 15 15 1 1 ns 100 250 340 340 90 240 240 300 300 Full Room 300 Full CL = 1 nF, RGEN = 0 , VGEN = 0 V Full 2 CL = 5 pF, RL = 50 f = 1 MHz Room - 81 Room - 88 250 pC dB BW RL = 50 Room 250 MHz THD RL = 10 k, 5 Vrms f = 20 Hz to 20 kHz Room 0.04 % CS(off) CD(off) f = 1 MHz CD(on) Room 3 DG508B Room 13 DG509B Room 8 DG508B Room 18 DG509B Room 11 Room 0.01 pF Power Supply Positive Supply Current I+ Negative Supply Current I- VAX, VEN = 0 V or V+ Full Full 0.5 0.5 0.6 0.6 - 200 - 200 mA µA SPECIFICATIONS (Single Supply 12 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V (± 10 %) VAX, VEN = 2.0 V, 0.8 Va - 40 °C to 125 °C Temp.b Typ.c - 40 °C to 85 °C Min.d Max.d Min.d Max.d Unit 0 12 0 12 V Analog Switch Analog Signal Rangee On-Resistance RDS(on) Matching VANALOG RDS(on) Full Room VD = 10 V/0 V, IS = 1 mA RDS(on) Room IS(off) Switch Off Leakage Current ID(off) ID(off) www.vishay.com 4 V+ = 12 V, V- = 0 V VD = 0 V/10 V, VS = 10 V/0 V DG508B DG509B 265 Full 500 500 650 600 10 Room -1 1 -1 1 Full - 50 - 50 - 50 50 Room -1 1 -1 1 Full - 100 100 - 100 100 Room -1 1 -1 1 Full - 50 50 - 50 50 nA Document Number: 64821 S10-2817-Rev. D, 20-Dec-10 DG508B, DG509B Vishay Siliconix SPECIFICATIONS (Single Supply 12 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V (± 10 %) VAX, VEN = 2.0 V, 0.8 Va - 40 °C to 125 °C Temp.b Typ.c Min.d Max.d - 40 °C to 85 °C Min.d Max.d Unit Analog Switch DG508B Channel On Leakage Current ID(on) V+ = 12 V, V- = 0 V VS = VD = 0 V/10 V DG509B Room -1 1 -1 1 Full - 100 100 - 100 100 Room -1 1 -1 1 Full - 50 50 - 50 50 2.0 nA Digital Control Logic High Input Voltage VINH Full 2.0 Logic Low Input Voltage VINL Full Logic High Input Current IIH VAX, VEN = 2.0 V Full -1 1 -1 1 Logic Low Input Current IIL VAX, VEN = 0.8 V Full -1 1 -1 1 Logic Input Capacitancee Cin f = 1 MHz Room 4 tTRANS VS1 = 10 V/0 V, VS8 = 0 V/10 V, RL = 1 M, CL = 35 pF Room 165 VS1 = VS8 = 5 V, CL = 35 pF, RL = 1 k Room 0.8 0.8 V µA pF Dynamic Characteristics Transition Time Break-Before-Make Interval Enable Turn-On Time Enable Turn-Off Time Charge Injectione Off Isolation e Crosstalke - 3 dB Bandwidthe Total Harmonic Distortione tOPEN tON(EN) tOFF(EN) Full 15 500 15 1 1 125 300 550 425 75 250 250 350 300 Full Room 400 550 37 Full Room VS1 = 5 V, VS2 to VS8 = 0 V, RL = 1 k, CL = 35 pF 400 Full 300 ns QINJ CL = 1 nF, RGEN = 0 , VGEN = 0 V Full 2.5 OIRR CL = 5 pF, RL = 50 f = 1 MHz Room - 80 Room - 88 BW RL = 50 Room 200 MHz THD RL = 10 k, 5 VRMS, f = 20 Hz to 20 kHz Room 0.26 % XTALK Source Off Capacitancee CS(off) Drain Off Capacitancee CD(off) Channel On Capacitancee CD(on) pC dB 2 DG508B f = 1 MHz DG509B 13 Room pF 8 DG508B 17 DG509B 12 Power Supply Power Supply Current I+ VAX, VEN = 0 V, or V+ Room Full 0.01 0.5 0.5 0.6 0.6 mA Notes: a. VAX, VEN = input voltage perform proper function. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. f. RDS(on) = RDS(on) max. - RDS(on) min. