DIODES LL4148

LL4148 / LL4448
FAST SWITCHING SURFACE MOUNT DIODE
Features
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Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
General Purpose Rectification
Silicon Epitaxial Planar Construction
C
B
A
Mechanical Data
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MiniMELF
Case: MiniMELF
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Cathode Band Only
Weight: 0.05 grams (approx.)
Dim
Min
Max
A
3.30
3.70
B
1.30
1.60
C
0.28
0.50
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
LL4148
Unit
100
V
VRRM
VRWM
VR
75
V
VR(RMS)
RMS Reverse Voltage
LL4448
VRM
Non-Repetitive Peak Reverse Voltage
53
V
Forward Continuous Current (Note 1)
IFM
Average Rectified Output Current (Note 1)
IO
150
mA
IFSM
1.0
2.0
A
Pd
500
1.68
mW
mW/°C
RqJA
300
K/W
Tj , TSTG
-65 to +175
°C
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
@ t = 1.0ms
Power Dissipation (Note 1)
Derate Above 25°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
500
mA
@ TA = 25°C unless otherwise specified
Characteristic
Maximum Forward Voltage
300
LL4148
LL4448
LL4448
Symbol
Min
Max
VFM
¾
0.62
¾
1.0
0.72
1.0
Unit
V
IF = 10mA
IF = 5.0mA
IF = 100mA
Test Condition
mA
mA
mA
nA
VR = 75V
VR = 70V, Tj = 150°C
VR = 20V, Tj = 150°C
VR = 20V
Maximum Peak Reverse Current
IRM
¾
5.0
50
30
25
Capacitance
Cj
¾
4.0
pF
VR = 0, f = 1.0MHz
Reverse Recovery Time
trr
¾
4.0
ns
IF = 10mA to IR =1.0mA
VR = 6.0V, RL = 100W
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
DS12013 Rev. F-2
1 of 2
LL4148 / LL4448
10,000
100
IR, LEAKAGE CURRENT (nA)
IF, INSTANTANEOUS FORWARD CURRENT (mA)
1000
10
1.0
0.1
1000
100
10
VR = 20V
1
0.01
0
1
2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
DS12013 Rev. F-2
2 of 2
0
100
200
Tj, JUNCTION TEMPERATURE (°C)
Fig. 2, Leakage Current vs Junction Temperature
LL4148 / LL4448