BAV70DXV6T1, BAV70DXV6T5 Preferred Device Monolithic Dual Switching Diode Common Cathode Features http://onsemi.com • These are Pb−Free Devices MAXIMUM RATINGS (EACH DIODE) Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Rating Peak Forward Surge Current Total Device Dissipation, TA = 25°C Characteristic (Both Junctions Heated) Total Device Dissipation, TA = 25°C Symbol Max Unit PD 357 (Note 1) 2.9 (Note 1) mW Junction and Storage Temperature Range mW/°C RJA 350 (Note 1) °C/W Symbol Max Unit PD 500 (Note 1) 4.0 (Note 1) mW Derate above 25°C Thermal Resistance, Junction-to-Ambient 3 CATHODE 4 ANODE BAV70DXV6T1 Derate above 25°C Thermal Resistance, Junction-to-Ambient 2 ANODE 5 ANODE THERMAL CHARACTERISTICS Characteristic (One Junction Heated) ANODE 1 6 CATHODE mW/°C RJA 250 (Note 1) °C/W TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 1 SOT−563 CASE 463A PLASTIC MARKING DIAGRAM 1 A4 M G G A4 = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping † BAV70DXV6T1 SOT−563* 4000/Tape & Reel BAV70DXV6T1G SOT−563* 4000/Tape & Reel BAV70DXV6T5 SOT−563* 8000/Tape & Reel BAV70DXV6T5G SOT−563* 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *These packages are inherently Pb−Free. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 2 1 Publication Order Number: BAV70DXV6T1/D BAV70DXV6T1, BAV70DXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit V(BR) 70 − Vdc − − − 60 2.5 100 − 1.5 − − − − 715 855 1000 1250 − 6.0 OFF CHARACTERISTICS Reverse Breakdown Voltage (Note 2) (I(BR) = 100 Adc) Reverse Voltage Leakage Current (Note 2) (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150°C) IR Diode Capacitance (Note 2) (VR = 0, f = 1.0 MHz) CD Forward Voltage (Note 2) (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF Reverse Recovery Time (Note 2) (IF = IR = 10 mAdc, VR = 5.0 Vdc, IR(REC) = 1.0 mAdc) (Figure 1) trr RL = 100 Adc pF mVdc ns 2. For each individual diode while second diode is unbiased. 820 +10 V 2.0 k 100 H tr 0.1 F IF tp t IF trr 10% t 0.1 F 90% D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR IR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 BAV70DXV6T1, BAV70DXV6T5 Curves Applicable to Each Anode 10 IR , REVERSE CURRENT (μA) TA = 85°C 10 TA = −40°C 1.0 0.1 TA = 25°C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 0 10 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 1.0 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.9 0.8 0.7 0.6 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 3 8 50 BAV70DXV6T1, BAV70DXV6T5 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F D −X− 6 5 1 e 2 A 4 L E −Y− 3 b NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b C D E e L HE HE C 5 PL 6 0.08 (0.003) M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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