RoHS BAW56W SOT-323 Plastic-Encapsulate DIODE D T ,. L SOT-323 SWITCHING DIODE FEATURES Power dissipation PD: 200 mW (Tamb=25℃) TJ, Tstg: -55℃ to +150℃ R T C E L Parameter E Symbol C 1. 30¡ À0. 03 Collector current IO: 150 mA Collector-base voltage VR: 75 V Operating and storage junction temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃ O 2. 30¡ À0. 05 O IC 2. 00¡ À0. 05 1. 01 REF 1. 25¡ À0. 05 0. 30 BAW56W Unit: mm N Marking: KJC unless otherwise specified) Test conditions MIN MAX V(BR) R IR= 100µA IR VR=75V 2.5 µA VF IF=1mA IF=10mA IF=50mA IF=150mA 715 855 1000 1250 mV Diode capacitance CD VR=0V, f=1MHz 2 pF Reveres recovery time trr 4 nS Reverse breakdown voltage J E Reverse voltage Forward voltage leakage current W WEJ ELECTRONIC CO. IF=IR=10mA Irr=0.1×IR Http:// www.wej.cn 75 UNIT V E-mail:[email protected]