ONSEMI NSI50150ADT4G

NSI50150ADT4G
Adjustable Constant Current
Regulator & LED Driver
50 V, 150 − 350 mA + 10%, 4.2 W Package
The adjustable constant current regulator (CCR) is a simple,
economical and robust device designed to provide a cost effective
solution for regulating current in LEDs. The CCR is based on
Self-Biased Transistor (SBT) technology and regulates current over a
wide voltage range. It is designed with a negative temperature
coefficient to protect LEDs from thermal runaway at extreme voltages
and currents.
The CCR turns on immediately and is at 14% of regulation with
only 0.5 V Vak. The Radj pin allows Ireg(SS) to be adjusted to higher
currents by attaching a resistor between Radj (Pin 3) and the Cathode
(Pin 4). The Radj pin can also be left open (No Connect) if no
adjustment is required. It requires no external components allowing it
to be designed as a high or low−side regulator. The high anodecathode voltage rating withstands surges common in Automotive,
Industrial and Commercial Signage applications. This device is
available in a thermally robust package and is qualified to stringent
AEC−Q101 standard, which is lead-free RoHS compliant and uses
halogen-free molding compound.
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Ireg(SS) = 150 − 350 mA
@ Vak = 7.5 V
Anode
1
3
Radj
4
Cathode
4
1 2
Features
•
•
•
•
•
•
•
•
•
•
Robust Power Package: 4.2 Watts
Adjustable up to 350 mA
Wide Operating Voltage Range
Immediate Turn-On
Voltage Surge Suppressing − Protecting LEDs
SBT (Self−Biased Transistor) Technology
Negative Temperature Coefficient
Eliminates Additional Regulation
For Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable, UL94−V0 Certified
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
• Automobile: Chevron Side Mirror Markers, Cluster, Display &
•
•
Instrument Backlighting, CHMSL, Map Light
AC Lighting Panels, Display Signage, Decorative Lighting, Channel
Lettering
Application Notes AND8391/D, AND9008/D − Power Dissipation
Considerations
Application Note AND8349/D − Automotive CHMSL
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 0
MARKING DIAGRAM
A
Radj
Y
WW
NSI150
G
1
YWW
NSI
150G
C
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
ORDERING INFORMATION
Applications
•
3
DPAK
CASE 369C
1
Device
Package
Shipping†
NSI50150ADT4G
DPAK
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NSI50150AD/D
NSI50150ADT4G
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Anode−Cathode Voltage
Reverse Voltage
Operating and Storage Junction Temperature Range
ESD Rating:
Human Body Model
Machine Model
Symbol
Value
Vak Max
50
V
VR
500
mV
TJ, Tstg
−55 to +175
ESD
Unit
°C
Class 3B (8000 V)
Class C (400 V)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Steady State Current @ Vak = 7.5 V (Note 1)
Voltage Overhead (Note 2)
Symbol
Min
Typ
Max
Unit
Ireg(SS)
135
150
165
mA
140.5
158
175.35
mA
Voverhead
Pulse Current @ Vak = 7.5 V (Note 3)
Ireg(P)
1.8
V
1. Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 170 sec, using FR−4 @ 1000 mm2 2 oz. Copper traces, in still air.
2. Voverhead = Vin − VLEDs. Voverhead is typical value for 48% Ireg(SS).
3. Ireg(P) non−repetitive pulse test. Pulse width t ≤ 1 msec.
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2
NSI50150ADT4G
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 4) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 4)
Thermal Resistance, Junction−to−Tab (Note 4)
Total Device Dissipation (Note 5) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 5)
Thermal Resistance, Junction−to−Tab (Note 5)
Total Device Dissipation (Note 6) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 6)
Thermal Resistance, Junction−to−Tab (Note 6)
Total Device Dissipation (Note 7) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 7)
Thermal Resistance, Junction−to−Tab (Note 7)
Total Device Dissipation (Note 8) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 8)
Thermal Resistance, Junction−to−Tab (Note 8)
Total Device Dissipation (Note 9) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 9)
Thermal Resistance, Junction−to−Tab (Note 9)
Total Device Dissipation (Note 10) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 10)
Thermal Resistance, Junction−to−Tab (Note 10)
Total Device Dissipation (Note 11) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 11)
Symbol
Max
Unit
PD
2125
14.16
mW
mW/°C
RθJA
70.6
°C/W
RψJ−TAB
6.8
°C/W
PD
2500
16.67
mW
mW/°C
RθJA
60
°C/W
RψJ−TAB
6.3
°C/W
PD
2496
16.64
mW
mW/°C
RθJA
60.1
°C/W
RψJ−TAB
6.5
°C/W
PD
2930
19.53
mW
mW/°C
RθJA
51.2
°C/W
RψJ−TAB
5.9
°C/W
PD
2771
18.47
mW
mW/°C
RθJA
54.1
°C/W
RψJ−TAB
6.2
°C/W
PD
3256
21.71
mW
mW/°C
RθJA
46.1
°C/W
RψJ−TAB
5.7
°C/W
PD
4202
28.01
mW
mW/°C
RθJA
35.7
°C/W
RψJ−TAB
5.4
°C/W
PD
4144
27.62
mW
mW/°C
RθJA
36.2
°C/W
Thermal Resistance, Junction−to−Tab (Note 11)
