ONSEMI MJE5731G

MJE5730, MJE5731,
MJE5731A
High Voltage PNP Silicon
Plastic Power Transistors
These devices are designed for line operated audio output amplifier,
SWITCHMODEt power supply drivers and other switching
applications.
1.0 AMPERE
POWER TRANSISTORS
PCP SILICON
300−350−400 VOLTS
50 WATTS
Features
•
•
•
•
•
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300 V to 400 V (Min) − VCEO(sus)
1.0 A Rated Collector Current
Popular TO−220 Plastic Package
PNP Complements to the TIP47 thru TIP50 Series
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
MJE5730
MJE5731
MJE5731A
VCEO
300
350
375
Vdc
Collector−Base Voltage
MJE5730
MJE5731
MJE5731A
VCB
300
350
375
Vdc
1
Emitter−Base Voltage
VEB
5.0
Vdc
Collector Current
IC
ICM
1.0
3.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25°C
PD
40
0.32
W
W/_C
Total Device Dissipation @ TC = 25_C
Derate above 25°C
PD
2.0
0.016
W
W/_C
Unclamped Inducting Load Energy
(See Figure 10)
E
20
mJ
TJ, Tstg
−65 to +150
_C
− Continuous
− Peak
Operating and Storage Junction
Temperature Range
2
TO−220AB
CASE 221A−09
STYLE 1
3
MARKING DIAGRAM
MJE573xG
AY WW
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristics
RqJC
3.125
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 5
1
MJE573x
G
A
Y
WW
= Device Code
x = 0, 1, or 1A
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Publication Order Number:
MJE5730/D
MJE5730, MJE5731, MJE5731A
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0)
MJE5730
MJE5731
MJE5731A
VCEO(sus)
300
350
375
−
−
−
Vdc
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
(VCE = 250 Vdc, IB = 0)
(VCE = 300 Vdc, IB = 0)
MJE5730
MJE5731
MJE5731A
ICEO
−
−
−
1.0
1.0
1.0
mAdc
Collector Cutoff Current
(VCE = 300 Vdc, VBE = 0)
(VCE = 350 Vdc, VBE = 0)
(VCE = 400 Vdc, VBE = 0)
MJE5730
MJE5731
MJE5731A
ICES
−
−
−
1.0
1.0
1.0
mAdc
IEBO
−
1.0
mAdc
30
10
150
−
−
VCE(sat)
−
1.0
Vdc
VBE(on)
−
1.5
Vdc
Current Gain − Bandwidth Product (IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz)
fT
10
−
MHz
Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
25
−
−
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.3 Adc, VCE = 10 Vdc)
(IC = 1.0 Adc, VCE = 10 Vdc)
hFE
Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc)
Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 10 Vdc)
DYNAMIC CHARACTERISTICS
200
hFE , DC CURRENT GAIN
100
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
1.4
VCE = 10 V
1.2
TJ = 150°C
50
25°C
30
−55 °C
1
TJ = 25°C
0.8
20
0.6
10
−55 °C
0.4
5.0
150°C
0.2
3.0
2.0
0.02 0.03
0.05
0.1
0.2 0.3
0.5
IC, COLLECTOR CURRENT (AMPS)
1.0
2.0
VCE(sat)) @ IC/IB = 5.0
0
0.02 0.03
Figure 1. DC Current Gain
0.05
0.1
0.2 0.3
0.5
IC, COLLECTOR CURRENT (AMPS)
1.0
SECOND BREAKDOWN
DERATING
1.2
0.8
VBE(sat) @ IC/IB = 5.0
TJ = − 55°C
DERATING FACTOR
1.0
0.8
25°C
0.6
150°C
0.4
0.6
THERMAL
DERATING
0.4
0.2
0.2
0
0.02 0.03
0.05
0.1
0.2 0.3
0.5
IC, COLLECTOR CURRENT (AMPS)
2.0
Figure 2. Collector−Emitter Saturation Voltage
1.4
V, VOLTAGE (V)
1.0
1.0
0
2.0
0
Figure 3. Base−Emitter Voltage
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
175
Figure 4. Normalized Power Derating
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2
MJE5730, MJE5731, MJE5731A
IC, COLLECTOR CURRENT (AMP)
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T J(pk) v 150_C. TJ(pk) may be calculated from the data in
Figure 6. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
5.0
2.0
100 ms
1.0ms
1.0
500 ms
dc
TC = 25°C
0.5
0.2
0.1
0.05
0.02
0.01
5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT MJE5730
MJE5731
MJE5732
10
20 30
50
100
200 300
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
500
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Figure 5. Forward Bias Safe Operating Area
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
D = 0.5
0.2
0.1
0.02
0.03
0.01
0.02
SINGLE PULSE
0.01
0.01
0.02
P(pk)
RqJC(t) = r(t) RqJC
RqJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200
500
Figure 6. Thermal Response
TURN−ON PULSE
t1
VBE(off)
Vin
0V
APPROX
.
−11 V
VCC
t2
RC
SCOPE
t1 ≤ 7.0 ns
100 ≤ t2 < 500 ms
t3 < 15 ns
RB
Vin
t3
51
APPROX. +9.0 V
DUTY CYCLE ≈ 2.0%
TURN−OFF PULSE
Figure 7. Switching Time Equivalent Circuit
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3
Cjd << Ceb
+4.0 V
1k
MJE5730, MJE5731, MJE5731A
5.0
1.0
2.0
td
0.2
t, TIME (s)
μ
t, TIME (s)
μ
0.3
TJ = 25°C
VCC = 200 V
IC/IB = 5.0
ts
3.0
TJ = 25°C
VCC = 200 V
IC/IB = 5.0
tr
0.5
0.1
0.05
tf
1.0
0.5
0.3
0.2
0.03
0.1
0.02
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
IC, COLLECTOR CURRENT (AMPS)
1.0
0.05
0.02 0.03
2.0
Figure 8. Turn−On Resistive Switching Times
0.05
Voltage and Current Waveforms
VCE MONITOR
RBB1 =
150 W
INPUT
TUT
−
50
VBB1 = 10 V
+
RBB2 =
100 W
−
VBB2 =
0
INPUT
VOLTAGE
100 mH
+
50
0V
tw ≈ 3 ms
(SEE NOTE 1)
−5 V
100 ms
VCC = 20 V
IC MONITOR
0.63 A
COLLECTOR
CURRENT 0 V
RS =
0.1 W
VCER
COLLECTOR
VOLTAGE
10 V
VCE(sat)
Figure 10. Inductive Load Switching
ORDERING INFORMATION
Device
MJE5730
MJE5730G
MJE5731
Package
Shipping
TO−220
TO−220
(Pb−Free)
TO−220
MJE5731G
TO−220
(Pb−Free)
MJE5731A
TO−220
MJE5731AG
1.0
Figure 9. Resistive Turn−Off Switching Times
Test Circuit
MJE171
0.1
0.2 0.3
0.5
IC, COLLECTOR CURRENT (AMPS)
TO−220
(Pb−Free)
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4
50 Units / Rail
2.0
MJE5730, MJE5731, MJE5731A
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
SEATING
PLANE
−T−
B
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−− 0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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MJE5730/D