MPSA62, MPSA63, MPSA64 MPSA64 is a Preferred Device Darlington Transistors PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Unit VCES MPSA62 MPSA63/64 Collector −Base Voltage Value Vdc −20 −30 EMITTER 1 VCBO MPSA62 MPSA63/64 Emitter −Base Voltage Vdc −20 −30 VEBO −10 Vdc Collector Current − Continuous IC −500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM 1 2 3 TO−92 (TO−226AA) CASE 29−11 STYLE 1 MPS A6x AYWWG G x = 2, 3, or 4 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 June, 2005 − Rev. 2 1 Publication Order Number: MPSA62/D MPSA62, MPSA63, MPSA64 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −20 −30 − − − − −100 −100 − −100 5,000 10,000 20,000 10,000 20,000 − − − − − − − −1.0 −1.5 − − −1.4 −2.0 125 − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −100 mAdc, VBE = 0) V(BR)CES MPSA62 MPSA63, MPSA64 Collector Cutoff Current (VCB= −15 Vdc, IE = 0) (VCB = −30 Vdc, IE = 0) Vdc ICBO MPSA62 MPSA63, MPSA64 Emitter Cutoff Current (VEB = −10 Vdc, IC = 0) IEBO nAdc nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = −10 mAdc, VCE = −5.0 Vdc) hFE MPSA63 MPSA64 MPSA62 MPSA63 MPSA64 (IC = −100 mAdc, VCE = −5.0 Vdc) Collector −Emitter Saturation Voltage (IC = −10 mAdc, IB = −0.01 mAdc) (IC = −100 mAdc, IB = −0.1 mAdc) MPSA62 MPSA63, MPSA64 Base −Emitter On Voltage (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −100 mAdc, VCE = −5.0 Vdc) MPSA62 MPSA63, MPSA64 − VCE(sat) Vdc VBE(on) Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (Note 2) (IC = −100 mAdc, VCE = −5.0 Vdc, f = 100 MHz) fT MHz MPSA63, MPSA64 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. 2. fT = |hfe| S ftest. ORDERING INFORMATION Package Shipping † MPSA62 TO−92 5000 Units / Bulk MPSA63 TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 2000 / Ammo Pack TO−92 (Pb−Free) 2000 / Ammo Pack TO−92 2000 / Ammo Pack TO−92 (Pb−Free) 2000 / Ammo Pack TO−92 2000 / Ammo Pack TO−92 (Pb−Free) 2000 / Ammo Pack TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 2000 / Ammo Pack TO−92 (Pb−Free) 2000 / Ammo Pack Device MPSA63G MPSA63RLRA MPSA63RLRAG MPSA63RLRM MPSA63RLRMG MPSA63RLRP MPSA63RLRPG MPSA63ZL1 MPSA63ZL1G MPSA64 MPSA64G MPSA64RLRA MPSA64RLRAG MPSA64RLRM MPSA64RLRMG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MPSA62, MPSA63, MPSA64 hFE , DC CURRENT GAIN (X1.0 K) 200 TA = 125°C 100 70 50 30 −10 V 25°C VCE = −2.0 V −5.0 V 20 10 7.0 5.0 −55°C 3.0 2.0 −0.3 −0.5 −0.7 −1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 −200 −300 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS −2.0 TA = 25°C VBE(sat) @ IC/IB = 100 V, VOLTAGE (VOLTS) −1.6 −1.2 VBE(on) @ VCE = −5.0 V −0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 −0.4 0 −0.3 −0.5 −1.0 −2 −3 −5 −10 −20 −30 −50 IC, COLLECTOR CURRENT (mA) −100 −200 −300 −2.0 TA = 25°C −1.8 −1.6 −1.4 IC = −10 mA −50 mA −100 mA −175 mA −1.2 −1.0 −0.8 −0.6 −0.1−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100−200−500 −1K−2K −5K−10K IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region −1000 10 VCE = −5.0 V f = 100 MHz TA = 25°C IC, COLLECTOR CURRENT (mA) |h FE |, HIGH FREQUENCY CURRENT GAIN Figure 2. “On” Voltage 4.0 3.0 2.0 −300 mA −300 −200 TA = 25°C 0.4 0.2 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) −500 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (DUTY CYCLE ≤ 10%) MPSA62 −50 −20 MPSA63 −10 −1.0 −1K 1.0 s TC = 25°C −100 1.0 0.1 −1.0 −2.0 100 ms 1.0 ms −2.0 −4.0 −6.0 −10 −20 −40 −60 VCE, COLLECTOR VOLTAGE (VOLTS) Figure 4. High Frequency Current Gain Figure 5. Active Region, Safe Operating Area http://onsemi.com 3 MPSA62, MPSA63, MPSA64 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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