Transys Electronics L I M I T E D SOT-523 Plastic-Encapsulated Diode DAN222 SOT-523 SWITCHING DIODE FEATURES: Power dissipation PD: 150 mW (Tamb=25℃) Collector current 100 mA IF: Collector-base voltage 80 V VR: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ CIRCUIT: 1 3 2 MARKING: N ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless Test otherwise conditions specified) MIN MAX UNIT V(BR) IR= 100µA Reverse voltage leakage current IR VR=70V 0.1 µA Forward voltage VF IF=100mA 1.2 V Diode capacitance CD VR=6V, f=1MHz 3.5 pF Reverse recovery time trr VR=6V, IF=5mA 4 ns Reverse breakdown voltage 80 V