DIODES ZPD82

ZPD1 - ZPD51
SILICON PLANAR ZENER DIODE
Features
·
·
·
Planar Die Construction
Hermetically Sealed Glass Case
0.7V - 51V Nominal Zener Voltages
B
A
·
·
·
C
D
Mechanical Data
·
·
A
Case: Glass, DO-35
Leads: Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Marking: Type Number
Weight: 0.13 grams (approx.)
DO-35
Dim
Min
Max
A
25.4
—
B
—
4.57
C
—
0.53
D
—
1.9
All Dimensions in mm
Maximum Ratings
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
Zener Current (see Table on Page 2)
Characteristic
—
—
—
Power Dissipation (Note 2)
Pd
500
mW
RqJA
300
K/W
Tj, TSTG
-55 to +175
°C
Thermal Resistance, Junction to Ambient Air (Note 2)
Operating and Storage Temperature Range
Notes:
1. Tested with pulses, tp = 20ms.
2. Valid provided that leads at a distance of 8mm from body are kept at ambient temperature.
DS21402 Rev. E-3
1 of 3
ZPD1-ZPD51
Electrical Characteristics (continued)
Type
Number
Zener
Voltage
Range (Note 1)
@ TA = 25°C unless otherwise specified
Maximum Zener Impedance
Typical
Temperature
Cooefficient
Min. Reverse
Voltage
@ IR = 0.1µA
@ IZT = 5mA
ZZT @ IZT =
5mA
ZZK @ IZK =
1.0mA
TC
VR
Max. Zener Current (Note 2)
@ TA = 25°C
IZM
|
@ TA = 45°C
IZM
Volts
Ohms
Ohms
%VZ/°C
Volts
mA
mA
ZPD1(Note 3)
0.7-0.8
8
50
-0.255
—
340
280
ZPD2.7
2.5-2.9
83
500
-0.065
—
160
135
ZPD3.0
2.8-3.2
95
500
-0.060
—
140
117
ZPD3.3
3.1-3.5
95
500
-0.055
—
130
109
ZPD3.6
3.4-3.8
95
500
-0.055
—
120
101
ZPD3.9
3.7-4.1
95
500
-0.050
—
110
92
ZPD4.3
4.0-4.6
95
500
-0.035
—
100
85
ZPD4.7
4.4-5.0
78
500
-0.015
—
90
76
ZPD5.1
4.8-5.4
60
480
+0.005
0.8
80
67
ZPD5.6
5.2-6.0
40
400
+0.020
1.0
70
59
ZPD6.2
5.8-6.6
10
200
+0.030
2.0
64
54
ZPD6.8
6.4-7.2
8
150
+0.045
3.0
58
49
ZPD7.5
7.0-7.9
7
50
+0.050
5.0
53
44
ZPD8.2
7.7-8.7
7
50
+0.055
6.0
47
40
ZPD9.1
8.5-9.6
10
50
+0.065
7.0
43
36
ZPD10
9.4-10.6
15
70
+0.065
7.5
40
33
ZPD11
10.4-11.6
20
70
+0.070
8.5
36
30
ZPD12
11.4-12.7
20
90
+0.075
9.0
32
28
ZPD13
12.4-14.1
25
110
+0.080
10
29
25
ZPD15(Note 4)
13.8-15.6
30
110
+0.080
11
27
23
ZPD16
15.3-17.1
40
170
+0.090
12
24
20
ZPD18
16.8-19.1
50
170
+0.090
14
21
18
ZPD20
18.8-21.2
50
220
+0.090
15
20
17
ZPD22
20.8-23.3
55
220
+0.090
17
18
16
ZPD24
22.8-25.6
80
220
+0.090
18
16
13
ZPD27
25.1-28.9
80
250
+0.090
20
14
12
ZPD30
28-32
80
250
+0.090
22.5
13
10
ZPD33
31-35
80
250
+0.090
25
12
9
ZPD36
34-38
90
250
+0.090
27
11
9
ZPD39
37-41
90
300
+0.110
29
10
8
ZPD43
40-46
100
700
+0.110
32
9.2
7
ZPD47
44-50
100
750
+0.110
35
8.5
6
ZPD51
48-54
100
750
+0.110
38
7.8
6
Notes:
1. Tested with pulses tp = 20 ms.
2. Valid provided that leads at a distance of 8mm from body are kept at ambient temperature.
3. The ZPD1 is a silicon diode with operation in forward direction. Hence, the index of all parameters should
be “F” instead of “Z”. Connect the cathode electrode to the negative pole.
4. 15 volts ± 2% available upon special request as part number ZPD15C.
DS21402 Rev. E-3
2 of 3
ZPD1-ZPD51
IZT, ZENER CURRENT (mA)
40
ZPD4,7
ZPD6,8
ZPD8,2
30
20
10
ZPD10
ZPD15
20
ZPD18
ZPD22
ZPD27
ZPD33
10
Test Current IZ
5mA
Test Current IZ
5mA
0
0
0
1
2
3
4
5
6
7
8
9
10
0
10
ZPD39
ZPD51
Tj = 25°C
ZPD47
See Note 1
8
6
Test Current IZ
5mA
4
2
0
10
20
30
40
50
60
70
80
90 100
40
See Note 2
300
200
100
0
100
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 4, Power Derating Curve
VZ, ZENER VOLTAGE (V)
Fig. 3, Zener Breakdown Characteristics
DS21402 Rev. E-3
30
400
0
0
20
500
Pd, POWER DISSIPATION (mW)
IZT ZENER CURRENT (mA)
ZPD43
ZPD36
VZ, ZENER VOLTAGE (V)
Fig. 2, Zener Breakdown Characteristics
VZ, ZENER VOLTAGE (V)
Fig. 1, Zener Breakdown Characteristics
10
Tj = 25°C
See Note 1
ZPD12
See Note 1
ZPD5,6
ZPD3,3
30
Tj = 25°C
ZPD2,7 ZPD3,9
IZT, ZENER CURRENT (mA)
50
3 of 3
ZPD1-ZPD51