RψJ−TAB
1.0
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
4. FR−4 @ 300 mm2, 1 oz. copper traces, still air.
5. FR−4 @ 300 mm2, 2 oz. copper traces, still air.
6. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
7. FR−4 @ 500 mm2, 2 oz. copper traces, still air.
8. FR−4 @ 700 mm2, 1 oz. copper traces, still air.
9. FR−4 @ 700 mm2, 2 oz. copper traces, still air.
10. FR−4 @ 1000 mm2, 3 oz. copper traces, still air.
11. 400 mm2, DENKA K1, 1.5 mm AL, 2 kV thermally
conductive dielectric, 2 oz. Cu, or equivalent.
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NSI50150ADT4G
TYPICAL PERFORMANCE CURVES
(Minimum FR−4 @ 1000 mm2, 3 oz. Copper Trace, Still Air)
Ireg(SS), STEADY STATE CURRENT (mA)
Ireg, CURRENT REGULATION (mA)
200
175
150
125
100
75
50
25
0
TA = 25°C, Radj = Open
−25
−10
0
10
20
30
50
40
60
TA = 85°C
120
100
≈−0.174 mA/°C typ
80
TA = 125°C
60
TJ, maximum die temperature limit 175°C
40
20
0
DC Test Steady State, Still Air, Radj = Open
0
120
100
TA = 25°C
Radj = Open
80
60
Non−Repetitive Pulse Test
3
4
5
6
7
8
9 10 11 12 13 14 15
3
2
4
5
6
7
8
9
10 11 12 13 14 15
Vak @ 7.5 V
165 TA = 25°C
Radj = Open
160
155
150
145
140
135
130
140
Ireg(SS), STEADY STATE CURRENT (mA)
Vak @ 7.5 V
TA = 25°C
Radj = Open
154
153
152
151
150
149
20
40
60
80
150
155
160
165
170
175
180
Figure 4. Steady State Current vs. Pulse
Current Testing
156
155
145
Ireg(P), PULSE CURRENT (mA)
Figure 3. Pulse Current (Ireg(P)) vs.
Anode−Cathode Voltage (Vak)
Ireg, CURRENT REGULATION (mA)
2
170
Vak, ANODE−CATHODE VOLTAGE (V)
0
1
Figure 2. Steady State Current (Ireg(SS)) vs.
Anode−Cathode Voltage (Vak)
140
148
≈−0.118 mA/°C typ
≈−0.153 mA/°C typ
Figure 1. General Performance Curve for CCR
Ireg(SS), STEADY STATE CURRENT (mA)
Ireg(P), PULSE CURRENT (mA)
TA = 25°C
140
Vak, ANODE−CATHODE VOLTAGE (V)
160
1
TA = −40°C
160
Vak, ANODE−CATHODE VOLTAGE (V)
180
40
180
100 120 140 160 180 200
350
Vak @ 7.5 V
TA = 25°C
300
250
200
150
1
TIME (s)
10
100
Radj (W), Max Power 1 W
Figure 6. Ireg(SS) vs. Radj
Figure 5. Current Regulation vs. Time
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4
1000
NSI50150ADT4G
6000
5700
400 mm2 MCPCB
PD, POWER DISSIPATION (mW)
5400
5100
700 mm2 2 oz
1000 mm2 3 oz Cu
4800
4500
700 mm2 1 oz Cu
4200
3900
500 mm2 2 oz Cu
3600
500 mm2
1 oz Cu
3300
300 mm2
2 oz Cu
3000
2700
2400
2100
1800
1500
1200
−40
300 mm2 1 oz Cu
−20
0
20
40
TA, AMBIENT TEMPERATURE (°C)
Figure 7. DPAK Thermal Power Dissipation vs.