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 64821 S10-2817-Rev. D, 20-Dec-10 www.vishay.com 5 DG508B, DG509B Vishay Siliconix SCHEMATIC DIAGRAM (Typical Channel) V+ VREF GND D A0 Level Shift AX V- V+ Decode/ Drive S1 EN Sn V- Figure 1. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 400 400 T = 25 °C IS = 1 mA 375 V = + 10.8 V 325 300 V = + 12.0 V 375 250 V = + 20.0 V 225 200 V = + 36.0 V 175 RON - On-Resistance (Ω) RON - On-Resistance (Ω) 350 T = 25 °C IS = 1 mA 350 150 V = ± 5.0 V V = ± 10.8 V 300 V = ± 13.5 V V = ± 15 V V = ± 20 V 250 200 150 100 125 50 - 20 - 16 - 12 100 0 4 8 12 16 20 24 28 32 36 -4 0 4 8 12 16 20 VD - Analog Voltage (V) VD - Analog Voltage (V) On-Resistance vs. VD and Single Supply Voltage On-Resistance vs. VD and Dual Supply Voltage 500 550 + 125 °C + 85 °C + 25 °C - 40 °C 450 400 350 300 250 200 450 + 125 °C RON - On-Resistance (Ω) V = + 10.8 V IS = 1 mA 500 RON - On-Resistance (Ω) -8 400 350 + 85 °C 300 + 25 °C 250 200 - 40 °C V = + 12 V IS = 1 mA 150 150 100 100 0 www.vishay.com 6 1 2 3 4 5 6 7 8 9 10 11 12 0 1 2 3 4 5 6 7 8 9 10 11 12 V - Analog Voltage (V) V - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature On-Resistance vs. Analog Voltage and Temperature Document Number: 64821 S10-2817-Rev. D, 20-Dec-10 DG508B, DG509B Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 300 400 V = + 36 V IS = 1 mA V = + 20 V IS = 1 mA 350 RON - On-Resistance (Ω) RON - On-Resistance (Ω) 250 300 + 125 °C 250 + 85 °C 200 + 25 °C 150 - 40 °C 200 + 125 °C 150 + 85 °C + 25 °C 100 100 - 40 °C 50 50 0 2 4 6 8 10 12 14 16 18 0 20 4 8 12 24 28 32 36 On-Resistance vs. Analog Voltage and Temperature 650 400 V=±5V IS = 1 mA 600 350 500 RON - On-Resistance (Ω) 550 + 125 °C 450 400 350 + 85 °C 300 + 25 °C 250 200 V = ± 10.8 V IS = 1 mA 300 + 125 °C 250 200 + 85 °C 150 + 25 °C 100 - 40 °C - 40 °C 150 100 -5 -4 -3 -2 -1 0 1 2 3 4 50 - 11 - 9 5 -7 -5 V - Analog Voltage (V) -3 -1 1 3 5 7 9 11 V - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature On-Resistance vs. Analog Voltage and Temperature 350 350 V = ± 13.5 V IS = 1 mA 300 300 RON - On-Resistance (Ω) RON - On-Resistance (Ω) 20 V - Analog Voltage (V) V - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature RON - On-Resistance (Ω) 16 250 + 125 °C 200 + 85 °C 150 + 25 °C 100 V± = ± 15.0 V IS = 1 mA 250 + 125 °C 200 + 85 °C 150 + 25 °C 100 - 40 °C 50 - 14 - 10 -6 -2 - 40 °C 2 6 10 V - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature Document Number: 64821 S10-2817-Rev. D, 20-Dec-10 14 50 - 15 -9 -3 3 9 15 V - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature www.vishay.com 7 DG508B, DG509B Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 350 1.8 + 125 °C + 85 °C + 25 °C - 40 °C V = ± 20 V IS = 1 mA 1.7 1.6 VT - Switching Threshold (V) RON - On-Resistance () 300 250 200 150 100 1.5 VIH 1.4 1.3 VIL 1.2 1.1 1.0 0.9 50 - 20 - 16 - 