NSI45030AZT1G Constant Current Regulator & LED Driver 45 V, 30 mA + 10%, 1.4 W Package The linear constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost−effective solution for regulating current in LEDs. The CCR is based on patent-pending Self-Biased Transistor (SBT) technology and regulates current over a wide voltage range. It is designed with a negative temperature coefficient to protect LEDs from thermal runaway at extreme voltages and currents. The CCR turns on immediately and is at 25% of regulation with only 0.5 V Vak. It requires no external components allowing it to be designed as a high or low−side regulator. The high anode-cathode voltage rating withstands surges common in Automotive, Industrial and Commercial Signage applications. The CCR comes in thermally robust packages and is qualified to AEC-Q101 standard. http://onsemi.com Ireg(SS) = 30 mA @ Vak = 7.5 V Anode 1 Features • • • • • • • • Cathode 2/4 Robust Power Package: 1.4 Watts Wide Operating Voltage Range Immediate Turn-On Voltage Surge Suppressing − Protecting LEDs AEC-Q101 Qualified SBT (Self−Biased Transistor) Technology Negative Temperature Coefficient These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−223 CASE 318E STYLE 2 MARKING DIAGRAM C Applications • Automobile: Chevron Side Mirror Markers, Cluster, Display & • • • • Instrument Backlighting, CHMSL, Map Light AC Lighting Panels, Display Signage, Decorative Lighting, Channel Lettering Switch Contact Wetting Application Note AND8391/D − Power Dissipation Considerations Application Note AND8349/D − Automotive CHMSL MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Anode−Cathode Voltage Reverse Voltage Operating and Storage Junction Temperature Range ESD Rating: Human Body Model Machine Model Symbol Value Unit Vak Max 45 V VR 500 mV TJ, Tstg −55 to +150 °C ESD Class 1C Class B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2009 September, 2009 − Rev. 1 1 AYW AAHG G 1 A C NC A = Assembly Location Y = Year W = Work Week AAH = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package NSI45030AZT1G SOT−223 (Pb−Free) Shipping† 1000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSI45030AZ/D NSI45030AZT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Steady State Current @ Vak = 7.5 V (Note 1) Voltage Overhead (Note 2) 1. 2. 3. 4. Symbol Min Typ Max Unit Ireg(SS) 27 30 33 mA Voverhead Pulse Current @ Vak = 7.5 V (Note 3) Ireg(P) Capacitance @ Vak = 7.5 V (Note 4) C Capacitance @ Vak = 0 V (Note 4) C 1.8 28.4 Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 10 sec, using FR−4 @ 300 Voverhead = Vin − VLEDs. Voverhead is typical value for 70% Ireg(SS). Ireg(P) non−repetitive pulse test. Pulse width t ≤ 300 msec. f = 1 MHz, 0.02 V RMS. mm2 31.55 V 34.7 mA 2.6 pF 6.9 pF 2 oz. Copper traces, in still air. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation (Note 5) TA = 25°C Derate above 25°C PD 954 7.6 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 5) RθJA 131 °C/W RψJL4 40.8 °C/W Total Device Dissipation (Note 6) TA = 25°C Derate above 25°C PD 1074 8.6 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 6) RθJA 116 °C/W Thermal Reference, Junction−to−Lead 4 (Note 6) RψJL4 39.9 °C/W Total Device Dissipation (Note 7) TA = 25°C Derate above 25°C PD 1150 9.2 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 7) RθJA 109 °C/W Thermal Reference, Junction−to−Lead 4 (Note 7) RψJL4 42 °C/W Total Device Dissipation (Note 8) TA = 25°C Derate above 25°C PD 1300 10.4 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 8) RθJA 96 °C/W RψJL4 39.4 °C/W Total Device Dissipation (Note 9) TA = 25°C Derate above 25°C PD 1214 9.7 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 9) RθJA 103 °C/W Thermal Reference, Junction−to−Lead 4 (Note 9) RψJL4 40.2 °C/W Total Device Dissipation (Note 10) TA = 25°C Derate above 25°C PD 1389 11.1 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 10) RθJA 90 °C/W Thermal Reference, Junction−to−Lead 4 (Note 10) RψJL4 37.7 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Thermal Reference, Junction−to−Lead 4 (Note 5) Thermal Reference, Junction−to−Lead 4 (Note 8) 5. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 6. FR−4 @ 100 mm2, 2 oz. copper traces, still air. 7. FR−4 @ 300 mm2, 1 oz. copper traces, still air. 8. FR−4 @ 300 mm2, 2 oz. copper traces, still air. 9. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 10. FR−4 @ 500 mm2, 2 oz. copper traces, still air. NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9. Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical measurements and method of attachment. http://onsemi.com 2 NSI45030AZT1G TYPICAL PERFORMANCE CURVES Minimum FR−4 @ 300 mm2, 2 oz Copper Trace, Still Air Ireg(SS), STEADY STATE CURRENT (mA) Ireg, CURRENT REGULATION (mA) 60 50 40 30 20 10 0 VR −10 −20 −10 0 10 20 30 40 50 60 35 TA = −40°C 30 TA = 25°C 25 TA = 85°C [ −0.088 mA/°C typ @ Vak = 7.5 V [ −0.072 mA/°C typ @ Vak = 7.5 V TA = 125°C [ −0.061 mA/°C typ @ Vak = 7.5 V 20 15 10 5 0 DC Test Steady State, Still Air 0 1 6 7 8 9 Figure 2. Steady State Current (Ireg(SS)) vs. Anode−Cathode Voltage (Vak) Ireg(SS), STEADY STATE CURRENT (mA) TA = 25°C 30 29 28 27 26 3.0 Non−Repetitive Pulse Test 4.0 5.0 6.0 7.0 8.0 9.0 10 Vak @ 7.5 V TA = 25°C 32 31 30 29 28 27 28 29 30 Figure 3. Pulse Current (Ireg(P)) vs. Anode−Cathode Voltage (Vak) Vak @ 7.5 V TA = 25°C POWER DISSIPATION (mW) 30 15 20 25 33 35 34 30 500 mm2/2 oz 2000 31 10 32 Figure 4. Steady State Current vs. Pulse Current Testing 2200 5 31 Ireg(P), PULSE CURRENT (mA) 32 300 mm2/2 oz 1800 1600 100 mm2/2 oz 1400 1200 1000 500 mm2/1 oz 800 300 mm2/1 oz 600 400 −40 35 100 mm2/1 oz −20 0 20 40 60 TA, AMBIENT TEMPERATURE (°C) TIME (s) Figure 6. Power Dissipation vs. Ambient Temperature @ TJ = 1505C Figure 5. Current Regulation vs. Time http://onsemi.com 3 10 33 Vak, ANODE−CATHODE VOLTAGE (V) Ireg, CURRENT REGULATION (mA) 5 Figure 1. General Performance Curve for CCR 31 0 4 Vak, ANODE−CATHODE VOLTAGE (V) 32 29 3 2 Vak, ANODE−CATHODE VOLTAGE (V) 33 Ireg(P), PULSE CURRENT (mA) 40 80 NSI45030AZT1G APPLICATIONS D1 Anode D1 Q1 Q2 Qx LED LED LED Anode Cathode + − Vin Q1 Q2 Qx Cathode HF3−R5570 HF3−R5570 + − HF3−R5570 Vin LED HF3−R5570 LED HF3−R5570 LED HF3−R5570 LED HF3−R5570 LED HF3−R5570 LED LED HF3−R5570 HF3−R5570 LED LED HF3−R5570 HF3−R5570 Figure 7. Typical Application Circuit (30 mA each LED String) Figure 8. Typical Application Circuit (90 mA each LED String) Number of LED’s that can be connected is determined by: D1 is a reverse battery protection diode LED’s = ((Vin − QX VF + D1 VF)/LED VF) Example: Vin = 12 Vdc, QX VF = 3.5 Vdc, D1VF = 0.7 V LED VF = 2.2 Vdc @ 30 mA (12 Vdc − 4.2 Vdc)/2.2 Vdc = 3 LEDs in series. Number of LED’s that can be connected is determined by: D1 is a reverse battery protection diode Example: Vin = 12 Vdc, QX VF = 3.5 Vdc, D1VF = 0.7 V LED VF = 2.6 Vdc @ 90 mA (12 Vdc − (3.5 + 0.7 Vdc))/2.6 Vdc = 3 LEDs in series. Number of Drivers = LED current/30 mA 90 mA/30 mA = 3 Drivers (Q1, Q2, Q3) http://onsemi.com 4 NSI45030AZT1G Comparison of LED Circuit using CCR vs. Resistor Biasing ON Semiconductor CCR Design Resistor Biased Design Constant brightness over full Automotive Supply Voltage (more efficient), see Figure 9 Large variations in brightness over full Automotive Supply Voltage Little variation of power in LEDs, see Figure 10 Large variations of current (power) in LEDs Constant current extends LED strings lifetime, see Figure 9 High Supply Voltage/ Higher Current in LED strings limits lifetime Current decreases as voltage increases, see Figure 9 Current increases as voltage increases Current supplied to LED string decreases as temperature increases (self-limiting), see Figure 2 LED current decreases as temperature increases No resistors needed Requires costly inventory (need for several resistor values to match LED intensity) Fewer components, less board space required More components, more board space required Surface mount component Through-hole components 40 35 200 Pd LEDs (mW) 25 Circuit Current with 250 W 20 Representative Test Data for Figure 7 Circuit, Current of LEDs, FR−4 @ 300 mm2, 2 oz Copper Area 15 10 9 10 TA = 25°C 220 Circuit Current with CCR Device 30 I (mA) 240 TA = 25°C 11 12 13 14 15 LED Power with CCR Device 180 160 140 LED Power with 250 W 120 100 Representative Test Data for Figure 7 Circuit, Pd of LEDs, FR−4 @ 300 mm2, 2 oz Copper Area 80 60 16 9 10 11 12 13 14 Vin (V) Vin (V) Figure 9. Series Circuit Current Figure 10. LED Power Current Regulation: Pulse Mode (Ireg(P)) vs DC Steady-State (Ireg(SS)) 15 16 Ireg(SS) for stated board material, size, copper area and copper thickness. Ireg(P) will always be greater than Ireg(SS) due to the die temperature rising during Ireg(SS). This heating effect can be minimized during circuit design with the correct selection of board material, metal trace size and weight, for the operating current, voltage, board operating temperature (TA) and package. (Refer to Thermal Characteristics table). There are two methods to measure current regulation: Pulse mode (Ireg(P)) testing is applicable for factory and incoming inspection of a CCR where test times are a minimum. (t < 300 ms). DC Steady-State (Ireg(SS)) testing is applicable for application verification where the CCR will be operational for seconds, minutes, or even hours. ON Semiconductor has correlated the difference in Ireg(P) to http://onsemi.com 5 NSI45030AZT1G PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE M D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 HE E 1 2 3 b e1 e 0.08 (0003) C q A A1 DIM A A1 b b1 c D E e e1 L1 HE q STYLE 2: PIN 1. 2. 3. 4. L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10° ANODE CATHODE NC CATHODE SOLDERING FOOTPRINT 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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