Ambient Temperature @ TJ = 1755C
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5
60
80
NSI50150ADT4G
APPLICATIONS INFORMATION
The CCR is a self biased transistor designed to regulate the
current through itself and any devices in series with it. The
device has a slight negative temperature coefficient, as
shown in Figure 2 – Tri Temp. (i.e. if the temperature
increases the current will decrease). This negative
temperature coefficient will protect the LEDS by reducing
the current as temperature rises.
The CCR turns on immediately and is typically at 20% of
regulation with only 0.5 V across it.
The device is capable of handling voltage for short
durations of up to 50 V so long as the die temperature does
not exceed 175°C. The determination will depend on the
thermal pad it is mounted on, the ambient temperature, the
pulse duration, pulse shape and repetition.
Single LED String
The CCR can be placed in series with LEDs as a High Side
or a Low Side Driver. The number of the LEDs can vary
from one to an unlimited number. The designer needs to
calculate the maximum voltage across the CCR by taking the
maximum input voltage less the voltage across the LED
string (Figures 8 and 9).
Figure 9.
Higher Current LED Strings
Two or more fixed current CCRs can be connected in
parallel. The current through them is additive (Figure 10).
Figure 8.
Figure 10.
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NSI50150ADT4G
Other Currents
generate audible sound. Dimming is achieved by turning the
LEDs on and off for a portion of a single cycle. This on/off
cycle is called the Duty cycle (D) and is expressed by the
amount of time the LEDs are on (Ton) divided by the total
time of an on/off cycle (Ts) (Figure 13).
The adjustable CCR can be placed in parallel with any
other CCR to obtain a desired current. The adjustable CCR
provides the ability to adjust the current as LED efficiency
increases to obtain the same light output (Figure 11).
Figure 13.
The current through the LEDs is constant during the period
they are turned on resulting in the light being consistent with
no shift in chromaticity (color). The brightness is in proportion
to the percentage of time that the LEDs are turned on.
Figure 14 is a typical response of Luminance vs Duty Cycle.
6000
5000
ILLUMINANCE (lx)
Figure 11.
4000
Dimming using PWM
3000
The dimming of an LED string can be easily achieved by
placing a BJT in series with the CCR (Figure 12).
2000
Lux
Linear
1000
0
0
10
20
30
40 50
60 70
DUTY CYCLE (%)
80
90 100
Figure 14. Luminous Emmitance vs. Duty Cycle
Reducing EMI
Designers creating circuits switching medium to high
currents need to be concerned about Electromagnetic
Interference (EMI). The LEDs and the CCR switch
extremely fast, less than 100 nanoseconds. To help eliminate
EMI, a capacitor can be added to the circuit across R2.
(Figure 12) This will cause the slope on the rising and falling
edge on the current through the circuit to be extended. The
slope of the CCR on/off current can be controlled by the
values of R1 and C1.
The selected delay / slope will impact the frequency that
is selected to operate the dimming circuit. The longer the
delay, the lower the frequency will be. The delay time should
not be less than a 10:1 ratio of the minimum on time. The
frequency is also impacted by the resolution and dimming
steps that are required. With a delay of 1.5 microseconds on
the rise and the fall edges, the minimum on time would be
30 microseconds. If the design called for a resolution of 100
dimming steps, then a total duty cycle time (Ts) of 3
milliseconds or a frequency of 333 Hz will be required.
Figure 12.
The method of pulsing the current through the LEDs is
known as Pulse Width Modulation (PWM) and has become
the preferred method of changing the light level. LEDs being
a silicon device, turn on and off rapidly in response to the
current through them being turned on and off. The switching
time is in the order of 100 nanoseconds, this equates to a
maximum frequency of 10 Mhz, and applications will
typically operate from a 100 Hz to 100 kHz. Below 100 Hz
the human eye will detect a flicker from the light emitted
from the LEDs. Between 500 Hz and 20 kHz the circuit may
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NSI50150ADT4G
Thermal Considerations
P D(MAX) +
As power in the CCR increases, it might become
necessary to provide some thermal relief. The maximum
power dissipation supported by the device is dependent
upon board design and layout. Mounting pad configuration
on the PCB, the board material, and the ambient temperature
affect the rate of junction temperature rise for the part. When
the device has good thermal conductivity through the PCB,
the junction temperature will be relatively low with high
power applications. The maximum dissipation the device
can handle is given by:
T J(MAX) * T A
R qJA
Referring to the thermal table on page 2 the appropriate
RqJA for the circuit board can be selected.
AC Applications
The CCR is a DC device; however, it can be used with full
wave rectified AC as shown in application notes
AND8433/D and AND8492/D and design notes
DN05013/D and DN06065/D. Figure 15 shows the basic
circuit configuration.
Figure 15. Basic AC Application
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NSI50150ADT4G
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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NSI50150AD/D