12 -8 -4 0 4 8 12 16 0.8 20 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 V - Analog Voltage (V) Supply Voltage (V) On-Resistance vs. Analog Voltage and Temperature Switching Threshold vs. Supply Voltage 10 10 RL = 10 k VSignal = 5 VRMS 0 Loss, OIRR, XTALK (dB) - 10 1 THD (%) V = + 12 V 0.1 V = ± 15 V - 20 - 30 Loss V = ± 15 V RL = 50 - 40 OIRR - 50 - 60 - 70 0.01 XTalk - 80 - 90 0 10 100 1000 10 000 - 100 100K 100 000 1M 10M 100M 300M Frequency (Hz) Frequency (Hz) THD vs. Frequency Insertion Loss, Off-Isolation, Crosstalk vs. Frequency 100 mA 10 0 Loss - 20 10 mA V+ = 12 V RL = 50 - 30 - 40 OIRR - 50 - 60 XTalk - 70 I+ - Supply Current (A) Loss, OIRR, XTALK (dB) - 10 V = ± 15.0 V 1 mA 100 µA V = + 12.0 V 10 µA - 80 - 90 - 100 100K 1 µA 1M 10M 100M 200M Frequency (Hz) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency www.vishay.com 8 10 100 1K 10K 100K 1M 10M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency Document Number: 64821 S10-2817-Rev. D, 20-Dec-10 DG508B, DG509B Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 12 100 mA 10 10 mA QINJ - Charge Injection (pF) 1 mA V = ± 15.0 V I- - Supply Current (A) 8 100 µA 10 µA V = + 12.0 V 1 µA 6 4 2 0 -4 -6 100 nA -8 - 10 10 nA - 12 - 15 - 12 1 nA 10 100 1K 10K 100K 1M 10M Input Switching Frequency (Hz) -9 -6 -3 0 3 6 9 12 15 Charge Injection vs. Analog Voltage 105 8 V = ± 15.0 V 6 I D(ON) Leakage Current (pA) 104 Leakage Current (pA) V = ± 15 V CL = 1 nF VS - Analog Voltage (V) Supply Current vs. Input Switching Frequency 103 102 101 V = + 12 V CL = 1 nF -2 I D(OFF) V = ± 15 V T = 25 °C 4 ID(ON) 2 0 -2 IS(OFF) ID(OFF) -4 100 -6 I S(OFF) 10-1 - 60 - 40 - 20 0 20 40 60 80 Temperature (ºC) 100 120 140 Leakage Current vs. Temperature Document Number: 64821 S10-2817-Rev. D, 20-Dec-10 -8 - 15 - 10 -5 0 5 10 15 Analog Voltage (V) Leakage Current vs. Analog Voltage www.vishay.com 9 DG508B, DG509B Vishay Siliconix TEST CIRCUITS + 15 V V+ A2 S1 A1 50 A0 S8 DG508B EN ± 10 V VO D GND + 2.0 V ± 10 V S2 - S7 V- Logic Input 50 % 0V 35 pF 1 M tr < 20 ns tf < 20 ns 3V - 15 V VS1 90 % Switch Output + 15 V VO 0V V+ A1 ± 10 V S1b A0 50 DG509B S4b GND tTRANS tTRANS ± 10 V S1 ON S8 ON VO Db EN + 2.0 V 90 % VS8 S1a - S4a, Da V35 pF 1 M - 15 V Figure 2. Transition Time + 15 V V+ S1 5V EN S2 - S8 A0 DG508B A1 A2 GND VO D V- 50 Logic Input 50 % 0V 35 pF 1 k tr < 20 ns tf < 20 ns 3V tON(EN) - 15 V tOFF(EN) 0V + 15 V Switch Output VO V+ S1b 90 % 5V VO EN A0 A1 GND 10 % S1a - S4a, Da S2b - S4b DG509B Db V- 50 1 k VO 35 pF - 15 V Figure 3. Enable Switching Time www.vishay.com 10 Document Number: 64821 S10-2817-Rev. D, 20-Dec-10 DG508B, DG509B Vishay Siliconix TEST CIRCUITS + 15 V V+ EN + 2.4 V All S and Da tr < 20 ns tf < 20 ns 3V Logic Input 50 % +5V 0V A0 DG508B DG509B A1 A2 GND Db, D VO VO V- 80 % Switch Output 50 35 pF 1 k - 15 V VO tOPEN 0V Figure 4. Break-Before-Make Interval + 15 V Rg V+ SX Logic Input