MM3Z2V4ST1 SERIES Zener Voltage Regulators 200 mW SOD−323 Surface Mount Tight Tolerance Portfolio This series of Zener diodes is packaged in a SOD−323 surface mount package that has a power dissipation of 200 mW. They are designed to provide voltage regulation protection and are especially attractive in situations where space is at a premium. They are well suited for applications such as cellular phones, hand−held portables, and high density PC boards. http://onsemi.com 1 Cathode 2 Anode MARKING DIAGRAM Specification Features: • Standard Zener Breakdown Voltage Range − • • • • • • • 2 2.4 V to 18 V Steady State Power Rating of 200 mW Small Body Outline Dimensions: 0.067″ x 0.049″ (1.7 mm x 1.25 mm) Low Body Height: 0.035″ (0.9 mm) Package Weight: 4.507 mg/unit ESD Rating of Class 3 (>16 kV) per Human Body Model Tight Tolerance VZ Pb−Free Packages are Available 1 xx M SOD−323 CASE 477 STYLE 1 xx = Specific Device Code M = Date Code ORDERING INFORMATION Mechanical Characteristics: CASE: Void-free, transfer-molded plastic FINISH: All external surfaces are corrosion resistant MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds LEADS: Plated with Pb−Sn or Sn only (Pb−Free) POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 MOUNTING POSITION: Any Device Package Shipping† MM3ZxxxST1 SOD−323 3000/Tape & Reel MM3ZxxxST3 SOD−323 10,000/Tape & Reel MM3ZxxxST1G SOD−323 (Pb−Free) 3000/Tape & Reel MM3ZxxxST3G SOD−323 (Pb−Free) 10,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION MAXIMUM RATINGS Rating Total Device Dissipation FR−5 Board, (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance from Junction−to−Ambient Junction and Storage Temperature Range Symbol Max Unit 200 1.5 mW mW/°C RJA 635 °C/W TJ, Tstg −65 to +150 °C See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. PD Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 Minimum Pad. Semiconductor Components Industries, LLC, 2004 November, 2004 − Rev. 10 1 Publication Order Number: MM3Z2V4ST1/D MM3Z2V4ST1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types) Parameter Symbol VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ C I IF VZ VR V IR VF IZT Maximum Temperature Coefficient of VZ Zener Voltage Regulator Max. Capacitance @VR = 0 and f = 1 MHz ELECTRICAL CHARACTERISTICS (VF = 0.9 Max @ IF = 10 mA for all types) ZZT IZ = IZT @ 10% Mod Max A V Min Max C pF Max @ VR = 0 f = 1 MHz Max IR @ VR dVZ/dt (mV/k) @ IZT1 = 5 mA Min Max ZZK IZ = 0.5 mA Max 5.0 2.43 2.63 1000 100 120 1.0 −3.5 0 450 T3 5.0 2.67 2.91 1000 100 100 1.0 −3.5 0 450 MM3Z3V3ST1 T5 5.0 3.32 3.53 1000 95 5.0 1.0 −3.5 0 450 MM3Z3V3TT1, G TX 5.0 3.19 3.41 100 95 5.0 1.0 −3.5 0 450 MM3Z3V6ST1, G T6 5.0 3.60 3.85 1000 90 5.0 1.0 −3.5 0 450 MM3Z3V9ST1, G T7 5.0 3.89 4.16 1000 90 3.0 1.0 −3.5 −2.5 450 MM3Z4V3ST1 T8 5.0 4.17 4.43 1000 90 3.0 1.0 −3.5 0 450 MM3Z4V7ST1, G T9 5.0 4.55 4.75 800 80 3.0 2.0 −3.5 0.2 260 MM3Z5V1ST1 TA 5.0 4.98 5.2 500 60 2.0 2.0 −2.7 1.2 225 MM3Z5V6ST1 TC 5.0 5.49 5.73 200 40 1.0 2.0 −2.0 2.5 200 MM3Z6V2ST1 TE 5.0 6.06 6.33 100 10 3.0 4.0 0.4 3.7 185 MM3Z6V8ST1 TF 5.0 6.65 6.93 160 15 2.0 4.0 1.2 4.5 155 MM3Z7V5ST1 TG 5.0 7.28 7.6 160 15 1.0 5.0 2.5 5.3 140 MM3Z8V2ST1 TH 5.0 8.02 8.36 160 15 0.7 5.0 3.2 6.2 1358 MM3Z9V1ST1 TK 5.0 8.85 9.23 160 15 0.5 6.0 3.8 7.0 130 MM3Z10VST1 WB 5.0 9.80 10.20 160 15 0.5 6.0 4.5 8.0 130 MM3Z11VST1 WC 5.0 10.78 11.22 160 15 0.5 7.0 5.4 9.0 130 MM3Z12VST1 TN 5.0 11.74 12.24 80 25 0.1 8.0 6.0 10 130 MM3Z15VST1* WF 5.0 14.7 15.3 80 30 0.05 10.5 9.2 13 110 MM3Z16VST1 TU 5.0 15.85 16.51 80 40 0.05 11.2 10.4 14 105 MM3Z18VST1 TW 5.0 17.56 18.35 80 45 0.05 12.6 12.4 16 100 Device Marking Test Current Izt mA MM3Z2V4ST1 T2 MM3Z2V7ST1 Device Zener Voltage VZ *Product preview − parts available upon request. http://onsemi.com 2 MM3Z2V4ST1 SERIES Typical Characteristics 1000 TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT , DYNAMIC IMPEDANCE ( Ω) 1000 100 100 IZ = 1 mA 10 5 mA 150°C 10 75°C 3.0 10 0.4 0.5 0°C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE Figure 1. Effect of Zener Voltage on Zener Impedance 1.1 1.2 Figure 2. Typical Forward Voltage 1000 TA = 25°C 0 V BIAS 1 V BIAS 100 BIAS AT 50% OF VZ NOM 10 IR, LEAKAGE CURRENT ( µ A) 1000 C, CAPACITANCE (pF) 25°C 1.0 1.0 100 10 1.0 +150°C 0.1 0.01 + 25°C 0.001 −55°C 0.0001 0.00001 1.0 4.0 10 VZ, NOMINAL ZENER VOLTAGE (V) 0 5.0 VZ, NOMINAL ZENER VOLTAGE (V) Figure 3. Typical Capacitance Figure 4. Typical Leakage Current 100 10 100 80 10 POWER DISSIPATION (%) I Z , ZENER CURRENT (mA) TA = 25°C 1.0 0.1 0.01 0 2.0 4.0 6.0 VZ, ZENER VOLTAGE (V) 8.0 10 60 40 20 0 0 25 50 75 100 TEMPERATURE (°C) 125 Figure 6. Steady State Power Derating Figure 5. Zener Voltage versus Zener Current (VZ Up to 9 V) http://onsemi.com 3 150 MM3Z2V4ST1 SERIES PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. K A D 1 2 B DIM A B C D E H J K L E C J NOTE 3 L MILLIMETERS MIN MAX 1.60 1.80 1.15 1.35 0.80 1.00 0.25 0.40 0.15 REF 0.00 0.10 0.089 0.177 2.30 2.70 0.075 −−− INCHES MIN MAX 0.063 0.071 0.045 0.053 0.031 0.039 0.010 0.016 0.006 REF 0.000 0.004 0.0035 0.0070 0.091 0.106 0.003 −−− H NOTE 5 STYLE 1: PIN 1. CATHODE 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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