ONSEMI MAC15MG

MAC15M, MAC15N
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave AC control applications
where high noise immunity and high commutating di/dt are required.
http://onsemi.com
Features
•
•
•
•
•
•
•
•
•
TRIACS
15 AMPERES RMS
600 thru 800 VOLTS
Blocking Voltage to 800 Volts
On-State Current Rating of 15 Amperes RMS at 80°C
Uniform Gate Trigger Currents in Three Modes
High Immunity to dv/dt − 250 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating di/dt − 9.0 A/ms minimum at 125°C
Operational in Three Quadrants, Q1, Q2, and Q3
Pb−Free Packages are Available*
MT2
MT1
G
MARKING
DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(−40 to 125°C, Sine Wave, 50 to 60 Hz,
Gate Open)
MAC15M
MAC15N
VDRM,
VRRM
On−State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 80°C)
IT(RMS)
15
A
ITSM
150
A
I2t
93
A2s
PGM
20
W
PG(AV)
0.5
W
TJ
−40 to +125
Peak Non-repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power
(Pulse Width ≤ 1.0 ms, TC = 80°C)
Average Gate Power
(t = 8.3 ms, TC = 80°C)
Operating Junction Temperature Range
Storage Temperature Range
Value
Unit
600
800
Tstg
1
−40 to +150
1
TO−220AB
CASE 221A−09
STYLE 4
3
x
A
Y
WW
G
= M or N
= Assembly Location
= Year
= Work Week
= Pb−Free Package
PIN ASSIGNMENT
Main Terminal 1
°C
2
Main Terminal 2
°C
3
Gate
4
Main Terminal 2
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
December, 2005 − Rev. 2
2
1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 2005
MAC15xG
AYWW
V
ORDERING INFORMATION
Device
Package
Shipping
MAC15M
TO−220AB
50 Units / Rail
MAC15MG
TO−220AB
(Pb−Free)
50 Units / Rail
MAC15N
TO−220AB
50 Units / Rail
MAC15NG
TO−220AB
(Pb−Free)
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MAC15M/D
MAC15M, MAC15N
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal ResistanceJunction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
Value
Unit
RqJC
RqJA
2.0
62.5
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
0.01
2.0
−
1.2
1.6
5.0
5.0
5.0
13
16
18
35
35
35
−
20
40
−
−
−
33
36
33
50
80
50
0.5
0.5
0.5
0.75
0.72
0.82
1.5
1.5
1.5
(di/dt)c
9.0
−
−
A/ms
dv/dt
250
−
−
V/ms
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(ITM = ± 21 A Peak)
VTM
Gate Trigger Current (Continuous DC) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IGT
Hold Current
(VD = 12 Vdc, Gate Open, Initiating Current = ±150 mA)
IH
Latching Current (VD = 24 V, IG = 35 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IL
Gate Trigger Voltage (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
V
mA
mA
mA
VGT
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current; See Figure 10.
(VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/ms,
Gate Open, TJ = 125°C, f = 250 Hz, No Snubber)
CL = 10 mF
LL = 40 mH
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
http://onsemi.com
2
MAC15M, MAC15N
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VTM
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
on state
IH
IRRM at VRRM
off state
IH
Quadrant 3
MainTerminal 2 −
VTM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
(−) IGT
GATE
Quadrant I
(+) IGT
GATE
MT1
MT1
REF
REF
IGT −
+ IGT
(−) MT2
Quadrant III
Quadrant 1
MainTerminal 2 +
(−) MT2
Quadrant IV
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
http://onsemi.com
3
+ Voltage
IDRM at VDRM
MAC15M, MAC15N
120
18
PAV, AVERAGE POWER (WATTS)
20
TC, CASE TEMPERATURE (°C)
125
α = 30 and 60°
110
120°
α = 180°
100
95
90°
14
α = 90°
105
60°
12
α = 120°
10
DC
90
α = 30°
8
6
4
85
2
0
2
4
6
8
10
12
IT(RMS), RMS ON-STATE CURRENT (AMP)
14
0
16
0
2
100
TYPICAL AT
TJ = 25°C
4
6
8
10
12
IT(RMS), ON-STATE CURRENT (AMP)
14
16
Figure 2. On−State Power Dissipation
r(t), TRANSIENT THERMAL RESISTANCE(NORMALIZED)
Figure 1. RMS Current Derating
I T, INSTANTANEOUS ON-STATE CURRENT (AMP)
180°
16
115
80
DC
MAXIMUM @ TJ = 125°C
10
1
0.1
0.01
0.1
1
10
100
t, TIME (ms)
1000
1·10 4
Figure 4. Transient Thermal Response
MAXIMUM @ TJ = 25°C
40
I H, HOLD CURRENT (mA)
1
0.1
0
0.5
1
1.5
2
2.5
3
3.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
MT2 POSITIVE
MT2 NEGATIVE
5
−40
4
Figure 3. On−State Characteristics
−10
20
50
80
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Hold Current Variation
http://onsemi.com
4
110 125
MAC15M, MAC15N
Q2
VGT, GATE TRIGGER VOLTAGE (VOLT)
1
IGT, GATE TRIGGER CURRENT (mA)
100
Q3
Q1
OFF-STATE VOLTAGE = 12 V
RL = 140 W
1
−40
−10
20
50
80
TJ, JUNCTION TEMPERATURE (°C)
110
125
OFF-STATE VOLTAGE = 12 V
RL = 140 W
Q1
Q3
Q2
0.5
−40
(dv/dt) c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE(V/μ s)
5000
110
125
100
VD = 800 Vpk
TJ = 125°C
4K
3K
2K
1K
0
+20
50
80
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Gate Trigger Voltage versus Junction
Temperature
10
100
1000
10000
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
Figure 8. Critical Rate of Rise of Off−State Voltage
(Exponential)
TJ = 125°C
10
CHARGE
100°C
75°C
ITM
tw
VDRM
1
10
f=
1
2 tw
(di/dt)c =
6f ITM
1000
20
30
40
50
60
70
80
90 100
(di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 9. Critical Rate of Rise of
Commutating Voltage
LL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
1N4007
MEASURE
I
TRIGGER
CHARGE
CONTROL
NON-POLAR
CL
TRIGGER CONTROL
dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE(V/μ s)
Figure 6. Typical Holding Current versus Junction
Temperature
−10
−
+
200 V
MT2
1N914 51 W
G
MT1
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
http://onsemi.com
5
MAC15M, MAC15N
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−− 0.080
STYLE 4:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
Literature Distribution Center for ON Semiconductor
USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: [email protected]
http://onsemi.com
6
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MAC15M/D