EN OFF ON OFF 0V A0 Channel Select 3V VO D A1 CL 1 nF A2 GND V- VO Switch Output VO is the measured voltage due to charge transfer error Q, when the channel turns off. - 15 V QINJ = CL x VO Figure 5. Charge Injection + 15 V + 15 V VIN Rg = 50 VIN V+ SX VS VS S8 A0 D A2 GND EN V- RL 50 SX S8 VO A1 V+ S1 A0 Rg = 50 D VO A1 A2 GND EN RL 50 V- - 15 V Off Isolation = 20 log - 15 V VOUT VIN Crosstalk = 20 log VOUT VIN Figure 6. Off Isolation Document Number: 64821 S10-2817-Rev. D, 20-Dec-10 Figure 7. Crosstalk www.vishay.com 11 DG508B, DG509B Vishay Siliconix TEST CIRCUITS + 15 V VS + 15 V V+ S1 V+ S1 Rg = 50 Meter A2 A0 D VO A1 A2 GND EN V- Channel Select D GND - 15 V S8 A1 A0 RL 50 Insertion Loss = 20 log HP4192A Impedance Analyzer or Equivalent VOUT EN f = 1 MHz V- 15 V VIN Figure 8. Insertion Loss Figure 9. Source Drain Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64821. www.vishay.com 12 Document Number: 64821 S10-2817-Rev. D, 20-Dec-10 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Package Information Vishay Siliconix PDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E E1 1 2 3 4 5 6 7 8 D S Q1 A A1 L 15° MAX C B1 e1 Dim A A1 B B1 C D E E1 e1 eA L Q1 S B eA MILLIMETERS Min Max INCHES Min Max 3.81 5.08 0.150 0.200 0.38 1.27 0.015 0.050 0.38 0.51 0.015 0.020 0.89 1.65 0.035 0.065 0.20 0.30 0.008 0.012 18.93 21.33 0.745 0.840 7.62 8.26 0.300 0.325 5.59 7.11 0.220 0.280 2.29 2.79 0.090 0.110 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 1.27 2.03 0.050 0.080 0.38 1.52 .015 0.060 ECN: S-03946—Rev. D, 09-Jul-01 DWG: 5482 Document Number: 71261 06-Jul-01 www.vishay.com 1 Package Information Vishay Siliconix MINI QFN-16L (1) (2) (3) (4) L1 (5) (16) L D (12) (11) (10) (9) (8) (7) (15) (6) (16) (5) (15) (6) (14) (7) (13) (8) E (13) (14) (12) (11) (10) (9) (2) (1) (3) (4) e DIM C b A A1 BACK SIDE VIEW MILLIMETERS MIN. NAM INCHES MAX. MIN. NAM MAX. A 0.70 0.75 0.80 0.0275 0.0295 0.0315 A1 0 - 0.05 0 - 0.002 b 0.15 0.20 0.25 0.0059 0.0078 0.0098 C 0.15 0.20 0.25 0.0059 0.0078 0.0098 D 2.60 BSC 0.1023 BSC E 1.80 BSC 0.0708 BSC e 0.40 BSC 0.0157 BSC L 0.35 0.40 0.45 0.0137 0.0157 0.0177 L1 0.45 0.50 0.55 0.0177 0.0196 0.0216 ECN T-06380-Rev. A, 14-Aug-06 DWG: 5954 Document Number: 74323 14-Aug-06 www.vishay.com 1 Package Information Vishay Siliconix TSSOP: 16-LEAD DIMENSIONS IN MILLIMETERS Symbols Min Nom Max A - 1.10 1.20 A1 0.05 0.10 0.15 A2 - 1.00 1.05 0.38 B 0.22 0.28 C - 0.127 - D 4.90 5.00 5.10 E 6.10 6.40 6.70 E1 4.30 4.40 4.50 e - 0.65 - L 0.50 0.60 0.70 L1 0.90 1.00 1.10 y - - 0.10 θ1 0° 3° 6° ECN: S-61920-Rev. D, 23-Oct-06 DWG: 5624 Document Number: 74417 23-Oct-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.152 0.022 0.050 0.028 (0.559) (1.270) (0.711) (3.861) 0.246 (6.248) 0.047 (1.194) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 24 Document Number: 72608 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1