NPN − MPS650, MPS651; PNP − MPS750, MPS751 MPS651 and MPS751 are Preferred Devices Amplifier Transistors Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MPS650; MPS750 MPS651; MPS751 VCE Collector −Base Voltage MPS650; MPS750 MPS651; MPS751 VCB Emitter −Base Voltage VEB 5.0 Vdc Collector Current − Continuous IC 2.0 Adc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Power Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range Value Unit Vdc 40 60 Vdc 2 BASE COLLECTOR 3 NPN 1 EMITTER 2 BASE 60 80 PNP 1 EMITTER TO−92 CASE 29 STYLE 1 1 12 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient VCE 200 °C/W Thermal Resistance, Junction−to−Case VCB 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM MPS xxx AYWW G G xxx = 650, 750, 651, or 751 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 April, 2007 − Rev. 3 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MPS650/D NPN − MPS650, MPS651; PNP − MPS750, MPS751 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max 40 60 − − 60 80 − − 5.0 − − − 0.1 0.1 − 0.1 75 75 75 40 − − − − − − 0.5 0.3 Unit OFF CHARACTERISTICS V(BR)CEO Collector −Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) MPS650, MPS750 MPS651, MPS751 Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0 ) Vdc V(BR)CBO MPS650, MPS750 MPS651, MPS751 Emitter −Base Breakdown Voltage (IC = 0, IE = 10 mAdc) V(BR)EBO Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Vdc Vdc mAdc ICBO MPS650, MPS750 MPS651, MPS751 Emitter Cutoff Current (VEB = 4.0 V, IC = 0) IEBO mAdc ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 50 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) − Collector −Emitter Saturation Voltage (IC = 2.0 A, IB = 200 mA) (IC = 1.0 A, IB = 100 mA) VCE(sat) Vdc Base−Emitter On Voltage (IC = 1.0 A, VCE = 2.0 V) VBE(on) − 1.0 Vdc Base −Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) VBE(sat) − 1.2 Vdc fT 75 − MHz SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 2) (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. NPN PNP 300 250 240 225 VCE = 2.0 V TJ = 125°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 270 210 180 150 120 90 25°C −55 °C 60 30 0 10 TJ = 125°C VCE = −2.0 V 200 175 150 25°C 125 100 75 −55 °C 50 25 20 50 0 −10 −20 100 200 500 1.0 A 2.0 A 4.0 A IC, COLLECTOR CURRENT (mA) Figure 1. MPS650, MPS651 Typical DC Current Gain −50 −100 −200 −500 −1.0 A −2.0 A −4.0 A IC, COLLECTOR CURRENT (mA) Figure 2. MPS750, MPS751 Typical DC Current Gain http://onsemi.com 2 NPN − MPS650, MPS651; PNP − MPS750, MPS751 NPN 1.8 −1.8 1.6 −1.6 1.4 −1.4 1.2 1.0 VBE(sat) @ IC/IB = 10 0.8 VBE(on) @ VCE = 2.0 V 0.6 0.4 −1.2 VBE(sat) @ IC/IB = 10 −1.0 −0.8 VBE(on) @ VCE = 2.0 V −0.6 −0.4 VCE(sat) @ IC/IB = 10 0.2 0 PNP −2.0 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.0 50 100 200 500 1.0 A IC, COLLECTOR CURRENT (mA) VCE(sat) @ IC/IB = 10 −0.2 2.0 A 0 4.0 A −50 NPN 1.0 −0.7 0.6 −0.6 0.5 −0.5 IC = 10 mA IC = 100 mA IC = 500 mA −0.4 IC = 2.0 A −0.2 0.1 −0.1 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) 50 100 200 500 NPN IC, COLLECTOR CURRENT −50 −100 −200 −500 PNP −10 1.0 ms 1.0 0.5 0.01 1.0 IC = −100 mA −4.0 2.0 0.02 IC = −2.0 A Figure 6. MPS750, MPS751 Collector Saturation Region 4.0 0.05 IC = −10 mA 0 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 IB, BASE CURRENT (mA) Figure 5. MPS650, MPS651 Collector Saturation Region 10 IC = −500 mA −0.3 0.2 0.1 TJ = 25°C −0.8 TJ = 25°C 0.7 0.2 −4.0 A −0.9 0.8 0.3 −2.0 A PNP −1.0 0.9 0.4 −200 −500 −1.0 A IC, COLLECTOR CURRENT (mA) Figure 4. MPS750, MPS751 On Voltages VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 3. MPS650, MPS651 On Voltages −100 TA = 25°C 100 ms −2.0 1.0 ms −1.0 MPS65 0 MPS65 1 −0.5 −0.2 TC = 25°C −0.1 −0.05 WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 5.0 10 20 50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) −0.02 −0.01 −1.0 100 Figure 7. MPS650, MPS651 SOA, Safe Operating Area TA = 25°C MPS75 0 MPS75 1 100 ms TC = 25°C WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −2.0 −5.0 −10 −20 −50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 8. MPS750, MPS751 SOA, Safe Operating Area http://onsemi.com 3 −100 NPN − MPS650, MPS651; PNP − MPS750, MPS751 ORDERING INFORMATION Package Shipping† TO−92 5000 Units / Bulk MPS650G TO−92 (Pb−Free) 5000 Units / Bulk MPS650RLRAG TO−92 (Pb−Free) 2000 / Tape & Reel MPS650ZL1G TO−92 (Pb−Free) 2000 / Tape & Ammunition TO−92 5000 Units / Bulk MPS651G TO−92 (Pb−Free) 5000 Units / Bulk MPS651RLRAG TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 2000 / Tape & Ammunition MPS651RLRMG TO−92 (Pb−Free) 2000 / Tape & Ammunition MPS750G TO−92 (Pb−Free) 5000 Units / Bulk MPS750RLRAG TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 2000 / Tape & Ammunition TO−92 (Pb−Free) 2000 / Tape & Ammunition TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 2000 / Tape & Ammunition MPS751RLRPG TO−92 (Pb−Free) 2000 / Tape & Ammunition MPS751ZL1G TO−92 (Pb−Free) 2000 / Tape & Ammunition Device MPS650 MPS651 MPS651RLRM MPS750RLRP MPS750RLRPG MPS751 MPS751G MPS751RLRA MPS751RLRAG MPS751RLRP †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NPN − MPS650, MPS651; PNP − MPS750, MPS751 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N A R BENT LEAD TAPE & REEL AMMO PACK B P NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. T SEATING PLANE K D X X G J V 1 C SECTION X−X DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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