ONSEMI BD243B

BD243B, BD243C* (NPN)
BD244B, BD244C* (PNP)
BD243C and BD244C are Preferred Devices
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general purpose amplifier and
switching applications.
Features
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6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
80-100 VOLTS
65 WATTS
•Collector - Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc
•Collector Emitter Sustaining Voltage VCEO(sus) = 80 Vdc (Min) - BD243B, BD244B
= 100 Vdc (Min) - BD243C, BD244C
•High Current Gain Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
•Pb-Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
BD243B, BD244B
BD243C, BD244C
VCEO
Collector-Base Voltage
Value
Unit
1
VCB
BD243B, BD244B
BD243C, BD244C
Emitter-Base Voltage
Vdc
5.0
Vdc
IC
6
10
Adc
Base Current
IB
2.0
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
65
0.52
W
W/°C
TJ, Tstg
-65 to +150
°C
Symbol
Max
Unit
RqJC
1.92
°C/W
- Continuous
- Peak
Operating and Storage Junction
Temperature Range
2
3
80
100
VEB
Collector Current
TO-220AB
CASE 221A-09
STYLE 1
Vdc
80
100
MARKING DIAGRAM
BD24xyG
AY WW
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BD24xy =
A
Y
WW
G
=
=
=
=
Device Code
x = 3 or 4
y = B or C
Assembly Location
Year
Work Week
Pb-Free Package
ORDERING INFORMATION
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 12
1
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
BD243B/D
BD243B, BD243C* (NPN) BD244B, BD244C* (PNP)
PD, POWER DISSIPATION (WATTS)
80
60
40
20
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
160
Figure 1. Power Derating
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Collector-Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Min
Max
80
100
-
-
0.7
-
400
400
-
1.0
30
15
-
VCEO(sus)
BD243B, BD244B
BD243C, BD244C
ICEO
Unit
Vdc
mAdc
BD243B, BD243C, BD244B, BD244C
Collector Cutoff Current
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)
mAdc
ICES
BD243B, BD244B
BD243C, BD244C
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.3 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
-
Collector-Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 1.0 Adc)
VCE(sat)
-
1.5
Vdc
Base-Emitter On Voltage
(IC = 6.0 Adc, VCE = 4.0 Vdc)
VBE(on)
-
2.0
Vdc
Current-Gain - Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
3.0
-
MHz
Small-Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
-
-
DYNAMIC CHARACTERISTICS
1. Pulse Test: Pulsewidth v 300 ms, Duty Cycle v 2.0%.
2. fT = hfe • ftest
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2
BD243B, BD243C* (NPN) BD244B, BD244C* (PNP)
2.0
VCC
- 30 V
TJ = 25°C
VCC = 30 V
IC/IB = 10
1.0
25 ms
0.7
0.5
RC
+ 11 V
t, TIME (s)
μ
SCOPE
RB
0
- 9.0 V
51
tr, tf v 10 ns
DUTY CYCLE = 1.0%
D1
0.3
0.2
tr
0.1
0.07
0.05
-4V
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.03
0.02
0.06
D1 MUST BE FAST RECOVERY TYPE eg.
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
td @ VBE(off) = 5.0 V
0.1
0.2
0.4 0.6
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
Figure 2. Switching Time Test Circuit
1.0
0.7
0.5
D = 0.5
0.3
0.2
4.0
6.0
Figure 3. Turn-On Time
0.2
0.1
P(pk)
0.05
0.1
0.07
0.05
RqJC(max) = 1.92°C/W
0.02
t1
0.03
0.01
0.02
SINGLE
PULSE
t2
SINGLE PULSE
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
DUTY CYCLE, D = t1/t2
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
30
50
100
200 300
500
1000
Figure 4. Thermal Response
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C: TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C, TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.5 ms
IC, COLLECTOR CURRENT (AMP)
5.0
3.0
1.0
ms
2.0
TJ = 150°C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
1.0
0.5
5.0 ms
CURVES APPLY BELOW RATED VCEO
0.3
0.2
0.1
5.0
BD243B, BD244B
BD243C, BD244C
10
20
40
60
80
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 5. Active Region Safe Operating Area
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3
BD243B, BD243C* (NPN) BD244B, BD244C* (PNP)
5.0
300
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
ts
t, TIME (s)
μ
1.0
TJ = 25°C
200
CAPACITANCE (pF)
3.0
2.0
0.7
0.5
0.3
0.2
tf
0.1
0.07
0.05
0.06
100
70
Cob
50
1.0
0.2
0.4 0.6
2.0
IC, COLLECTOR CURRENT (AMP)
0.1
Cib
30
0.5
4.0 6.0
1.0
2.0 3.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Turn‐Off Time
30
20
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
VCE = 2.0 V
TJ = 150°C
100
70
50
25°C
-55°C
10
7.0
5.0
0.06
0.1
0.2 0.3 0.4 0.6
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
4.0
6.0
TJ = 25°C
1.6
IC = 1.0 A
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
TJ = 25°C
V, VOLTAGE (VOLTS)
1.6
0.4
0
0.06
VBE(sat) @ IC/IB = 10
VBE @ VCE = 4.0 V
VCE(sat) @ IC/IB = 10
0.1
0.2
0.3 0.4 0.6
1.0
2.5 A
5.0 A
1.2
0.8
0.4
0
10
20
30
50
100
200 300
IB, BASE CURRENT (mA)
500
1000
Figure 9. Collector Saturation Region
2.0
0.8
50
2.0
Figure 8. DC Current Gain
1.2
30
Figure 7. Capacitance
500
300
200
20
2.0 3.0 4.0
+2.5
+2.0
+1.5
+1.0
+ 25°C to + 150°C
+0.5
0
*qVC FOR VCE(sat)
- 55°C to + 25°C
-0.5
+ 25°C to + 150°C
-1.0
-1.5
qVB FOR VBE
- 55°C to + 25°C
-2.0
-2.5
0.06
6.0
*APPLIES FOR IC/IB ≤ 5.0
0.1
0.2
0.3
0.5
1.0
2.0 3.0 0.4
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
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4
0.6
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHM
BD243B, BD243C* (NPN) BD244B, BD244C* (PNP)
103
IC, COLLECTOR CURRENT (A)
μ
VCE = 30 V
102
TJ = 150°C
101
100°C
25°C
100
10-1
IC = ICES
10-2
REVERSE
10-3
-0.3 -0.2 -0.1
FORWARD
0
+0.1 +0.2 +0.3
+0.4 +0.5 +0.6 +0.7
10M
VCE = 30 V
1.0M
IC = 10 x ICES
IC = 2 x ICES
100k
IC ≈ ICES
10k
1.0k
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
0.1k
20
40
60
80
100
120
140
160
VBE, BASE‐EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut‐Off Region
Figure 13. Effects of Base-Emitter Resistance
ORDERING INFORMATION
Device
BD243B
BD243BG
BD243C
BD243CG
BD244B
BD244BG
BD244C
BD244CG
Package
Shipping†
TO-220
TO-220
(Pb-Free)
50 Units / Rail
TO-220
TO-220
(Pb-Free)
50 Units / Rail
TO-220
TO-220
(Pb-Free)
50 Units / Rail
TO-220
TO-220
(Pb-Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
BD243B, BD243C* (NPN) BD244B, BD244C* (PNP)
PACKAGE DIMENSIONS
TO-220
CASE 221A-09
ISSUE AE
-TB
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BD243B/D